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Renesas R1LV5256ESA-5SI#B1
- Part No.:
- R1LV5256ESA-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV5256ESA-5SI#B1.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:677
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Product details
Overview
R1LV5256ESA-5SI#B1 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin TSOP package, operating from 2.7V to 3.6V with 55 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O-designed for battery-backed memory applications in portable instrumentation and industrial controllers.
For engineers reviewing the R1LV5256ESA-5SI#B1 datasheet, R1LV5256ESA-5SI#B1 pinout, R1LV5256ESA-5SI#B1 application, or R1LV5256ESA-5SI#B1 equivalent, key selection criteria include single-supply operation, no-refresh architecture, OR-tie capable three-state outputs, CS#-controlled data retention down to 2.0V, and compatibility with legacy 28-pin SRAM footprints in space-constrained embedded systems.
Technical Context
The R1LV5256ESA-5SI#B1 implements a fully static, asynchronous memory array with no internal clocks or refresh circuitry, relying on address latch and control signal timing (CS#, WE#, OE#) for read/write sequencing. Its architecture supports common I/O with bidirectional DQ0–DQ7 lines and chip-select–gated output enable for bus sharing.
It features dual-mode power management: active operation draws ≤25 mA average current under full cycling, while deep standby (CS# high) reduces current to ≤0.33 mA or as low as 0.6 µA at +25°C-enabling reliable data retention during battery backup without external supervision.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 words × 8 bits): sufficient for firmware buffers, sensor history logs, or configuration storage in microcontroller co-systems. |
| Access time | 55 ns max: enables direct interface with 10–15 MHz microcontrollers without wait states. |
| Supply voltage | 2.7 V to 3.6 V: matches Li-ion/Li-Po battery discharge profiles and eliminates need for voltage regulation in portable designs. |
| Standby current | 0.6 µA typical at 3.0 V, +25°C: extends battery life to years in always-on backup mode. |
| Data retention VCC | 2.0 V min: maintains stored data during brown-out or battery sag without data loss. |
| I/O interface | TTL-compatible inputs/outputs: ensures interoperability with legacy 5 V-tolerant logic families using level-shifting or direct connection at 3.3 V. |
| Package | 28-pin TSOP (8 mm × 13.4 mm): surface-mount compatible with high-density PCB layouts and automated assembly. |
Pinout & Package
Package: 28-pin plastic TSOP (8 mm × 13.4 mm), RoHS-compliant, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6 V supply rail; decoupling capacitor required near pin for noise immunity. |
| Vss (GND) | Ground reference | System ground return path; must be low-impedance and tied to PCB ground plane. |
| A0–A14 | Address inputs | 15-bit address bus accepting 0x0000–0x7FFF; latched on CS# assertion for memory location selection. |
| DQ0–DQ7 | Bi-directional data I/O | 8-bit shared data bus; direction controlled by WE# and OE#; supports OR-tie for multi-device bus sharing. |
| CS# | Chip select (active-low) | Enables device operation; when high, places outputs in high-Z and enters ultra-low-power retention mode. |
| WE# | Write enable (active-low) | Controls write cycle initiation; low with CS# low initiates write; high during read or standby. |
| OE# | Output enable (active-low) | Gates output drivers; prevents bus contention when multiple devices share DQ lines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing constraints-ideal for simple MCU-based designs without dedicated DRAM controllers. |
| Low-voltage data retention | Maintains valid data at Vcc ≥ 2.0 V, enabling seamless transition to battery backup without data corruption or external supervisor ICs. |
| Three-state OR-tie outputs | Allows multiple R1LV5256ESA-5SI#B1 devices to share a common data bus without external bus transceivers or arbitration logic. |
| TTL-compatible signaling | Direct interface with legacy 3.3 V and mixed-voltage microcontrollers (e.g., ARM Cortex-M0+, Renesas RL78) without level translation. |
| Small stand-by current | 0.6 µA typical at +25°C enables >10-year battery life in coin-cell–powered backup applications (e.g., real-time clock registers, calibration tables). |
Applications
| Portable Medical Sensors | Industrial PLC Data Logging |
|---|---|
Use Scenario: Continuous acquisition of ECG waveforms or glucose readings in handheld diagnostic devices with intermittent wireless upload. IC Role / Device Role / Timing Role: Non-volatile buffer storing up to 32 KB of raw sensor data between transmission cycles; retains content during sleep or battery swap. Use Value: Eliminates need for EEPROM wear leveling or flash programming delays-data written at full speed (55 ns) and preserved indefinitely at 2.0 V Vcc. | Use Scenario: Storing operational history, fault codes, and setpoint changes in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for runtime variables and cyclic data logging; powered from backup supercapacitor during AC outage. Use Value: Guarantees zero-data-loss retention for ≥72 hours at 85°C with <10 µA standby draw-meeting IEC 61131-2 environmental requirements. |
| Smart Meter Firmware Cache | Automotive Body Control Module |
Use Scenario: Caching firmware update payloads and cryptographic keys prior to secure flash programming in electricity/water meters. IC Role / Device Role / Timing Role: High-reliability temporary storage bridging communication and flash write phases; isolated from main power domain. Use Value: Withstands 100,000+ write cycles and operates across -40°C to +85°C-exceeding ANSI C12.22 smart meter temperature specs. | Use Scenario: Storing door lock status, window position, and lighting configuration in automotive BCMs with battery disconnect capability. IC Role / Device Role / Timing Role: Retentive memory holding user preferences and safety-critical state during ignition-off periods. Use Value: Valid data retention at 2.0 V Vcc ensures uninterrupted operation during cold-cranking voltage dips below 6 V in 12 V systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3 V only, 44-pin TSOP | Higher bandwidth but larger footprint and incompatible pinout; requires PCB redesign. | Select only if 16-bit data path and faster timing are mandatory and layout revision is feasible. |
| AS6C4008-55ZIN | 2.7–5.5 V supply, 55 ns access, 28-pin SOP, 1 µA standby (typ) | Same pin count and function mapping, but SOP package; slightly higher standby current and wider Vcc range. | Preferred for through-hole prototyping or where TSOP reflow is unavailable; verify thermal profile compatibility. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV5256ESA-5SI#B1 offers optimal balance of ultra-low standby current, TSOP footprint compatibility, and guaranteed 2.0 V data retention-making it the most suitable choice for battery-sensitive, space-constrained embedded systems requiring proven reliability over temperature.
