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Renesas R1QEA3636CBG-20IB0
- Part No.:
- R1QEA3636CBG-20IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QEA3636CBG-20IB0.pdf
- Description:
- 36-MBIT DDR II + SRAM MEMORY
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Product details
Overview
R1QEA3636CBG-20IB0 from Renesas Electronics is a 36-Mbit DDR II+ synchronous SRAM with 1,048,576 × 36-bit organization, 2-word burst, 2.5-cycle read latency, on-die termination (ODT), and HSTL I/O. It operates at up to 500 MHz (200 ps cycle time), uses 1.8 V core and 1.5 V I/O supplies, and is packaged in a 165-ball FBGA (15 × 17 mm) for high-speed networking buffer applications.
For engineers reviewing the R1QEA3636CBG-20IB0 datasheet, R1QEA3636CBG-20IB0 pinout, R1QEA3636CBG-20IB0 application, or R1QEA3636CBG-20IB0 equivalent, key selection criteria include DDR II+ timing compliance, ODT enable/disable control via ODT pin, QVLD-valid-data indicator synchronization with CQ/¬CQ, ZQ-programmable output impedance, and 165-ball FBGA mechanical compatibility with high-density PCB layouts.
Technical Context
This device implements a double-data-rate interface synchronized to K/¬K input clocks, with echo clocks CQ/¬CQ aligned to output data edges. Its DLL/PLL circuitry enables wide data valid windows and supports frequency scaling beyond 500 MHz while maintaining tight skew between data and echo clocks.
The R1QEA3636CBG-20IB0 uses a common I/O bus architecture with programmable byte-write (/BW0–/BW3), synchronous load (/LD), and read/write control (R-/W). ODT is automatically enabled during input cycles and disabled during output cycles, eliminating external termination components in DDR II+ systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 36 Mbit (1,048,576 × 36-bit), enabling compact high-bandwidth buffering in packet-switching ASICs |
| Max operating frequency | 500 MHz - supports 1 Gbps per data line in burst-of-2 mode |
| Read latency | 2.5 clock cycles - determines minimum pipeline depth for read-response timing closure |
| I/O voltage | 1.5 V (VDDQ), compatible with HSTL Class I receivers and standard 1.5 V memory interfaces |
| Core voltage | 1.8 V (VDD), optimized for low-power high-speed CMOS operation with <200 mV noise margin |
| Burst length | 2-word burst - reduces address bus overhead and simplifies controller logic vs. longer bursts |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides 0.8 mm ball pitch for controlled-impedance routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K / ¬K | Primary input clock pair | Latches all address, control, and write data on rising edges; defines synchronous timing reference for all operations |
| CQ / ¬CQ | Synchronous echo clock outputs | Edge-aligned with DQ outputs to simplify high-speed data capture; remain active during clock-stop mode |
| QVLD | Data validity indicator | Asserts half-cycle before first valid read data and deasserts half-cycle before last - enables precise latch window control |
| ODT | On-die termination control | Configures Thevenin termination resistance (52–150 Ω) for input signals; auto-enabled during writes in common-I/O mode |
| ZQ | Output impedance calibration reference | Connected to precision resistor to ground (RQ = 250 Ω typical) to set DQ/CQ driver impedance to 0.2 × RQ |
| /LD | Synchronous load strobe | Initiates burst transaction; samples SAx, R-/W, and /BWx on K rising edge to define access type and address |
| R-/W | Read/write direction control | High = read, low = write; sampled synchronously with /LD to determine burst operation mode |
| /BW0–/BW3 | Byte write enable inputs | Individually mask 9-bit bytes during write bursts; support partial-word updates without read-modify-write |
| DQ0–DQ35 | Common I/O data bus | 36-bit bidirectional HSTL I/O; shared for reads and writes - requires direction control via R-/W and ODT state |
| VDD / VDDQ / VSS | Power supply terminals | VDD = 1.8 V core; VDDQ = 1.5 V I/O; VSS = ground - require separate decoupling per supply domain |
Key Features
| Feature | Design Value |
|---|---|
| DDR II+ interface with K/¬K clocking | Eliminates need for external phase-locked loops by embedding DLL/PLL for precise data-eye alignment at 500 MHz |
| On-die termination (ODT) | Reduces board-level termination components and signal reflections; supports automatic enable/disable based on I/O direction |
| QVLD data-valid indicator | Provides deterministic timing reference for external latches - removes setup/hold uncertainty in >400 MHz systems |
| ZQ-calibrated output impedance | Enables trace impedance matching within ±15% tolerance using single external resistor - improves signal integrity across PVT corners |
| JTAG 1149.1 test port | Supports boundary-scan testing and in-system debug without requiring additional test pads or probes |
Applications
| Packet Buffer in Network Switch ASIC | Line Card Memory in Telecom Base Stations |
|---|---|
Use Scenario: Stores ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed synchronous SRAM providing 1 Gbps sustained bandwidth with sub-2-ns read latency for cut-through forwarding. Use Value: 2-word burst and QVLD eliminate FIFO staging logic; ODT ensures clean signal integrity on dense backplane traces. | Use Scenario: Buffers CPRI/IrDI baseband IQ samples between FPGA and RF transceivers in 4G/LTE macro cells. IC Role / Device Role / Timing Role: DDR II+ SRAM acting as dual-port ping-pong buffer synchronized to 307.2 MHz sampling clock. Use Value: ZQ-calibrated outputs match 50 Ω differential traces; CQ/¬CQ echo clocks simplify FPGA capture timing closure. |
| Control Plane Memory in Router Line Cards | Real-Time Video Frame Buffer in Broadcast Encoders |
