Renesas R1Q3A7236ABG-33IB0

Overview

R1Q3A7236ABG-33IB0 from Renesas Electronics is a 72-Mbit QDR™ II synchronous SRAM with 2,097,152-word × 36-bit organization, fabricated in advanced CMOS using full six-transistor memory cells. It operates at 333 MHz (3.0 ns cycle time), supports 1.8 V core and 1.4–1.5 V I/O supply, and delivers quad-data-rate burst reads/writes via separate read/write ports - ideal for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the R1Q3A7236ABG-33IB0 datasheet, R1Q3A7236ABG-33IB0 pinout, R1Q3A7236ABG-33IB0 application, or R1Q3A7236ABG-33IB0 equivalent, key selection criteria include its 4-word burst length, 1.5-cycle read latency, HSTL I/O compatibility, DLL/PLL-based output timing control, and industrial temperature range (−40°C to +85°C) with Pb-free 165-pin FBGA packaging.

Technical Context

This device implements true dual-port QDR architecture with independent synchronous read and write data paths, clocked by K and /K on rising edges only. Its internal burst counter and address register enable deterministic 4-tick burst addressing, while echo clocks CQ and /CQ provide tightly matched timing references for high-speed data capture.

The R1Q3A7236ABG-33IB0 integrates JTAG 1149.1 test access, programmable output impedance via ZQ calibration, and DLL/PLL circuitry supporting stable operation down to 120 MHz. Clock-stop capability enables μs-scale restart, and /DOFF allows bypassing DLL/PLL for low-frequency use without reinitialization.

Key Specifications

Pinout & Package

Package: 165-ball plastic FBGA (15 × 17 mm, 1.4 mm height), RoHS-compliant Pb-free construction with industrial-grade marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-333BZXC and IDT72T3615L5PF, the R1Q3A7236ABG-33IB0 offers unique industrial-temperature qualification, /DOFF-enabled DLL bypass, and lower active current - making it optimal for thermally constrained, mixed-frequency embedded systems where flexibility and power efficiency are prioritized over drop-in replacement.

Availability

R1Q3A7236ABG-33IB0 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom line card buffering, and industrial FPGA co-processor memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R1Q3A7236ABG-33IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with deep expertise in memory, microcontrollers, and analog/power devices.

The R1Q3A7236ABG-33IB0 belongs to Renesas' QDR™ II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and test instrumentation systems demanding deterministic timing and industrial reliability.

FAQ

What is the maximum operating frequency and corresponding cycle time for the R1Q3A7236ABG-33IB0?

The R1Q3A7236ABG-33IB0 is rated for a maximum operating frequency of 333 MHz, corresponding to a minimum cycle time of 3.0 ns. This specification is validated under industrial temperature conditions (−40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V. The device maintains full functionality and timing compliance across this range without derating.

Does the R1Q3A7236ABG-33IB0 support both single-clock and double-clock output timing modes?

Yes, the R1Q3A7236ABG-33IB0 supports both modes. In double-clock mode, C and /C serve as user-controlled output timing references. In single-clock mode, C and /C are tied high, and K and /K become the output reference clocks - a configuration explicitly supported and documented for the R1Q3 series in the datasheet.

What is the function of the /DOFF pin on the R1Q3A7236ABG-33IB0, and how does it affect initialization?

The /DOFF pin disables the internal DLL/PLL when driven low, enabling stable low-frequency operation without DLL lock time. When /DOFF is high, the device requires ≥1024 stable K clock cycles (or ≥20 µs) after power-up for DLL initialization. With /DOFF low, only NOP/setup cycles are needed - no DLL lock wait, simplifying low-speed boot sequences.

How is output impedance calibrated on the R1Q3A7236ABG-33IB0, and what resistor value is recommended for ZQ?

Output impedance is calibrated via the ZQ pin, which must be connected to ground through a precision resistor RQ. For nominal 50 Ω output impedance, RQ = 250 Ω (since ZQ sets output impedance to 0.2 × RQ). The total external capacitance on ZQ must remain below 7.5 pF to ensure accurate calibration, and RQ tolerance should be ≤1% for 15% impedance matching accuracy.

Is the R1Q3A7236ABG-33IB0 pin-compatible with other members of the R1QxA72xx family, such as the R1Q3A7218ABG-33IB0?

No, the R1Q3A7236ABG-33IB0 is not pin-compatible with the R1Q3A7218ABG-33IB0. Although both use the same 165-pin FBGA package, their data bus widths differ (36-bit vs. 18-bit), resulting in distinct pin assignments for D/Q signals and byte-write controls (/BW0–/BW3 vs. /BW0–/BW1). Pin mapping must be verified per device-specific pinout diagrams.