Renesas R1QEA3636CBG-19IB0

Overview

R1QEA3636CBG-19IB0 from Renesas Electronics is a 36-Mbit DDR II+ synchronous SRAM with 1,048,576 × 36-bit organization, 2-word burst, 2.5-cycle read latency, on-die termination (ODT), and HSTL I/O. It operates at up to 500 MHz (200 ps cycle time) with 1.8 V core and 1.5 V I/O supply, targeting high-speed packet buffering in network switches and routers.

For engineers reviewing the R1QEA3636CBG-19IB0 datasheet, R1QEA3636CBG-19IB0 pinout, R1QEA3636CBG-19IB0 application, or R1QEA3636CBG-19IB0 equivalent, key selection criteria include DDR II+ timing compliance, 165-ball FBGA (15 × 17 mm) package compatibility, ODT impedance control via ZQ/ODT pins, QVLD echo timing support, and burst-of-two operation for low-latency memory access.

Technical Context

This device implements a double-data-rate interface synchronized to K and /K clock inputs, with echo clocks CQ and /CQ aligned to output data edges. Its DLL/PLL circuitry enables wide data valid windows and supports frequency scaling up to 500 MHz while maintaining precise timing margins.

The R1QEA3636CBG-19IB0 uses common I/O bus architecture with programmable output impedance (via ZQ resistor) and on-die termination (ODT) controlled by the ODT pin. It features JTAG 1149.1 test access, burst-of-two linear addressing, and clock-stop capability with Ps restart for power management.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm body size, 1.4 mm height, RoHS-compliant plastic molding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II+ SRAM applications.

Compared with IDT 72T3645L10PFI and Cypress CY7C2663KV18-500BZC, the R1QEA3636CBG-19IB0 uniquely combines DDR II+ timing, on-die termination, and QVLD in a drop-in-compatible 165-BGA package-enabling lower BOM cost, reduced layout complexity, and simplified timing closure for new high-speed networking designs.

Availability

R1QEA3636CBG-19IB0 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed switch fabric, and ATE pattern storage requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for R1QEA3636CBG-19IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The R1QEA36xx CBG series belongs to Renesas' DDR II+/QDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in next-generation networking infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the maximum operating frequency of the R1QEA3636CBG-19IB0?

The R1QEA3636CBG-19IB0 supports a maximum clock frequency of 500 MHz, corresponding to a minimum cycle time of 200 ps. This rating is validated under industrial temperature conditions (−40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V, as specified in the R10DS0159EJ0009 datasheet revision 0.09a.

Does the R1QEA3636CBG-19IB0 support on-die termination (ODT)?

Yes, the R1QEA3636CBG-19IB0 supports on-die termination (ODT) via the ODT pin and ZQ calibration resistor. When enabled, it provides selectable Thevenin termination (52–105 Ω or 105–150 Ω) on input signals during write operations, eliminating the need for external termination resistors on the data bus.

What is the function of the QVLD pin on the R1QEA3636CBG-19IB0?

The QVLD pin on the R1QEA3636CBG-19IB0 is a synchronous output valid indicator that asserts half a clock cycle before the first read data and deasserts half a cycle before the last, edge-aligned with CQ and /CQ. It provides precise timing for data capture in high-speed systems without requiring complex strobe recovery circuits.

What package type and dimensions does the R1QEA3636CBG-19IB0 use?

The R1QEA3636CBG-19IB0 uses a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm. The "G" suffix in the part number confirms the 15 × 17 mm body size, and the "I" in "19IB0" denotes industrial temperature grade (−40°C to +85°C).

How does the R1QEA3636CBG-19IB0 handle burst addressing and byte writes?

The R1QEA3636CBG-19IB0 implements linear burst-of-two addressing with SA0 used as the LSB for burst start address. Byte writes are controlled by four active-low signals (/BW0–/BW3), each enabling one 9-bit byte lane (DQ0–DQ8, DQ9–DQ17, DQ18–DQ26, DQ27–DQ35); assertion of any /BWx enables writing to its respective byte group during a burst write cycle.