Availability
R1LV5256ESA-5SI#B1 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data logging, and smart meter firmware caching requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for R1LV5256ESA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV5256E Series was developed specifically for low-voltage, battery-operated memory applications demanding zero-refresh operation, extended data retention, and minimal standby power-targeting portable instrumentation, industrial controllers, and energy metering systems.
FAQ
What is the minimum supply voltage for data retention in R1LV5256ESA-5SI#B1?
The R1LV5256ESA-5SI#B1 guarantees data retention down to 2.0 V Vcc when CS# is held high and ambient temperature is within specification. This allows continued memory integrity during brown-out conditions or battery sag in portable equipment. The retention current remains below 10 µA even at +85°C, ensuring multi-year backup operation with small primary cells. Full functionality resumes immediately upon Vcc restoration above 2.7 V without initialization delay.
Does R1LV5256ESA-5SI#B1 require a clock or refresh signal?
No, the R1LV5256ESA-5SI#B1 is a fully static RAM with no internal clock or refresh circuitry. It retains data indefinitely as long as power is applied and CS# is asserted appropriately. All operations are asynchronous and controlled solely by address, CS#, WE#, and OE# timing-eliminating system-level refresh overhead and simplifying integration with resource-constrained MCUs. This architecture also avoids refresh-induced current spikes that could interfere with sensitive analog circuits.
Can R1LV5256ESA-5SI#B1 be used with 5 V logic systems?
The R1LV5256ESA-5SI#B1 has TTL-compatible inputs (VIH = 2.0 V min, VIL = 0.6 V max) and outputs (VOH ≥ 2.4 V at -0.5 mA), making it interoperable with 5 V systems when operated at 3.3 V supply. However, its absolute maximum input voltage is Vcc + 0.3 V, so direct 5 V input signals require series resistors or level translators. For robust 5 V interface, use with a 3.3 V supply and external 5 V–to–3.3 V translators on address/control lines, or select a 5 V tolerant variant if available.
What is the pin compatibility between R1LV5256ESA-5SI#B1 and R1LV5256ESP-5SI#B1?
The R1LV5256ESA-5SI#B1 (28-pin TSOP) and R1LV5256ESP-5SI#B1 (28-pin SOP) share identical pin functions and signal assignments per the Renesas datasheet, but differ in physical package dimensions, lead pitch, and mounting method. They are not mechanically interchangeable-TSOP requires fine-pitch SMT reflow, while SOP supports both SMT and through-hole assembly. Electrical behavior, timing, and DC specs are identical across both packages.
How does the OR-tie capability of R1LV5256ESA-5SI#B1 simplify bus design?
The R1LV5256ESA-5SI#B1's three-state outputs support OR-tie (wired-OR) connection, allowing multiple devices to drive the same DQ bus without external bus transceivers. When one device asserts low and others are in high-Z (via CS# or OE#), the net pulls low; all high-Z yields high via pull-up. This enables compact multi-SRAM configurations-for example, expanding memory width or depth in legacy 8-bit systems-without additional logic or routing complexity, reducing BOM cost and PCB area.
R1LV5256ESA-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LV5256ESA-5SI#B1 FAQ
1.How can I place an order for R1LV5256ESA-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESA-5SI#B1 reliable?
The price and inventory of R1LV5256ESA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESA-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESA-5SI#B1?
R1LV5256ESA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESA-5SI#B1?
For technical support, including R1LV5256ESA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SI#B1 requirements.
6.How does Aetrix verify that R1LV5256ESA-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESA-5SI#B1?
All R1LV5256ESA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESA-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV5256ESA-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV5256ESA-5SI#B1 Tags
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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