Renesas R1QDA7236ABB-20IB0
- Part No.:
- R1QDA7236ABB-20IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QDA7236ABB-20IB0.pdf
- Description:
- STANDARD SRAM, 2MX36, 0.45NS
- Quantity:
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Inventory:2,507
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Product details
Overview
R1QDA7236ABB-20IB0 from Renesas Electronics is a 72-Mbit (2,097,152-word × 36-bit) QDR™ II+ synchronous SRAM with 2.5-cycle read latency, on-die termination (ODT), and 165-pin FBGA (13 × 15 × 1.4 mm) packaging. It operates at up to 500 MHz (2.0 ns cycle time), supports HSTL I/O, and delivers concurrent read/write via separate data ports - ideal for high-bandwidth packet buffering in network switches and routers.
For engineers reviewing the R1QDA7236ABB-20IB0 datasheet, R1QDA7236ABB-20IB0 pinout, R1QDA7236ABB-20IB0 application, or R1QDA7236ABB-20IB0 equivalent, key selection criteria include burst-of-4 operation, ODT enable/disable control, QVLD timing indicator, K//K clocking architecture, and industrial temperature range (−40°C to +85°C).
Technical Context
This device implements a true quad-data-rate interface using independent read and write ports synchronized to K and /K clocks. All address, control, and data inputs are registered on rising edges of K and /K, while output data aligns with echo clocks CQ and /CQ - which are phase-matched to K//K since C//C pins are absent in QDR II+ series.
The internal architecture includes a burst counter, DLL/PLL circuitry for data valid window extension, programmable output impedance via ZQ resistor, and JTAG 1149.1 test access. ODT functionality is controlled by the ODT pin and tracks RQ value, supporting Thevenin-equivalent termination ranges of 52–105 Ω (low mode) or 105–150 Ω (high mode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (2,097,152 × 36) |
| Interface | QDR II+ with separate read/write ports and burst-of-4 |
| Max frequency | 500 MHz (2.0 ns cycle time) - enables 4 Gbps per data pin |
| Read latency | 2.5 cycles - determines minimum time between /R assertion and first valid Q output |
| Supply voltages | VDD = 1.7–1.9 V (core); VDDQ = 1.4–1.5 V (I/O) - enables low-power high-speed operation |
| ODT support | Yes, with selectable low/high range via ODT pin - eliminates external termination resistors |
| Operating temp | −40°C to +85°C (industrial grade) - suitable for telecom infrastructure environments |
Pinout & Package
Package: 165-ball plastic FBGA (13 mm × 15 mm × 1.4 mm, ball pitch 0.8 mm), RoHS-compliant Pb-free with tray packaging.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Input clock pair | Registers all synchronous inputs (address, /R, /W, /BWx) and data on rising edges - defines timing reference for entire interface |
| /R, /W | Synchronous command inputs | Initiate read or write burst on next K rising edge; /R takes precedence over /W when asserted simultaneously |
| /BW0–/BW3 | Byte write enables | Selectively write D0–D8, D9–D17, D18–D26, or D27–D35 during burst - enables partial-word updates without masking logic |
| SA[0:19] | Synchronous address inputs | 20-bit address bus latched on K rising edge; internal counter generates burst addresses A+0 to A+3 |
| D0–D35 | Data inputs | 36-bit wide write data path; sampled on both K and /K rising edges for DDR write |
| Q0–Q35 | Data outputs | 36-bit wide read data path; aligned with CQ//CQ echo clocks for precise capture |
| CQ, /CQ | Output echo clocks | Phase-matched to output data edges - used as strobes for source-synchronous data capture |
| QVLD | Valid data indicator | Asserted half-cycle before first Q output and deasserted half-cycle after last Q - simplifies receiver timing margining |
| ODT | On-die termination control | Configures ODT impedance range (low/high/floating); enables dynamic termination during reads in common-I/O variants |
| ZQ | Impedance calibration input | Connected to precision resistor to ground (RQ = 5 × target Z0); sets output driver and ODT impedance |
| /DOFF | DLL/PLL disable | When low, bypasses DLL/PLL for stable sub-120 MHz operation - avoids lock failure at low frequencies |
| TMS, TDI, TCK, TDO | JTAG boundary scan | IEEE 1149.1 compliant test interface operating at 1.8 V I/O levels |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables full 100% bus utilization - simultaneous read and write transactions without arbitration delay |
| Burst-of-4 addressing | Reduces address bus frequency by 4× - lowers routing complexity and signal integrity burden |
| QVLD timing indicator | Provides explicit early/late framing of valid output data - eliminates need for complex strobe deskew circuits |
| Programmable output impedance | Calibrates drive strength to match PCB trace impedance via external ZQ resistor - improves signal integrity at 500 MHz |
| Industrial temperature range | Guaranteed operation from −40°C to +85°C - validated for uncontrolled ambient environments in carrier-grade equipment |
| On-die termination (ODT) | Eliminates external parallel termination resistors - reduces BOM count, board area, and stub-induced reflections |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed dual-port buffer providing concurrent read (forwarding engine) and write (PHY interface) access. Use Value: 500 MHz QDR II+ interface delivers 36 Gbps aggregate bandwidth - meets line-rate buffering for 10G/40G interfaces without bottleneck. | Use Scenario: Frame storage in OC-192/STM-64 SONET/SDH line cards requiring deterministic access timing. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between framer and switch fabric with jitter tolerance. Use Value: 2.5-cycle read latency and QVLD signal ensure precise data capture under ±100 ppm frequency tolerance - eliminates FIFO overflow/underflow. |
