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Renesas R1LV3216RSD-5SR#B0
- Part No.:
- R1LV3216RSD-5SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1LV3216RSD-5SR#B0.pdf
- Description:
- STANDARD SRAM, 2MX16, 55NS
- Quantity:
- Payment:
- Shipping:
Inventory:672
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Product details
Overview
R1LV3216RSD-5SR#B0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process. It operates from a single 2.7–3.6V supply, delivers 55 ns access time, and draws only 4 µA standby current at 3.0V - enabling battery-backed memory retention in portable instrumentation and industrial control modules.
For engineers reviewing the R1LV3216RSD-5SR#B0 datasheet, R1LV3216RSD-5SR#B0 pinout, R1LV3216RSD-5SR#B0 application, or R1LV3216RSD-5SR#B0 equivalent, this device serves as a drop-in replacement for legacy LPSRAMs requiring TTL-compatible interfacing, no refresh circuitry, and dual-byte/word mode flexibility in space-constrained PCB layouts.
Technical Context
The R1LV3216RSD-5SR#B0 implements a fully asynchronous SRAM architecture with independent upper/lower byte enables (UB#/LB#), chip select hierarchy (CS1#/CS2), and BYTE#-controlled mode switching between word and byte addressing. Its internal block diagram integrates column/row decoders, sense/write amplifiers, and data selectors without clocks or refresh logic.
All I/Os are TTL-compatible with VIH = 2.4V min and VIL = 0.4V max; output drive meets VOH ≥ 2.4V at –0.5mA and VOL ≤ 0.4V at 2mA. Standby current drops to 4 µA typical at 3.0V, and data retention is guaranteed down to 2.0V VCC with ICCDR ≤ 80 µA at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 × 16 or 4,194,304 × 8) |
| Access Time | 55 ns - determines minimum read cycle duration in high-speed microcontroller interfaces |
| Supply Voltage | 2.7–3.6 V - compatible with 3.3V systems and battery-backed operation |
| Standby Current | 4 µA typical at 3.0V - enables multi-year backup from coin-cell batteries |
| Operating Temperature | 0°C to +70°C - commercial-grade rating per R-suffix designation |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - supports fine-pitch routing and compact mounting |
| Data Retention VCC | 2.0 V min - maintains stored data during brown-out or sleep-mode power reduction |
Pinout & Package
52-pin µTSOP (II) package: 10.79 mm × 10.49 mm body, 0.4 mm pin pitch, normal-bend leads. Pin 1 marked by beveled corner; pins arranged in two rows (26 per side).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus supporting 2M-word addressing; A–1 used in byte mode |
| DQ0–DQ15 | Data I/O bidirectional | 16-bit common data bus; three-state outputs enable OR-tie bus sharing |
| CS1#, CS2 | Chip select inputs | Two-level decode: CS1# active-low + CS2 high enables memory; CS2 low forces standby |
| WE#, OE#, LB#, UB# | Control inputs | Asynchronous write enable, output enable, and byte-select controls - no timing interlocks required |
| BYTE# | Mode configuration | Low = byte mode (A–1 active); high = word mode - sets internal address decoding path |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; separate Vss pins improve noise immunity on dense boards |
| NC | No connect | Pins 3, 13, 25, 37, 45 - must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates external timing circuitry and firmware overhead - ideal for simple MCU co-processor memory expansion |
| TTL-compatible I/O | Direct interface with 3.3V microcontrollers and FPGAs without level-shifting components |
| Byte/word mode selection | Hardware-configurable via BYTE# pin - supports both 8-bit and 16-bit bus architectures in same design |
| OR-tie capable outputs | Three-state DQ lines allow multiple devices to share a common data bus without external bus transceivers |
| Ultra-low standby current | 4 µA typical at 3.0V enables >5-year battery life in always-on monitoring systems |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Battery-powered ECG front-end module logging waveform data during transport. IC Role / Device Role / Timing Role: Non-volatile buffer storing raw analog samples prior to wireless upload; retains data during power interruption. Use Value: 4 µA standby current extends CR2032 battery life beyond 3 years; 55 ns access enables real-time sampling at 10 kSPS. |
Use Scenario: Local I/O expansion unit in modular automation rack with intermittent power cycling. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for ladder logic execution and register mirroring between controller and fieldbus nodes. Use Value: TTL compatibility ensures plug-and-play integration with legacy 3.3V PLC CPUs; no refresh simplifies firmware design. |
| Automotive Infotainment Head Units | Test & Measurement Equipment |
Use Scenario: Audio buffer in car radio head unit retaining station presets and equalizer settings during ignition-off. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving user configuration across vehicle power cycles. Use Value: Data retention down to 2.0V VCC prevents loss during cold-cranking voltage sag; 0–70°C rating matches cabin environment. |
Use Scenario: Oscilloscope acquisition memory buffering high-speed ADC samples before FFT processing. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory staging raw digitized waveforms for real-time analysis. Use Value: 55 ns access time supports 18 MS/s sustained capture; µTSOP package fits within tight board area constraints of handheld scopes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns slower access (65 ns), 44-pin TSOP-I, 3.3V only, 12 µA standby | Lower speed margin; larger footprint; higher leakage limits battery life in long-term backup | Select if cost-sensitive and 65 ns timing suffices; verify PCB pad compatibility |
| AS6C4008-55PCN | Same 55 ns speed, 48-pin TSOP-I, 2.7–3.6V, but 15 µA standby and no BYTE# mode control | Lacks byte/word mode flexibility; higher standby current reduces battery runtime | Choose only when µTSOP footprint is not required and byte-mode operation is unnecessary |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV3216RSD-5SR#B0 offers superior standby efficiency (4 µA vs. ≥12 µA), native µTSOP packaging for density-critical designs, and hardware-selectable byte/word addressing - making it optimal for battery-constrained, space-limited embedded systems requiring flexible bus interfacing.
