Renesas R1Q3A7236ABA-33IB0
- Part No.:
- R1Q3A7236ABA-33IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1Q3A7236ABA-33IB0.pdf
- Description:
- STANDARD SRAM, 2MX36
- Quantity:
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Inventory:509
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Product details
Overview
R1Q3A7236ABA-33IB0 from Renesas Electronics is a 72-Mbit QDR™ II SRAM with 2,097,152-word × 36-bit organization, fabricated in advanced CMOS using full six-transistor memory cells. It operates at 333 MHz (3.0 ns cycle time), supports 1.8 V core and 1.4–1.5 V I/O supply, features synchronous quad data rate burst-of-4 operation, and is packaged in a 165-pin 13×15 mm FBGA. It serves as high-bandwidth buffer memory in network packet processors and telecom line cards.
For engineers reviewing the R1Q3A7236ABA-33IB0 datasheet, R1Q3A7236ABA-33IB0 pinout, R1Q3A7236ABA-33IB0 application, or R1Q3A7236ABA-33IB0 equivalent, key selection criteria include its 333 MHz max frequency, 1.5-cycle read latency, HSTL I/O compatibility, burst-of-4 DDR interface, and industrial temperature range (−40°C to +85°C).
Technical Context
This device implements a true synchronous dual-port architecture with independent read and write data paths, controlled by differential clock pairs K/̅K for address/control registration and C/̅C (or K/̅K when C/̅C tied high) for output timing. Its internal burst counter and self-timed write control eliminate external address sequencing logic.
The R1Q3A7236ABA-33IB0 integrates DLL/PLL circuitry for data valid window extension and supports programmable output impedance via ZQ calibration. It includes JTAG 1149.1 test access and clock-stop capability with microsecond restart - critical for power-managed systems requiring rapid resumption of high-speed memory access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2,097,152 words × 36 bits) - enables compact, high-throughput buffering without depth expansion. |
| Max Clock Frequency | 333 MHz (3.0 ns cycle time) - delivers 2.66 GB/s peak bandwidth in burst-of-4 mode. |
| Read Latency | 1.5 cycles - minimizes pipeline stalls in real-time packet forwarding engines. |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.5 V (I/O) - ensures low-power operation while maintaining signal integrity on HSTL buses. |
| Operating Temperature | −40°C to +85°C - qualified for industrial and telecom infrastructure environments. |
| Package | 165-pin FBGA (13 mm × 15 mm × 1.4 mm) - compatible with standard surface-mount assembly and thermal management for high-density PCBs. |
| Burst Length | 4-word burst - reduces address bus frequency by 75% versus single-word access, easing controller design. |
Pinout & Package
Package: 165-pin plastic FBGA (13 × 15 × 1.4 mm), RoHS-compliant, industrial-grade marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Input clock pair | Registers all address and control inputs on rising edges; defines timing reference for input data sampling. |
| C, /C | Output clock pair | Controls output data timing (first/third words referenced to /C, second/fourth to C); may be tied high to use K/̅K instead. |
| SA[0:18] | Synchronous address inputs | 19-bit address bus registered on K/̅K rising edges; supports 2M-word addressing with internal LSB generation for burst sequence. |
| /R, /W | Read/write command inputs | Active-low synchronous commands latched on K rising edge; read takes precedence over concurrent write requests. |
| /BW0–/BW3 | Byte write enable inputs | Four independent byte masks for 36-bit data bus - enables partial writes without read-modify-write overhead. |
| D0–D35 | Data inputs | 36-bit parallel write data path, sampled across two consecutive K/̅K rising edges (DDR). |
| Q0–Q35 | Data outputs | 36-bit parallel read data path, delivered synchronized to C/̅C (or K/̅K) rising edges with 1.5-cycle latency. |
| CQ, /CQ | Echo clock outputs | Tightly matched to Q outputs - provides deterministic data valid strobes for high-speed capture in FPGA/ASIC receivers. |
| ZQ | Impedance calibration input | Connects to precision resistor to ground (RQ ≈ 250 Ω) to calibrate output driver impedance to system bus (0.2 × RQ). |
| /DOFF | DLL/PLL disable input | Low disables DLL/PLL for stable sub-120 MHz operation; high enables full-speed timing compensation. |
