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Renesas R1LV5256ESP-7SR#S0

Part No.:
R1LV5256ESP-7SR#S0
Manufacturer:
Renesas
Category:
Memory
Package:
28-SOIC (0.342", 8.69mm Width)
Datasheet:
AetrixR1LV5256ESP-7SR#S0.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:693

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Product details

Overview

R1LV5256ESP-7SR#S0 from Renesas Electronics is a 256Kb low-power static RAM (32k × 8-bit) in 450-mil 28-pin SOP package, operating from 2.7V to 3.6V with 70 ns access time and 0°C to +70°C temperature range. It delivers TTL-compatible I/O, no-refresh operation, and 1 µA typical standby current at 3.0V - optimized for battery-backed memory systems in portable instrumentation and embedded controllers.

For engineers reviewing the R1LV5256ESP-7SR#S0 datasheet, R1LV5256ESP-7SR#S0 pinout, R1LV5256ESP-7SR#S0 application, or R1LV5256ESP-7SR#S0 equivalent, key selection criteria include single-supply 2.7–3.6V operation, 70 ns read/write timing, 28-pin SOP mechanical compatibility, and low-leakage data retention down to 2.0V Vcc.

Technical Context

This device implements a fully static CMOS memory array with asynchronous parallel interface, using address latching via CS#, WE#, and OE# control signals. All inputs are TTL-compatible with VIH ≥ 2.0V and VIL ≤ 0.6V, and outputs feature three-state capability with OR-tie support and bus contention prevention via OE#.

The R1LV5256ESP-7SR#S0 uses a 32k-word × 8-bit organization with common I/O pins (DQ0–DQ7), no internal clocks or refresh circuitry, and chip-select–driven memory expansion. Standby mode is entered when CS# = VIH, reducing ICC to ≤1 µA at 25°C while retaining data down to 2.0V Vcc.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 256 Kbit (32,768 × 8-bit) - supports byte-wide data paths without external multiplexing
Access time 70 ns max - defines minimum read/write cycle duration for synchronous system timing budgeting
Supply voltage 2.7–3.6 V - enables direct interfacing with 3.3V logic families and battery-powered operation
Standby current 1 µA typical at 3.0V/25°C - extends battery life in always-on backup memory applications
Data retention Vcc 2.0 V min - maintains stored contents during brown-out or sleep-mode power reduction
Operating temperature 0°C to +70°C - qualified for commercial-grade embedded systems and industrial control panels
I/O compatibility TTL - ensures plug-and-play integration with legacy microcontrollers and FPGA I/O banks

Pinout & Package

Package: 450-mil 28-pin plastic SOP (PRSP0028DB-B / 28P2W-C).

Pin/Terminal Circuit Role Design Meaning
Vcc Power supply Primary 2.7–3.6V supply rail; decoupling capacitor required near pin
Vss Ground Signal and power reference plane; low-impedance return path for all I/O and core logic
A0–A14 Address input 15-bit address bus selecting one of 32,768 memory locations
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus; high-impedance when CS# or OE# inactive
CS# Chip select Active-low enable controlling device activation and data retention entry
WE# Write enable Active-low signal initiating write cycles; latches DQ data on falling edge
OE# Output enable Active-low control enabling read data output; prevents bus contention during multi-device sharing

Key Features

Feature Design Value
No refresh required Eliminates external refresh controller or timer overhead in microcontroller-based systems
Low-voltage data retention Maintains valid memory contents down to 2.0V Vcc, supporting graceful power-fail recovery
Three-state outputs with OR-tie Enables direct connection of multiple SRAMs to shared data bus without external logic
TTL-compatible I/O levels Direct interface with 3.3V microcontrollers, CPLDs, and legacy 5V-tolerant peripherals
Easy memory expansion CS#-based chip selection simplifies adding multiple R1LV5256E devices in banked configurations

Applications

Portable Medical Monitors Industrial PLC Data Buffers

Use Scenario: Battery-powered ECG or SpO₂ monitors requiring nonvolatile data logging during intermittent power loss.

IC Role / Device Role / Timing Role: Primary working memory holding real-time sensor samples and configuration parameters between host processor wake cycles.

Use Value: 1 µA standby current and 2.0V data retention extend operational uptime and ensure waveform integrity across power interruptions.

Use Scenario: Compact programmable logic controllers storing I/O state history and ladder logic variables in space-constrained DIN-rail enclosures.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory for cyclic scan execution, supporting deterministic 70 ns read/write response.

Use Value: TTL-compatible interface and 28-pin SOP footprint simplify PCB layout and reduce BOM count versus discrete logic alternatives.

Point-of-Sale Terminals Automotive Infotainment Displays

Use Scenario: Retail terminals capturing transaction logs and receipt buffers during brief AC power outages or battery switchover.

IC Role / Device Role / Timing Role: Backup memory preserving unsent transaction records and UI state prior to safe shutdown.

Use Value: Chip-select–controlled data retention mode activates automatically on power drop, eliminating firmware intervention.

Use Scenario: In-vehicle display modules caching font glyphs, touch calibration data, and audio metadata for instant resume after ignition cycling.

IC Role / Device Role / Timing Role: Low-latency SRAM serving as display frame buffer auxiliary storage and configuration cache.

