Renesas R1QDA7236ABG-19IB0
- Part No.:
- R1QDA7236ABG-19IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QDA7236ABG-19IB0.pdf
- Description:
- STANDARD SRAM, 2MX36, 0.45NS
- Quantity:
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Product details
Overview
R1QDA7236ABG-19IB0 from Renesas Electronics is a 72-Mbit QDR™ II+ SRAM with 2,097,152-word × 36-bit organization, synchronous quad data rate operation, 4-word burst, and on-die termination (ODT). It uses advanced CMOS technology with full six-transistor memory cells and supports industrial temperature range (−40°C to +85°C). It is used in high-bandwidth networking equipment such as packet buffers in routers and switches.
For engineers reviewing the R1QDA7236ABG-19IB0 datasheet, R1QDA7236ABG-19IB0 pinout, R1QDA7236ABG-19IB0 application, or R1QDA7236ABG-19IB0 equivalent, key selection criteria include read latency of 2.5 cycles, 533 MHz max frequency (1.875 ns cycle time), HSTL I/O compatibility, 165-pin FBGA package (15 × 17 mm), and ODT support for signal integrity in DDR systems.
Technical Context
This device implements a true synchronous dual-port architecture with independent read and write data paths, enabling concurrent transactions. Its timing is governed by K and /K input clocks (no C/C pins in II+ series), with output data aligned to echo clocks CQ and /CQ and validated by QVLD.
The internal burst counter and address registry support fixed 4-word burst addressing, while the DLL circuitry ensures wide output data valid window across frequencies ≥120 MHz. ODT control via the ODT pin selects between low-range (0.3 × RQ) and high-range (0.6 × RQ) Thevenin termination, tracking ZQ resistor value for impedance matching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (2,097,152 × 36) |
| Max Frequency | 533 MHz - enables 4.264 GB/s peak bandwidth (36-bit × 2 transfers/cycle × 533 MHz) |
| Read Latency | 2.5 clock cycles - determines minimum time from /R assertion to first valid Q word |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.5 V (I/O) - mandates separate power domains |
| I/O Standard | HSTL Class I - requires VREF ≈ VDDQ/2 and matched trace impedance |
| Package | 165-pin FBGA, 15 × 17 × 1.4 mm - requires 0.8 mm ball pitch layout and thermal pad under die |
| ODT Support | Yes, with selectable Thevenin ranges (52–105 Ω or 105–150 Ω) - reduces external termination components |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, tray packaging.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, /K | Synchronous input clock pair | Registers all address/control on K↑; registers write data on both K↑ and /K↑; defines all timing references |
| CQ, /CQ | Synchronous echo clock outputs | Edge-aligned with output data; used for source-synchronous capture; remain active during Q tri-state |
| Q0–Q35 | Read data outputs | 36-bit parallel output bus; driven only during /R-initiated read bursts; high-Z otherwise |
| D0–D35 | Write data inputs | 36-bit parallel input bus; sampled on K↑ and /K↑ edges during /W assertion |
| /R, /W | Read/write command inputs | Active-low synchronous commands; registered on K↑; mutually exclusive per cycle |
| /BW0–/BW3 | Byte write enable inputs | Four independent 9-bit byte masks; allow partial writes without read-modify-write overhead |
| ODT | On-die termination control | Selects ODT range (low/high) or disables ODT; critical for impedance tuning with ZQ resistor |
| ZQ | Output impedance calibration reference | Connected to precision resistor to ground (RQ ≈ 250 Ω); sets Q/CQ drive strength and ODT values |
| QVLD | Data validity indicator | Asserted half-cycle before first read data and deasserted half-cycle after last - enables precise latch timing |
| VDD, VDDQ, VSS, VREF | Power and reference supplies | VDD (1.8 V core), VDDQ (1.4–1.5 V I/O), VREF (≈ VDDQ/2), multiple VSS balls required for noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| 4-word burst architecture | Reduces address bus frequency by 4× versus single-word access - simplifies controller address generation |
| On-die termination (ODT) | Eliminates need for external parallel termination resistors on DQ/CQ lines - saves PCB area and improves signal fidelity at 533 MHz |
| Programmable output impedance | ZQ pin allows dynamic tuning of Q/CQ drive strength to match system trace impedance - minimizes reflections |
| QVLD data validity signal | Provides explicit timing marker for valid data window - removes dependency on setup/hold margin estimation |
| JTAG 1149.1 test port | Enables boundary-scan testing and debug without dedicated test pads - supports production ICT and board-level diagnostics |
Applications
| Packet Buffer in L3 Switch | Line Card Memory in Carrier-Grade Router |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet line cards. IC Role / Device Role / Timing Role: High-speed synchronous SRAM providing zero-wait-state buffering with concurrent read/write ports. Use Value: 4.264 GB/s bandwidth and 2.5-cycle read latency enable real-time packet classification and forwarding at 100 Gbps line rates. | Use Scenario: Serving as shared buffer memory for traffic management ASICs handling OC-192/STM-64 interfaces. IC Role / Device Role / Timing Role: QDR II+ SRAM acting as depth-expanded memory bank with burst-aligned access for scheduler queues. Use Value: ODT and programmable impedance ensure signal integrity across 15 cm backplane traces at 533 MHz, reducing eye closure. |
