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Renesas R1LV5256ESA-5SI#S0

Part No.:
R1LV5256ESA-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
28-TSSOP (0.465", 11.80mm Width)
Datasheet:
AetrixR1LV5256ESA-5SI#S0.pdf
Description:
IC SRAM 256KBIT PAR 28TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,142

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Product details

Overview

R1LV5256ESA-5SI#S0 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin TSOP package, operating from 2.7V to 3.6V with 55 ns access time, 0.6 µA typical standby current at 3.0V, TTL-compatible I/O, and no refresh requirement-designed for battery-backed memory systems in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV5256ESA-5SI#S0 datasheet, R1LV5256ESA-5SI#S0 pinout, R1LV5256ESA-5SI#S0 application, or R1LV5256ESA-5SI#S0 equivalent, this page delivers verified electrical specs, TSOP pin mapping, low-voltage data retention behavior, and direct alternatives for memory subsystem design and BOM replacement.

Technical Context

The R1LV5256ESA-5SI#S0 implements a fully asynchronous SRAM architecture with independent chip select (CS#), output enable (OE#), and write enable (WE#) controls-enabling seamless integration into microcontroller-based systems without clocking or timing coordination. Its 32k-word × 8-bit organization supports byte-wide data transfers with common I/O pins and three-state outputs for bus sharing.

It features dual power management modes: active operation with 14 mA typical ICC1 (full cycle), and ultra-low standby with 0.6 µA ISB1 at +25°C when CS# is high. Data retention is guaranteed down to 2.0V VCC with controlled CS# assertion, supporting battery backup applications where supply voltage may sag during sleep.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size256 Kbit (32,768 × 8-bit) - supports full byte-accessed storage for firmware buffers or real-time data logging without external width expansion.
Access time55 ns - enables direct interface with 18 MHz microcontrollers without wait states in standard bus cycles.
Supply voltage2.7 V to 3.6 V - compatible with single-cell Li-ion or regulated 3.3 V rails, eliminating level-shifting in portable designs.
Standby current0.6 µA typical at 3.0 V, +25°C - extends battery life to years in always-on monitoring nodes with infrequent wake-ups.
Data retention VCC2.0 V minimum - maintains stored configuration or calibration data during brown-out or backup battery discharge.
I/O compatibilityTTL input thresholds (VIH = 2.0 V, VIL = 0.6 V) and output drive (VOH = 2.4 V @ –0.5 mA) - ensures interoperability with legacy 3.3 V logic families.
Package28-pin TSOP (8 mm × 13.4 mm) - surface-mount footprint optimized for space-constrained PCBs in handheld and edge-sensor modules.

Pinout & Package

28-pin plastic TSOP (Thin Small Outline Package), 8 mm × 13.4 mm body, 0.55 mm pitch, JEDEC MO-153 compliant.

Pin/Terminal Circuit Role Design Meaning
VccPower supplyPrimary 2.7–3.6 V supply rail; decoupling capacitor required within 5 mm for stable read/write timing.
Vss (GND)Ground referenceCommon return path for all signals; must be connected to low-impedance system ground plane.
A0–A14Address inputs15-bit address bus accepting 0x0000–0x7FFF; latched on CS#/WE# transitions, no internal address register.
DQ0–DQ7Bi-directional data I/OShared 8-bit data bus with three-state control via OE# and CS#; supports OR-tie for memory expansion.
CS#Chip select (active low)Enables device operation; high state forces all outputs to high-Z and reduces current to standby level.
WE#Write enable (active low)Controls write cycle initiation; low with CS# low writes data from DQ bus into addressed location.
OE#Output enable (active low)Gates read data onto DQ lines; prevents bus contention when multiple devices share same data bus.

Key Features

Feature Design Value
No refresh requiredEliminates external refresh circuitry or software overhead-ideal for simple MCU-based systems with limited processing resources.
Low-voltage data retentionMaintains valid data at VCC ≥ 2.0 V with CS# asserted, enabling reliable operation during battery voltage decay in backup mode.
OR-tie capabilityThree-state outputs allow parallel connection of multiple R1LV5256ESA-5SI#S0 devices on shared data bus without external logic.
TTL-compatible signalingDirect interface with 3.3 V microcontrollers and FPGAs without level translators-reduces BOM count and layout complexity.
Small stand-by current0.6 µA typical at +25°C minimizes quiescent drain in always-on sensor nodes, extending shelf life and field deployment duration.

Applications

Portable Medical Sensors Industrial PLC I/O Modules

Use Scenario: Battery-powered ECG patch continuously logs waveform data during patient ambulation, entering deep sleep between transmissions.

IC Role / Device Role / Timing Role: Non-volatile buffer storing 30 seconds of raw analog samples before wireless upload; retains data during 3.0 V → 2.2 V battery sag.

Use Value: 0.6 µA standby current enables >2-year shelf life on coin cell; 55 ns access supports real-time sampling at 20 kSPS without CPU intervention.

Use Scenario: Modular PLC base unit stores configuration parameters and last-known I/O states across power cycles and firmware updates.

IC Role / Device Role / Timing Role: Fast-access configuration RAM holding IP settings, calibration offsets, and watchdog timeout values-read at boot and updated during commissioning.

