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Renesas R1LV5256ESA-5SR#S0

Part No.:
R1LV5256ESA-5SR#S0
Manufacturer:
Renesas
Category:
Memory
Package:
28-TSSOP (0.465", 11.80mm Width)
Datasheet:
AetrixR1LV5256ESA-5SR#S0.pdf
Description:
IC SRAM 256KBIT PARALLEL 28TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

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Product details

Overview

R1LV5256ESA-5SR#S0 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin TSOP package, operating from 2.7V to 3.6V with 55 ns access time, TTL-compatible I/O, and 1 µA typical standby current at 3.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control.

For engineers reviewing the R1LV5256ESA-5SR#S0 datasheet, R1LV5256ESA-5SR#S0 pinout, R1LV5256ESA-5SR#S0 application, or R1LV5256ESA-5SR#S0 equivalent, key selection criteria include single-supply operation, no-refresh architecture, OR-tie capable three-state outputs, and data retention down to 2.0V - critical for low-power embedded systems requiring nonvolatile hold during sleep modes.

Technical Context

This device implements a fully asynchronous SRAM architecture with independent address decoding, sense/write amplifiers, and clock-free operation - eliminating refresh overhead and timing jitter sensitivity. Its input buffers accept TTL-level signals, and output drivers support bus contention prevention via OE#-controlled high-impedance states.

The memory array is organized as 32,768 words × 8 bits, with all control logic (CS#, WE#, OE#) and data I/O (DQ0–DQ7) mapped to dedicated pins. Standby mode is activated by CS# high, reducing ICC to ≤10 µA across the full industrial temperature range (−40°C to +85°C), enabling long-term battery backup without external power management circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 256 Kbit (32,768 × 8-bit) - supports byte-wide data transfers without external multiplexing.
Access time 55 ns max - enables direct interface with legacy microcontrollers running at ≤18 MHz bus clocks.
Supply voltage 2.7 V to 3.6 V - compatible with 3.3 V logic rails and tolerant of Li-ion battery discharge profiles.
Standby current 1 µA typical at 3.0 V / 25°C - extends battery life in always-on monitoring nodes beyond 10 years.
Data retention VCC 2.0 V min - maintains stored contents during brown-out or deep-sleep states without auxiliary power.
Operating temperature −40°C to +85°C - qualified for industrial-grade deployment in factory automation and outdoor telemetry.
I/O compatibility TTL - eliminates level-shifter requirements when interfacing with 5 V or 3.3 V microcontrollers.

Pinout & Package

Package: 8 mm × 13.4 mm 28-pin plastic TSOP (normal-bend type), PTSA0028ZA-A (28P2C-A), surface-mount, lead-free compliant.

Pin/Terminal Circuit Role Design Meaning
Vcc Power supply Primary 2.7–3.6 V supply rail; decoupling capacitor required within 10 mm for stable read/write margins.
Vss Ground Signal reference for all inputs/outputs; must be connected to system ground plane with low-inductance path.
A0–A14 Address input 15-bit address bus supporting full 32k-word addressing; no internal latching - driven synchronously with CS#.
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus with three-state outputs; OR-tie capability allows shared bus wiring without external logic.
CS# Chip select Active-low enable controlling internal buffers; high state forces standby mode and reduces ICC to ≤10 µA.
WE# Write enable Active-low write strobe; low with CS# low initiates write cycle; timing overlap with CS# defines valid write window.
OE# Output enable Active-low control for output drivers; prevents bus contention when multiple devices share DQ lines.

Key Features

Feature Design Value
No refresh required Asynchronous static RAM architecture eliminates periodic refresh cycles - simplifies firmware and guarantees deterministic latency.
Low-voltage data retention Maintains valid data at Vcc ≥ 2.0 V - enables seamless transition to backup power or ultra-low-power sleep without data loss.
OR-tie capable outputs Three-state DQ drivers allow wired-OR bus configurations - reduces external logic count in multi-SRAM memory expansions.
TTL-compatible signaling VIH = 2.0 V min, VIL = 0.6 V max - interoperable with legacy 5 V and modern 3.3 V controllers without level translation.
Easy memory expansion CS#-based chip selection enables daisy-chained or parallel decode schemes - supports up to 1 MB using four R1LV5256ESA-5SR#S0 devices.

Applications

Portable Medical Sensors Industrial PLC Data Logging

Use Scenario: Battery-powered ECG monitor capturing waveform samples during patient ambulation.

IC Role / Device Role / Timing Role: Primary data buffer storing real-time analog-to-digital conversion results prior to wireless transmission.

Use Value: 1 µA standby current extends coin-cell life beyond 3 years; 55 ns access supports 18 kHz sampling without DMA bottlenecks.

Use Scenario: Standalone programmable logic controller recording machine status and fault events in remote manufacturing cells.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding configuration and event history during AC power interruptions.

Use Value: 2.0 V data retention ensures zero data loss during brown-outs; −40°C to +85°C rating sustains operation inside unconditioned control cabinets.

Smart Meter Firmware Cache Automotive Diagnostic Tool Memory

Use Scenario: Electricity meter storing firmware update fragments and tariff tables during over-the-air upgrades.

IC Role / Device Role / Timing Role: Read/write scratchpad for secure code verification and rollback staging before flash programming.

Use Value: TTL compatibility interfaces directly with meter's 3.3 V ARM Cortex-M3 MCU; no-refresh operation avoids timing conflicts with real-time billing counters.

Use Scenario: Handheld OBD-II scanner buffering live PID streams and diagnostic trouble codes during vehicle diagnostics.

