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Renesas R1LV5256ESA-5SI#B0
- Part No.:
- R1LV5256ESA-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV5256ESA-5SI#B0.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:8,373
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Product details
Overview
R1LV5256ESA-5SI#B0 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating from a single 2.7–3.6V supply, with 55 ns access time and industrial temperature range (–40°C to +85°C), packaged in 28-pin TSOP. It serves as non-volatile memory buffer in battery-backed systems requiring zero refresh, TTL-compatible interfacing, and ultra-low standby current.
For engineers reviewing the R1LV5256ESA-5SI#B0 datasheet, R1LV5256ESA-5SI#B0 pinout, R1LV5256ESA-5SI#B0 application, or R1LV5256ESA-5SI#B0 equivalent, key selection criteria include its 1 µA typical standby current at 3.0V, no-clock/no-refresh operation, CS#/OE#/WE# control architecture, and compatibility with legacy 8-bit parallel bus systems in space-constrained industrial designs.
Technical Context
This SRAM implements asynchronous parallel interface logic with three-state bidirectional DQ0–DQ7 I/Os, chip-select–gated address decoding, and independent output-enable control to prevent bus contention. Its internal architecture features a 32k-word × 8-bit memory array with column/row decoders, sense/write amplifiers, and clock generator for timing synchronization - all fabricated on Renesas' 0.15 µm CMOS/TFT process.
Operation relies on active-low control signals: CS# enables memory access, WE# determines read/write direction, and OE# gates output drivers. Standby mode is entered when CS# is high, reducing ICC to ≤10 µA at +85°C; data retention remains valid down to VCC = 2.0V with CS# held high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 Kbit (32,768 words × 8 bits) - supports byte-wide data transfers without external multiplexing. |
| Access Time | 55 ns - ensures compatibility with 18 MHz bus timing in microcontroller-based systems. |
| Supply Voltage | 2.7–3.6 V - matches Li-ion battery discharge profile and eliminates need for voltage regulation in portable designs. |
| Standby Current | 10 µA max at +85°C - enables multi-year battery backup in real-time clock and configuration storage applications. |
| Operating Temp | –40°C to +85°C - qualified for industrial-grade embedded control and automotive body electronics. |
| I/O Interface | TTL-compatible inputs/outputs - allows direct connection to legacy MCU GPIOs without level-shifting circuitry. |
| Data Retention VCC | 2.0 V min - maintains stored data during brown-out or sleep-mode battery sag without external capacitor hold-up. |
Pinout & Package
Package: 28-pin TSOP (8 mm × 13.4 mm, normal-bend type, PTSA0028ZA-A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply input; bypass capacitor required near pin for noise suppression. |
| Vss | Ground | Signal and power ground reference; must be low-impedance connection to system GND plane. |
| A0–A14 | Address inputs | 15-bit address bus accepting 0x0000–0x7FFF; latched on falling edge of CS# during access. |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit parallel data path; high-impedance when CS# or OE# is high to enable OR-tie bus sharing. |
| CS# | Chip select | Active-low enable; controls internal buffers and enters standby when high (reducing ICC to µA range). |
| WE# | Write enable | Active-low write strobe; low with CS# low initiates write cycle; high with CS# low enables read. |
| OE# | Output enable | Active-low output gate; prevents bus contention when multiple devices share DQ lines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates periodic memory refresh overhead in MCU firmware and reduces system power management complexity. |
| 1 µA typical standby current | Extends battery life in always-on monitoring nodes where memory must retain state between wake cycles. |
| OR-tie capability | Enables multiple R1LV5256ESA-5SI#B0 devices to share a common 8-bit data bus using open-drain or wired-OR topology. |
| TTL-compatible I/O | Direct interface with legacy 5V-tolerant or 3.3V microcontrollers without level translators or pull-up resistors. |
| Low-voltage data retention | Maintains valid data at VCC ≥ 2.0V, supporting graceful degradation during power failure or battery depletion. |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Store |
|---|---|
Use Scenario: Storing runtime I/O mapping and calibration tables in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing non-refresh, low-latency read/write access for deterministic scan-cycle execution. Use Value: 55 ns access time meets sub-100 µs I/O update deadlines; –40°C to +85°C rating ensures reliability inside unconditioned control panels. | Use Scenario: Holding device-specific calibration coefficients and user preferences in portable diagnostic equipment with coin-cell backup. IC Role / Device Role / Timing Role: Battery-backed memory buffer retaining critical settings during main power removal or shutdown sequences. Use Value: 10 µA max ISB at +85°C extends 10-year coin-cell lifetime; 2.0V data retention threshold prevents corruption during brown-out events. |