| Baseband Processing in 4G LTE eNodeB | Real-Time Video Frame Buffer |
Use Scenario: Temporary storage of FFT/IFFT intermediate results in digital pre-distortion (DPD) chains. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with FPGA-based signal processors. Use Value: Independent read/write ports allow simultaneous coefficient loading and result streaming - eliminating pipeline stalls. | Use Scenario: Holding uncompressed 1080p60 YUV422 frames for real-time chroma keying and overlay compositing. IC Role / Device Role / Timing Role: Synchronous burst-access memory delivering 36-bit pixel words at 148.5 MHz pixel clock. Use Value: QVLD signal synchronizes frame grabber latches precisely to CQ edge - achieving sub-nanosecond capture jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-533BZXC | Same density, 36-bit, 533 MHz, but no ODT; uses CQ/CQ# instead of CQ//CQ; different pinout (165 FBGA, 13×15 mm) | Lacks on-die termination - requires external parallel resistors; smaller package footprint but incompatible layout | Select when ODT is unnecessary and board space is constrained; verify clocking compatibility with K/K# vs C/C# timing model |
| AS7C36256P-15PCN | Asynchronous 72-Mbit SRAM; 15 ns access time; no burst, no clocks, no ODT; 100-pin TQFP | Fundamentally different interface - not synchronous or burst-capable; unsuitable for high-speed packet buffering | Only consider for legacy designs requiring simple parallel interface; cannot replace R1QDA7236ABG-19IB0 in QDR timing-critical systems |
Compared with CY7C2665KV18-533BZXC, R1QDA7236ABG-19IB0 provides integrated ODT and guaranteed 15×17 mm FBGA layout compatibility, while AS7C36256P-15PCN lacks all QDR II+ features - making it non-interchangeable in high-frequency synchronous applications.
Availability
R1QDA7236ABG-19IB0 is available at Aetrix Electronics and suitable for high-speed networking infrastructure, telecom baseband processing, and real-time video processing requiring stable component supply, long-term lifecycle assurance, and industrial-temperature operation.
Supply support for R1QDA7236ABG-19IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The R1QDA72 series belongs to Renesas' QDR™ II+ SRAM product line, designed specifically for high-bandwidth, low-latency buffering in packet-switched network equipment where deterministic burst access and signal integrity at >500 MHz are critical.
FAQ
What is the maximum operating frequency of the R1QDA7236ABG-19IB0?
The R1QDA7236ABG-19IB0 is rated for a maximum operating frequency of 533 MHz, corresponding to a minimum clock cycle time of 1.875 ns. This speed is validated under industrial temperature conditions (−40°C to +85°C) and with proper power supply decoupling and signal integrity design. Operation above this frequency violates AC timing specifications and may cause data corruption.
Does the R1QDA7236ABG-19IB0 support on-die termination (ODT)?
Yes, the R1QDA7236ABG-19IB0 supports on-die termination (ODT) as indicated by the "D" in its part number prefix and confirmed in the datasheet's ODT pin table. The ODT function is controlled by the ODT input pin and tracks the ZQ calibration resistor value, offering two selectable Thevenin-equivalent impedance ranges (52–105 Ω or 105–150 Ω) for optimal signal integrity.
What is the purpose of the QVLD signal on the R1QDA7236ABG-19IB0?
The QVLD (Q Valid) signal on the R1QDA7236ABG-19IB0 indicates the exact window during which output data on Q0–Q35 is valid. It asserts half a clock cycle before the first read data word and deasserts half a cycle after the last, edge-aligned with CQ and /CQ. This eliminates timing margin uncertainty and enables precise latch control in high-speed receivers.
What package type and dimensions does the R1QDA7236ABG-19IB0 use?
The R1QDA7236ABG-19IB0 uses a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm with 0.8 mm ball pitch. It is Pb-free and supplied in trays. The package marking includes "R1QDA7236ABG-19IB0" and complies with RoHS Level 6/6.
How does the R1QDA7236ABG-19IB0 handle burst addressing?
The R1QDA7236ABG-19IB0 implements fixed 4-word burst addressing: when /R or /W is asserted, the internal burst counter automatically increments the base address to access four consecutive words (A, A+1, A+2, A+3) over two clock cycles. This eliminates external address sequencing logic and ensures deterministic access timing aligned to K and /K edges.
R1QDA7236ABG-19IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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R1QDA7236ABG-19IB0 FAQ
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7.What is the process for return or replacement of R1QDA7236ABG-19IB0?
All R1QDA7236ABG-19IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QDA7236ABG-19IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QDA7236ABG-19IB0 part is unused and in its original packaging.
Return procedure for R1QDA7236ABG-19IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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