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Renesas R1LV3216RSD-7SI#B0

Part No.:
R1LV3216RSD-7SI#B0
Manufacturer:
Renesas
Category:
Memory
Package:
52-TFSOP (0.350", 8.89mm Width)
Datasheet:
AetrixR1LV3216RSD-7SI#B0.pdf
Description:
IC SRAM 32MBIT PAR 52TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,890

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Product details

Overview

R1LV3216RSD-7SI#B0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 70ns access time and 4µA typical standby current at 3.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control.

For engineers reviewing the R1LV3216RSD-7SI#B0 datasheet, R1LV3216RSD-7SI#B0 pinout, R1LV3216RSD-7SI#B0 application, or R1LV3216RSD-7SI#B0 equivalent, this page delivers verified package mapping (52-pin µTSOP-II), byte/word mode operation, TTL-compatible I/O, no-refresh architecture, and low-voltage data retention down to 2.0V - all critical for embedded SRAM selection in space-constrained, power-sensitive designs.

Technical Context

The R1LV3216RSD-7SI#B0 implements a fully asynchronous, no-clock, no-refresh static RAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and BYTE#-controlled mode switching between word and byte addressing. Its address buffer supports A0–A20 (21 pins) plus A−1 for byte-mode addressing.

It features three-state OR-tie capable outputs, OE#-controlled bus contention prevention, and flexible power management: standby current drops to 4µA (typ) at 3.0V, with guaranteed data retention down to VCC = 2.0V while maintaining ISB1 ≤ 80µA at +85°C - enabling seamless battery backup without external refresh circuitry.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density32 Mbit (2,097,152 × 16-bit or 4,194,304 × 8-bit)
Access Time70 ns - defines maximum read latency under worst-case voltage/temperature conditions
Supply Voltage2.7 V to 3.6 V - enables direct interface with 3.3V logic and compatibility with Li-ion battery discharge profiles
Standby Current4 µA typical at 3.0V/25°C - supports multi-year battery life in always-on backup mode
Data Retention VCC2.0 V minimum - allows memory state hold during brown-out or battery switchover without data loss
Operating Temperature−40°C to +85°C (Industrial grade) - validated for extended thermal environments in factory automation
Package52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - optimized for high-density PCB layouts

Pinout & Package

52-pin micro Thin Small Outline Package (µTSOP-II), normal-bend type, dimensions 10.79 mm × 10.49 mm, pin pitch 0.4 mm.

Pin/TerminalCircuit RoleDesign Meaning
A0–A20Address input (word mode)21-bit address bus supporting 2M-word addressing; A−1 used only in byte mode
DQ0–DQ15Data I/OBi-directional 16-bit data bus with three-state output drivers and OR-tie capability
CS1#, CS2Chip select inputsTwo-level hierarchical chip enable: CS2 controls address/WE#/OE#/LB#/UB# buffers; CS1# primary selection
WE#, OE#, LB#, UB#, BYTE#Control inputsAsynchronous write/read/byte-enable logic; BYTE# selects word (H) or byte (L) addressing mode
Vcc, VssPower supplySingle 2.7–3.6V supply; dual ground pins improve noise immunity and current return path integrity
NCNo connectUnbonded pins (pins 3, 13, 25, 45, 49); must be left floating or tied to Vss per layout guidelines

Key Features

FeatureDesign Value
No clock, no refresh operationEliminates external timing controller overhead and guarantees deterministic access latency in real-time systems
TTL-compatible I/O levelsDirect interfacing with legacy 3.3V microcontrollers and FPGAs without level-shifting circuitry
Byte/word mode via BYTE#Hardware-selectable data width simplifies memory expansion across 8-bit and 16-bit host buses
OR-tie capable outputsEnables parallel connection of multiple R1LV3216RSD-7SI#B0 devices on shared data bus without external logic
Low-voltage data retentionMaintains stored data at VCC ≥ 2.0V, supporting seamless transition to battery backup without volatile data loss

Applications

Portable Medical InstrumentationIndustrial PLC Data Buffering

Use Scenario: Battery-powered handheld ECG monitor requiring non-volatile memory retention during power cycling and firmware updates.

IC Role / Device Role / Timing Role: Primary working memory holding real-time waveform samples and calibration tables with zero-refresh overhead.

Use Value: 4µA standby current extends single-cell Li-ion battery life beyond 3 years; 2.0V data retention ensures no sample loss during hot-swap battery replacement.

Use Scenario: Compact programmable logic controller storing ladder logic execution state and I/O mapping during mains power interruption.

IC Role / Device Role / Timing Role: Dual-port accessible SRAM serving as fast-access scratchpad for runtime variables and configuration registers.

Use Value: 70ns access time meets deterministic scan-cycle deadlines; µTSOP-II footprint fits within 12mm × 12mm controller module constraints.

Automotive Infotainment Head UnitTest & Measurement Equipment Cache

Use Scenario: In-vehicle navigation system retaining GPS position history and UI state during ignition-off periods.

IC Role / Device Role / Timing Role: Battery-backed SRAM preserving volatile context across sleep/wake transitions without EEPROM wear-out.

Use Value: −40°C to +85°C rating ensures reliability in under-dash thermal environments; TTL compatibility avoids level-shifters in MCU-peripheral interconnect.

Use Scenario: Digital oscilloscope capturing high-speed waveform segments into local buffer before transfer to host PC.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer accepting parallel 16-bit ADC output streams at up to 14.3 MHz sustained rate.