| Automotive Body Control Module | Smart Meter Firmware Cache |
Use Scenario: Caching door lock status, mirror position, and lighting profiles in vehicle body control units powered by 12V battery with wide voltage transients. IC Role / Device Role / Timing Role: Low-voltage SRAM interfaced directly to 8-bit automotive MCU via parallel bus, tolerant of 2.7–3.6V supply variation. Use Value: TTL-compatible I/O withstands ESD events per ISO 10605; industrial temp grade supports under-hood mounting near fuse boxes. | Use Scenario: Temporarily storing tariff schedules and consumption logs in utility smart meters with intermittent RF transmission windows. IC Role / Device Role / Timing Role: High-reliability memory buffer enabling fast log writes during burst capture, then low-power retention between uploads. Use Value: No-refresh operation avoids data loss during RF interference; 28-pin TSOP footprint fits compact meter PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus width (256K × 16), 10 ns access, 3.3V only, 44-pin TSOP | Requires wider data bus and PCB layout change; higher speed but higher standby current (15 µA) | Select when system demands faster access and 16-bit data path; not pin-compatible. |
| AS6C4008-55ZIN | Same 8-bit × 32k organization, 55 ns, –40°C to +85°C, 28-pin SOP (not TSOP) | Different package (SOP vs TSOP); slightly higher standby current (20 µA typ) | Use if SOP footprint is preferred; requires board rework due to different pinout and thermal profile. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV5256ESA-5SI#B0 offers optimal balance of industrial temperature support, ultra-low standby current, and TSOP packaging for space-constrained battery-backed designs - without requiring bus width expansion or layout redesign.
Availability
R1LV5256ESA-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for R1LV5256ESA-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV5256E Series was designed specifically for low-voltage, low-power, battery-operated memory applications where simplicity, reliability, and long-term data retention are critical - targeting portable instrumentation, industrial controllers, and automotive subsystems.
FAQ
What is the maximum operating frequency supported by R1LV5256ESA-5SI#B0?
R1LV5256ESA-5SI#B0 is an asynchronous SRAM with no internal clock; its timing is governed by access time and cycle time specifications. With a 55 ns access time and 55 ns cycle time, it supports reliable operation up to approximately 18 MHz in systems where address and control setup/hold times are met - verified under VCC = 2.7–3.6V and Ta = –40°C to +85°C conditions per the R10DS0068EJ0100 datasheet.
Does R1LV5256ESA-5SI#B0 require external refresh circuitry?
No, R1LV5256ESA-5SI#B0 is a static RAM and does not require external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and CS# is held low during active use. The "No refresh" feature is explicitly listed in the official Renesas datasheet and eliminates timing-critical refresh overhead in firmware design.
What is the minimum supply voltage for data retention in R1LV5256ESA-5SI#B0?
The minimum supply voltage for guaranteed data retention in R1LV5256ESA-5SI#B0 is 2.0 V, provided CS# is held high (≥ VCC – 0.2 V) and ambient temperature does not exceed +85°C. This specification is confirmed in the "Low Vcc Data Retention Characteristics" table on page 12 of the R10DS0068EJ0100 datasheet.
Is R1LV5256ESA-5SI#B0 pin-compatible with other members of the R1LV5256E Series?
Yes, all R1LV5256E Series variants - including R1LV5256ESA-5SI#B0, R1LV5256ESA-7SI#B0, and R1LV5256ESP-5SI#B0 - share identical pinouts within the same package type (TSOP or SOP). However, R1LV5256ESA-5SI#B0 (TSOP) is not pin-compatible with SOP-packaged variants due to differing physical pin arrangements and package dimensions.
What is the typical standby current of R1LV5256ESA-5SI#B0 at room temperature?
The typical standby current of R1LV5256ESA-5SI#B0 is 1 µA at 3.0 V and +25°C, as specified in the DC Characteristics table on page 5 of the R10DS0068EJ0100 datasheet. Maximum standby current is 10 µA at +85°C, making it suitable for long-duration battery-backed applications.
R1LV5256ESA-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LV5256ESA-5SI#B0 FAQ
1.How can I place an order for R1LV5256ESA-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESA-5SI#B0 reliable?
The price and inventory of R1LV5256ESA-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESA-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESA-5SI#B0?
R1LV5256ESA-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESA-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESA-5SI#B0?
For technical support, including R1LV5256ESA-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SI#B0 requirements.
6.How does Aetrix verify that R1LV5256ESA-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESA-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESA-5SI#B0?
All R1LV5256ESA-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESA-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV5256ESA-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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