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Renesas R1Q3A7218ABB-33IA0

Part No.:
R1Q3A7218ABB-33IA0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1Q3A7218ABB-33IA0.pdf
Description:
STANDARD SRAM, 4MX18, 0.45NS
Quantity:
Payment:
Payment
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Inventory:3,947

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Product details

Overview

R1Q3A7218ABB from Renesas Electronics is a 4,194,304-word × 18-bit (72 Mbit) synchronous Quad Data Rate II (QDR-II) SRAM with burst-of-four operation, 1.8 V core supply (VDD), 1.4–1.5 V I/O supply (VDDQ), and 165-pin FBGA (13 × 15 × 1.4 mm) packaging. It features dual input clocks (K and /K), echo clocks (CQ and /CQ), HSTL I/O, programmable output impedance, and JTAG 1149.1 test access - designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the R1Q3A7218ABB datasheet, R1Q3A7218ABB pinout, R1Q3A7218ABB application, or R1Q3A7218ABB equivalent, this device requires attention to DDR timing alignment, DLL/PLL enable/disable via /DOFF, ZQ impedance calibration, burst address sequencing, and industrial-temperature (−40°C to +85°C) operation under stable 1.8 V/1.5 V dual-rail conditions.

Technical Context

This QDR-II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral logic with an internal burst counter. All inputs-including SA, /R, /W, and /BWx-are registered on the rising edges of K and /K, enabling precise double-data-rate timing control without external latches.

It supports concurrent read/write ports with 100% bus utilization, employs echo clocks CQ and /CQ for data capture synchronization, and includes clock-stop capability with microsecond-scale restart. The device implements four-tick burst addressing and internally self-timed write control to reduce address bus frequency and simplify depth expansion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4,194,304 words × 18 bits)
Interface Type Quad Data Rate II (QDR-II) with separate read/write data paths and burst-of-four operation
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.5 V (I/O buffer rail)
Timing Reference Dual input clocks K and /K register all inputs; CQ and /CQ provide edge-aligned echo clocks for data capture
Package 165-ball plastic FBGA, 13 mm × 15 mm × 1.4 mm, Pb-free (BB suffix), industrial temperature range (−40°C to +85°C)
Read Latency 1.5 clock cycles (L15 latency mode), aligned to /C rising edge for first/third data, C rising edge for second/fourth data
Output Standard HSTL Class I compatible I/O with user-programmable output impedance via ZQ pin termination

Pinout & Package

Package: 165-pin Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant Pb-free construction (BB marking).

Pin/Terminal Circuit Role Design Meaning
/R Synchronous Read Enable Active-low signal that registers SA on next K rising edge and initiates burst read; takes precedence over /W when both asserted
/W Synchronous Write Enable Active-low signal that registers SA and initiates burst write; ignored if /R is also low on same K edge
K, /K Primary Input Clock Pair Registers all inputs (SA, /R, /W, /BWx, Dn) on rising edges; phase-aligned 180° differential pair required for setup/hold compliance
CQ, /CQ Output Echo Clocks Edge-matched to Qn outputs; used as data-valid strobes in high-speed systems; remain active during tri-state
ZQ Output Impedance Calibration Input Connected to precision resistor to ground (RQ ≈ 250 Ω typical) to set Q/CQ output impedance to 0.2 × RQ
/DOFF DLL/PLL Disable Low disables DLL/PLL for stable low-frequency (<120 MHz) operation; high enables DLL/PLL for wide data valid window
Q0–Q17 Data Outputs 18-bit synchronous burst read outputs; aligned to CQ and /CQ (or K and /K if C/C are tied high)
D0–D17 Data Inputs 18-bit synchronous burst write inputs; registered on rising edges of both K and /K
SA[0:18] Synchronous Address Inputs 19-bit address bus registered on K rising edge; concatenated with internal LSBs to generate burst addresses A, A+1, A+2, A+3
TMS, TDI, TCK, TDO JTAG 1149.1 Test Interface IEEE 1149.1 compliant boundary-scan support; TCK must be tied to VSS if unused

Key Features

Feature Design Value
Four-tick burst addressing Reduces effective address bus frequency by 4×; eliminates need for external burst counters or address sequencers
Separate read/write data ports Enables true concurrent read and write operations on same clock cycle - critical for full-duplex packet buffering
Programmable output impedance ZQ pin allows system-level impedance matching to PCB trace (e.g., 50 Ω single-ended) without external resistors
DLL/PLL with /DOFF control Enables wide output data valid window at high frequencies (>120 MHz); bypass mode ensures stability at lower speeds
JTAG 1149.1 test access Supports IEEE-compliant boundary-scan testing and debug without requiring additional test pads or probes
Industrial temperature grade Rated for −40°C to +85°C ambient operation - validated for carrier-grade networking and industrial control environments

Applications

Network Packet Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/L3 Ethernet switches operating at 10 Gbps line rate.

IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM serving as shared buffer memory with simultaneous read (forwarding engine) and write (ingress parser) access.

Use Value: 72 Mbit density and 333 MHz max clock (3 ns cycle time) deliver >2.4 Gbps sustained bandwidth per port - sufficient for full-line-rate buffering with zero wait states.

Use Scenario: Interconnecting multiple ASICs in modular chassis-based routers using a centralized crossbar switch fabric.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as distributed queue memory for cell/packet reordering and arbitration logic.

Use Value: Burst-of-four operation and echo clocks (CQ, /CQ) eliminate timing skew between data and strobe, enabling reliable capture at 666 MT/s effective data rate.

