Renesas R1Q2A7236ABG-40IA1
- Part No.:
- R1Q2A7236ABG-40IA1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1Q2A7236ABG-40IA1.pdf
- Description:
- 72-MB DDR II+ SRAM (2M X 36-BIT)
- Quantity:
- Payment:

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Inventory:393
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Product details
Overview
R1Q2A7236ABG-40IA1 from Renesas Electronics is a 72-Mbit synchronous Quad Data Rate II (QDR-II) SRAM with 2,097,152-word × 36-bit organization, 1.8 V core supply (VDD), 1.4–1.5 V I/O supply (VDDQ), and 250 MHz maximum operating frequency. It features dual-clock DDR timing (K/̅K for inputs, C/̅C for outputs), burst-of-two read/write operation, and HSTL-compatible I/O for high-speed networking and packet buffering applications.
For engineers reviewing the R1Q2A7236ABG-40IA1 datasheet, R1Q2A7236ABG-40IA1 pinout, R1Q2A7236ABG-40IA1 application, or R1Q2A7236ABG-40IA1 equivalent, this device delivers deterministic low-latency memory access in FPGA-attached cache, telecom line card buffers, and high-throughput switching fabric designs where concurrent read/write ports and precise echo clock synchronization are required.
Technical Context
The R1Q2A7236ABG-40IA1 implements a full CMOS six-transistor memory cell architecture with integrated synchronous peripheral circuitry, including a burst counter and input register latching on the rising edges of K and /K. Its dual-clock interface separates address/control registration (K/̅K) from output data timing (C/̅C), minimizing skew between data and echo clocks (CQ/̅CQ).
It supports clock-stop mode with microsecond restart, DLL/PLL-based output timing control for wide data valid windows, and JTAG 1149.1 test access. The device operates at industrial temperature (−40°C to +85°C) and uses 165-pin FBGA (13 mm × 15 mm) packaging with HSTL I/O and programmable output impedance via ZQ calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2,097,152 words × 36 bits) - enables single-chip storage for 256 KB of 36-bit wide data, ideal for burst-oriented packet buffers. |
| Max Clock Frequency | 250 MHz - supports 500 MT/s effective data rate per pin using double-data-rate transfers on K/̅K and C/̅C edges. |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.5 V (I/O) - ensures compatibility with 1.5 V HSTL-18 signaling and low-power system integration. |
| Burst Length | 2-word burst - minimizes transaction overhead and aligns with QDR-II standard for predictable 2-cycle bus utilization per access. |
| Read Latency | 1.5 cycles (L15) - guarantees first valid output data aligned to CQ/̅CQ within 1.5 clock periods after /R assertion, critical for pipeline-constrained systems. |
| Package | 165-pin FBGA (13 mm × 15 mm, BB variant) - provides high I/O count in compact footprint suitable for dense PCB layouts in telecom and networking hardware. |
| Operating Temperature | −40°C to +85°C (Industrial grade) - validated for deployment in base station equipment, industrial controllers, and outdoor edge infrastructure. |
Pinout & Package
Package: 165-pin Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 0.8 mm ball pitch, BB marking (Pb-free, tray). Compliant with JEDEC MO-270AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| /R | Synchronous Read Enable | Latched on K rising edge; initiates burst-of-two read cycle; must meet setup/hold timing relative to K/̅K. |
| /W | Synchronous Write Enable | Latched on K rising edge; initiates burst-of-two write cycle; used with /BW0–/BW3 for byte-select writes. |
| K, /K | Input Clock Pair | Registers address, /R, /W, and data inputs on rising edges; /K ideally 180° out-of-phase with K; defines core timing domain. |
| C, /C | Output Clock Pair | Controls output data timing reference; rising edges of C/̅C define Q0–Q35 and CQ/̅CQ alignment; may be tied high to use K/̅K instead. |
| CQ, /CQ | Echo Clock Outputs | Tightly matched to Q outputs; used as data-valid strobes in high-speed capture; continue running during tri-state conditions. |
| ZQ | Output Impedance Calibration Input | Connected to precision resistor to ground (RQ ≈ 5× target Z0); sets Q/CQ driver impedance to 0.2×RQ; enables system-level termination matching. |
