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Renesas R1LV5256ESA-5SI#S1
- Part No.:
- R1LV5256ESA-5SI#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV5256ESA-5SI#S1.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,865
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Product details
Overview
R1LV5256ESA-5SI#S1 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin TSOP package, operating from 2.7V to 3.6V with 55 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O - deployed in battery-backed memory subsystems for industrial controllers and portable instrumentation.
For engineers reviewing the R1LV5256ESA-5SI#S1 datasheet, R1LV5256ESA-5SI#S1 pinout, R1LV5256ESA-5SI#S1 application, or R1LV5256ESA-5SI#S1 equivalent, key selection criteria include low-voltage data retention down to 2.0V, no-refresh operation, chip-select expandability, three-state OR-tie capable outputs, and -40°C to +85°C industrial temperature support.
Technical Context
The R1LV5256ESA-5SI#S1 implements a fully static CMOS memory array with asynchronous parallel interface, no internal clocks or refresh circuitry, and address/data multiplexing eliminated by dedicated A0–A14 and DQ0–DQ7 lines. Its control logic relies solely on CS#, WE#, and OE# active-low signals to manage read/write cycles and output tri-state behavior.
It supports two distinct write modes (WE#-clocked and CS#-clocked), guarantees data retention at Vcc ≥ 2.0V with CS# high, and maintains <1 µA input/output leakage across full temperature range - enabling direct integration into low-power, battery-operated systems requiring nonvolatile backup without external controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 words × 8 bits) - fixed parallel organization, no address multiplexing required |
| Access time | 55 ns - defines minimum cycle time for reliable read/write in high-speed microcontroller interfaces |
| Supply voltage | 2.7 V to 3.6 V - compatible with 3.3V logic domains and battery-sourced rails down to 2.7V |
| Standby current | 0.6 µA typical at 3.0V/25°C - enables multi-year battery life in always-on backup mode |
| Data retention VCC | 2.0 V minimum - preserves stored data during brown-out or battery depletion events |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade embedded control and telemetry applications |
| I/O compatibility | TTL-level inputs and outputs - interoperable with legacy 3.3V microcontrollers and FPGAs without level shifters |
Pinout & Package
Package: 28-pin TSOP (8 mm × 13.4 mm, Type II, 0.55 mm pitch), surface-mount, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling capacitor required within 10 mm |
| Vss (GND) | Ground reference | Common return path for all digital and I/O circuits; must be low-impedance |
| A0–A14 | Address inputs | 15-bit unidirectional address bus selecting one of 32,768 memory locations |
| DQ0–DQ7 | Bi-directional data I/O | 8-bit common bus for read data output or write data input; three-state controlled by CS#/OE# |
| CS# | Chip select | Active-low enable for device selection; high state forces standby mode and data retention |
| WE# | Write enable | Active-low signal initiating write cycle; combined with CS# to define write window timing |
| OE# | Output enable | Active-low control for output buffer; prevents bus contention when multiple devices share DQ lines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates need for external refresh controller or periodic CPU intervention - reduces firmware overhead and power spikes |
| Low standby current | 0.6 µA typical at 3.0V enables >10-year battery backup in SRAM-based real-time clock or configuration storage |
| OR-tie capability | Three-state outputs allow wired-OR connection of multiple R1LV5256ESA-5SI#S1 devices on shared data bus without external logic |
| Easy memory expansion | CS#-based chip selection supports daisy-chained or decoded addressing for multi-SRAM systems up to 1 Mbyte |
| 2.0V data retention | Maintains valid data with Vcc as low as 2.0V while CS# remains asserted - critical for graceful shutdown in power-loss scenarios |
Applications
| Industrial PLC Data Buffer | Portable Medical Device Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings and control states in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Non-refreshing, battery-backed SRAM storing volatile process variables and fault history without CPU supervision. Use Value: Guarantees data integrity during brown-out events via 2.0V retention voltage and sub-µA standby draw - extends backup battery life beyond 5 years. |
Use Scenario: Storing calibration coefficients and patient session data in handheld ECG monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-voltage static RAM interfacing directly with 3.3V ARM Cortex-M0+ MCU via parallel bus. Use Value: 55 ns access time enables real-time waveform buffering; 0.6 µA standby current allows >3-year shelf life with primary battery installed. |
| Smart Meter Configuration Storage | Automotive Body Control Module |
Use Scenario: Holding tariff schedules, metering registers, and communication settings in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Industrial-temperature SRAM retaining configuration across repeated power cycles and thermal stress. Use Value: -40°C to +85°C rating ensures reliability in outdoor enclosures; TTL compatibility avoids level-shifter components in cost-sensitive BOMs. |
Use Scenario: Caching door lock status, mirror position, and lighting profiles in vehicle body control units with intermittent power. IC Role / Device Role / Timing Role: Parallel-interface SRAM providing fast read/write for frequently updated user preferences and diagnostics. Use Value: OR-tie capability allows stacking multiple R1LV5256ESA-5SI#S1 units on same data bus - simplifies memory expansion without address decoding logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3V only, 44-pin TSOP | Higher density and speed but wider bus and incompatible pinout; requires PCB redesign | Select only if system demands >32K × 8 capacity or sub-55 ns timing - not drop-in compatible with R1LV5256ESA-5SI#S1 |
| AS6C4008-55TIN | 8-bit bus, 55 ns access, 2.7–3.6V, 28-pin SOP (not TSOP), 2 µA standby typical | Same logic interface but different package footprint; higher standby current reduces battery lifetime | Acceptable for space-constrained designs where SOP fits layout - verify thermal derating at +85°C due to lower power dissipation margin |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the R1LV5256ESA-5SI#S1 uniquely balances 28-pin TSOP compactness, industry-leading 0.6 µA standby, and guaranteed 2.0V data retention - making it optimal for battery-critical, thermally demanding, and layout-sensitive industrial edge nodes.
