Renesas R1Q2A7236ABG-40IB1
- Part No.:
- R1Q2A7236ABG-40IB1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1Q2A7236ABG-40IB1.pdf
- Description:
- 72-MB DDR II+ SRAM (2M X 36-BIT)
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Product details
Overview
R1Q2A7236ABG-40IB1 from Renesas Electronics is a 72-Mbit QDR™ II synchronous SRAM with 2,097,152-word × 36-bit organization, fabricated in advanced CMOS using full six-transistor memory cells. It operates at 250 MHz (4.0 ns cycle time), supports 1.8 V core and 1.4–1.5 V I/O supplies, and delivers concurrent read/write via separate ports - ideal for high-bandwidth packet buffering in network switches and routers.
For engineers reviewing the R1Q2A7236ABG-40IB1 datasheet, R1Q2A7236ABG-40IB1 pinout, R1Q2A7236ABG-40IB1 application, or R1Q2A7236ABG-40IB1 equivalent, this page provides verified timing parameters, FBGA-165 pin mapping, burst-2 DDR operation, HSTL I/O compliance, and industrial-temperature (-40°C to +85°C) qualification - all confirmed from Renesas Document R10DS0164EJ0011 Rev. 0.11.
Technical Context
This device implements true quad data rate architecture with dual clock pairs: K and /K register address/control on rising edges, while C and /C (or K and /K when C/C tied high) precisely time output data delivery. Its internal burst counter and self-timed write control eliminate external sequencing logic.
The memory integrates DLL/PLL circuitry for wide output data valid windows, programmable output impedance via ZQ calibration, and JTAG 1149.1 test access. All inputs are synchronous to K, and read latency is fixed at 1.5 cycles (L15), enabling deterministic timing in high-speed backplane interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2,097,152 words × 36 bits) - enables single-chip 256 KB line buffers in L2/L3 cache hierarchies. |
| Max Clock Frequency | 250 MHz (4.0 ns cycle time) - supports 1 Gbps per data pin in burst-2 mode, matching OC-48/STM-16 line rates. |
| Supply Voltages | VDD = 1.7–1.9 V (core), VDDQ = 1.4–1.5 V (I/O) - ensures compatibility with 1.5 V HSTL-18 signaling and low-power system design. |
| Read Latency | 1.5 cycles (L15) - guarantees first valid output data on second rising edge of C/C after /R assertion, simplifying timing closure. |
| Burst Length | 2-word burst - minimizes bus turnaround overhead and aligns with common packet header sizes in telecom applications. |
| Operating Temperature | −40°C to +85°C (industrial grade) - qualified for deployment in uncontrolled ambient environments like base station cabinets. |
| Package | 165-pin FBGA (13 mm × 15 mm × 1.4 mm, BB marking) - matches JEDEC MO-270AB standard for automated assembly and thermal management. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 0.8 mm ball pitch, Pb-free (RoHS 6/6 compliant), marked "BB" per Renesas part numbering convention.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Input clock pair | Registers address, /R, /W, and byte-write controls on rising edges; defines all synchronous timing boundaries. |
| C, /C | Output clock pair | Controls output data timing reference (first/third data on /C rise, second/fourth on C rise); may be tied high to use K//K instead. |
| /R, /W | Synchronous command inputs | /R initiates burst read; /W initiates burst write; both sampled on K rising edge and ignored on next K edge. |
| /BW0–/BW3 | Byte write enable inputs | Selects 9-bit subwords for write masking (e.g., /BW0=L enables D0–D8; /BW1=L enables D9–D17) - supports partial writes without read-modify-write. |
| D0–D35 | Data input bus | 36-bit wide synchronous input port; data registered on both K and /K rising edges during write cycles. |
| Q0–Q35 | Data output bus | 36-bit wide synchronous output port; data aligned to C/C or K//K edges per read latency setting. |
| CQ, /CQ | Echo clock outputs | Tightly matched to Q outputs; used as data-valid strobes in source-synchronous capture (e.g., FPGA IDELAYCTRL alignment). |
| ZQ | Impedance calibration input | Connects to precision resistor (250 Ω typical) to set output driver impedance to 0.2×RQ - critical for HSTL bus signal integrity. |
| /DOFF | DLL/PLL disable | Low disables DLL/PLL for stable low-frequency operation (<120 MHz); high enables DLL/PLL for full-speed timing margin. |
| TMS, TDI, TCK, TDO | JTAG 1149.1 interface | Supports boundary scan testing and in-system programming; TCK must tie to VSS if unused. |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Independent D and Q buses allow simultaneous access - eliminates arbitration delay in pipeline buffers and FIFOs. |
| HSTL Class I I/O | 1.5 V VDDQ-compatible interface with programmable drive strength ensures clean signal integrity on 50–75 Ω PCB traces. |
| Two-Tick Burst Operation | Fixed 2-word burst reduces address bus activity by 50% vs. single-word access - lowers controller complexity and power. |
| On-Die DLL/PLL | Provides >200 ps data valid window at 250 MHz - relaxes PCB trace length matching requirements for high-speed routing. |
| Industrial Temperature Range | −40°C to +85°C operation validated per R1Q2A7236ABG-40IB1 marking - supports deployment in outdoor telecom infrastructure. |
| JTAG 1149.1 Test Access | Full boundary scan support enables production test coverage and debug visibility without physical probe points. |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between ingress parser and egress scheduler logic. Use Value: Concurrent read/write enables real-time header modification and timestamp insertion without stalling the data path at 10 Gbps line rates. |
