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Renesas R1LV5256ESP-5SI#S1
- Part No.:
- R1LV5256ESP-5SI#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-SOIC (0.330", 8.40mm Width)
- Datasheet:
-
R1LV5256ESP-5SI#S1.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,652
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Product details
Overview
R1LV5256ESP-5SI#S1 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 28-pin SOP package, operating from 2.7V to 3.6V with 55 ns access time, 0.6 µA typical standby current at 3.0V, and TTL-compatible I/O-designed for battery-backed memory systems in portable instrumentation and industrial controllers.
For engineers reviewing the R1LV5256ESP-5SI#S1 datasheet, R1LV5256ESP-5SI#S1 pinout, R1LV5256ESP-5SI#S1 application, or R1LV5256ESP-5SI#S1 equivalent, key selection criteria include single-supply operation, no-refresh architecture, OR-tie capable three-state outputs, chip-select expandability, and data retention down to 2.0V.
Technical Context
This LPSRAM implements a fully asynchronous, no-clock, no-refresh architecture with independent address decoding, sense/write amplifiers, and clock generator for timing control. Its dual enable logic (CS#, OE#, WE#) supports read, write, output disable, and high-Z standby modes without external sequencing.
The device uses Renesas' 0.15 µm CMOS and TFT process to achieve low active current (14 mA typical), ultra-low standby current (0.6 µA at 25°C), and guaranteed data retention at Vcc ≥ 2.0V while maintaining full TTL-level compatibility on all inputs and outputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32,768 words × 8 bits) - supports byte-wide data bus interfacing without width conversion logic |
| Access time | 55 ns - enables direct connection to legacy microcontrollers with ≤20 MHz bus timing |
| Supply voltage | 2.7 V to 3.6 V - compatible with 3.3 V system rails and tolerant of Li-ion battery discharge profiles |
| Standby current | 0.6 µA typical at 3.0 V / 25°C - extends battery life in always-on backup mode by >10× vs. standard SRAM |
| Data retention Vcc | 2.0 V minimum - preserves memory contents during brown-out or sleep-mode power collapse |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifter requirements in mixed-voltage designs |
| Output drive | Three-state, OR-tie capable - allows shared bus topology with multiple devices without external bus transceivers |
Pinout & Package
Package: 450-mil 28-pin plastic SOP (Small Outline Package), surface-mount, JEDEC MS-012AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6 V supply rail; decoupling capacitor required within 10 mm |
| Vss (GND) | Ground reference | Common return path for all signals and internal logic; must be low-impedance |
| A0–A14 | Address inputs | 15-bit address bus supporting full 32k-word addressing; synchronous with CS# assertion |
| DQ0–DQ7 | Bi-directional data I/O | 8-bit common bus; high-impedance when CS# = high or OE# = high |
| CS# | Chip select (active low) | Enables memory array; controls entry into data retention mode when high |
| WE# | Write enable (active low) | Controls write cycle initiation; latches DQ data on falling edge with CS# low |
| OE# | Output enable (active low) | Gates output drivers; prevents bus contention when multiple devices share DQ lines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead in embedded firmware |
| Low-voltage data retention | Maintains stored data at Vcc ≥ 2.0 V, enabling seamless transition to battery-backup mode |
| OR-tie capable outputs | Permits wired-OR bus configurations without external pull-ups or logic gates |
| Easy memory expansion | CS#-based chip selection supports daisy-chained or decoded multi-chip memory banks |
| TTL-compatible signaling | Direct interface with legacy 5 V logic families using 3.3 V supply, reducing BOM count |
Applications
| Portable Medical Monitors | Industrial PLC Data Loggers |
|---|---|
Use Scenario: Continuous ECG waveform buffering during battery-only operation with periodic flash offload. IC Role / Device Role / Timing Role: Non-volatile buffer storing real-time sensor samples between host processor wake cycles. Use Value: 0.6 µA standby current extends battery life to >6 months; 2.0 V data retention prevents loss during deep-sleep transitions. | Use Scenario: Storing machine state and alarm history in DIN-rail mounted controllers with intermittent AC power. IC Role / Device Role / Timing Role: Battery-backed SRAM holding critical runtime variables across power interruptions. Use Value: Guaranteed data integrity at Vcc ≥ 2.0 V ensures zero data loss during brown-out events lasting seconds. |
| Smart Meter Firmware Cache | Automotive Body Control Modules |
Use Scenario: Caching tariff tables and usage counters in electricity meters powered by supercapacitors. IC Role / Device Role / Timing Role: Low-power volatile memory bridging gaps between main MCU execution and EEPROM writes. Use Value: 55 ns access time enables real-time metering without pipeline stalls; no refresh simplifies firmware design. | Use Scenario: Storing door lock status, window position, and lighting configuration in 12 V automotive subsystems. IC Role / Device Role / Timing Role: Backup memory retaining user preferences during ignition-off periods. Use Value: TTL-compatible I/O interfaces directly with 3.3 V CAN microcontrollers; SOP package supports automated SMT assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus width (256K × 16), 10 ns access, 3.3 V only, 44-pin TSOP | Higher density and speed but requires PCB redesign for wider data bus and different footprint | Select when system demands 16-bit parallel access and faster timing; not drop-in compatible |
| AS6C4008-55ZIN | 2.7–5.5 V supply range, 55 ns access, 28-pin SOP, 0.8 µA standby (typ.) | Broad voltage support suits mixed 3.3 V / 5 V systems but higher standby current reduces battery life | Choose for legacy 5 V designs needing pin-compatible upgrade path; verify VIL/VIH margins |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV5256ESP-5SI#S1 offers optimal trade-off of ultra-low standby current, strict 3.3 V compatibility, and proven reliability in battery-critical applications-without requiring bus width changes or voltage rail adaptation.