Use Scenario: Holds forwarding table entries and session state for distributed control plane processors. IC Role / Device Role / Timing Role: Low-latency SRAM accessed by MIPS or ARM cores via AXI or AHB bridges with burst-of-2 optimization. Use Value: 1.8 V core + 1.5 V I/O reduces total power vs. 3.3 V QDR; /BW0–/BW3 enable atomic 9-bit metadata updates. | Use Scenario: Stores uncompressed 1080p60 YUV422 frames for real-time color space conversion and compression. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced to video DSPs with precise CQ-aligned data capture windows. Use Value: QVLD signal eliminates need for dynamic delay-line tuning; 165-ball FBGA fits constrained encoder module footprints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT 72T3645L10PFI | QDR II+ interface, 36-Mbit, 10 ns access, no ODT, 1.8 V only | Lacks ODT and QVLD; requires external termination and manual timing margining | Choose when legacy QDR II+ system design already uses IDT timing models and external termination networks |
| Cypress CY7C2663KV18-500BZI | QDR II+ interface, 36-Mbit, 500 MHz, no ZQ calibration, fixed 40 Ω output drive | Fixed output impedance limits trace-matching flexibility; no programmable ODT range | Prefer when board layout uses fixed 40 Ω routing and ODT is handled externally or not required |
Compared with IDT 72T3645L10PFI and Cypress CY7C2663KV18-500BZI, the R1QEA3636CBG-20IB0 delivers integrated signal integrity features - ODT with selectable ranges, ZQ-calibrated outputs, and QVLD - reducing BOM count and timing closure effort in new 500 MHz DDR II+ designs.
Availability
R1QEA3636CBG-20IB0 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure, and broadcast video systems requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for R1QEA3636CBG-20IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.
The R1QEA3636CBG-20IB0 belongs to Renesas' DDR II+/QDR II+ SRAM product line, engineered specifically for low-latency, high-bandwidth buffering in packet-processing and baseband subsystems where deterministic timing and signal integrity are critical.
FAQ
What is the maximum supported clock frequency for R1QEA3636CBG-20IB0?
The R1QEA3636CBG-20IB0 supports a maximum operating frequency of 500 MHz, corresponding to a 200 ps minimum cycle time. This rating is validated under industrial temperature range (−40°C to +85°C) and specified with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V. Operation above this frequency violates AC timing specifications and may result in data corruption.
Does R1QEA3636CBG-20IB0 support on-die termination (ODT) and how is it configured?
Yes, R1QEA3636CBG-20IB0 supports ODT with two selectable Thevenin-equivalent resistance ranges: low range (52–105 Ω) when ODT pin is low, and high range (105–150 Ω) when ODT pin is high. In common-I/O mode, ODT activates automatically during write cycles and deactivates during read cycles - no software control is needed for basic operation.
How does the QVLD signal function in R1QEA3636CBG-20IB0 and what timing relationship does it have to CQ?
The QVLD signal in R1QEA3636CBG-20IB0 indicates valid output data presence. It asserts half a clock cycle before the first valid read data and deasserts half a cycle before the last, and is edge-aligned with both CQ and ¬CQ outputs. This allows external logic to open a precise latch window without margining for propagation delays.
What is the purpose of the ZQ pin on R1QEA3636CBG-20IB0 and what resistor value is recommended?
The ZQ pin on R1QEA3636CBG-20IB0 calibrates output driver impedance to match system trace impedance. A precision resistor (RQ) must be connected from ZQ to ground; Renesas specifies 250 Ω as the typical value to achieve 50 Ω DQ/CQ output drive (0.2 × RQ). The allowable RQ range for ±15% tolerance is 212–288 Ω.
Is R1QEA3636CBG-20IB0 pin-compatible with other members of the R1QxA3636CBG family such as R1QBA3636CBG-20IB0?
No, R1QEA3636CBG-20IB0 is not pin-compatible with R1QBA3636CBG-20IB0. While both share the same 165-ball FBGA package and pinout layout, the R1QEA variant includes ODT and QVLD functionality with associated internal logic differences. The R1QBA variant lacks ODT and QVLD pins - those balls are designated NC in its pin map, making direct substitution electrically invalid.
R1QEA3636CBG-20IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1QEA3636CBG-20IB0 FAQ
1.How can I place an order for R1QEA3636CBG-20IB0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1QEA3636CBG-20IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1QEA3636CBG-20IB0 reliable?
The price and inventory of R1QEA3636CBG-20IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QEA3636CBG-20IB0 is usually 5 days.
3.What payment methods are accepted for R1QEA3636CBG-20IB0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1QEA3636CBG-20IB0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1QEA3636CBG-20IB0?
R1QEA3636CBG-20IB0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1QEA3636CBG-20IB0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1QEA3636CBG-20IB0?
For technical support, including R1QEA3636CBG-20IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QEA3636CBG-20IB0 requirements.
6.How does Aetrix verify that R1QEA3636CBG-20IB0 is sourced from the original manufacturer or authorized distributors?
All R1QEA3636CBG-20IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QEA3636CBG-20IB0 meets industry standards.
7.What is the process for return or replacement of R1QEA3636CBG-20IB0?
All R1QEA3636CBG-20IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QEA3636CBG-20IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QEA3636CBG-20IB0 part is unused and in its original packaging.
Return procedure for R1QEA3636CBG-20IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1QEA3636CBG-20IB0 Tags
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