Renesas R1QEA7218ABG-22IB0
- Part No.:
- R1QEA7218ABG-22IB0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1QEA7218ABG-22IB0.pdf
- Description:
- STANDARD SRAM, 4MX18, 0.45NS
- Quantity:
- Payment:

- Shipping:

Inventory:1,061
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Product details
Overview
R1QEA7218ABG-22IB0 from Renesas Electronics is a 72-Mbit DDR II+ synchronous SRAM with 4,194,304-word × 18-bit organization, 2.5-cycle read latency, 450 MHz max clock frequency (2.22 ns cycle time), HSTL I/O interface, and on-die termination (ODT). It operates at 1.8 V core (VDD) and 1.4–1.5 V I/O (VDDQ), targeting high-speed packet buffering in network switches and routers.
For engineers reviewing the R1QEA7218ABG-22IB0 datasheet, R1QEA7218ABG-22IB0 pinout, R1QEA7218ABG-22IB0 application, or R1QEA7218ABG-22IB0 equivalent, key selection criteria include burst length = 2, ODT support with programmable impedance via ZQ pin, QVLD data-valid indicator timing alignment with CQ/¬CQ, and industrial temperature range (−40°C to +85°C).
Technical Context
This DDR II+ SRAM uses dual-edge clocking (K and ¬K) for double-data-rate operation, with all inputs registered on K's rising edge and data sampled on both K and ¬K rising edges. Its DLL/PLL circuitry enables wide output data valid window and supports future frequency scaling up to 450 MHz.
The device implements burst-of-two linear addressing, internally self-timed write control, and JTAG 1149.1 test access. ODT activation is automatic during input cycles and disabled during output cycles, with impedance tracking RQ resistor value (0.3×RQ low range or 0.6×RQ high range) per ODT pin state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4,194,304 × 18) |
| Max Clock Frequency | 450 MHz - supports 900 MT/s data rate with 2.22 ns cycle time |
| Read Latency | 2.5 cycles - determines minimum delay between address load and first valid output |
| I/O Voltage Range | VDDQ = 1.4 V to 1.5 V - matches HSTL Class I receiver thresholds |
| Burst Length | 2 - delivers two words per access, minimizing bus turnaround overhead |
| ODT Support | Yes, with selectable 52–150 Ω Thevenin termination - reduces signal reflection on high-speed traces |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade embedded networking equipment |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K / ¬K | Input clock pair | Registers all inputs on K rising edge; clocks data on both K and ¬K rising edges for DDR operation |
| CQ / ¬CQ | Output echo clocks | Tightly matched to DQ outputs; used as timing reference for data capture in high-speed systems |
| QVLD | Output valid indicator | Asserts half-cycle before first read data and deasserts half-cycle before last - enables precise latch window control |
| ODT | On-die termination control | Selects ODT impedance range (low/high/floating); automatically enabled during input cycles only |
| ZQ | Impedance calibration input | Connects to precision resistor (RQ) to set DQ/CQ output impedance to 0.2×RQ and track ODT values |
| /LD | Synchronous load | Initiates bus cycle definition - latches SA, R-/W, and /BW on next K edge |
| R-/W | Read/write direction | High = read, low = write; sampled synchronously with /LD to define transaction type |
| DQ0–DQ17 | Bi-directional data I/O | Shared bus for burst-of-two reads/writes; HSTL-compatible with programmable drive strength |
Key Features
| Feature | Design Value |
|---|---|
| Two-tick burst mode | Minimizes bus occupancy and latency for small packet buffering in switch fabric interfaces |
| Programmable output impedance | Enables precise trace impedance matching without external resistors, reducing BOM count and layout complexity |
| QVLD data-valid indicator | Provides deterministic timing reference aligned with CQ/¬CQ edges - eliminates need for complex strobe deskew circuits |
| Automatic ODT switching | Eliminates external ODT control logic - ODT activates only during input cycles, reducing power and noise |
| JTAG 1149.1 test port | Supports boundary-scan testing and in-system debug without requiring dedicated test pads or probes |
Applications
| Layer 2 Ethernet Switch Buffering | Backplane Interconnect Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-port Gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to MAC controllers via DDR II+ bus. Use Value: 450 MHz clock and 2.5-cycle latency enable sub-5 ns read access, supporting line-rate 10 Gbps forwarding decisions. | Use Scenario: Acting as a shared frame buffer between line cards and switch fabric ASICs in modular chassis systems. IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic read/write timing across distributed clock domains using K/¬K edge alignment. Use Value: CQ/¬CQ echo clocks and QVLD eliminate inter-chip skew compensation, simplifying timing closure on 15 cm backplane traces. |
| Industrial PLC Real-Time Data Cache | Telecom Line Card Packet Assembly |
Use Scenario: Caching sensor I/O status and control command history in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM with ODT and HSTL I/O ensuring signal integrity in electrically noisy factory environments. Use Value: −40°C to +85°C rating and automatic ODT reduce need for thermal derating or external termination networks. | Use Scenario: Assembling fragmented IP packets from multiple TDM or Ethernet streams prior to SONET/OTN framing. IC Role / Device Role / Timing Role: Burst-mode SRAM buffering variable-length payloads with precise write-enable timing via /BW0–/BW1 byte masking. Use Value: Dual-byte write control allows partial-word updates without read-modify-write cycles, improving throughput in packet reassembly engines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-25JCIN | 512 K × 36-bit, 25 ns async access, no ODT, no QVLD, 3.3 V only | Lower density, asynchronous interface, unsuitable for >200 MHz burst systems | Select only for legacy 3.3 V designs where DDR timing and ODT are unnecessary |
| IS61WV102418BLL-10BLI | 1 M × 18-bit, 10 ns async access, 3.3/2.5/1.8 V, no DDR interface or ODT | Asynchronous operation, no burst control or echo clocks - requires external timing management | Choose when system clock domain is not synchronized or when cost-sensitive non-burst buffering suffices |
Compared with AS7C3256B-25JCIN and IS61WV102418BLL-10BLI, the R1QEA7218ABG-22IB0 delivers 72 Mbit density, DDR II+ burst timing, integrated ODT, and QVLD-enabling direct replacement of discrete termination and strobe generation in high-speed networking hardware without PCB redesign.
