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Renesas R1QEA7236ABG-20IB0

Part No.:
R1QEA7236ABG-20IB0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1QEA7236ABG-20IB0.pdf
Description:
STANDARD SRAM, 2MX36, 0.45NS
Quantity:
Payment:
Payment
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Inventory:923

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Product details

Overview

R1QEA7236ABG-20IB0 from Renesas Electronics is a 72-Mbit DDR II+ synchronous SRAM with 2,097,152-word × 36-bit organization, 2.5-cycle read latency, 500 MHz max clock frequency, HSTL I/O interface, and on-die termination (ODT). It operates at 1.8 V core (VDD) and 1.4–1.5 V I/O (VDDQ), and is used in high-bandwidth packet buffering and network switch data path memory subsystems.

For engineers reviewing the R1QEA7236ABG-20IB0 datasheet, R1QEA7236ABG-20IB0 pinout, R1QEA7236ABG-20IB0 application, or R1QEA7236ABG-20IB0 equivalent, key selection criteria include burst length = 2, ODT support with programmable impedance, QVLD timing indicator, 165-pin FBGA (15 × 17 mm), and industrial temperature range (−40°C to +85°C).

Technical Context

This device implements a synchronous double-data-rate architecture using K and /K input clocks for all register latching-address, control, and data-with no C/C̅ pins (DDR II+ variant). Its DLL/PLL circuitry enables wide output data valid window and supports future frequency scaling up to 500 MHz.

The R1QEA7236ABG-20IB0 uses common I/O bus architecture with byte-write capability via /BW0–/BW3, JTAG 1149.1 test access, and QVLD output aligned with CQ/C̅Q to indicate valid read data timing. ODT activation is automatic during write cycles and disabled during reads.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (2,097,152 × 36)
InterfaceDDR II+, synchronous with K and /K only - no C/C̅ pins
Max Clock Frequency500 MHz (cycle time = 2.0 ns), validated for industrial temp
Read Latency2.5 cycles - determines minimum delay between address load and first valid output
I/O StandardHSTL Class I - requires VREF = VDDQ/2 ± 75 mV for reliable signal integrity
On-Die TerminationEnabled (ODT pin present); supports 52–150 Ω Thevenin-equivalent termination
Supply VoltagesVDD = 1.7–1.9 V (core); VDDQ = 1.4–1.5 V (I/O buffer supply)

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, Pb-free, industrial-grade marking (suffix "I" denotes −40°C to +85°C).

Pin/TerminalCircuit RoleDesign Meaning
K, /KInput clock pairLatches all synchronous inputs (SA, R-/W, /BWx, /LD) and data on rising edges; no C/C̅ pins present
SA0–SA19Synchronous address inputsRegistered on K edge; SA0/SA1 enable random burst start for ×36 configuration
R-/W, /LDControl inputs/LD low loads address and direction; R-/W high = read, low = write
/BW0–/BW3Byte write enablesActive-low per 9-bit byte; enables selective write of DQ[0:8], [9:17], [18:26], [27:35]
DQ0–DQ35Bi-directional data busCommon I/O; outputs valid on K and /K rising edges; QVLD synchronized to CQ/C̅Q
CQ, /CQOutput echo clocksTightly matched to DQ timing; used as data valid reference; continue running during tri-state
QVLDOutput valid indicatorAsserted half-cycle before first read data, deasserted half-cycle after last - simplifies capture logic
ODTOn-die termination controlHigh = high-range ODT (105–150 Ω); low = low-range (52–105 Ω); floating = high-range default
ZQImpedance calibration inputConnected to precision resistor to ground (RQ = 250 Ω typical) to set DQ/CQ output impedance
/DOFFDLL/PLL disableLow bypasses DLL/PLL for stable operation below 120 MHz; high enables full-speed timing
VDD, VDDQ, VSS, VREFPower and referenceVDD (1.8 V core), VDDQ (1.5 V I/O), VREF (0.75 V nominal), all require decoupling

Key Features

FeatureDesign Value
2-word burst architectureMinimizes transaction overhead in packet-forwarding engines and cache line fills
Programmable output impedance via ZQEnables precise 50 Ω system trace matching without external resistors
QVLD timing indicatorReduces setup/hold margin requirements for FPGA or ASIC capture logic by providing explicit data-valid window
Automatic ODT controlEliminates need for external termination resistors and dynamic control logic in common-I/O DDR II+ mode
JTAG 1149.1 test portSupports boundary-scan testing and in-system debug without additional test fixtures

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory for cut-through forwarding with deterministic 2.5-cycle read response.