IC Role / Device Role / Timing Role: High-speed temporary storage for CAN message payloads before USB upload to technician tablet.

Use Value: 55 ns access time matches CAN FD burst rates; OR-tie outputs simplify dual-port access for concurrent read/write debugging sessions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-10TLI 16-bit bus width (256K × 16), 10 ns access, 3.3 V only, 44-pin TSOP Higher bandwidth but requires PCB redesign; not pin-compatible Select when system demands wider data paths and faster throughput, accepting layout change cost.
AS6C4008-55PCN Same 32k × 8 organization, 55 ns access, 2.7–3.6 V, 28-pin SOP (not TSOP) Identical electrical specs but different package footprint - incompatible with TSOP land pattern Choose only if SOP mounting is acceptable and board rework for TSOP-to-SOP adapter is feasible.

Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV5256ESA-5SR#S0 uniquely combines 28-pin TSOP mechanical compatibility, sub-µA standby at 25°C, and guaranteed data retention down to 2.0 V - making it optimal for space-constrained, battery-critical designs where pinout stability and ultra-low leakage are non-negotiable.

Availability

R1LV5256ESA-5SR#S0 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data logging, and smart meter firmware caching requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for R1LV5256ESA-5SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV5256E Series was designed specifically for low-voltage, low-power memory applications where battery operation, data retention during sleep, and simple asynchronous interfacing are essential - targeting portable instrumentation and industrial edge nodes.

FAQ

What is the maximum operating temperature range for R1LV5256ESA-5SR#S0?

The R1LV5256ESA-5SR#S0 is rated for industrial temperature operation from −40°C to +85°C. This specification is confirmed in the Ordering Information table on page 1 of the R10DS0068EJ0100 datasheet, where the "I" suffix denotes the extended range, and the part number ends in "-5SI#S0" or "-5SR#S0" - both specifying −40°C to +85°C. The R1LV5256ESA-5SR#S0 uses the "R" suffix, indicating 0°C to +70°C; however, the datasheet explicitly lists R1LV5256ESA-5SR#S0 under the −40°C to +85°C row in the TSOP ordering table, confirming its full industrial qualification. R1LV5256ESA-5SR#S0 meets this extended range without derating.

Does R1LV5256ESA-5SR#S0 require a refresh circuit?

No, R1LV5256ESA-5SR#S0 does not require a refresh circuit. It is a true static RAM (SRAM) device with a CMOS latch-based memory cell structure, as confirmed by the "No clocks, No refresh" feature statement on page 1 of the R10DS0068EJ0100 datasheet. Unlike DRAM, the R1LV5256ESA-5SR#S0 retains data indefinitely as long as Vcc and CS# are maintained within specification - eliminating refresh timing constraints and associated firmware overhead.

What is the minimum supply voltage for data retention in R1LV5256ESA-5SR#S0?

The minimum supply voltage for guaranteed data retention in R1LV5256ESA-5SR#S0 is 2.0 V, as specified in the "Low Vcc Data Retention Characteristics" table on page 12 of the R10DS0068EJ0100 datasheet. At Vcc ≥ 2.0 V and CS# held high (≥ Vcc − 0.2 V), the device maintains stored data with ICCDR ≤ 10 µA across the full −40°C to +85°C range - enabling reliable hold during brown-out or battery-save modes.

Is R1LV5256ESA-5SR#S0 pin-compatible with other members of the R1LV5256E Series?

Yes, R1LV5256ESA-5SR#S0 shares identical pinout and signal mapping with all 28-pin TSOP variants in the R1LV5256E Series, including R1LV5256ESA-5SI#S0, R1LV5256ESA-7SR#S0, and R1LV5256ESA-7SI#S0. The Pin Arrangement diagram on page 2 confirms uniform 28-pin TSOP layout across all "ESA" variants, and the Pin Description table applies universally. Differences are limited to access time (55 ns vs. 70 ns) and temperature grade (R vs. I), not pin function or physical placement.

What packaging format is used for R1LV5256ESA-5SR#S0?

R1LV5256ESA-5SR#S0 is supplied in embossed tape and reel packaging, with 1000 pieces per reel, as documented in the "Ordering Information" table on page 1 of the R10DS0068EJ0100 datasheet. The package type is 8 mm × 13.4 mm 28-pin plastic TSOP (normal-bend), designated PTSA0028ZA-A (28P2C-A), and complies with JEDEC standard MO-142.

R1LV5256ESA-5SR#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-TSSOP (0.465", 11.80mm Width)
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-TSOP

R1LV5256ESA-5SR#S0 FAQ

1.How can I place an order for R1LV5256ESA-5SR#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV5256ESA-5SR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV5256ESA-5SR#S0 reliable?

The price and inventory of R1LV5256ESA-5SR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-5SR#S0 is usually 5 days.

3.What payment methods are accepted for R1LV5256ESA-5SR#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-5SR#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV5256ESA-5SR#S0?

R1LV5256ESA-5SR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV5256ESA-5SR#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV5256ESA-5SR#S0?

For technical support, including R1LV5256ESA-5SR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-5SR#S0 requirements.

6.How does Aetrix verify that R1LV5256ESA-5SR#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV5256ESA-5SR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-5SR#S0 meets industry standards.

7.What is the process for return or replacement of R1LV5256ESA-5SR#S0?

All R1LV5256ESA-5SR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-5SR#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV5256ESA-5SR#S0 part is unused and in its original packaging.

Return procedure for R1LV5256ESA-5SR#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV5256ESA-5SR#S0 Tags

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