Renesas R1LV5256ESA-5SI#S0
- Part No.:
- R1LV5256ESA-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV5256ESA-5SI#S0.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:1,142
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Product details
Overview
R1LV5256ESA-5SI#S0 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin TSOP package, operating from 2.7V to 3.6V with 55 ns access time, 0.6 µA typical standby current at 3.0V, TTL-compatible I/O, and no refresh requirement-designed for battery-backed memory systems in portable instrumentation and industrial controllers.
For engineers reviewing the R1LV5256ESA-5SI#S0 datasheet, R1LV5256ESA-5SI#S0 pinout, R1LV5256ESA-5SI#S0 application, or R1LV5256ESA-5SI#S0 equivalent, this page delivers verified electrical specs, TSOP pin mapping, low-voltage data retention behavior, and direct alternatives for memory subsystem design and BOM replacement.
Technical Context
The R1LV5256ESA-5SI#S0 implements a fully asynchronous SRAM architecture with independent chip select (CS#), output enable (OE#), and write enable (WE#) controls-enabling seamless integration into microcontroller-based systems without clocking or timing coordination. Its 32k-word × 8-bit organization supports byte-wide data transfers with common I/O pins and three-state outputs for bus sharing.
It features dual power management modes: active operation with 14 mA typical ICC1 (full cycle), and ultra-low standby with 0.6 µA ISB1 at +25°C when CS# is high. Data retention is guaranteed down to 2.0V VCC with controlled CS# assertion, supporting battery backup applications where supply voltage may sag during sleep.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 × 8-bit) - supports full byte-accessed storage for firmware buffers or real-time data logging without external width expansion. |
| Access time | 55 ns - enables direct interface with 18 MHz microcontrollers without wait states in standard bus cycles. |
| Supply voltage | 2.7 V to 3.6 V - compatible with single-cell Li-ion or regulated 3.3 V rails, eliminating level-shifting in portable designs. |
| Standby current | 0.6 µA typical at 3.0 V, +25°C - extends battery life to years in always-on monitoring nodes with infrequent wake-ups. |
| Data retention VCC | 2.0 V minimum - maintains stored configuration or calibration data during brown-out or backup battery discharge. |
| I/O compatibility | TTL input thresholds (VIH = 2.0 V, VIL = 0.6 V) and output drive (VOH = 2.4 V @ –0.5 mA) - ensures interoperability with legacy 3.3 V logic families. |
| Package | 28-pin TSOP (8 mm × 13.4 mm) - surface-mount footprint optimized for space-constrained PCBs in handheld and edge-sensor modules. |
Pinout & Package
28-pin plastic TSOP (Thin Small Outline Package), 8 mm × 13.4 mm body, 0.55 mm pitch, JEDEC MO-153 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6 V supply rail; decoupling capacitor required within 5 mm for stable read/write timing. |
| Vss (GND) | Ground reference | Common return path for all signals; must be connected to low-impedance system ground plane. |
| A0–A14 | Address inputs | 15-bit address bus accepting 0x0000–0x7FFF; latched on CS#/WE# transitions, no internal address register. |
| DQ0–DQ7 | Bi-directional data I/O | Shared 8-bit data bus with three-state control via OE# and CS#; supports OR-tie for memory expansion. |
| CS# | Chip select (active low) | Enables device operation; high state forces all outputs to high-Z and reduces current to standby level. |
| WE# | Write enable (active low) | Controls write cycle initiation; low with CS# low writes data from DQ bus into addressed location. |
| OE# | Output enable (active low) | Gates read data onto DQ lines; prevents bus contention when multiple devices share same data bus. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh circuitry or software overhead-ideal for simple MCU-based systems with limited processing resources. |
| Low-voltage data retention | Maintains valid data at VCC ≥ 2.0 V with CS# asserted, enabling reliable operation during battery voltage decay in backup mode. |
| OR-tie capability | Three-state outputs allow parallel connection of multiple R1LV5256ESA-5SI#S0 devices on shared data bus without external logic. |
| TTL-compatible signaling | Direct interface with 3.3 V microcontrollers and FPGAs without level translators-reduces BOM count and layout complexity. |
| Small stand-by current | 0.6 µA typical at +25°C minimizes quiescent drain in always-on sensor nodes, extending shelf life and field deployment duration. |
Applications
| Portable Medical Sensors | Industrial PLC I/O Modules |
|---|---|
Use Scenario: Battery-powered ECG patch continuously logs waveform data during patient ambulation, entering deep sleep between transmissions. IC Role / Device Role / Timing Role: Non-volatile buffer storing 30 seconds of raw analog samples before wireless upload; retains data during 3.0 V → 2.2 V battery sag. Use Value: 0.6 µA standby current enables >2-year shelf life on coin cell; 55 ns access supports real-time sampling at 20 kSPS without CPU intervention. |
Use Scenario: Modular PLC base unit stores configuration parameters and last-known I/O states across power cycles and firmware updates. IC Role / Device Role / Timing Role: Fast-access configuration RAM holding IP settings, calibration offsets, and watchdog timeout values-read at boot and updated during commissioning. Use Value: TTL compatibility allows direct connection to ARM Cortex-M4 GPIOs; 28-pin TSOP fits tight spacing in DIN-rail mounted enclosures. |