Use Value: 2M × 16-bit organization provides 4MB contiguous storage; OR-tie outputs allow cascaded memory banks sharing same data bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-70ZSXI70ns access, 32Mb (2M×16), 2.2–3.6V supply, 25µA max ISB at +85°CHigher standby current; supports deeper sleep modes but lacks BYTE#-controlled byte/word mode flexibilitySelect when ultra-low leakage in extended temperature range is prioritized over pin-compatible byte-mode control
IS61WV3216EDBLL-70BLI70ns access, 32Mb (2M×16), 2.5–3.6V supply, 30µA max ISB at +85°C, 44-pin TSOP-IIDifferent pinout (44-pin vs. 52-pin); no A−1 pin or BYTE# function - fixed 16-bit word-only interfaceChoose when board redesign accommodates 44-pin footprint and byte-mode operation is unnecessary

Compared with CY62167EV30LL-70ZSXI and IS61WV3216EDBLL-70BLI, the R1LV3216RSD-7SI#B0 uniquely combines 4µA typical standby current, hardware-selectable byte/word mode via BYTE#, and 52-pin µTSOP-II packaging - making it optimal for space-constrained, battery-backed systems requiring flexible data-width interfacing without sacrificing retention robustness.

Availability

R1LV3216RSD-7SI#B0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial PLC data buffering, automotive infotainment head units, and test & measurement equipment cache requiring stable component supply across long-lifecycle embedded programs.

Supply support for R1LV3216RSD-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The R1LV3216R Series was designed specifically for low-voltage, low-power static RAM applications where simple interfacing, battery operation, and reliable data retention during power loss are critical - targeting portable, industrial, and automotive subsystems.

FAQ

What is the operating temperature range for the R1LV3216RSD-7SI#B0?

The R1LV3216RSD-7SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number. This specification is validated per the Recommended Operating Conditions table (Page 6) and Absolute Maximum Ratings (Page 5) of the official Renesas datasheet REJ03C0367-0100. The device maintains full functionality-including 70ns access time and 4µA typical standby current-across this full range.

Does the R1LV3216RSD-7SI#B0 require a clock signal or refresh circuitry?

No, the R1LV3216RSD-7SI#B0 is a true static RAM and requires neither a clock signal nor periodic refresh cycles. Its asynchronous design uses standard control signals (CS1#, CS2, WE#, OE#, LB#, UB#) for read/write operations, as confirmed in the Features section (Page 1) and Operation Table (Page 5) of the datasheet. This eliminates timing controller complexity and guarantees deterministic latency in real-time embedded systems.

How does byte-mode operation work on the R1LV3216RSD-7SI#B0?

Byte-mode operation on the R1LV3216RSD-7SI#B0 is enabled by driving BYTE# low, which activates A−1 as an address bit and configures the device as 4M × 8-bit. In this mode, LB# and UB# independently control DQ0–DQ7 and DQ8–DQ15 respectively. The Operation Table (Page 5) explicitly defines byte write/read sequences, and timing parameters tBS/tBR (Page 10) govern BYTE# setup and recovery. This mode is not available on pin-compatible alternatives like IS61WV3216EDBLL-70BLI.

What is the minimum supply voltage required to retain data in the R1LV3216RSD-7SI#B0?

The R1LV3216RSD-7SI#B0 guarantees data retention down to VCC = 2.0 V, as specified in the Low Vcc Data Retention Characteristics table (Page 15) of the datasheet. At this voltage, standby current remains ≤80 µA at +85°C. Retention is maintained as long as one of three conditions holds: CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V, or LB# = UB# ≥ VCC−0.2V with CS1# ≤ 0.2V and CS2 ≥ VCC−0.2V.

Is the R1LV3216RSD-7SI#B0 pin-compatible with other members of the R1LV3216R Series?

Yes, the R1LV3216RSD-7SI#B0 shares identical pinout and footprint with other 52-pin µTSOP (II) variants in the R1LV3216R Series, including R1LV3216RSD-5S% and R1LV3216RSD-7S%. All share the same 52-pin arrangement (Page 2), Pin Description (Page 3), and AC/DC characteristics scaling only with access time (55ns vs. 70ns). The "#B0" suffix denotes tape-and-reel packaging; electrical and mechanical compatibility is preserved across speed grades in the same package variant.

R1LV3216RSD-7SI#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
52-TFSOP (0.350", 8.89mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
32Mbit
Memory Organization:
4M x 8, 2M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
52-TSOP II

R1LV3216RSD-7SI#B0 FAQ

1.How can I place an order for R1LV3216RSD-7SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV3216RSD-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV3216RSD-7SI#B0 reliable?

The price and inventory of R1LV3216RSD-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-7SI#B0 is usually 5 days.

3.What payment methods are accepted for R1LV3216RSD-7SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-7SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV3216RSD-7SI#B0?

R1LV3216RSD-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV3216RSD-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV3216RSD-7SI#B0?

For technical support, including R1LV3216RSD-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-7SI#B0 requirements.

6.How does Aetrix verify that R1LV3216RSD-7SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV3216RSD-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-7SI#B0 meets industry standards.

7.What is the process for return or replacement of R1LV3216RSD-7SI#B0?

All R1LV3216RSD-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-7SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV3216RSD-7SI#B0 part is unused and in its original packaging.

Return procedure for R1LV3216RSD-7SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV3216RSD-7SI#B0 Tags

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