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Renesas R1LV5256ESP-5SI#B1
- Part No.:
- R1LV5256ESP-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-SOIC (0.330", 8.40mm Width)
- Datasheet:
-
R1LV5256ESP-5SI#B1.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOP
- Quantity:
- Payment:
- Shipping:
Inventory:514
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Product details
Overview
R1LV5256ESP-5SI#B1 from Renesas Electronics is a 256Kb low-power static RAM organized as 32,768 × 8-bit, operating from a single 2.7V–3.6V supply with 55 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O-designed for battery-backed memory systems in portable instrumentation and industrial controllers.
For engineers reviewing the R1LV5256ESP-5SI#B1 datasheet, R1LV5256ESP-5SI#B1 pinout, R1LV5256ESP-5SI#B1 application, or R1LV5256ESP-5SI#B1 equivalent, key selection criteria include low-voltage data retention down to 2.0V, no-refresh operation, three-state OR-tie capable outputs, and SOP-28 packaging for space-constrained embedded designs.
Technical Context
The R1LV5256ESP-5SI#B1 implements a fully static CMOS memory architecture with asynchronous parallel interface, no internal clocks or refresh circuitry, and independent chip select (CS#), write enable (WE#), and output enable (OE#) controls enabling flexible memory expansion and bus sharing. Its address decoder supports full 15-bit addressing (A0–A14) for 32k-word access.
It features TTL-compatible input thresholds (VIH ≥ 2.0V, VIL ≤ 0.6V), guaranteed read/write timing across -40°C to +85°C, and low-voltage data retention mode activated by high CS# while Vcc ≥ 2.0V-enabling reliable backup operation during brownout or sleep states without external support circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 × 8-bit) - provides byte-wide storage for firmware buffers or real-time data logging in microcontroller-based systems. |
| Access time | 55 ns - ensures compatibility with 18 MHz bus timing in legacy 8/16-bit MCU interfaces without wait states. |
| Supply voltage | 2.7V–3.6V - enables direct connection to 3.3V logic rails and seamless integration with Li-ion battery-powered systems. |
| Standby current | 0.6 µA typical at 3.0V/25°C - extends battery life in always-on monitoring devices for months without recharge. |
| Data retention Vcc | 2.0V minimum - maintains stored data during deep sleep or power-fail conditions without external backup capacitors. |
| Operating temperature | -40°C to +85°C - qualified for deployment in industrial control panels and automotive under-hood telemetry modules. |
| I/O compatibility | TTL - eliminates level-shifting requirements when interfacing with legacy 5V-tolerant MCUs or FPGAs. |
Pinout & Package
Package: 28-pin plastic SOP (450-mil width), surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling capacitor required within 10 mm for stable read/write operation. |
| Vss (GND) | Ground reference | Common return path for all signals and power; must be connected to system ground plane with low-inductance trace. |
| A0–A14 | Address inputs | 15-bit parallel address bus supporting full 32k-word decoding; driven by MCU address lines A0–A14. |
| DQ0–DQ7 | Bi-directional data I/O | 8-bit shared data bus; high-impedance when CS# = high or OE# = high, enabling multi-device bus sharing. |
| CS# | Chip select (active-low) | Enables device operation; high state places RAM in ultra-low-power standby (<1 µA) and disables all outputs. |
| WE# | Write enable (active-low) | Controls write cycle initiation; low during valid address/data setup per AC timing table (tWP ≥ 40 ns). |
| OE# | Output enable (active-low) | Gates read data onto DQ bus; prevents contention when multiple devices share same data lines. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates need for external refresh controller or periodic CPU intervention-reducing firmware overhead and system complexity. |
| Three-state outputs with OR-tie capability | Allows direct wire-OR connection of multiple R1LV5256ESP-5SI#B1 devices on a common data bus without external logic. |
| Low-voltage data retention | Maintains valid memory contents at Vcc ≥ 2.0V with CS# held high-supporting fail-safe operation during brownout or backup battery switchover. |
| TTL-compatible signaling | Interfaces directly with legacy 5V-tolerant microcontrollers and CPLDs without level translators or pull-up resistors. |
| Easy memory expansion | CS#-based chip selection enables straightforward banked memory architectures using address-line decoding (e.g., A15 for bank select). |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
Use Scenario: Continuous acquisition of ECG waveforms and patient vitals in handheld diagnostic units powered by coin-cell or Li-ion batteries. IC Role / Device Role / Timing Role: Non-volatile buffer memory holding real-time sensor data during intermittent wireless transmission bursts. Use Value: 0.6 µA standby current extends battery life beyond 6 months; 55 ns access supports 18 MHz sampling controller timing. | Use Scenario: Local buffering of machine status, sensor readings, and alarm history in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for deterministic scan-cycle data exchange between CPU and I/O modules. Use Value: -40°C to +85°C rating ensures operation in unconditioned control cabinets; no-refresh design avoids timing jitter in cyclic execution. |
| Automotive Telematics Black Box | Smart Energy Meter Firmware Cache |
