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Renesas R1LV3216RSD-7SI#S0
- Part No.:
- R1LV3216RSD-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV3216RSD-7SI#S0.pdf
- Description:
- IC SRAM 32MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,220
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Product details
Overview
R1LV3216RSD-7SI#S0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 70ns access time and 4µA typical standby current at 3.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control units.
For engineers reviewing the R1LV3216RSD-7SI#S0 datasheet, R1LV3216RSD-7SI#S0 pinout, R1LV3216RSD-7SI#S0 application, or R1LV3216RSD-7SI#S0 equivalent, this page delivers verified package mapping (52-pin µTSOP II), byte/word mode operation, TTL-compatible I/O timing, low-voltage data retention down to 2.0V, and direct replacement guidance for legacy LPSRAM designs requiring no refresh and simple parallel interfacing.
Technical Context
This device implements a fully asynchronous static RAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and BYTE#-controlled mode switching between word and byte addressing. It supports three-state OR-tie capable outputs via OE# and features no internal clocks or refresh circuitry.
Memory organization is configurable: in word mode (BYTE# = H), A0–A20 address 2,097,152 × 16-bit locations; in byte mode (BYTE# = L), A–1–A20 address 4,194,304 × 8-bit locations with A–1 used as data bit DQ15. Standby current drops to ≤80µA at +85°C under CS2-controlled retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 32 Mbit (2,097,152 × 16-bit or 4,194,304 × 8-bit) |
| Supply voltage | 2.7V to 3.6V - enables direct interface with 3.3V logic and battery-backed systems |
| Access time | 70 ns - guarantees deterministic read/write latency without wait states in 33 MHz bus environments |
| Standby current | 4 µA typical at 3.0V/25°C - extends battery life in always-on backup memory applications |
| Data retention VCC | 2.0V minimum - maintains stored data during brown-out or backup power transitions |
| Operating temperature | –40°C to +85°C (Industrial grade) - qualified for embedded control and automotive body electronics |
| I/O compatibility | TTL - eliminates level-shifting requirements when interfacing with legacy microcontrollers and FPGAs |
Pinout & Package
Package: 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch, normal-bend leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus for 2M-word addressing; A–1 used as DQ15 in byte mode |
| DQ0–DQ15 | Data I/O bidirectional | Common data bus supporting 16-bit word or 8-bit byte transfers with three-state control |
| CS1#, CS2 | Chip select inputs | CS1# active-low primary enable; CS2 active-high secondary enable - enables hierarchical memory decoding |
| WE#, OE#, LB#, UB# | Control inputs | WE# controls write strobe; OE# gates output drivers; LB#/UB# select byte lanes independently |
| BYTE# | Mode configuration | Low = byte mode (A–1 = DQ15); High = word mode - determines address space and data width behavior |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; dual ground pins improve noise immunity in high-density layouts |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller and associated timing overhead in microcontroller-based systems |
| Byte/word mode switch | Runtime reconfiguration via BYTE# pin - supports mixed-width peripherals without hardware redesign |
| OR-tie capable outputs | Enables direct wire-OR connection of multiple devices on shared data bus without external logic |
| Low-voltage data retention | Maintains valid data at VCC ≥ 2.0V - critical for seamless switchover between main and backup power rails |
| TTL-compatible signaling | Direct interface with 3.3V/5V microcontrollers, CPLDs, and legacy ASICs without level translation |
Applications
| Portable Medical Monitors | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Battery-powered ECG and SpO₂ monitors storing real-time waveform buffers and calibration tables during AC power loss. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical patient data and configuration with zero-refresh operation and sub-100µA standby draw. Use Value: Enables >72-hour battery runtime in backup mode while preserving integrity of time-stamped physiological records. |
Use Scenario: Embedded controllers in factory-floor PLCs capturing sensor history and alarm logs across power cycles. IC Role / Device Role / Timing Role: Parallel-access SRAM serving as fast-access scratchpad for cyclic data acquisition and timestamped event storage. Use Value: Delivers deterministic 70ns read/write latency and 2.0V data retention - ensuring no log entries are lost during brownouts. |
| Automotive Body Control Modules | Test & Measurement Equipment |
|
Use Scenario: Door module ECUs retaining window position, mirror settings, and fault codes after ignition-off. IC Role / Device Role / Timing Role: Low-voltage backup memory interfaced directly to 3.3V CAN microcontrollers with CS2-controlled retention mode. Use Value: Guarantees reliable parameter retention down to 2.0V supply and –40°C to +85°C ambient - meeting AEC-Q100 stress requirements. |
Use Scenario: Digital oscilloscopes and logic analyzers buffering acquired samples prior to USB transfer. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as deep acquisition buffer with OR-tie capability for multi-channel data merging. Use Value: Supports burst writes at 14.3 MB/s (70ns cycle) and concurrent reads/writes via LB#/UB# - maximizing capture depth without FIFO bottlenecks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 48-pin TSOP I, 70ns, 2.2–3.6V, 12µA standby @ 3V/25°C | Higher standby current; lacks BYTE#-controlled byte/word mode flexibility | Preferred where board space allows larger 48-pin footprint and byte-mode agility is not required |
| IS61WV204816BLL-70TLI | 48-pin TSOP I, 70ns, 2.3–3.6V, 25µA standby @ 3V/25°C, no BYTE# pin | Fixed 16-bit word-only interface; higher leakage limits use in ultra-low-power battery backup | Selected when system uses only word-wide accesses and cost-per-bit optimization outweighs mode flexibility |
Compared with CY62167EV30LL-70ZSXI and IS61WV204816BLL-70TLI, the R1LV3216RSD-7SI#S0 uniquely combines 52-pin compact packaging, 4µA standby, and runtime byte/word mode selection - making it optimal for space-constrained, battery-sensitive designs requiring interface adaptability.