Availability
R1QEA7218ABG-22IB0 is available at Aetrix Electronics and suitable for industrial networking equipment, telecom line cards, and real-time control systems requiring stable component supply, long-life availability, and RoHS-compliant packaging.
Supply support for R1QEA7218ABG-22IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1QEA72 series targets high-speed packet buffering in networking and communications infrastructure, delivering DDR II+ performance with industrial reliability and integrated signal integrity features like ODT and QVLD.
FAQ
What is the maximum operating frequency of the R1QEA7218ABG-22IB0?
The R1QEA7218ABG-22IB0 supports a maximum clock frequency of 450 MHz, corresponding to a minimum cycle time of 2.22 ns. This rating is guaranteed under industrial temperature conditions (−40°C to +85°C) and VDD = 1.7–1.9 V, VDDQ = 1.4–1.5 V. Operation above this frequency violates AC timing specifications and may result in data corruption.
Does the R1QEA7218ABG-22IB0 support on-die termination (ODT)?
Yes, the R1QEA7218ABG-22IB0 supports ODT with selectable impedance ranges (52–105 Ω or 105–150 Ω Thevenin equivalent) controlled by the ODT pin and calibrated via the ZQ pin. ODT activates automatically during input cycles and disables during output cycles, eliminating external termination components and simplifying high-speed layout.
What is the function of the QVLD pin on the R1QEA7218ABG-22IB0?
The QVLD pin on the R1QEA7218ABG-22IB0 is a synchronous output valid indicator that asserts half a clock cycle before the first read data and deasserts half a cycle before the last. It is edge-aligned with CQ and ¬CQ, enabling precise latch window control in high-speed receivers without additional timing margin calculation.
How does the R1QEA7218ABG-22IB0 handle burst addressing?
The R1QEA7218ABG-22IB0 implements linear burst-of-two addressing: after loading SA[0:17], the internal counter advances to the next sequential address for the second word. SA0 and SA1 determine the starting offset within the burst, permitting random start addresses for ×18 configurations-unlike ×9 variants where SA0/SA1 are fixed to zero.
What package type and dimensions does the R1QEA7218ABG-22IB0 use?
The R1QEA7218ABG-22IB0 uses a 165-ball FBGA package measuring 15 mm × 17 mm × 1.4 mm, with Pb-free (RoHS 6/6) construction. Ball pitch is 0.8 mm, and the marking "R1QEA7218ABG-22IB0 PB-F" appears on the top surface, confirming industrial temperature grade and lead-free compliance.
R1QEA7218ABG-22IB0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1QEA7218ABG-22IB0 FAQ
1.How can I place an order for R1QEA7218ABG-22IB0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1QEA7218ABG-22IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of R1QEA7218ABG-22IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QEA7218ABG-22IB0 is usually 5 days.
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5.How can I obtain technical support or documentation for R1QEA7218ABG-22IB0?
For technical support, including R1QEA7218ABG-22IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QEA7218ABG-22IB0 requirements.
6.How does Aetrix verify that R1QEA7218ABG-22IB0 is sourced from the original manufacturer or authorized distributors?
All R1QEA7218ABG-22IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QEA7218ABG-22IB0 meets industry standards.
7.What is the process for return or replacement of R1QEA7218ABG-22IB0?
All R1QEA7218ABG-22IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QEA7218ABG-22IB0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1QEA7218ABG-22IB0 part is unused and in its original packaging.
Return procedure for R1QEA7218ABG-22IB0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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