Renesas R1Q3A7236ABB-33IA0

Overview

R1Q3A7236ABB from Renesas Electronics is a 72-Mbit QDR™ II synchronous SRAM with 2,097,152-word × 36-bit organization, fabricated in advanced CMOS using full six-transistor memory cells. It operates at 1.8 V core (VDD) and 1.4–1.5 V I/O (VDDQ), supports 333 MHz max frequency (3.0 ns cycle time), features four-tick burst, dual-clock DDR timing (K/̅K and C/̅C), and is packaged in a 165-pin 13×15 mm FBGA. It serves high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the R1Q3A7236ABB datasheet, R1Q3A7236ABB pinout, R1Q3A7236ABB application, or R1Q3A7236ABB equivalent, key selection criteria include its QDR-II burst architecture, 1.5-cycle read latency, HSTL I/O compatibility, programmable output impedance via ZQ, and industrial temperature range (−40°C to +85°C).

Technical Context

This device implements a true quad data rate interface: two independent data ports enable concurrent read/write operations, while synchronized address/control latching on K/̅K rising edges ensures precise DDR timing. The integrated burst counter and self-timed write control eliminate external sequencing logic.

It uses separate input clocks (K/̅K) for address/control registration and output clocks (C/̅C) to minimize skew; echo clocks (CQ/̅CQ) provide deterministic data valid windows. DLL/PLL circuitry enables stable operation down to 120 MHz and supports future frequency scaling.

Key Specifications

Pinout & Package

Package: 165-pin plastic FBGA (13 × 15 × 1.4 mm), RoHS-compliant Pb-free, marked "R1Q3A7236ABB".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with CY7C2663KV18 and IS42Q256S36, the R1Q3A7236ABB provides finer ZQ-based output impedance tuning and explicit DLL/PLL disable (/DOFF), making it preferable for high-signal-integrity designs requiring adaptive drive strength and low-jitter clock recovery.

Availability

R1Q3A7236ABB is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing in 4G LTE infrastructure, and industrial real-time control systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R1Q3A7236ABB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1Q3A7236ABB belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-throughput, low-latency buffering in networking and telecommunications equipment where deterministic timing and dual-port concurrency are critical.

FAQ

What is the maximum operating frequency and corresponding cycle time for the R1Q3A7236ABB?

The R1Q3A7236ABB is rated for a maximum operating frequency of 333 MHz, corresponding to a minimum cycle time of 3.0 ns. This specification is validated under industrial temperature conditions (−40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V. The device maintains timing compliance across this range without derating, supporting sustained 1.332 GB/s peak bandwidth in dual-port operation.

How does the R1Q3A7236ABB handle simultaneous read and write operations?

The R1Q3A7236ABB implements true dual-port architecture with physically separate read and write data paths. When /R and /W are asserted in the same clock cycle, the read operation takes precedence and executes immediately, while the write is deferred until the next available cycle. This priority scheme ensures deterministic latency for time-critical read responses in applications like packet forwarding engines.

What is the function of the ZQ pin on the R1Q3A7236ABB, and how is it configured?

The ZQ pin on the R1Q3A7236ABB is used for output impedance calibration. It must be terminated to ground via a precision resistor (RQ), typically 250 Ω, to set Q and CQ output driver impedance to 0.2 × RQ (e.g., 50 Ω). The total external capacitance on ZQ must remain below 7.5 pF. Leaving ZQ unconnected or tying it to VSS disables calibration and forces minimum impedance mode.

Does the R1Q3A7236ABB support industrial temperature operation, and what is the specified range?

Yes, the R1Q3A7236ABB is qualified for industrial temperature operation across −40°C to +85°C. This rating is confirmed by the "I" suffix in the part number variant (e.g., R1Q3A7236ABB-33IA0), and all DC and AC specifications in the datasheet are guaranteed over this full range with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V.

What are the power supply requirements for the R1Q3A7236ABB core and I/O circuits?

The R1Q3A7236ABB requires two independent supplies: VDD = 1.7–1.9 V (nominal 1.8 V) for the core logic and memory array, and VDDQ = 1.4–1.5 V (nominal 1.5 V) for the I/O buffers. VDDQ must never exceed VDD. Both supplies must ramp monotonically within 200 ms, with VDD stabilized before VDDQ, and VREF applied simultaneously with or after VDDQ to ensure proper HSTL input threshold referencing.