| Smart Meter Data Logging | Automotive Body Control Units |
Use Scenario: Electricity meter records kWh consumption every 15 minutes and retains 30 days of history during grid outages. IC Role / Device Role / Timing Role: Backup memory preserving billing data during AC loss; powered by supercapacitor charged from mains. Use Value: Data retention down to 2.0 V ensures integrity through full capacitor discharge; 32k × 8-bit capacity holds 960 hourly records with metadata. |
Use Scenario: BCM stores door lock status, mirror position, and seat memory settings while vehicle is parked and main battery is disconnected. IC Role / Device Role / Timing Role: Low-leakage SRAM retaining user preferences across ignition cycles using parasitic current from battery sense line. Use Value: 8 µA max ISB at +85°C meets automotive thermal requirements; TSOP package withstands reflow and vibration per AEC-Q200 Class 2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3 V only, 32-pin TSOP | Higher bandwidth but wider data path; requires PCB redesign for byte-to-word alignment | Select if system uses 16-bit microcontroller bus and needs faster access; not drop-in for R1LV5256ESA-5SI#S0. |
| AS6C4008-55TIN | Same 32k × 8-bit, 55 ns, 2.7–3.6 V, 28-pin TSOP-but 2 µA typical ISB, no low-VCC retention spec | Lower cost but lacks guaranteed 2.0 V data retention; unsuitable for critical backup scenarios | Acceptable for non-critical buffering where battery backup is not required; verify retention behavior per unit. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the R1LV5256ESA-5SI#S0 uniquely balances ultra-low standby current, validated 2.0 V data retention, and pin-compatible 28-pin TSOP packaging-making it optimal for space- and power-constrained embedded systems requiring robust non-refresh memory.
Availability
R1LV5256ESA-5SI#S0 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, and smart meter data logging requiring stable component supply, long-lifecycle support, and consistent TSOP packaging across production batches.
Supply support for R1LV5256ESA-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV5256E Series was developed specifically for low-voltage, low-power memory applications in battery-operated and backup-critical systems-emphasizing simplicity, reliability, and minimal external component count.
FAQ
What is the maximum operating temperature range for the R1LV5256ESA-5SI#S0?
The R1LV5256ESA-5SI#S0 is rated for continuous operation from –40°C to +85°C ambient temperature. This industrial-grade range is validated across all DC and AC specifications-including access time, standby current, and data retention-ensuring reliable performance in factory automation, outdoor metering, and vehicle-mounted electronics where thermal cycling occurs.
Does the R1LV5256ESA-5SI#S0 require an external clock or refresh signal?
No, the R1LV5256ESA-5SI#S0 is a true static RAM and requires neither an external clock nor periodic refresh cycles. Its CMOS latch-based memory cells retain data as long as power is applied and CS# remains low during access. This eliminates timing-critical controller overhead and simplifies firmware design for resource-constrained MCUs.
Can the R1LV5256ESA-5SI#S0 retain data when VCC drops below 2.7 V?
Yes-the R1LV5256ESA-5SI#S0 guarantees data retention down to 2.0 V VCC when CS# is held high (deselected). At +25°C, typical retention current is 0.6 µA, rising to 10 µA at +85°C. This feature enables use with backup capacitors or primary batteries that discharge below nominal voltage without data loss.
What is the function of the OE# pin on the R1LV5256ESA-5SI#S0?
The OE# (output enable) pin on the R1LV5256ESA-5SI#S0 controls three-state output drivers on the DQ0–DQ7 bus. When OE# is low and CS# is low, valid read data appears on DQ pins. When OE# is high, outputs enter high-impedance state-even during active CS#, preventing bus contention in multi-device systems sharing the same data lines.
Is the R1LV5256ESA-5SI#S0 pin-compatible with other 28-pin TSOP SRAMs like the AS6C4008?
The R1LV5256ESA-5SI#S0 shares identical 28-pin TSOP mechanical dimensions and pinout with the AS6C4008-55TIN (address, data, control, and power pins match one-to-one). However, differences in timing margins and low-voltage retention behavior mean functional equivalence must be confirmed per application-no guarantee of drop-in replacement without validation.
R1LV5256ESA-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LV5256ESA-5SI#S0 FAQ
1.How can I place an order for R1LV5256ESA-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESA-5SI#S0 reliable?
The price and inventory of R1LV5256ESA-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESA-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESA-5SI#S0?
R1LV5256ESA-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESA-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESA-5SI#S0?
For technical support, including R1LV5256ESA-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SI#S0 requirements.
6.How does Aetrix verify that R1LV5256ESA-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESA-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESA-5SI#S0?
All R1LV5256ESA-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESA-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV5256ESA-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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