Use Value: TTL compatibility allows direct connection to ARM Cortex-M4 GPIOs; 28-pin TSOP fits tight spacing in DIN-rail mounted enclosures.

Smart Meter Data Logging Automotive Body Control Units

Use Scenario: Electricity meter records kWh consumption every 15 minutes and retains 30 days of history during grid outages.

IC Role / Device Role / Timing Role: Backup memory preserving billing data during AC loss; powered by supercapacitor charged from mains.

Use Value: Data retention down to 2.0 V ensures integrity through full capacitor discharge; 32k × 8-bit capacity holds 960 hourly records with metadata.

Use Scenario: BCM stores door lock status, mirror position, and seat memory settings while vehicle is parked and main battery is disconnected.

IC Role / Device Role / Timing Role: Low-leakage SRAM retaining user preferences across ignition cycles using parasitic current from battery sense line.

Use Value: 8 µA max ISB at +85°C meets automotive thermal requirements; TSOP package withstands reflow and vibration per AEC-Q200 Class 2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-10TLI16-bit bus (256K × 16), 10 ns access, 3.3 V only, 32-pin TSOPHigher bandwidth but wider data path; requires PCB redesign for byte-to-word alignmentSelect if system uses 16-bit microcontroller bus and needs faster access; not drop-in for R1LV5256ESA-5SI#S0.
AS6C4008-55TINSame 32k × 8-bit, 55 ns, 2.7–3.6 V, 28-pin TSOP-but 2 µA typical ISB, no low-VCC retention specLower cost but lacks guaranteed 2.0 V data retention; unsuitable for critical backup scenariosAcceptable for non-critical buffering where battery backup is not required; verify retention behavior per unit.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the R1LV5256ESA-5SI#S0 uniquely balances ultra-low standby current, validated 2.0 V data retention, and pin-compatible 28-pin TSOP packaging-making it optimal for space- and power-constrained embedded systems requiring robust non-refresh memory.

Availability

R1LV5256ESA-5SI#S0 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, and smart meter data logging requiring stable component supply, long-lifecycle support, and consistent TSOP packaging across production batches.

Supply support for R1LV5256ESA-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The R1LV5256E Series was developed specifically for low-voltage, low-power memory applications in battery-operated and backup-critical systems-emphasizing simplicity, reliability, and minimal external component count.

FAQ

What is the maximum operating temperature range for the R1LV5256ESA-5SI#S0?

The R1LV5256ESA-5SI#S0 is rated for continuous operation from –40°C to +85°C ambient temperature. This industrial-grade range is validated across all DC and AC specifications-including access time, standby current, and data retention-ensuring reliable performance in factory automation, outdoor metering, and vehicle-mounted electronics where thermal cycling occurs.

Does the R1LV5256ESA-5SI#S0 require an external clock or refresh signal?

No, the R1LV5256ESA-5SI#S0 is a true static RAM and requires neither an external clock nor periodic refresh cycles. Its CMOS latch-based memory cells retain data as long as power is applied and CS# remains low during access. This eliminates timing-critical controller overhead and simplifies firmware design for resource-constrained MCUs.

Can the R1LV5256ESA-5SI#S0 retain data when VCC drops below 2.7 V?

Yes-the R1LV5256ESA-5SI#S0 guarantees data retention down to 2.0 V VCC when CS# is held high (deselected). At +25°C, typical retention current is 0.6 µA, rising to 10 µA at +85°C. This feature enables use with backup capacitors or primary batteries that discharge below nominal voltage without data loss.

What is the function of the OE# pin on the R1LV5256ESA-5SI#S0?

The OE# (output enable) pin on the R1LV5256ESA-5SI#S0 controls three-state output drivers on the DQ0–DQ7 bus. When OE# is low and CS# is low, valid read data appears on DQ pins. When OE# is high, outputs enter high-impedance state-even during active CS#, preventing bus contention in multi-device systems sharing the same data lines.

Is the R1LV5256ESA-5SI#S0 pin-compatible with other 28-pin TSOP SRAMs like the AS6C4008?

The R1LV5256ESA-5SI#S0 shares identical 28-pin TSOP mechanical dimensions and pinout with the AS6C4008-55TIN (address, data, control, and power pins match one-to-one). However, differences in timing margins and low-voltage retention behavior mean functional equivalence must be confirmed per application-no guarantee of drop-in replacement without validation.

R1LV5256ESA-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-TSSOP (0.465", 11.80mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-TSOP I

R1LV5256ESA-5SI#S0 FAQ

1.How can I place an order for R1LV5256ESA-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV5256ESA-5SI#S0 reliable?

The price and inventory of R1LV5256ESA-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV5256ESA-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV5256ESA-5SI#S0?

R1LV5256ESA-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV5256ESA-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV5256ESA-5SI#S0?

For technical support, including R1LV5256ESA-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SI#S0 requirements.

6.How does Aetrix verify that R1LV5256ESA-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV5256ESA-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV5256ESA-5SI#S0?

All R1LV5256ESA-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV5256ESA-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV5256ESA-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV5256ESA-5SI#S0 Tags

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