Renesas R1Q4A7236ABG-33IB0

Overview

R1Q4A7236ABG-33IB0 from Renesas Electronics is a 72-Mbit DDR II synchronous SRAM with 2,097,152-word × 36-bit organization, 333 MHz max clock frequency, 1.8 V core supply (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible I/O. It operates in industrial temperature range (−40°C to +85°C) and is used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the R1Q4A7236ABG-33IB0 datasheet, R1Q4A7236ABG-33IB0 pinout, R1Q4A7236ABG-33IB0 application, or R1Q4A7236ABG-33IB0 equivalent, key selection criteria include burst-of-two DDR timing, dual-clock input (K/̅K) registration, echo clocks (CQ/̅CQ), programmable output impedance via ZQ, and JTAG 1149.1 test access.

Technical Context

This device implements a synchronous double data rate architecture where all inputs-including address (SAx), control (/LD, R-/W, /BWx), and clocks (K, /K)-are registered on the rising edges of K and /K. Data I/O occurs on both edges of the same clock pair, enabling true DDR operation without internal PLL/DLL dependency for basic functionality.

It features a linear two-word burst mode, internally self-timed write control, and supports clock-stop with microsecond restart. The integrated DLL/PLL (enabled by default) provides a wide output data valid window and enables future frequency scaling; /DOFF allows bypass for stable low-frequency operation.

Key Specifications

Pinout & Package

Package: 165-pin plastic FBGA (15 mm × 17 mm × 1.4 mm, Pb-free, industrial temp grade).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with IDT 72T36115L10PF and Cypress CY7C2663KV18-333BZI, the R1Q4A7236ABG-33IB0 delivers higher bandwidth in a DDR-II-compatible control scheme with on-die impedance tuning-making it optimal for new designs targeting 333 MHz packet buffering where HSTL signal integrity and thermal robustness are critical.

Availability

R1Q4A7236ABG-33IB0 is available at Aetrix Electronics and suitable for network switch buffer memory, telecom line card packet FIFO, and industrial PLC real-time data cache requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R1Q4A7236ABG-33IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog devices, and high-performance memory solutions for automotive, industrial, and communications markets.

The R1Q4A7236ABG-33IB0 belongs to Renesas' DDR II SRAM product line, designed specifically for high-throughput, low-latency buffering in networking infrastructure and real-time embedded systems demanding industrial temperature reliability and HSTL signal integrity.

FAQ

What is the maximum operating frequency of the R1Q4A7236ABG-33IB0?

The R1Q4A7236ABG-33IB0 is rated for a maximum clock frequency of 333 MHz, corresponding to a minimum cycle time of 3.0 ns. This specification is guaranteed across the full industrial temperature range (−40°C to +85°C) and under specified VDD (1.8 V ±0.1 V) and VDDQ (1.5 V) conditions. Performance beyond this frequency is not characterized or supported.

Does the R1Q4A7236ABG-33IB0 support JTAG boundary-scan testing?

Yes, the R1Q4A7236ABG-33IB0 integrates a fully compliant IEEE 1149.1 JTAG test access port with TDI, TDO, TMS, and TCK pins. This enables boundary-scan testing of PCB interconnects and in-system debugging without requiring additional test fixtures. The JTAG interface operates at 1.8 V I/O levels and remains functional across the full industrial temperature range.

How is output impedance calibrated on the R1Q4A7236ABG-33IB0?

Output impedance on the R1Q4A7236ABG-33IB0 is calibrated via the ZQ pin, which connects to an external precision resistor (RQ) tied to ground. The device sets DQ and CQ output impedance to 0.2 × RQ. For nominal 50 Ω output drive, a 250 Ω resistor is recommended. Total external capacitance on the ZQ ball must remain below 7.5 pF to ensure calibration accuracy within ±15%.

What is the purpose of the /DOFF pin on the R1Q4A7236ABG-33IB0?

The /DOFF pin on the R1Q4A7236ABG-33IB0 disables the internal DLL/PLL when driven low. This places the device in a stable, low-frequency operational mode where data output timing is directly referenced to K and /K instead of the DLL/PLL-controlled clocks. This mode eliminates DLL lock time and jitter sensitivity, making it suitable for systems operating below 120 MHz or requiring deterministic startup timing.

Can the R1Q4A7236ABG-33IB0 be used in single-data-rate (SDR) mode?

No, the R1Q4A7236ABG-33IB0 is a dedicated DDR II SRAM and does not support SDR operation. All data transfers occur on both rising edges of the K and /K clock pair, and the internal timing architecture assumes double-data-rate signaling. Attempting SDR use would violate setup/hold timing requirements and result in undefined or failed data transfers.