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Renesas R1QDA7218ABG-20IB0
- Part No.:
- R1QDA7218ABG-20IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QDA7218ABG-20IB0.pdf
- Description:
- STANDARD SRAM, 4MX18, 0.45NS
- Quantity:
- Payment:
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Inventory:127
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Product details
Overview
R1QDA7218ABG-20IB0 from Renesas Electronics is a 72-Mbit QDR™ II+ SRAM with 4,194,304-word × 18-bit organization, synchronous quad data rate operation, 2.5-cycle read latency, on-die termination (ODT), and 165-pin FBGA (15 × 17 mm) packaging. It delivers 500 MHz max clock frequency, HSTL I/O, and separate read/write data ports for high-bandwidth networking buffer applications.
For engineers reviewing the R1QDA7218ABG-20IB0 datasheet, R1QDA7218ABG-20IB0 pinout, R1QDA7218ABG-20IB0 application, or R1QDA7218ABG-20IB0 equivalent, key selection criteria include burst-of-4 timing alignment, ODT impedance control via ZQ/ODT pins, QVLD-valid-data indication, K//K clock-synchronized dual-edge write registration, and industrial temperature support (−40°C to +85°C).
Technical Context
This device implements a true synchronous architecture with independent read and write ports, using K and /K as input clocks for address/control/data registration on both rising edges. Its internal burst counter and four-tick burst mode reduce external address bus frequency by 4× while maintaining full DDR bandwidth utilization.
The R1QDA7218ABG-20IB0 integrates on-die termination (ODT) with selectable low/high impedance ranges (52–150 Ω Thevenin equivalent), programmable output impedance via ZQ resistor, and QVLD signal edge-aligned with CQ//CQ to simplify high-speed data capture in systems requiring precise setup/hold margin control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4,194,304 × 18) |
| Max Clock Frequency | 500 MHz - enables 2 Gbps per data pin in burst-of-4 mode |
| Read Latency | 2.5 cycles - determines minimum time from /R assertion to first valid Q output |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports HSTL Class I signaling with tight noise margin |
| Core Voltage | VDD = 1.8 V ±0.1 V - defines internal logic and array operating range |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade embedded and telecom infrastructure |
| Package | 165-pin FBGA (15 mm × 17 mm × 1.4 mm) - standard footprint for high-pin-count memory modules |
Pinout & Package
165-pin plastic FBGA package (15 × 17 × 1.4 mm), RoHS-compliant, Pb-free tray delivery. Pin functions validated per Renesas Rev. 0.08a datasheet Figures 4–5 and Pin Descriptions (Pages 6–7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Input clock pair | Registers all address, control, and write data on rising edges; defines synchronous timing boundary for /R, /W, /BWx |
| /R, /W | Read/write command inputs | Active-low synchronous commands latched on K rising edge; /R initiates read burst, /W initiates write burst |
| /BW0, /BW1 | Byte write enable inputs | Control 9-bit byte masking during 18-bit write cycles; sampled on K//K rising edges |
| SA[19:0] | Synchronous address inputs | 20-bit address bus registered on K rising edge; internally expanded to support burst-of-4 addressing sequence |
| D[17:0] | Write data inputs | 18-bit parallel data path registered on both K and /K rising edges (dual-edge sampling) |
| Q[17:0] | Read data outputs | 18-bit parallel data synchronized to CQ//CQ or K//K; QVLD indicates validity window |
| QVLD | Valid data indicator | Output pulse active half-cycle before first read data and deasserted half-cycle before last - enables precise capture windowing |
| ZQ | Impedance calibration reference | Connects to precision resistor (RQ) to set output driver and ODT impedance; RQ = 5 × target ZOUT |
| ODT | On-die termination control | Configures ODT range: low (52–105 Ω) or high (105–150 Ω) Thevenin termination for D[17:0] inputs |
| CQ, /CQ | Output echo clocks | Edge-matched to Q outputs; used as timing reference for external latch - eliminates board trace skew impact |