| /DOFF | DLL/PLL Disable | Low disables DLL/PLL for stable sub-120 MHz operation; high enables DLL/PLL for full-speed timing compliance and jitter reduction. |
| TMS, TDI, TCK, TDO | JTAG 1149.1 Interface | IEEE-compliant boundary-scan test access; TCK must be tied to VSS if unused; all operate at 1.8 V I/O level. |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Independent address/data paths allow simultaneous read and write operations without arbitration delay-essential for real-time buffer management in switches and routers. |
| HSTL I/O with Programmable Impedance | ZQ-calibrated output drivers match 25–50 Ω trace impedances; eliminates external termination resistors and reduces signal integrity risk in >200 MHz designs. |
| Two-Tick Burst Architecture | Fixed 2-word burst minimizes command overhead and guarantees deterministic latency-enables precise timing budgeting in hard-real-time systems. |
| Integrated DLL/PLL Timing Control | Generates clean, phase-aligned echo clocks (CQ/̅CQ) and extends data valid window across process/voltage/temperature corners-reduces setup/hold margin requirements. |
| Industrial Temperature Support | Validated operation from −40°C to +85°C with full DC/AC specifications-ensures reliability in uncontrolled environments like remote radio units and factory automation nodes. |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer pool with zero-latency concurrent read/write access for header inspection and queue management logic. Use Value: 250 MHz clock rate and burst-of-two operation deliver 18 Gbps aggregate bandwidth (36 bits × 500 MT/s), eliminating bottlenecks in 10/25/40 GbE line cards. |
Use Scenario: Providing temporary storage for cell/packet reordering and congestion control in multi-stage switch fabrics. IC Role / Device Role / Timing Role: Synchronous memory node synchronized to fabric clock domain; CQ/̅CQ signals enable precise latch timing for downstream SerDes interfaces. Use Value: Echo clock outputs (CQ/̅CQ) reduce timing uncertainty to <150 ps, enabling reliable capture at 500 MT/s without complex deskew circuits. |
| FPGA-Accelerated Compute Cache | Telecom Baseband Processing |
|
Use Scenario: Serving as low-latency scratchpad memory for FPGA-based AI inference accelerators requiring rapid weight/data fetch. IC Role / Device Role / Timing Role: High-bandwidth off-chip memory tightly coupled to FPGA's memory-mapped AXI interface; /R and /W controlled by FPGA state machine. Use Value: 1.5-cycle read latency and separate read/write data buses cut memory stall cycles by >40% versus asynchronous SRAM in compute-bound kernels. |
Use Scenario: Buffering IQ samples between digital front-end (DFE) and channel processing blocks in 4G/5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Deterministic latency SRAM interfacing with DSP cores and high-speed ADC/DAC controllers; ZQ calibration maintains signal integrity across wide temperature range. Use Value: Industrial-grade thermal rating (−40°C to +85°C) and VDDQ=1.5 V compatibility ensure stable operation in outdoor macrocell enclosures with minimal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18-400BZXC | 72-Mbit QDR-II+ (not QDR-II), 400 MHz max, 2.0-cycle latency, no C/̅C pins - uses K/̅K for output timing only. | Higher bandwidth but requires redesign of echo clock routing; lacks C/̅C flexibility for fine-grained output timing tuning. | Select when system demands >300 MHz operation and can accommodate QDR-II+ timing model and pinout differences. |
| AS7C3256A-15JCIN | Asynchronous 256-Kbit × 36 SRAM, 15 ns access, 3.3 V supply - no burst, no DDR, no echo clocks. | Lower bandwidth and higher latency; suitable only for non-critical control-plane buffers where deterministic timing is not required. | Select only for legacy board refresh where QDR interface redesign is prohibited and performance budget allows ≥10× latency penalty. |
Compared with CY7C2663KV18-400BZXC and AS7C3256A-15JCIN, the R1Q2A7236ABG-40IA1 uniquely balances 250 MHz QDR-II performance with C/̅C timing control and industrial temperature support-making it optimal for new designs targeting robust, medium-bandwidth packet buffering without QDR-II+ ecosystem lock-in.
