Renesas R1LV5256ESA-7SR#S0
- Part No.:
- R1LV5256ESA-7SR#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV5256ESA-7SR#S0.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
R1LV5256ESA-7SR#S0 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating from a single 2.7V–3.6V supply, with 70 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O - deployed in battery-backed memory subsystems for industrial controllers and portable instrumentation.
For engineers reviewing the R1LV5256ESA-7SR#S0 datasheet, R1LV5256ESA-7SR#S0 pinout, R1LV5256ESA-7SR#S0 application, or R1LV5256ESA-7SR#S0 equivalent, key selection criteria include low-voltage data retention down to 2.0V, no-refresh operation, chip-select expandability, three-state OR-tie capable outputs, and TSOP-28 packaging compatibility with space-constrained PCB layouts.
Technical Context
The R1LV5256ESA-7SR#S0 implements a fully static CMOS memory array with asynchronous parallel interface logic, supporting independent read/write cycles via CS#, WE#, and OE# control signals. Its architecture eliminates refresh circuitry and clock dependencies, enabling deterministic timing across temperature (–40°C to +85°C) and voltage (2.7V–3.6V).
All address (A0–A14), data (DQ0–DQ7), and control (CS#, WE#, OE#) pins are TTL-compatible with VIH ≥ 2.0V and VIL ≤ 0.6V. Standby mode is activated by high CS#, reducing ICC to ≤0.33 mA (max) and ISB1 to 0.6 µA (typ) at 25°C - critical for long-term battery retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32k × 8-bit); supports byte-wide data bus without external demultiplexing |
| Access time | 70 ns max; ensures compatibility with 10–14 MHz microcontroller bus timing |
| Supply voltage | 2.7V–3.6V single rail; enables direct connection to 3.3V logic domains without level shifters |
| Standby current | 0.6 µA typical at 3.0V/25°C; extends battery life in always-on backup memory applications |
| Data retention VCC | 2.0V min; maintains stored data during brown-out or sleep-mode power reduction |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade embedded systems without derating |
| I/O compatibility | TTL input thresholds (VIH ≥ 2.0V, VIL ≤ 0.6V) and output drive (VOH ≥ 2.4V @ –0.5mA) |
Pinout & Package
Package: 28-pin TSOP (8mm × 13.4mm, Type II, 0.55mm pitch), RoHS-compliant plastic body with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; requires local 0.1 µF decoupling |
| Vss (GND) | Ground reference | Signal and power return path; must be low-impedance to minimize noise coupling |
| A0–A14 | Address inputs | 15-bit address bus supporting full 32k-word decoding; no internal latching |
| DQ0–DQ7 | Bidirectional data I/O | Three-state CMOS drivers enable bus sharing; OR-tie capability simplifies wired-OR expansion |
| CS# | Chip select (active-low) | Enables memory access; high state forces all outputs to high-Z and minimizes current draw |
| WE# | Write enable (active-low) | Controls write cycle initiation; low with CS# low initiates data latch into memory array |
| OE# | Output enable (active-low) | Gates output drivers; prevents bus contention when multiple devices share DQ lines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead; reduces firmware complexity and power spikes |
| Low-voltage data retention | Maintains valid data at Vcc ≥ 2.0V, enabling seamless transition to backup battery or capacitor hold-up |
| Easy memory expansion | CS#-based chip selection allows daisy-chained or decoded multi-chip configurations without glue logic |
| Three-state OR-tie outputs | Permits direct wire-OR of DQ lines across multiple R1LV5256ESA-7SR#S0 devices for wider data buses |
| TTL-compatible signaling | Direct interfacing with legacy 3.3V microcontrollers, FPGAs, and ASICs without level translation |
Applications
| Industrial PLC Data Logging | Portable Medical Instrument Memory |
|---|---|
|
Use Scenario: Non-volatile storage of calibration coefficients and real-time sensor history in battery-powered handheld analyzers. IC Role / Device Role / Timing Role: Primary SRAM buffer holding volatile measurement data during acquisition and transfer. Use Value: 0.6 µA standby current and 2.0V data retention extend battery life beyond 5 years in sleep mode. |
Use Scenario: Temporary waveform capture and processing buffer in ECG or pulse oximeter units with intermittent USB host upload. IC Role / Device Role / Timing Role: Asynchronous parallel memory interfaced directly to ARM Cortex-M4 DMA controller. Use Value: 70 ns access time meets real-time sampling deadlines; TSOP-28 footprint fits compact 4-layer PCBs. |
| Smart Meter Firmware Cache | Automotive Body Control Module |
|
Use Scenario: Storing decrypted firmware segments during secure boot and OTA update staging in utility meters. IC Role / Device Role / Timing Role: Secure, low-leakage working memory isolated from main MCU during cryptographic operations. Use Value: No-refresh operation prevents timing side-channel leakage; -40°C to +85°C rating ensures field reliability. |