| ODT | On-die termination control | Not present on R1Q3A7236ABA-33IB0 - this is QDR II (not QDR II+), so ODT functionality is absent. |
| VDD, VDDQ, VSS, VREF | Power and reference supplies | Dedicated 1.8 V core, isolated 1.5 V I/O, ground, and HSTL reference (VREF ≈ VDDQ/2) - decoupling required per datasheet layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Quad Data Rate (QDR) interface | Simultaneous 36-bit read and write at 333 MHz - eliminates bus contention and doubles effective throughput vs. single-data-rate SRAM. |
| HSTL Class I I/O | Ensures signal integrity at >300 MHz with controlled slew and termination compatibility for backplane and high-speed interconnects. |
| Programmable output impedance | ZQ calibration enables precise 25–35 Ω driver matching to PCB trace impedance - reduces reflections and improves eye margin. |
| 1.5-cycle read latency | Minimizes pipeline bubbles in pipelined datapaths (e.g., network search engines), enabling deterministic 3-cycle read-to-use timing. |
| JTAG 1149.1 test access | Supports boundary-scan testing and debug in-system without additional test fixtures - critical for high-reliability telecom modules. |
| Industrial temperature grade | Rated for −40°C to +85°C operation with validated DC/AC parameters - suitable for uncooled base station and router deployments. |
Applications
| Network Packet Processors | Telecom Line Cards |
|---|---|
Use Scenario: Storing and forwarding variable-length IP packets in multi-gigabit line-rate switches. IC Role / Device Role / Timing Role: High-speed buffer memory interfacing directly to ASIC packet engines via HSTL bus, operating at 333 MHz with burst-of-4 reads/writes. Use Value: Eliminates external FIFOs and simplifies timing closure by providing simultaneous read/write ports with deterministic 1.5-cycle latency. |
Use Scenario: Buffering SONET/SDH frame payloads in OC-192 and OTU2 transport equipment. IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store between framer and switch fabric, handling 10 Gbps line rates with jitter tolerance. Use Value: Clock-stop capability allows dynamic power gating during idle periods while enabling μs-scale restart - reducing average power in bursty traffic. |
| High-Performance Test Equipment | Radar Signal Processing |
Use Scenario: Capturing and analyzing high-speed serial data streams in protocol analyzers and BERTs. IC Role / Device Role / Timing Role: Real-time acquisition buffer synchronizing to recovered clock domains, supporting deep capture depths with zero-gap streaming. Use Value: Independent read/write ports allow continuous write while background processing reads out captured segments - no dead time between acquisitions. |
Use Scenario: Storing intermediate FFT and beamforming coefficients in phased-array radar front-ends. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for DSP co-processors, accessed concurrently by multiple compute units via shared HSTL bus. Use Value: Burst-of-4 addressing reduces address bus width and routing complexity - critical for minimizing layer count in RF-heavy PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-333BZC | 72-Mbit QDR II SRAM, same 333 MHz speed, 165-pin FBGA, but rated only for commercial temp (0°C to +70°C). | Lacks industrial temperature qualification - unsuitable for outdoor or uncooled telecom hardware. | Select only for cost-sensitive, temperature-controlled lab or enterprise equipment where ambient stays within 0–70°C. |
| IDT72T36130L5PF | 72-Mbit QDR II+ SRAM with ODT support, 333 MHz, but uses 176-pin FBGA (15×17 mm) and requires different power sequencing. | Includes on-die termination and higher drive strength - better for long traces but incompatible footprint and layout. | Choose only if ODT is mandatory and board redesign is acceptable; otherwise, R1Q3A7236ABA-33IB0 offers drop-in replacement for legacy QDR II designs. |
Compared with CY7C2665KV18-333BZC and IDT72T36130L5PF, the R1Q3A7236ABA-33IB0 uniquely combines industrial temperature rating, pin-compatible 165-pin FBGA packaging, and proven reliability in deployed telecom infrastructure - making it the preferred choice for field-deployed systems requiring long-term availability and extended environmental tolerance.