| VDD, VDDQ, VSS, VREF | Power and reference supplies | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; VREF = VDDQ/2 reference for HSTL inputs; all must be decoupled per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Burst-of-4 synchronous operation | Reduces external address bus frequency by 4× while sustaining full 500 MHz effective bandwidth |
| Separate read/write data ports | Enables concurrent read and write transactions without bus arbitration delay |
| On-die termination (ODT) | Eliminates external termination resistors; supports dynamic ODT enable/disable per burst cycle |
| QVLD valid-data indicator | Provides deterministic, edge-aligned strobe for reliable high-speed data capture at 500 MHz |
| Programmable output impedance | ZQ resistor tuning allows precise matching to PCB trace impedance (±15% tolerance guaranteed) |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system debug without additional test pads |
Applications
| Packet Buffer in Switch ASIC | Line Card Memory in Telecom Equipment |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed shared-memory buffer interfacing directly to switch fabric controller via QDR-II+ interface. Use Value: 500 MHz clock rate and burst-of-4 operation deliver 18 Gbps sustained bandwidth - sufficient for 10GbE line-rate buffering with zero wait states. | Use Scenario: Serving as frame buffer and lookup table memory in carrier-grade optical line cards supporting OTN and SONET protocols. IC Role / Device Role / Timing Role: Synchronous dual-port SRAM providing simultaneous access to control plane (CPU) and data plane (FPGA/ASIC) subsystems. Use Value: Industrial temperature rating (−40°C to +85°C) and ODT support ensure stable operation in uncontrolled chassis environments with minimal signal integrity tuning. |
| Baseband Processing in 4G/LTE Radio Units | Real-Time Video Frame Buffer in Broadcast Encoders |
Use Scenario: Holding channel estimation coefficients and FFT intermediate results in LTE eNodeB baseband processing units. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory co-located with DSP/FPGA for deterministic real-time processing pipelines. Use Value: 2.5-cycle read latency and QVLD timing signal enable sub-10 ns data capture windows - critical for meeting 3GPP TDD frame timing constraints. | Use Scenario: Buffering uncompressed 1080p60 YUV422 video frames between encoder ASIC and PCIe host interface in broadcast contribution encoders. IC Role / Device Role / Timing Role: Dual-clock domain bridge memory with independent read/write ports synchronizing FPGA video pipeline to host DMA engine. Use Value: Separate D[17:0] and Q[17:0] buses eliminate interlock stalls - enabling continuous 2.16 Gbps video stream transfer without frame drops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-500BZXC | Same 72-Mbit ×18, 500 MHz, 2.5-cycle RL, 165-BGA; Cypress (now Infineon) implementation with identical pinout and AC timing | No ODT support; requires external termination; lacks QVLD signal | Select when system already uses Cypress QDR-II+ ecosystem and external termination is acceptable |
| AS7C362000B-500BIN | 72-Mbit ×18 QDR-II+, 500 MHz, 2.5-cycle RL, but 165-BGA with different pin assignment (non-pin-compatible); no ODT or QVLD | Requires PCB redesign; limited industrial temp support (−40°C to +85°C only in specific batches) | Select only for cost-sensitive designs where layout flexibility exists and ODT/QVLD are not required |
Compared with CY7C2665KV18-500BZXC and AS7C362000B-500BIN, the R1QDA7218ABG-20IB0 provides integrated ODT and QVLD - reducing BOM count and simplifying timing closure in high-speed backplane and telecom applications where signal integrity margins are constrained.
Availability
R1QDA7218ABG-20IB0 is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, baseband processing, and broadcast video frame buffering requiring stable component supply across extended product lifecycles.
Supply support for R1QDA7218ABG-20IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1QDA72 series belongs to Renesas' high-performance QDR-II+ SRAM product line, designed specifically for bandwidth-intensive networking, telecom, and real-time signal processing applications demanding deterministic low-latency access and robust signal integrity.