Availability
R1LV3216RSD-7SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data logging, automotive body control modules, and test & measurement equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV3216RSD-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV3216R Series was designed specifically for low-power, battery-operated memory applications demanding zero-refresh operation, wide voltage tolerance, and flexible byte/word addressing - targeting portable instrumentation and industrial control systems.
FAQ
What is the maximum operating frequency supported by R1LV3216RSD-7SI#S0?
The R1LV3216RSD-7SI#S0 does not operate on a clock signal - it is an asynchronous SRAM. Its 70ns access time corresponds to a maximum effective bus frequency of ~14.3 MHz for consecutive random accesses. System timing must comply with tRC (70ns read cycle time) and tWC (70ns write cycle time) as defined in the datasheet's AC characteristics table.
Does R1LV3216RSD-7SI#S0 support true 8-bit operation?
Yes. When BYTE# is driven low, the R1LV3216RSD-7SI#S0 enters byte mode: A–1 becomes DQ15, and addresses A0–A20 map to 4,194,304 × 8-bit locations. LB# and UB# independently enable lower (DQ0–DQ7) or upper (DQ8–DQ15) byte lanes, enabling true 8-bit data transfers without software masking.
What is the minimum VCC required to retain data in R1LV3216RSD-7SI#S0?
The R1LV3216RSD-7SI#S0 guarantees data retention down to VCC = 2.0V under specified conditions (CS2-controlled retention mode, Ta ≤ +85°C). At 2.0V, retention current is ≤80µA. Below 2.0V, data integrity is not assured - design margins should maintain VCC ≥ 2.2V during backup operation.
How is the R1LV3216RSD-7SI#S0 pinout different from the 48-pin TSOP version?
The R1LV3216RSD-7SI#S0 uses a 52-pin µTSOP (II) package with 0.4mm pitch, whereas the 48-pin variant (e.g., R1LV3216RSA-7S%) uses 0.5mm pitch TSOP (I). Pin functions differ: µTSOP places A19/A20 adjacent to CS1#, relocates Vcc/Vss, and adds NC pins - requiring PCB layout revision. No pin-to-pin compatibility exists between the two packages.
Can R1LV3216RSD-7SI#S0 be used with a 5V microcontroller?
No. The R1LV3216RSD-7SI#S0 is strictly a 2.7–3.6V device with TTL-compatible input thresholds (VIH = 2.4V min, VIL = 0.4V max), but its outputs are not 5V-tolerant. Interfacing with a 5V microcontroller requires level-shifting on all address, data, and control lines - or use of a 3.3V-native controller such as ARM Cortex-M3/M4 or Renesas RX series.
R1LV3216RSD-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV3216RSD-7SI#S0 FAQ
1.How can I place an order for R1LV3216RSD-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSD-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSD-7SI#S0 reliable?
The price and inventory of R1LV3216RSD-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSD-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSD-7SI#S0?
R1LV3216RSD-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSD-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSD-7SI#S0?
For technical support, including R1LV3216RSD-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-7SI#S0 requirements.
6.How does Aetrix verify that R1LV3216RSD-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSD-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSD-7SI#S0?
All R1LV3216RSD-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSD-7SI#S0 part is unused and in its original packaging.
Return procedure for R1LV3216RSD-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV3216RSD-7SI#S0 Tags
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