Use Scenario: Retaining door lock status, window position, and lighting configuration during ignition-off periods. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving volatile settings across vehicle sleep/wake cycles. Use Value: 2.0V data retention threshold aligns with automotive battery droop profiles (e.g., 2.2V minimum during cranking). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (128k word × 16-bit), 10 ns faster access (60 ns), 3.3V only, larger 44-pin TSOP-II package | Requires bus-width adaptation and PCB redesign; higher speed suits FPGA co-processor buffers | Select when wider data path and sub-65 ns timing outweigh footprint and voltage flexibility constraints |
| AS6C4008-70TIN | Same 32k × 8-bit organization, 70 ns access, but 2.7–5.5V supply range and 2 µA standby (typ) at 3.0V | Higher standby current limits battery lifetime; broader Vcc supports mixed-voltage legacy designs | Prefer when system already uses 5V peripherals or requires backward compatibility with older 5V logic rails |
Compared with IS61LV25616AL-10TLI and AS6C4008-70TIN, the R1LV5256ESA-7SR#S0 delivers optimal balance of ultra-low standby current, 2.0V data retention, and drop-in TSOP-28 compatibility for new 3.3V industrial designs - without forcing bus-width changes or sacrificing battery runtime.
Availability
R1LV5256ESA-7SR#S0 is available at Aetrix Electronics and suitable for industrial PLC data logging, portable medical instrumentation, smart meter firmware caching, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for R1LV5256ESA-7SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV5256E Series was designed specifically for low-voltage, battery-sensitive memory applications where zero-refresh operation, minimal standby current, and robust data retention under brown-out conditions are mandatory design requirements.
FAQ
What is the maximum access time specification for R1LV5256ESA-7SR#S0?
The R1LV5256ESA-7SR#S0 has a maximum access time of 70 ns, measured as tAA (address access time) and tACS (chip select access time) under standard test conditions (Vcc = 2.7V–3.6V, Ta = –40°C to +85°C). This value ensures reliable interfacing with microcontrollers running up to ~12 MHz bus clocks without wait states.
Does R1LV5256ESA-7SR#S0 require a refresh circuit or clock signal?
No, the R1LV5256ESA-7SR#S0 is a fully static RAM and requires no refresh circuitry or external clock. Its CMOS memory cell design retains data indefinitely as long as power is applied and CS# remains asserted, eliminating timing-critical refresh overhead in firmware or hardware.
What is the lowest supply voltage at which R1LV5256ESA-7SR#S0 retains stored data?
The R1LV5256ESA-7SR#S0 guarantees data retention down to Vcc = 2.0V, provided CS# is held high (≥ Vcc – 0.2V) and ambient temperature remains within specification. This enables reliable operation during battery voltage sag or capacitor-based hold-up in backup power scenarios.
Can multiple R1LV5256ESA-7SR#S0 devices share the same DQ bus?
Yes - the R1LV5256ESA-7SR#S0 features three-state outputs with OR-tie capability. When OE# is controlled per device and CS# is managed to avoid simultaneous enable, multiple R1LV5256ESA-7SR#S0 units can safely share a common 8-bit data bus without external bus transceivers.
Is R1LV5256ESA-7SR#S0 compatible with 5V TTL logic interfaces?
No - the R1LV5256ESA-7SR#S0 operates strictly from 2.7V–3.6V and specifies TTL-compatible voltage thresholds (VIH ≥ 2.0V, VIL ≤ 0.6V) for 3.3V systems. Direct connection to 5V logic may exceed absolute maximum input voltage (Vcc + 0.3V), risking damage; level translation is required for 5V interfaces.
R1LV5256ESA-7SR#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
R1LV5256ESA-7SR#S0 FAQ
1.How can I place an order for R1LV5256ESA-7SR#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESA-7SR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESA-7SR#S0 reliable?
The price and inventory of R1LV5256ESA-7SR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESA-7SR#S0 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESA-7SR#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESA-7SR#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESA-7SR#S0?
R1LV5256ESA-7SR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESA-7SR#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESA-7SR#S0?
For technical support, including R1LV5256ESA-7SR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESA-7SR#S0 requirements.
6.How does Aetrix verify that R1LV5256ESA-7SR#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESA-7SR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESA-7SR#S0 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESA-7SR#S0?
All R1LV5256ESA-7SR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESA-7SR#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESA-7SR#S0 part is unused and in its original packaging.
Return procedure for R1LV5256ESA-7SR#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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