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Renesas R1Q2A7209ABG-40IB0

Part No.:
R1Q2A7209ABG-40IB0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1Q2A7209ABG-40IB0.pdf
Description:
STANDARD SRAM, 8MX9, 0.45NS
Quantity:
Payment:
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Inventory:4,658

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Product details

Overview

R1Q2A7209ABG-40IB0 from Renesas Electronics is a 8,388,608-word × 9-bit (72-Mbit) synchronous Quad Data Rate II (QDR-II) SRAM with burst-of-two operation, 1.8 V core supply (VDD), 1.5 V I/O supply (VDDQ), and 165-pin FBGA (15 × 17 mm) packaging. It features dual input clocks (K and /K), echo clocks (CQ and /CQ), JTAG 1149.1 test access, and clock-stop capability - designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the R1Q2A7209ABG-40IB0 datasheet, R1Q2A7209ABG-40IB0 pinout, R1Q2A7209ABG-40IB0 application, or R1Q2A7209ABG-40IB0 equivalent, this page delivers verified specifications, validated pin functions, industrial-temperature (-40°C to +85°C) operation, HSTL I/O compatibility, and real-world use context for telecom infrastructure and high-speed memory subsystems.

Technical Context

This QDR-II SRAM implements full CMOS six-transistor memory cells with synchronous peripheral circuitry and an internal burst counter. All address, control, and data inputs are registered on the rising edges of K and /K, enabling precise DDR timing without skew-sensitive single-clock dependencies.

It supports concurrent read/write operations via independent ports, uses DLL/PLL circuitry for wide output data valid windows, and provides programmable output impedance via ZQ termination. The device operates at up to 250 MHz (4 ns cycle time) with 1.5-cycle read latency and includes /DOFF for DLL/PLL bypass during low-frequency operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (8,388,608 × 9-bit organization)
Max Clock Frequency 250 MHz - enables 500 MT/s per data pin with burst-of-two transfers
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.5 V (I/O buffer supply)
Read Latency 1.5 cycles - deterministic timing for pipeline-synchronized data capture
Package 165-ball FBGA (15 mm × 17 mm, 1.4 mm height) - RoHS-compliant, Pb-free
Operating Temperature −40°C to +85°C - qualified for industrial-grade embedded systems
Interface Standard HSTL Class I - compatible with high-speed backplane and switch fabric signaling

Pinout & Package

Package: 165-pin plastic FBGA (15 × 17 × 1.4 mm), ball pitch 0.8 mm, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
/R Synchronous read enable Active-low signal registered on K edge; initiates burst read from addressed location
/W Synchronous write enable Active-low signal registered on K edge; initiates burst write using D0–D8
/BW Byte write control Single /BW pin controls write enable for all 9 data bits (x9 configuration)
K, /K Input clock pair Differential clocks registering all inputs on rising edges; defines timing reference for all transactions
CQ, /CQ Output echo clocks Tightly matched to Q outputs; used as data-valid strobes for high-speed capture in FPGA/ASIC receivers
ZQ Output impedance calibration Connect to precision resistor to ground (RQ ≈ 250 Ω) to set 0.2×RQ output drive strength
/DOFF DLL/PLL disable Pull low to bypass DLL/PLL for stable sub-120 MHz operation or simplified power-up sequencing
TMS, TCK, TDI, TDO JTAG 1149.1 interface Fully compliant boundary-scan test access; supports in-system verification and debug

Key Features

Feature Design Value
Concurrent Read/Write Ports Independent address/data paths allow simultaneous access - eliminates arbitration delay in buffer applications
100% Bus Utilization Burst-of-two DDR transfers achieve full bandwidth without dead cycles - critical for line-rate packet processing
User-Programmable Output Impedance ZQ calibration enables system-level impedance matching to 50 Ω differential buses without external terminators
2-Word Burst Architecture Minimizes transaction overhead and latency vs. longer bursts - optimal for small-packet forwarding engines
Industrial-Temperature Support Rated for −40°C to +85°C ambient - validated for carrier-grade equipment deployed in uncontrolled environments
Low-Power Clock-Stop Mode Stops K and /K clocks while retaining state; restarts in <1 µs - reduces dynamic power during traffic lulls

Applications

Network Switch Buffering Router Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching ASICs.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to SerDes PHYs and packet processors.

Use Value: 250 MHz operation with 1.5-cycle read latency ensures zero-cycle queuing delay for 10 GbE+ traffic shaping.

Use Scenario: Acting as packet descriptor memory in modular router line cards handling OC-192/STM-64 interfaces.

IC Role / Device Role / Timing Role: Synchronous dual-port SRAM providing deterministic access for control-plane and data-plane coherency.

Use Value: Concurrent read/write capability enables parallel header lookup and payload buffering without contention stalls.

Telecom Baseband Processing High-Performance Test Equipment

Use Scenario: Buffering IQ samples between digital downconverters and channelizers in 4G/LTE base station transceivers.

IC Role / Device Role / Timing Role: Low-jitter, burst-aligned memory staging raw RF sample streams for FFT-based processing pipelines.

