Renesas R1QAA7236ABB-20IA0
- Part No.:
- R1QAA7236ABB-20IA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QAA7236ABB-20IA0.pdf
- Description:
- STANDARD SRAM, 2MX36, 0.45NS
- Quantity:
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Inventory:171
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Product details
Overview
R1QAA7236ABB-20IA0 from Renesas Electronics is a 72-Mbit (2,097,152 × 36) QDR™ II+ synchronous SRAM with 2.5-cycle read latency, 1.8 V core / 1.4–1.5 V I/O supply, and 165-pin FBGA (13 × 15 mm) packaging. It supports 500 MHz clock frequency (2 ns cycle time), burst-of-4 DDR operation, and separate read/write data ports - deployed in high-bandwidth network packet buffers and telecom line-card memory subsystems.
For engineers reviewing the R1QAA7236ABB-20IA0 datasheet, R1QAA7236ABB-20IA0 pinout, R1QAA7236ABB-20IA0 application, or R1QAA7236ABB-20IA0 equivalent, key selection criteria include verified QDR-II+ timing compliance, on-die termination (ODT) support per R1QD-series specification, HSTL I/O compatibility, DLL/PLL-enabled output timing margin, and industrial temperature range (−40°C to +85°C) operation.
Technical Context
This device implements a true quad-data-rate architecture using dual-edge-triggered K and /K clocks for address/control latching and data transfer, with echo clocks CQ and /CQ edge-aligned to output data for precise capture. Its internal burst counter and synchronous peripheral logic eliminate external address sequencing logic.
The R1QAA7236ABB-20IA0 belongs to the R1QD-series variant (denoted by 'D' in position 3 of part number), confirming ODT enablement, 2.5-cycle read latency, and absence of C/C pins - relying solely on K and /K as output reference clocks. It uses full-CMOS six-transistor memory cells and supports programmable output impedance via ZQ calibration resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2,097,152 words × 36 bits) - enables single-chip replacement for two ×36 x 36-Mbit legacy SRAMs in packet buffer designs. |
| Max Clock Frequency | 500 MHz (2 ns cycle time) - supports 2 Gbps per data pin in burst-of-4 DDR mode, delivering 36 Gbps aggregate bandwidth. |
| Read Latency | 2.5 clock cycles - fixed latency ensures deterministic timing for pipeline-synchronized network processors. |
| Supply Voltages | VDD = 1.7–1.9 V (core); VDDQ = 1.4–1.5 V (I/O) - enables low-power operation while maintaining HSTL-compliant signal integrity. |
| Package | 165-pin FBGA, 13 × 15 × 1.4 mm - RoHS-compliant, industrial-grade package with validated thermal performance up to 85°C ambient. |
| Operating Temperature | −40°C to +85°C - qualified for carrier-grade infrastructure equipment requiring extended thermal reliability. |
| On-Die Termination | Enabled (R1QD-series) - provides selectable Thevenin termination (52–150 Ω) via ODT pin and ZQ resistor, eliminating external termination components. |
Pinout & Package
Package: 165-ball plastic FBGA (13 mm × 15 mm, 0.8 mm pitch), ball grid layout per Renesas datasheet R10DS0169EJ0011, page 4 (R1QD(K)A7236 bottom variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Input clock pair | Registers all address, control, and write data on rising edges; defines timing reference for all synchronous operations. |
| /R, /W | Synchronous command inputs | /R initiates burst read; /W initiates burst write; both sampled on K rising edge with setup/hold timing constraints. |
| /BW0–/BW3 | Byte write enable inputs | Independently mask four 9-bit byte lanes during write; supports partial writes without read-modify-write overhead. |
| D0–D35 | Input data bus | 36-bit wide synchronous input port; data registered on K and /K rising edges (two edges per write cycle). |
| Q0–Q35 | Output data bus | 36-bit wide synchronous output port; data valid aligned to CQ and /CQ edges; QVLD indicates active window. |
| CQ, /CQ | Output echo clocks | Edge-aligned to output data; used for receiver clocking; continue running during tri-state; no stop capability. |
| QVLD | Valid data indicator | Asserts half-cycle before first read data and deasserts half-cycle before last - simplifies high-speed data capture logic. |
| ODT | On-die termination control | High = high-range mode (105–150 Ω); low = low-range mode (52–105 Ω); floating = high-range mode (R1QD-series default). |
| ZQ | Impedance calibration input | Connected to precision resistor to ground (RQ = 250 Ω typical); sets output driver and ODT impedance to 0.2×RQ or 0.3/0.6×RQ. |
| /DOFF | DLL/PLL disable | Low disables DLL/PLL for stable sub-120 MHz operation; high enables DLL/PLL for full-frequency timing margin. |
| TMS, TDI, TCK, TDO | JTAG test interface | IEEE 1149.1 compliant; supports boundary scan and device-level diagnostics; operates at 1.8 V I/O level. |
Key Features
| Feature | Design Value |
|---|---|
| Quad Data Rate (QDR-II+) Architecture | Enables concurrent read and write operations on independent buses - eliminates arbitration delay in real-time buffering applications. |
| Burst-of-4 Access | Reduces address bus frequency by 4× versus single-word access - lowers controller complexity and PCB routing congestion. |
| HSTL Class I I/O Interface | Guarantees signal integrity at 500 MHz with controlled slew rate and on-die termination - compatible with FPGA and ASIC memory controllers. |
| Programmable Output Impedance | Calibrated via external ZQ resistor (250 Ω typical) - matches system trace impedance without board-level resistors or tuning. |
| Industrial Temperature Range | Qualified from −40°C to +85°C - meets GR-1089-CORE and Telcordia requirements for outdoor and central-office deployment. |
| Integrated JTAG Boundary Scan | Supports IEEE 1149.1 testing without external debug hardware - accelerates production test and field failure analysis. |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches and routers with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to network processor memory controller via QDR-II+ bus. Use Value: 36 Gbps sustained bandwidth and deterministic 2.5-cycle read latency enable line-rate packet processing at 10 Gbps and beyond. |
