Renesas R1Q2A7218ABB-40IA0

Overview

R1Q2A7218ABB from Renesas Electronics is a 4,194,304-word × 18-bit (72-Mbit) synchronous Quad Data Rate II (QDR-II) SRAM with burst-of-2 operation, 1.8 V core supply (VDD), 1.4–1.5 V I/O supply (VDDQ), and 165-pin FBGA (13 × 15 mm) packaging. It features dual input clocks (K and /K), echo clocks (CQ and /CQ), HSTL I/O, programmable output impedance, and JTAG 1149.1 test access - designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the R1Q2A7218ABB datasheet, R1Q2A7218ABB pinout, R1Q2A7218ABB application, or R1Q2A7218ABB equivalent, this page delivers verified specifications, validated pin functions, industrial-temperature support (−40°C to +85°C), DDR timing compliance, and real-world use cases in telecom infrastructure where concurrent read/write throughput and low-latency burst access are critical.

Technical Context

This QDR-II SRAM implements full CMOS six-transistor memory cells with integrated synchronous peripheral circuitry and a burst counter. All address, control, and data inputs are registered on the rising edges of K and /K, enabling precise DDR timing without external latch logic. The device supports clock-stop mode with microsecond restart and uses DLL/PLL circuitry to widen the output data valid window for reliable capture at high frequencies.

It provides separate independent read and write data ports, allowing concurrent transactions and 100% bus utilization. Read latency is fixed at 1.5 cycles (L15), and the internal architecture supports depth expansion via simple control logic - eliminating need for external arbitration in multi-chip configurations.

Key Specifications

Pinout & Package

Package: 165-pin Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, Pb-free (RoHS 6/6 compliant), marked "R1Q2A7218ABB-40IA0".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with CY7C1721KV18-250BAXI and AS7C37218B-250BIN, the R1Q2A7218ABB-40IA0 uniquely combines industrial temperature support, DLL/PLL disable (/DOFF), and guaranteed 1.4 V minimum VDDQ - making it the sole option for thermally demanding, power-gated, or mixed-voltage telecom systems.

Availability

R1Q2A7218ABB is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, baseband processing memory, and industrial Ethernet gateway buffers requiring stable component supply across extended lifecycle programs.

Supply support for R1Q2A7218ABB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1Q2A7218ABB belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency packet buffering in carrier-grade networking and telecom equipment where deterministic timing and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency of the R1Q2A7218ABB?

The R1Q2A7218ABB-40IA0 is rated for 250 MHz maximum operation (cycle time = 4.0 ns), as indicated by the "-40" speed grade suffix. This frequency is validated across the full industrial temperature range (−40°C to +85°C) with VDD = 1.8 V and VDDQ = 1.5 V, and supports sustained burst-of-2 throughput of 9 Gbps (18 bits × 250 MHz × 2).

Does the R1Q2A7218ABB support both read and write operations simultaneously?

Yes, the R1Q2A7218ABB supports true concurrent read and write operations via physically separate data ports (D[0:17] for write, Q[0:17] for read). Its architecture enables 100% bus utilization without arbitration - a key requirement for non-blocking switch fabrics where ingress and egress traffic must be buffered independently.

What is the function of the /DOFF pin on the R1Q2A7218ABB?

The /DOFF (DLL/PLL Disable) pin on the R1Q2A7218ABB, when driven low, bypasses the internal DLL/PLL to enable stable operation below 120 MHz. This allows reliable initialization, low-power standby modes, and compatibility with slower system clocks - unlike alternatives that require DLL lock at all times.

How is output impedance controlled on the R1Q2A7218ABB?

Output impedance on the R1Q2A7218ABB is calibrated via the ZQ pin, which connects to a precision external resistor (RQ ≈ 250 Ω) tied to ground. The device sets its output driver impedance to 0.2 × RQ, achieving ±15% matching to typical 50 Ω PCB traces - eliminating need for discrete termination resistors and reducing BOM count.

Is the R1Q2A7218ABB compatible with JTAG boundary-scan testing?

Yes, the R1Q2A7218ABB integrates IEEE 1149.1-compliant JTAG test logic with dedicated TMS, TDI, TCK, and TDO pins operating at 1.8 V I/O levels. This enables full boundary-scan visibility for solder joint verification, interconnect testing, and in-system programming - critical for high-reliability telecom manufacturing.