Telecom Line Card Buffering Real-Time Video Processing Frame Store

Use Scenario: Temporary storage of SONET/SDH ATM cells or OTN frames in optical transport network (OTN) line cards.

IC Role / Device Role / Timing Role: High-reliability SRAM providing deterministic latency and error-free burst transfers between framer and mapper ICs.

Use Value: Industrial temperature rating and 1.8 V core supply ensure stable operation in thermally constrained telecom chassis with minimal power dissipation (820 mA IDD @ 333 MHz).

Use Scenario: Frame buffering between video encoder/decoder pipelines in broadcast-grade HD/4K video processing equipment.

IC Role / Device Role / Timing Role: Dual-port memory supporting simultaneous write (sensor interface) and read (compression engine) with sub-ns timing margin.

Use Value: HSTL I/O and programmable output impedance maintain signal integrity across long PCB traces to FPGA-based video processors, reducing eye diagram closure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C17218BV25 Same 72 Mbit ×18 organization, 25 ns cycle time (40 MHz), 208-pin TQFP package, 3.3 V I/O, no ZQ or /DOFF Limited to commercial temperature (0°C to +70°C); lacks DLL/PLL and impedance tuning - unsuitable for >100 MHz systems Select only for cost-sensitive, low-frequency legacy designs where board space permits larger TQFP and thermal margin is ample.
AS7C37218B-333BIN 72 Mbit ×18 QDR-II+, 333 MHz, 165-pin FBGA, 1.8 V core, but adds ODT and QVLD pins; L20 latency (2.0 cycles) Higher latency increases minimum read turnaround time; ODT simplifies termination but requires additional control logic Prefer for new designs requiring on-die termination and tighter system-level noise control - verify timing budget accommodates 0.5-cycle latency increase.

Compared with CY7C17218BV25 and AS7C37218B-333BIN, the R1Q3A7218ABB delivers optimal balance of industrial-grade reliability, DLL/PLL-enabled high-speed timing margin, and ZQ-calibrated signal integrity - making it the preferred choice for carrier-class infrastructure where thermal robustness and 333 MHz sustained bandwidth are mandatory.

Availability

R1Q3A7218ABB is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and real-time video processing frame store applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for R1Q3A7218ABB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1Q3A7218ABB belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-throughput, low-latency data buffering in carrier-grade networking and telecom equipment where deterministic timing and thermal resilience are critical.

FAQ

What is the maximum operating frequency and corresponding cycle time for the R1Q3A7218ABB?

The R1Q3A7218ABB is rated for a maximum operating frequency of 333 MHz, corresponding to a minimum cycle time of 3.00 ns. This specification is confirmed in the DC Characteristics table on page 15 of the R10DS0165EJ0011 datasheet revision 0.11, under the "R1Q3A7218ABB" row and "333" column. Operation above this frequency violates AC timing parameters and may result in data corruption or metastability.

Does the R1Q3A7218ABB support industrial temperature range, and how is this indicated in the part number?

Yes, the R1Q3A7218ABB supports the industrial temperature range of −40°C to +85°C. This is explicitly encoded in the suffix "I" within the full orderable part number - for example, R1Q3A7218ABB-33IA0 indicates "I" for industrial grade, "A0" for assembly code, and "33" for the 333 MHz speed bin. The datasheet confirms R1Q*A series supports both commercial and industrial grades via the "I" suffix.

How is output impedance calibrated on the R1Q3A7218ABB, and what resistor value is recommended for ZQ?

Output impedance on the R1Q3A7218ABB is calibrated via the ZQ pin, which must be terminated to ground through a precision resistor (RQ). The datasheet specifies a typical RQ value of 250 Ω to achieve nominal 50 Ω output impedance (Q and CQ outputs set to 0.2 × RQ). Total external capacitance on the ZQ ball must remain below 7.5 pF to ensure accurate calibration during power-up initialization.

Can the R1Q3A7218ABB operate without using the DLL/PLL, and how is this configured?

Yes, the R1Q3A7218ABB can operate without the DLL/PLL by asserting /DOFF low during power-up initialization. When /DOFF is low, the DLL/PLL is bypassed, enabling stable operation down to DC (subject to minimum frequency constraints). This mode is intended for systems operating below 120 MHz or requiring deterministic, jitter-insensitive timing - though it sacrifices the wide data valid window provided by active DLL/PLL.

What is the function of the C and /C pins on the R1Q3A7218ABB, and are they required for operation?

The R1Q3A7218ABB does not include dedicated C and /C pins. As confirmed in the Pin Descriptions (page 6), the R1Q3 series uses K and /K as both input registration clocks *and* output reference clocks - eliminating the need for separate C/C pins. The datasheet notes that C and /C are present only in R1Q2/R1Q4/R1Q5 series; for R1Q3A7218ABB, K and /K serve dual timing roles, simplifying clock routing.

R1Q3A7218ABB-33IA0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1Q3A7218ABB-33IA0 FAQ

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The price and inventory of R1Q3A7218ABB-33IA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1Q3A7218ABB-33IA0 is usually 5 days.

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All R1Q3A7218ABB-33IA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1Q3A7218ABB-33IA0 meets industry standards.

7.What is the process for return or replacement of R1Q3A7218ABB-33IA0?

All R1Q3A7218ABB-33IA0 units undergo pre-shipment inspection (PSI). If there is an issue with R1Q3A7218ABB-33IA0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1Q3A7218ABB-33IA0 part is unused and in its original packaging.

Return procedure for R1Q3A7218ABB-33IA0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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