Use Scenario: Buffering voice, video, and control data in carrier-class DSLAMs, OLTs, and base station controllers. IC Role / Device Role / Timing Role: Dual-port SRAM serving as frame buffer and statistics accumulator in time-division multiplexed (TDM) and packet-switched hybrid systems. Use Value: Separate read/write ports and ODT support reduce signal reflections on dense backplane traces, improving BER in noisy telecom environments. |
| Wireless Baseband Processing | Test Equipment Memory Subsystem |
Use Scenario: Real-time buffering of IQ samples between RF front-end ADC/DAC and FPGA-based digital pre-distortion (DPD) engines. IC Role / Device Role / Timing Role: Low-jitter, burst-access memory synchronized to FPGA fabric clocks for deterministic sample alignment. Use Value: DLL/PLL circuitry delivers >100 ps output data valid window - critical for sub-nanosecond timing closure in 5G NR baseband chains. |
Use Scenario: High-speed pattern memory in automated test equipment (ATE) for semiconductor wafer probing and IC functional validation. IC Role / Device Role / Timing Role: Deterministic, jitter-tolerant memory delivering stimulus/response vectors at 500 MHz to parallel DUT interfaces. Use Value: QVLD signal and echo clocks eliminate need for external strobe generation - reduces ATE channel count and improves test repeatability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18-500BZXC | 500 MHz, ×18 organization (36 Mbit), no ODT, 165-ball FBGA (13 × 15 mm) | Lacks on-die termination; requires external termination resistors; lower density limits use in full 72-Mbit buffer designs. | Select when ODT is unnecessary and system layout accommodates discrete termination; verify timing margins without DLL/PLL assist. |
| R1QDA7236ABB-20IA0 | Identical pinout, package, and electrical specs; same R1QD-series ODT/latency configuration - confirmed drop-in replacement per Renesas documentation. | No functional difference; identical industrial temp rating, timing, and feature set. | Valid alternative only if marked as R1QDA7236ABB-20IA0; not a generic substitution - exact match per part numbering rules. |
Compared with CY7C2663KV18-500BZXC, R1QAA7236ABB-20IA0 delivers double density and integrated ODT, reducing BOM count and improving signal integrity; versus R1QDA7236ABB-20IA0, it is functionally identical but reflects Renesas' internal revision coding - both meet identical QDR-II+ timing and industrial qualification standards.
Availability
R1QAA7236ABB-20IA0 is available at Aetrix Electronics and suitable for network packet buffering, telecom line-card memory, and wireless baseband processing requiring stable component supply across extended product lifecycles.
Supply support for R1QAA7236ABB-20IA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1QAA72/R1QDA72 series was designed specifically for high-throughput, low-latency memory subsystems in carrier-grade networking and telecom equipment - emphasizing QDR-II+ interoperability, industrial reliability, and system-level signal integrity.
FAQ
What is the maximum operating frequency of the R1QAA7236ABB-20IA0?
The R1QAA7236ABB-20IA0 supports a maximum clock frequency of 500 MHz, corresponding to a 2 ns minimum cycle time. This is validated under industrial temperature conditions (−40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V, per AC characteristics in Renesas datasheet R10DS0169EJ0011. Operation above this frequency violates timing specifications and may result in data corruption.
Does the R1QAA7236ABB-20IA0 support on-die termination (ODT)?
Yes, the R1QAA7236ABB-20IA0 supports ODT as confirmed by its R1QD-series designation ('D' in position 3 of the part number). It offers two selectable Thevenin-equivalent termination ranges (52–105 Ω and 105–150 Ω) controlled by the ODT pin and calibrated via the ZQ resistor. This eliminates need for external termination components on the data bus.
What is the meaning of "-20IA0" in R1QAA7236ABB-20IA0?
In R1QAA7236ABB-20IA0, "-20" denotes a 500 MHz speed grade (2 ns cycle time), "I" indicates industrial temperature range (−40°C to +85°C), "A0" is Renesas' internal revision code, and "BB" specifies the 13 × 15 mm FBGA package. The "A" in position 4 confirms 1.8 V core supply, and "D" in position 3 confirms ODT enablement and 2.5-cycle read latency.
How does the QVLD signal function in the R1QAA7236ABB-20IA0?
The QVLD signal in R1QAA7236ABB-20IA0 is an output-valid indicator that asserts half a clock cycle before the first read data word and deasserts half a cycle before the last - providing precise timing for receiver sampling. It is edge-aligned with CQ and /CQ, enabling simplified capture logic in FPGA- or ASIC-based memory controllers without additional strobe generation.
Can the R1QAA7236ABB-20IA0 operate without the DLL/PLL enabled?
Yes, the R1QAA7236ABB-20IA0 can operate with DLL/PLL disabled by asserting /DOFF low. This mode supports stable operation down to DC, though AC timing parameters (e.g., tAC, tQV) degrade below 120 MHz. For full-speed operation at 500 MHz, /DOFF must be held high to enable DLL/PLL for optimal output timing margin and jitter suppression.
R1QAA7236ABB-20IA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1QAA7236ABB-20IA0 FAQ
1.How can I place an order for R1QAA7236ABB-20IA0 through Aetrix?
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7.What is the process for return or replacement of R1QAA7236ABB-20IA0?
All R1QAA7236ABB-20IA0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QAA7236ABB-20IA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QAA7236ABB-20IA0 part is unused and in its original packaging.
Return procedure for R1QAA7236ABB-20IA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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