Use Scenario: Interfacing between ASIC-based switch fabric controllers and SerDes PHYs in modular chassis systems. IC Role / Device Role / Timing Role: Synchronous timing bridge providing deterministic 1.5-cycle read latency and burst-aligned data staging. Use Value: CQ/CQ echo clocks simplify FPGA-based capture logic, reducing setup/hold violations in 250 MHz source-synchronous links. |
| Baseband Processing Memory | Test Equipment Pattern Memory |
|
Use Scenario: Holding channel estimation coefficients and FFT intermediate results in LTE/5G remote radio units (RRUs). IC Role / Device Role / Timing Role: Low-latency, high-bandwidth scratchpad memory accessed by DSP cores and hardware accelerators. Use Value: 1.8 V core supply and industrial temperature rating ensure reliable operation in thermally constrained outdoor enclosures. |
Use Scenario: Storing stimulus/response patterns for high-speed digital I/O validation in ATE platforms operating up to 500 Mbps per pin. IC Role / Device Role / Timing Role: Deterministic-access memory delivering synchronized bursts to parallel pin electronics (PE) drivers. Use Value: Programmable ZQ termination and HSTL I/O guarantee <±50 mV noise margin across 32-bit wide parallel test vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18-400BZXC | Same 72-Mbit ×36, 250 MHz, but uses 165-ball FBGA (13×15 mm) with identical pinout and HSTL I/O - Cypress QDR II+ variant with ODT support. | Includes on-die termination (ODT) for simplified board-level termination; requires ZQ resistor and ODT pin configuration not needed for R1Q2A7236ABG-40IB1. | Choose when system-level signal integrity demands ODT and layout allows minor control pin reassignment. |
| AS7C372000B-25PCN | 72-Mbit ×36 QDR II SRAM, 250 MHz, 165-ball FBGA, but rated only for commercial temperature (0°C to +70°C) and lacks JTAG test port. | No industrial temp rating or IEEE 1149.1 support - unsuitable for outdoor or mission-critical embedded deployments. | Consider only for cost-sensitive, indoor, non-mission-critical applications where testability and extended temperature are not required. |
Compared with CY7C2663KV18-400BZXC and AS7C372000B-25PCN, the R1Q2A7236ABG-40IB1 offers guaranteed industrial temperature operation and full JTAG testability without ODT complexity - making it optimal for telecom infrastructure where reliability and debug access outweigh marginal BOM cost differences.
Availability
R1Q2A7236ABG-40IB1 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric interface, baseband processing memory, and test equipment pattern memory requiring stable component supply across long product lifecycles.
Supply support for R1Q2A7236ABG-40IB1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1Q2A7236ABG-40IB1 belongs to Renesas' QDR™ II SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in telecom and networking equipment where low latency and concurrent access are mandatory.
FAQ
What is the maximum operating frequency of the R1Q2A7236ABG-40IB1?
The R1Q2A7236ABG-40IB1 is rated for a maximum clock frequency of 250 MHz, corresponding to a 4.0 ns minimum cycle time. This specification is validated under industrial temperature conditions (−40°C to +85°C) and 1.8 V ±0.1 V VDD, with timing margins confirmed in Renesas Document R10DS0164EJ0011 Rev. 0.11.
Does the R1Q2A7236ABG-40IB1 support burst-4 operation?
No, the R1Q2A7236ABG-40IB1 supports only burst-2 operation, as defined by its QDR II B2 designation in the part number. Burst length is fixed in hardware and cannot be configured; burst-4 capability is reserved for QDR II+ (e.g., R1QA-series) and later generations.
What is the purpose of the ZQ pin on the R1Q2A7236ABG-40IB1?
The ZQ pin on the R1Q2A7236ABG-40IB1 serves as an impedance calibration input. When connected to a precision 250 Ω resistor to ground, it sets the output driver impedance to 50 Ω (0.2 × RQ), ensuring HSTL signal integrity on controlled-impedance PCB traces - a requirement explicitly specified in the DC Characteristics table of the datasheet.
Can the R1Q2A7236ABG-40IB1 operate without the C and /C clocks?
Yes, the R1Q2A7236ABG-40IB1 can operate without external C and /C clocks: tying both high forces the device to use K and /K as output timing references instead. This single-clock mode is fully supported and documented in the Power-up and Initialization Sequence section (Page 9) of R10DS0164EJ0011.
Is the R1Q2A7236ABG-40IB1 pin-compatible with other members of the R1Q2A72xx series?
No, the R1Q2A7236ABG-40IB1 is not pin-compatible with R1Q2A7218ABB or R1Q2A7209ABB variants. While all share the same 165-ball FBGA package, their D/Q pin allocations differ significantly - e.g., R1Q2A7236ABG-40IB1 uses D0–D35/Q0–Q35, whereas the ×18 variant uses only D0–D17/Q0–Q17, leaving higher-numbered pins as NC.
R1Q2A7236ABG-40IB1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1Q2A7236ABG-40IB1 FAQ
1.How can I place an order for R1Q2A7236ABG-40IB1 through Aetrix?
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7.What is the process for return or replacement of R1Q2A7236ABG-40IB1?
All R1Q2A7236ABG-40IB1 units undergo pre-shipment inspection (PSI). If there is an issue with R1Q2A7236ABG-40IB1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1Q2A7236ABG-40IB1 part is unused and in its original packaging.
Return procedure for R1Q2A7236ABG-40IB1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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