Availability
R1LV3216RSD-5SR#B0 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, automotive infotainment head units, and test & measurement equipment requiring stable component supply across extended product lifecycles.
Supply support for R1LV3216RSD-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and consumer applications.
The R1LV3216R Series was designed specifically for low-voltage, low-power memory applications where battery backup, simple TTL interfacing, and compact packaging are critical - targeting portable instrumentation, industrial control, and automotive subsystems.
FAQ
What is the operating temperature range for R1LV3216RSD-5SR#B0?
The R1LV3216RSD-5SR#B0 is rated for 0°C to +70°C ambient operation, as indicated by the "R" suffix in its part number. This commercial-grade specification aligns with applications such as industrial HMI panels and consumer electronics where extended temperature tolerance is not required. The device's DC and AC characteristics are fully characterized across this range per the REJ03C0367-0100 datasheet.
Does R1LV3216RSD-5SR#B0 require a refresh circuit?
No, the R1LV3216RSD-5SR#B0 is a true static RAM and requires no refresh circuitry or periodic access to retain data. Its architecture uses flip-flop-based memory cells, enabling indefinite data retention as long as power is applied - a key advantage over DRAM in deterministic real-time systems and battery-backed storage.
How does BYTE# pin functionality affect address mapping in R1LV3216RSD-5SR#B0?
When BYTE# is low, the R1LV3216RSD-5SR#B0 enters byte mode: A–1 becomes the LSB, and the device behaves as 4M × 8-bit with DQ0–DQ7 as lower byte and DQ8–DQ15 as upper byte. When BYTE# is high, it operates in word mode (2M × 16-bit) using A0–A20. This hardware-selectable mode eliminates software configuration overhead.
What is the minimum VCC required to retain data in R1LV3216RSD-5SR#B0 during standby?
The R1LV3216RSD-5SR#B0 guarantees data retention down to 2.0V VCC, as specified in the Low Vcc Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 80 µA at +85°C, enabling reliable operation during brown-out conditions or coin-cell backup scenarios without data loss.
Can R1LV3216RSD-5SR#B0 be used in a 16-bit bus system with partial byte writes?
Yes - the R1LV3216RSD-5SR#B0 supports independent upper and lower byte writes via UB# and LB# control signals. In word mode (BYTE# = high), asserting LB# low while keeping UB# high performs a write to DQ0–DQ7 only; asserting UB# low with LB# high writes DQ8–DQ15. This enables efficient 8-bit updates on a 16-bit bus without read-modify-write cycles.
R1LV3216RSD-5SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1LV3216RSD-5SR#B0 FAQ
1.How can I place an order for R1LV3216RSD-5SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSD-5SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSD-5SR#B0 reliable?
The price and inventory of R1LV3216RSD-5SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-5SR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSD-5SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-5SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSD-5SR#B0?
R1LV3216RSD-5SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSD-5SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSD-5SR#B0?
For technical support, including R1LV3216RSD-5SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-5SR#B0 requirements.
6.How does Aetrix verify that R1LV3216RSD-5SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSD-5SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-5SR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSD-5SR#B0?
All R1LV3216RSD-5SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-5SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSD-5SR#B0 part is unused and in its original packaging.
Return procedure for R1LV3216RSD-5SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV3216RSD-5SR#B0 Tags
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