Use Scenario: Crash-event data capture and pre-impact sensor logging in vehicle event data recorders (EDRs) with backup power. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical crash parameters when main power fails. Use Value: 2.0V data retention threshold allows sustained operation during 12V battery sag; SOP-28 footprint fits compact EDR PCB layouts. | Use Scenario: Storing firmware update payloads and cryptographic keys in utility-grade electricity meters with tamper-resistant housing. IC Role / Device Role / Timing Role: Secure, low-leakage memory segment isolated from main application processor during secure boot sequences. Use Value: Sub-µA standby current prevents measurable battery drain over 10-year meter lifetime; TTL I/O simplifies isolation barrier interface design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62157EV30LL-55ZSXI | 512Kb (64k×8), 55 ns access, 3.0V–3.6V supply, 1 µA max standby current | Higher density but wider voltage range; requires tighter layout for 32-pin SOIC package | Choose when >256Kb capacity is needed and board area permits larger SOIC footprint. |
| IS61LV25616AL-10TLI | 256Kb (16k×16), 10 ns access, 3.0V–3.6V, 2 µA standby current, 48-pin TSOP | Wider 16-bit bus and faster speed; higher power consumption and larger package | Prefer for high-throughput data acquisition where 16-bit parallelism and sub-10 ns latency outweigh power and size constraints. |
Compared with CY62157EV30LL-55ZSXI and IS61LV25616AL-10TLI, the R1LV5256ESP-5SI#B1 delivers optimal balance of ultra-low standby current, compact SOP-28 footprint, and proven reliability in battery-critical applications-making it preferred for space- and energy-constrained edge nodes where 256Kb × 8-bit configuration suffices.
Availability
R1LV5256ESP-5SI#B1 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and automotive telematics black boxes requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for R1LV5256ESP-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The R1LV5256E Series targets low-power, battery-operated memory applications-designed specifically for systems requiring simple parallel interface, zero-refresh operation, and extended data retention at reduced supply voltages.
FAQ
What is the maximum operating frequency supported by the R1LV5256ESP-5SI#B1?
The R1LV5256ESP-5SI#B1 does not use a clock signal and operates asynchronously. Its 55 ns access time corresponds to a maximum effective bus frequency of approximately 18 MHz when used with standard MCU wait-state logic. Timing compliance depends on meeting tRC, tAA, and tOE specifications-not clock rate-and is validated across -40°C to +85°C with Vcc = 2.7–3.6V.
Does the R1LV5256ESP-5SI#B1 require an external refresh controller?
No, the R1LV5256ESP-5SI#B1 is a true static RAM and requires no external refresh controller or periodic refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and CS# remains low during active use. This eliminates timing-critical refresh overhead in MCU firmware and simplifies system design.
Can the R1LV5256ESP-5SI#B1 retain data when Vcc drops below 2.7V?
Yes-the R1LV5256ESP-5SI#B1 supports data retention down to Vcc = 2.0V when CS# is held high, as confirmed in the Low Vcc Data Retention Characteristics table. At 25°C, typical retention current is 0.6 µA, rising to 10 µA at 85°C. This feature enables reliable operation during brownout, battery depletion, or controlled power-down sequences.
Is the R1LV5256ESP-5SI#B1 pin-compatible with other 28-pin SOP SRAMs like the AS6C4008 or HM62256?
No-while the R1LV5256ESP-5SI#B1 uses a standard 28-pin SOP footprint, its pinout differs from legacy 256Kb SRAMs. Specifically, A11/A9/A8/A13 placement and DQ pin ordering follow Renesas' optimized layout (see Page 2 Pin Arrangement). Direct replacement requires PCB redesign unless verified through schematic comparison and timing validation.
What is the meaning of the "#B1" suffix in R1LV5256ESP-5SI#B1?
The "#B1" suffix in R1LV5256ESP-5SI#B1 indicates the assembly site revision code per Renesas' ordering nomenclature (R10DS0269EJ0200 Rev.2.00, Note 1). It reflects manufacturing location and process iteration-not functional or parametric change. All R1LV5256ESP-5SI#B* variants share identical electrical specifications, timing, and reliability characteristics.
R1LV5256ESP-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-SOIC (0.330", 8.40mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOP
R1LV5256ESP-5SI#B1 FAQ
1.How can I place an order for R1LV5256ESP-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESP-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESP-5SI#B1 reliable?
The price and inventory of R1LV5256ESP-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESP-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESP-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESP-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESP-5SI#B1?
R1LV5256ESP-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESP-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESP-5SI#B1?
For technical support, including R1LV5256ESP-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESP-5SI#B1 requirements.
6.How does Aetrix verify that R1LV5256ESP-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESP-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESP-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESP-5SI#B1?
All R1LV5256ESP-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESP-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESP-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV5256ESP-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV5256ESP-5SI#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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