Availability
R1LV5256ESP-5SI#S1 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and smart meter firmware cache applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for R1LV5256ESP-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The R1LV5256E Series was developed specifically for low-power, battery-operated memory applications where simplicity, data retention, and long service life outweigh raw speed-targeting portable instrumentation, energy metering, and industrial control systems.
FAQ
What is the maximum operating temperature range for R1LV5256ESP-5SI#S1?
The R1LV5256ESP-5SI#S1 is rated for operation from –40°C to +85°C ambient temperature. This industrial-grade range is validated per the Absolute Maximum Ratings and DC Operating Conditions tables in the official Renesas datasheet R10DS0269EJ0200 Rev.2.00. Thermal derating is not required within this span, and the device maintains full 55 ns access time performance across the entire range.
Does R1LV5256ESP-5SI#S1 require an external clock or refresh circuit?
No, the R1LV5256ESP-5SI#S1 is a true static RAM with no clock input and no refresh requirement. Its architecture relies solely on asynchronous CS#, WE#, and OE# control signals. This eliminates timing-critical refresh cycles and associated firmware overhead-making it ideal for ultra-low-power and safety-critical applications where deterministic behavior is essential. The R1LV5256ESP-5SI#S1 retains data as long as Vcc remains ≥2.0 V and CS# is held high.
What is the pin-compatible alternative to R1LV5256ESP-5SI#S1 in the same 28-pin SOP package?
The AS6C4008-55ZIN is a pin-compatible alternative in 28-pin SOP with identical pinout, 55 ns access time, and 2.7–5.5 V supply range. However, its typical standby current is 0.8 µA (vs. 0.6 µA for R1LV5256ESP-5SI#S1), and it lacks Renesas' certified data retention profile below 2.7 V. For direct replacement in existing R1LV5256ESP-5SI#S1 layouts, verify VIH/VIL margins under your system's Vcc conditions.
Can R1LV5256ESP-5SI#S1 interface directly with a 5 V microcontroller?
Yes-the R1LV5256ESP-5SI#S1 features TTL-compatible inputs, meaning VIH = 2.0 V min and VIL = 0.6 V max, allowing safe interfacing with 5 V logic outputs without level shifters. Its outputs swing to VOH ≥ 2.4 V (at –0.5 mA), which meets TTL high-level recognition thresholds. However, ensure the 5 V controller's output low voltage does not exceed 0.6 V and that Vcc remains within 2.7–3.6 V to avoid overstress.
What is the data retention capability of R1LV5256ESP-5SI#S1 during power loss?
The R1LV5256ESP-5SI#S1 guarantees data retention at Vcc ≥ 2.0 V when CS# is held high, with typical retention current of 0.6 µA at 25°C. Retention time depends on backup capacitance and load, but the device sustains valid data indefinitely under these conditions-as confirmed in the Low Vcc Data Retention Characteristics table (Page 11) of the R10DS0269EJ0200 datasheet. No external circuitry is needed beyond a hold-up capacitor and diode.
R1LV5256ESP-5SI#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-SOIC (0.330", 8.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOP
R1LV5256ESP-5SI#S1 FAQ
1.How can I place an order for R1LV5256ESP-5SI#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV5256ESP-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV5256ESP-5SI#S1 reliable?
The price and inventory of R1LV5256ESP-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESP-5SI#S1 is usually 5 days.
3.What payment methods are accepted for R1LV5256ESP-5SI#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESP-5SI#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV5256ESP-5SI#S1?
R1LV5256ESP-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV5256ESP-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV5256ESP-5SI#S1?
For technical support, including R1LV5256ESP-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESP-5SI#S1 requirements.
6.How does Aetrix verify that R1LV5256ESP-5SI#S1 is sourced from the original manufacturer or authorized distributors?
All R1LV5256ESP-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESP-5SI#S1 meets industry standards.
7.What is the process for return or replacement of R1LV5256ESP-5SI#S1?
All R1LV5256ESP-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESP-5SI#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV5256ESP-5SI#S1 part is unused and in its original packaging.
Return procedure for R1LV5256ESP-5SI#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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