Availability
R1Q3A7236ABA-33IB0 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, and high-performance test equipment requiring stable component supply across extended product lifecycles.
Supply support for R1Q3A7236ABA-33IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1Q3A7236ABA-33IB0 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and communications equipment where deterministic timing and industrial reliability are essential.
FAQ
What is the maximum operating frequency of the R1Q3A7236ABA-33IB0?
The R1Q3A7236ABA-33IB0 is rated for a maximum clock frequency of 333 MHz, corresponding to a minimum cycle time of 3.0 ns. This speed is guaranteed across the full industrial temperature range (−40°C to +85°C) and under specified voltage conditions (VDD = 1.8 V ±0.1 V, VDDQ = 1.5 V). The device achieves this performance using differential clock inputs (K/̅K and C/̅C) and internal DLL/PLL timing compensation.
Does the R1Q3A7236ABA-33IB0 support on-die termination (ODT)?
No, the R1Q3A7236ABA-33IB0 does not support on-die termination. It belongs to the QDR II generation (not QDR II+), and the ODT pin is absent from its pinout. Instead, the device relies on external termination and ZQ-calibrated output drivers for impedance matching. This is confirmed by the absence of the ODT pin in the official pin arrangement diagram and the "No" entry under "ODT" in the product lineup table on page 15 of the datasheet.
What is the read latency of the R1Q3A7236ABA-33IB0 and how does it affect system timing?
The R1Q3A7236ABA-33IB0 has a fixed read latency of 1.5 clock cycles. This means that valid output data appears 1.5 cycles after the /R signal is asserted on the rising edge of K. In practical terms, for a 333 MHz clock (3.0 ns period), this translates to a 4.5 ns delay from command to first data word - enabling tight pipeline integration in ASIC/FPGA-based datapaths without added wait states.
Can the R1Q3A7236ABA-33IB0 operate with only the K/̅K clocks, or are C/̅C required?
The R1Q3A7236ABA-33IB0 can operate using only the K/̅K clocks: C and /C pins may be tied high (to VDDQ) to force the device to use K/̅K as the output timing reference. This simplifies clock distribution in systems lacking dedicated output clocks. When C/̅C are tied high, output data remains synchronized to K/̅K rising edges, preserving full functionality including echo clocks CQ/̅CQ.
What package type and dimensions does the R1Q3A7236ABA-33IB0 use?
The R1Q3A7236ABA-33IB0 uses a 165-pin plastic FBGA package measuring 13 mm × 15 mm × 1.4 mm (body size), with ball pitch of 0.8 mm. The "BB" suffix in the part number explicitly denotes the 13×15 mm FBGA variant, and the "I" in "33IB0" confirms industrial temperature grade. This package is RoHS-compliant and designed for standard reflow soldering processes.
R1Q3A7236ABA-33IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1Q3A7236ABA-33IB0 FAQ
1.How can I place an order for R1Q3A7236ABA-33IB0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1Q3A7236ABA-33IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of R1Q3A7236ABA-33IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1Q3A7236ABA-33IB0 is usually 5 days.
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6.How does Aetrix verify that R1Q3A7236ABA-33IB0 is sourced from the original manufacturer or authorized distributors?
All R1Q3A7236ABA-33IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1Q3A7236ABA-33IB0 meets industry standards.
7.What is the process for return or replacement of R1Q3A7236ABA-33IB0?
All R1Q3A7236ABA-33IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1Q3A7236ABA-33IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1Q3A7236ABA-33IB0 part is unused and in its original packaging.
Return procedure for R1Q3A7236ABA-33IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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