Availability
R1Q2A7236ABG-40IA1 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, FPGA-accelerated compute cache, and telecom baseband processing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1Q2A7236ABG-40IA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1Q2A7236ABG-40IA1 belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-throughput, low-latency data buffering in networking and communications equipment where deterministic timing and industrial reliability are mandatory.
FAQ
What is the maximum operating frequency of the R1Q2A7236ABG-40IA1?
The R1Q2A7236ABG-40IA1 is rated for a maximum operating frequency of 250 MHz, corresponding to a minimum cycle time of 4.0 ns. This enables 500 MT/s effective data transfer rates on both read and write ports using double-data-rate operation. The device meets this specification under industrial temperature conditions (−40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V.
Does the R1Q2A7236ABG-40IA1 support independent read and write operations?
Yes, the R1Q2A7236ABG-40IA1 supports fully concurrent read and write operations through physically separate data ports (D0–D35 for input, Q0–Q35 for output) and independent control (/R and /W). This allows simultaneous access without arbitration delay-critical for real-time packet buffering and switch fabric applications where back-to-back read/write transactions occur continuously.
How does the ZQ pin function on the R1Q2A7236ABG-40IA1?
The ZQ pin on the R1Q2A7236ABG-40IA1 serves as the output impedance calibration input. When connected to a precision resistor (RQ) to ground, it programs the Q and CQ output driver impedance to 0.2 × RQ. For example, a 250 Ω resistor yields ~50 Ω output impedance. This eliminates need for external series termination and improves signal integrity on high-speed traces without requiring layout changes.
What is the read latency of the R1Q2A7236ABG-40IA1 and how is it implemented?
The R1Q2A7236ABG-40IA1 has a fixed read latency of 1.5 clock cycles (L15), meaning the first valid output word appears 1.5 K-clock periods after the /R signal is asserted. This latency is implemented via internal pipelining synchronized to the K/̅K clock pair and is guaranteed across voltage, temperature, and process corners-enabling accurate timing budgeting in synchronous systems.
Can the R1Q2A7236ABG-40IA1 operate without the DLL/PLL enabled?
Yes, the R1Q2A7236ABG-40IA1 can operate with DLL/PLL disabled by holding /DOFF low. In this mode, the device functions reliably down to DC, bypassing the DLL/PLL for stable low-frequency operation (<120 MHz). However, echo clock (CQ/̅CQ) alignment degrades, and the data valid window narrows-so DLL/PLL should remain enabled for 250 MHz operation to maintain timing margins.
R1Q2A7236ABG-40IA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1Q2A7236ABG-40IA1 FAQ
1.How can I place an order for R1Q2A7236ABG-40IA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1Q2A7236ABG-40IA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1Q2A7236ABG-40IA1 reliable?
The price and inventory of R1Q2A7236ABG-40IA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1Q2A7236ABG-40IA1 is usually 5 days.
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5.How can I obtain technical support or documentation for R1Q2A7236ABG-40IA1?
For technical support, including R1Q2A7236ABG-40IA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1Q2A7236ABG-40IA1 requirements.
6.How does Aetrix verify that R1Q2A7236ABG-40IA1 is sourced from the original manufacturer or authorized distributors?
All R1Q2A7236ABG-40IA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1Q2A7236ABG-40IA1 meets industry standards.
7.What is the process for return or replacement of R1Q2A7236ABG-40IA1?
All R1Q2A7236ABG-40IA1 units undergo pre-shipment inspection (PSI). If there is an issue with R1Q2A7236ABG-40IA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1Q2A7236ABG-40IA1 part is unused and in its original packaging.
Return procedure for R1Q2A7236ABG-40IA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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