Availability
R1LV5256ESA-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLC data buffers, portable medical device memory, and smart meter configuration storage requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.
Supply support for R1LV5256ESA-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV5256E Series was designed specifically for ultra-low-power, battery-backed memory applications where zero-refresh operation, wide Vcc tolerance, and industrial temperature resilience are mandatory - targeting portable instrumentation, energy metering, and embedded control systems.
FAQ
What is the maximum operating frequency supported by the R1LV5256ESA-5SI#S1?
The R1LV5256ESA-5SI#S1 does not operate on a clock signal - it is an asynchronous static RAM. Its timing is governed by access and cycle times: 55 ns maximum address access time (tAA) and 55 ns read/write cycle time (tRC/tWC). System timing depends on controlling MCU or FPGA setup/hold margins relative to these parameters, not a clock frequency.
Can the R1LV5256ESA-5SI#S1 retain data when Vcc drops below 2.7V?
Yes - the R1LV5256ESA-5SI#S1 guarantees data retention down to 2.0V, provided CS# remains high (≥ Vcc − 0.2V) and ambient temperature does not exceed +85°C. At 2.0V and 25°C, typical retention current is 0.6 µA, enabling multi-year backup with standard lithium coin cells.
Is the R1LV5256ESA-5SI#S1 pin-compatible with the R1LV5256ESP-5SI#S1?
No - the R1LV5256ESA-5SI#S1 uses a 28-pin TSOP package, while the R1LV5256ESP-5SI#S1 uses a 28-pin SOP package. Although both share identical pin functions and electrical specifications, their physical footprints, solder pad layouts, and mechanical dimensions differ significantly and are not interchangeable without PCB revision.
Does the R1LV5256ESA-5SI#S1 require external refresh circuitry?
No - the R1LV5256ESA-5SI#S1 is a true static RAM with no refresh requirement. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and CS# is held high during standby. This eliminates refresh overhead, timing constraints, and associated firmware complexity found in DRAM or pseudo-SRAM solutions.
What is the meaning of "#S1" in the R1LV5256ESA-5SI#S1 part number?
The "#S1" suffix in R1LV5256ESA-5SI#S1 denotes embossed tape packaging (8 mm carrier tape, 13.4 mm pocket width) per JEDEC standard, with "S1" indicating a specific assembly site revision code. It does not affect electrical or functional characteristics - the R1LV5256ESA-5SI#S1 performs identically to R1LV5256ESA-5SI#S0 or R1LV5256ESA-5SI#B* variants.
R1LV5256ESA-5SI#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LV5256ESA-5SI#S1 FAQ
1.How can I place an order for R1LV5256ESA-5SI#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESA-5SI#S1 reliable?
The price and inventory of R1LV5256ESA-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SI#S1 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESA-5SI#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SI#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESA-5SI#S1?
R1LV5256ESA-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESA-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESA-5SI#S1?
For technical support, including R1LV5256ESA-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SI#S1 requirements.
6.How does Aetrix verify that R1LV5256ESA-5SI#S1 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESA-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SI#S1 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESA-5SI#S1?
All R1LV5256ESA-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SI#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESA-5SI#S1 part is unused and in its original packaging.
Return procedure for R1LV5256ESA-5SI#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV5256ESA-5SI#S1 Tags
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