Use Value: HSTL I/O and echo clocks (CQ, /CQ) simplify timing closure with Xilinx Ultrascale+ GTY transceivers.

Use Scenario: Capturing high-speed serial protocol waveforms (e.g., PCIe Gen3, SATA III) in logic analyzers and BERTs.

IC Role / Device Role / Timing Role: Deep, fast-access memory capturing multi-lane parallelized data streams at line rate.

Use Value: 72-Mbit density and 500 MT/s effective bandwidth support >100 ns capture windows at 25 Gbps aggregate rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2665KV18-400BZXC Same 72-Mbit x9 density, 400 MHz max, but uses 209-ball FBGA (17 × 17 mm) and requires 1.5 V VDDQ only Higher speed grade; suited for designs targeting >300 MHz clock domains where layout space permits larger package Select when higher bandwidth is required and PCB real estate allows 209-ball footprint
AS7C3256A-15JCIN Asynchronous 256-Kbit × 9 SRAM; no QDR interface, no echo clocks, no burst mode - single-cycle random access only Lower cost, lower power, but lacks concurrency and DDR timing - suitable only for non-real-time control buffers Choose only for legacy or cost-sensitive designs where deterministic burst latency and dual-port operation are unnecessary

Compared with CY7C2665KV18-400BZXC, R1Q2A7209ABG-40IB0 offers identical functionality in a smaller 165-ball package and industrial temperature range, while AS7C3256A-15JCIN lacks QDR timing, burst capability, and concurrent port support - making it unsuitable for high-throughput packet buffering.

Availability

R1Q2A7209ABG-40IB0 is available at Aetrix Electronics and suitable for network switch buffering, telecom baseband processing, and high-performance test equipment requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for R1Q2A7209ABG-40IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1Q2A7209ABG-40IB0 belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-speed, low-latency packet buffering in carrier-grade networking and telecom equipment.

FAQ

What is the maximum operating frequency of the R1Q2A7209ABG-40IB0?

The R1Q2A7209ABG-40IB0 is rated for a maximum clock frequency of 250 MHz, corresponding to a 4 ns minimum cycle time. This enables 500 million transfers per second (MT/s) on each of its 9 data lines using burst-of-two QDR-II operation. The device meets this specification across the full industrial temperature range (−40°C to +85°C) under recommended DC conditions (VDD = 1.8 V ±0.1 V, VDDQ = 1.5 V).

Does the R1Q2A7209ABG-40IB0 support concurrent read and write operations?

Yes, the R1Q2A7209ABG-40IB0 supports true concurrent read and write operations via separate address and data paths. Its architecture allows initiation of a read cycle (/R low) and a write cycle (/W low) in the same clock period, provided addresses and control signals meet setup/hold timing relative to K and /K. This eliminates arbitration delays and is essential for real-time packet buffering in network switches.

What is the function of the ZQ pin on the R1Q2A7209ABG-40IB0?

The ZQ pin on the R1Q2A7209ABG-40IB0 is used for output driver impedance calibration. When terminated to ground via a precision 250 Ω resistor, it configures the Q and CQ output drivers to deliver approximately 50 Ω differential impedance (0.2 × RQ). This enables direct impedance matching to standard PCB transmission lines without external series or parallel terminators, simplifying high-speed layout and improving signal integrity.

How does the /DOFF pin affect operation of the R1Q2A7209ABG-40IB0?

The /DOFF pin on the R1Q2A7209ABG-40IB0 disables the internal DLL/PLL when pulled low. In this mode, the device operates with reduced timing margin but greater stability at frequencies below 120 MHz or during power-up sequencing. When /DOFF is high, the DLL/PLL is active, enabling full 250 MHz performance with tight output skew control and wide data valid windows - required for reliable operation in high-speed systems.

Is the R1Q2A7209ABG-40IB0 compatible with JTAG boundary-scan testing?

Yes, the R1Q2A7209ABG-40IB0 integrates a fully compliant IEEE 1149.1 JTAG test access port (TAP) with dedicated TMS, TCK, TDI, and TDO pins. It supports boundary-scan instruction register loading, data register access, and device identification - enabling in-circuit verification, interconnect testing, and debug during manufacturing and field service. All JTAG signals operate at 1.8 V I/O levels.

R1Q2A7209ABG-40IB0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1Q2A7209ABG-40IB0 FAQ

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The price and inventory of R1Q2A7209ABG-40IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1Q2A7209ABG-40IB0 is usually 5 days.

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5.How can I obtain technical support or documentation for R1Q2A7209ABG-40IB0?

For technical support, including R1Q2A7209ABG-40IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1Q2A7209ABG-40IB0 requirements.

6.How does Aetrix verify that R1Q2A7209ABG-40IB0 is sourced from the original manufacturer or authorized distributors?

All R1Q2A7209ABG-40IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1Q2A7209ABG-40IB0 meets industry standards.

7.What is the process for return or replacement of R1Q2A7209ABG-40IB0?

All R1Q2A7209ABG-40IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1Q2A7209ABG-40IB0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1Q2A7209ABG-40IB0 part is unused and in its original packaging.

Return procedure for R1Q2A7209ABG-40IB0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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