FAQ
What is the maximum operating frequency of the R1QDA7218ABG-20IB0?
The R1QDA7218ABG-20IB0 is rated for a maximum clock frequency of 500 MHz, corresponding to a minimum cycle time of 2.0 ns. This specification is validated under industrial temperature conditions (−40°C to +85°C) and with VDD = 1.8 V ±0.1 V and VDDQ = 1.4–1.8 V. Operation above this frequency violates AC timing parameters and may result in data corruption or functional failure. The R1QDA7218ABG-20IB0 datasheet specifies this limit in the Speed Bin Table (Page 3) and AC Characteristics section.
Does the R1QDA7218ABG-20IB0 support on-die termination (ODT)?
Yes, the R1QDA7218ABG-20IB0 supports on-die termination (ODT) as indicated by the "D" in its part number prefix (R1QDA7218…), which denotes ODT-enabled QDR-II+ devices. ODT is controlled via the ODT pin and calibrated using the ZQ pin connected to a precision resistor. Two impedance ranges are selectable: low (52–105 Ω) and high (105–150 Ω) Thevenin equivalent, both tracking the ZQ resistor value. This feature eliminates the need for external termination resistors on D[17:0] lines.
What is the function of the QVLD pin on the R1QDA7218ABG-20IB0?
The QVLD (Q Valid) pin on the R1QDA7218ABG-20IB0 is an output signal that indicates the validity window of read data on Q[17:0]. It asserts half a clock cycle before the first valid data word and deasserts half a cycle before the last, and is edge-aligned with CQ//CQ. This allows external logic to precisely gate data capture without relying on fixed delay chains or complex deskew circuits - a critical capability for reliable operation at 500 MHz. QVLD is present only on QDR-II+ and DDR-II+ devices.
How many address bits does the R1QDA7218ABG-20IB0 require for full memory access?
The R1QDA7218ABG-20IB0 has a 4,194,304-word × 18-bit organization, requiring 22 address bits to select each word. However, the device exposes only 20 synchronous address inputs (SA[19:0]) because the two least-significant bits are generated internally to support the mandatory burst-of-4 operation. During a read or write cycle, the device automatically increments the address across four consecutive locations (A, A+1, A+2, A+3), eliminating the need for external LSB toggling.
What is the purpose of the ZQ pin on the R1QDA7218ABG-20IB0?
The ZQ pin on the R1QDA7218ABG-20IB0 serves as the reference terminal for programmable output impedance and on-die termination calibration. It must be connected to a precision resistor (RQ) tied to VSS, where RQ = 5 × the desired output driver impedance (e.g., 250 Ω for 50 Ω output). The device measures this resistance during initialization and configures both output drivers and ODT circuitry accordingly. The total capacitance on the ZQ net must remain below 7.5 pF to ensure calibration accuracy.
R1QDA7218ABG-20IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1QDA7218ABG-20IB0 FAQ
1.How can I place an order for R1QDA7218ABG-20IB0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1QDA7218ABG-20IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1QDA7218ABG-20IB0 reliable?
The price and inventory of R1QDA7218ABG-20IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QDA7218ABG-20IB0 is usually 5 days.
3.What payment methods are accepted for R1QDA7218ABG-20IB0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1QDA7218ABG-20IB0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1QDA7218ABG-20IB0?
R1QDA7218ABG-20IB0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1QDA7218ABG-20IB0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1QDA7218ABG-20IB0?
For technical support, including R1QDA7218ABG-20IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QDA7218ABG-20IB0 requirements.
6.How does Aetrix verify that R1QDA7218ABG-20IB0 is sourced from the original manufacturer or authorized distributors?
All R1QDA7218ABG-20IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QDA7218ABG-20IB0 meets industry standards.
7.What is the process for return or replacement of R1QDA7218ABG-20IB0?
All R1QDA7218ABG-20IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QDA7218ABG-20IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QDA7218ABG-20IB0 part is unused and in its original packaging.
Return procedure for R1QDA7218ABG-20IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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