| Baseband Processing Memory | Test Equipment Pattern Memory |
Use Scenario: Temporary storage of IQ samples in LTE/5G massive MIMO baseband units during FFT/IFFT processing. IC Role / Device Role / Timing Role: Low-latency memory interfacing directly with FPGA-based DSP engines via dedicated read/write buses. Use Value: Separate I/O architecture prevents read/write contention - sustains sustained 4 Gbps per pin throughput across burst sequences. | Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to system clock domain for repeatable pattern generation. Use Value: Industrial temperature rating and ODT support ensure stable 500 MHz operation across thermal cycling in production test environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18-500BAXI | Same density (72 Mbit × 36), same 500 MHz speed, but uses 1.8 V VDDQ and lacks ODT | No on-die termination - requires external parallel resistors and increases layout complexity | Choose when legacy design compatibility with Cypress QDR II+ footprint is required and ODT is not needed |
| AS7C36S2048A-20BIN | Lower speed (200 MHz), asynchronous interface, no burst or echo clocks - fundamentally different architecture | Not suitable for high-speed packet buffering; limited to control-plane or configuration storage | Consider only for cost-sensitive, non-real-time applications where bandwidth < 1.4 Gbps suffices |
Compared with CY7C2663KV18-500BAXI and AS7C36S2048A-20BIN, R1QDA7236ABB-20IB0 uniquely combines 500 MHz QDR II+ performance with integrated ODT and QVLD - reducing system-level timing margining effort and eliminating external termination components required by the Cypress part, while outperforming the Alliance part by >2.5× in sustained bandwidth.
Availability
R1QDA7236ABB-20IB0 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across extended product lifecycles.
Supply support for R1QDA7236ABB-20IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog devices, and high-performance memory solutions for industrial, automotive, and communications markets.
The R1QDA72 series belongs to Renesas' QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in carrier-grade networking and telecom infrastructure where low latency, burst efficiency, and signal integrity are critical.
FAQ
What is the maximum operating frequency of the R1QDA7236ABB-20IB0?
The R1QDA7236ABB-20IB0 supports a maximum operating frequency of 500 MHz, corresponding to a 2.0 ns clock cycle time. This is validated under industrial temperature conditions (−40°C to +85°C) and with VDD = 1.7–1.9 V and VDDQ = 1.4–1.5 V. Performance is guaranteed per AC timing specifications in the R10DS0169EJ0011 datasheet Rev. 0.11.
Does the R1QDA7236ABB-20IB0 support on-die termination (ODT)?
Yes, the R1QDA7236ABB-20IB0 includes on-die termination (ODT) controlled by the ODT pin. It supports two impedance ranges: low mode (52–105 Ω) and high mode (105–150 Ω), selected via ODT pin state and calibrated against the ZQ resistor. ODT is enabled during read operations and disabled during writes in this separate-I/O variant.
What is the purpose of the QVLD pin on the R1QDA7236ABB-20IB0?
The QVLD (Q Valid) pin on the R1QDA7236ABB-20IB0 signals the validity window of output data Q0–Q35. It asserts half a cycle before the first valid data edge and deasserts half a cycle after the final data edge, aligning precisely with CQ and /CQ echo clocks. This eliminates setup/hold uncertainty for high-speed receivers capturing QDR II+ outputs.
How is read latency defined for the R1QDA7236ABB-20IB0?
Read latency for the R1QDA7236ABB-20IB0 is fixed at 2.5 clock cycles, meaning the first valid output word appears 2.5 K-clock periods after the /R signal is sampled on a rising K edge. This latency is inherent to the QDR II+ architecture and affects timing budgeting for read-response paths in systems like network switches and baseband processors.
What package type and dimensions does the R1QDA7236ABB-20IB0 use?
The R1QDA7236ABB-20IB0 uses a 165-ball plastic FBGA package measuring 13 mm × 15 mm × 1.4 mm with 0.8 mm ball pitch. It is Pb-free and supplied in trays, meeting RoHS compliance level 6/6. Pin assignments follow the bottom-view layout documented for R1QD(K)A7236 in the R10DS0169EJ0011 datasheet.
R1QDA7236ABB-20IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1QDA7236ABB-20IB0 FAQ
1.How can I place an order for R1QDA7236ABB-20IB0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1QDA7236ABB-20IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of R1QDA7236ABB-20IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QDA7236ABB-20IB0 is usually 5 days.
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For technical support, including R1QDA7236ABB-20IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QDA7236ABB-20IB0 requirements.
6.How does Aetrix verify that R1QDA7236ABB-20IB0 is sourced from the original manufacturer or authorized distributors?
All R1QDA7236ABB-20IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QDA7236ABB-20IB0 meets industry standards.
7.What is the process for return or replacement of R1QDA7236ABB-20IB0?
All R1QDA7236ABB-20IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QDA7236ABB-20IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QDA7236ABB-20IB0 part is unused and in its original packaging.
Return procedure for R1QDA7236ABB-20IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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