Use Value: 70 ns access time meets real-time rendering deadlines; 0°C to +70°C rating covers cabin ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-7TLI 16-bit bus width (256K × 16), 70 ns access, 3.3V only, 44-pin TSOP Higher density per pin but requires wider data bus and different footprint Select when system architecture supports 16-bit data paths and board space allows larger package
AS6C4008-70ZIN 2.7–3.6V supply, 70 ns access, 28-pin SOP, but 512K × 8-bit (4 Mb) Double memory capacity with identical timing and package; higher ICC2 (8 mA typical) Choose for future-proofing or when application demands >256Kb without redesigning layout

Compared with IS61LV25616AL-7TLI and AS6C4008-70ZIN, the R1LV5256ESP-7SR#S0 offers optimal balance of byte-wide compatibility, ultra-low standby current, and compact 28-pin SOP fit - ideal where pin count, power, and footprint are constrained.

Availability

R1LV5256ESP-7SR#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, point-of-sale terminals, and automotive infotainment displays requiring stable component supply across extended production lifecycles.

Supply support for R1LV5256ESP-7SR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and consumer markets.

The R1LV5256E Series was designed as low-voltage, low-power static RAMs for battery-operated and battery-backup memory applications - emphasizing simplicity, reliability, and minimal external support circuitry.

FAQ

What is the maximum operating frequency supported by the R1LV5256ESP-7SR#S0?

The R1LV5256ESP-7SR#S0 does not use a clock signal and operates asynchronously. Its timing is defined by access and cycle times: 70 ns maximum address access time (tAA) and 70 ns read/write cycle time (tRC/tWC). System-level maximum throughput depends on bus protocol overhead, but the device supports sustained random access at up to ~14.3 MHz effective rate under ideal conditions. The R1LV5256ESP-7SR#S0 requires no clock generation circuitry.

Does the R1LV5256ESP-7SR#S0 require external refresh circuitry?

No, the R1LV5256ESP-7SR#S0 is a fully static RAM and requires no refresh cycles or external refresh controller. Its CMOS memory cells retain data indefinitely as long as power is applied and CS# remains active. This eliminates timing-critical refresh windows and simplifies firmware design - a key advantage over DRAM. The R1LV5256ESP-7SR#S0 maintains data even in standby mode when CS# is high.

Can the R1LV5256ESP-7SR#S0 be used with a 5V microcontroller interface?

The R1LV5256ESP-7SR#S0 has TTL-compatible inputs (VIH ≥ 2.0V, VIL ≤ 0.6V) and outputs (VOH ≥ 2.4V at –0.5mA), making it safe to interface directly with 5V-tolerant 3.3V microcontrollers. However, it must be powered from 2.7–3.6V - applying 5V to Vcc will exceed absolute maximum ratings and cause permanent damage. The R1LV5256ESP-7SR#S0 is not 5V I/O tolerant on its power rail.

What is the data retention behavior of the R1LV5256ESP-7SR#S0 during power loss?

When Vcc drops below normal operating range but remains ≥2.0V and CS# stays high, the R1LV5256ESP-7SR#S0 enters data retention mode with ICCDR ≤10 µA at +85°C. Data is preserved without refresh for indefinite duration as long as Vcc ≥2.0V. Recovery requires tR = 5 ms after Vcc returns to ≥2.7V before normal operation resumes. The R1LV5256ESP-7SR#S0 guarantees retention down to 2.0V, not just "low voltage" generally.

Is the R1LV5256ESP-7SR#S0 pin-compatible with other variants in the R1LV5256E family?

Yes - all R1LV5256E Series parts in the same package type (e.g., 28-pin SOP) share identical pinouts, including R1LV5256ESP-5SR#S0, R1LV5256ESP-7SI#S0, and R1LV5256ESP-7SR#S0. Differences are limited to access time (55 ns vs. 70 ns) and temperature grade (R: 0°C to +70°C vs. I: –40°C to +85°C). The R1LV5256ESP-7SR#S0 can be substituted for R1LV5256ESP-5SR#S0 in non-speed-critical designs without PCB changes.

R1LV5256ESP-7SR#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-SOIC (0.342", 8.69mm Width)
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOP

R1LV5256ESP-7SR#S0 FAQ

1.How can I place an order for R1LV5256ESP-7SR#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV5256ESP-7SR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV5256ESP-7SR#S0 reliable?

The price and inventory of R1LV5256ESP-7SR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV5256ESP-7SR#S0 is usually 5 days.

3.What payment methods are accepted for R1LV5256ESP-7SR#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV5256ESP-7SR#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV5256ESP-7SR#S0?

R1LV5256ESP-7SR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV5256ESP-7SR#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV5256ESP-7SR#S0?

For technical support, including R1LV5256ESP-7SR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV5256ESP-7SR#S0 requirements.

6.How does Aetrix verify that R1LV5256ESP-7SR#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV5256ESP-7SR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV5256ESP-7SR#S0 meets industry standards.

7.What is the process for return or replacement of R1LV5256ESP-7SR#S0?

All R1LV5256ESP-7SR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV5256ESP-7SR#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV5256ESP-7SR#S0 part is unused and in its original packaging.

Return procedure for R1LV5256ESP-7SR#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV5256ESP-7SR#S0 Tags

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