Use Value: Enables 500 MHz sustained bandwidth (3.6 GB/s) with burst-2 efficiency and QVLD-assisted data capture.

Use Scenario: Buffering ATM or SONET frame data in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM acting as elastic store between line-rate PHY and processing ASIC.

Use Value: Industrial temperature rating (−40°C to +85°C) and ODT ensure signal integrity across chassis thermal gradients.

Baseband Processing SubsystemIndustrial Real-Time Control Buffer

Use Scenario: Inter-processor communication and FIFO staging between DSP and FPGA in 4G/LTE baseband units.

IC Role / Device Role / Timing Role: Dual-port-capable memory accessed via K-clock-synchronized read/write bursts with byte-select writes.

Use Value: /BW0–/BW3 enables partial-word updates without read-modify-write, reducing latency in real-time scheduling buffers.

Use Scenario: Deterministic data logging and motion-control command queuing in CNC and robotics drives.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing glitch-free, jitter-tolerant memory for safety-critical motion profiles.

Use Value: DLL/PLL disable (/DOFF) allows stable sub-120 MHz operation during startup or fault recovery sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II+ SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT 72T3652L15PFSame density (72 Mbit × 36), 1.8 V core, but QDR II architecture (separate read/write ports); no ODT; 350 MHz maxOptimized for simultaneous read/write in pipeline architectures; not suitable for common-bus DDR systemsSelect only if dual-port access pattern is required and ODT is unnecessary
Cypress CY7C2665KV18-500BZI72 Mbit × 36 DDR II+ SRAM, same 500 MHz speed and 2.5-cycle latency, but 165-ball FBGA with different pinout and no QVLD outputLacks QVLD timing indicator; requires tighter PCB layout margin for data capture; identical ODT/ZQ implementationUse when QVLD is not needed and board layout accommodates alternate pin mapping

Compared with IDT 72T3652L15PF and Cypress CY7C2665KV18-500BZI, the R1QEA7236ABG-20IB0 uniquely combines QVLD timing indication, industrial-temperature ODT support, and strict DDR II+ common-I/O compliance in a single package-enabling simpler, more robust high-speed data capture in networking and telecom designs.

Availability

R1QEA7236ABG-20IB0 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial real-time control applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant industrial-temperature operation.

Supply support for R1QEA7236ABG-20IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.

The R1QEA72 series targets high-performance memory subsystems in networking and communications equipment, designed specifically for DDR II+ synchronous operation with ODT, QVLD, and industrial reliability.

FAQ

What is the maximum operating frequency of the R1QEA7236ABG-20IB0?

The R1QEA7236ABG-20IB0 is rated for a maximum clock frequency of 500 MHz, corresponding to a 2.0 ns cycle time. This specification is guaranteed over the full industrial temperature range (−40°C to +85°C) and under specified VDD (1.7–1.9 V) and VDDQ (1.4–1.5 V) conditions. Operation above this frequency is not supported and may result in timing violations or data corruption.

Does the R1QEA7236ABG-20IB0 support on-die termination (ODT)?

Yes, the R1QEA7236ABG-20IB0 includes on-die termination (ODT) controlled by the ODT pin. It supports two impedance ranges: low (52–105 Ω) when ODT is low, and high (105–150 Ω) when ODT is high. In common-I/O DDR II+ mode, ODT is automatically enabled during write cycles and disabled during read cycles-no external control logic is required for basic operation.

What is the function of the QVLD pin on the R1QEA7236ABG-20IB0?

The QVLD (Q Valid) pin on the R1QEA7236ABG-20IB0 is an output that indicates when read data on DQ[0:35] is valid. It asserts half a clock cycle before the first data word and deasserts half a cycle after the last, aligning precisely with CQ and /CQ edges. This eliminates timing uncertainty in FPGA or ASIC capture logic and reduces required setup/hold margins in high-speed designs.

What package type and dimensions does the R1QEA7236ABG-20IB0 use?

The R1QEA7236ABG-20IB0 uses a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm. The "BG" suffix confirms this package; "I" denotes industrial temperature grade (−40°C to +85°C); and "B0" indicates Pb-free, tape-and-reel packaging. Pin pitch is 0.8 mm, and ball composition is lead-free solder (RoHS 6/6 compliant).

How does the R1QEA7236ABG-20IB0 handle power-up initialization?

The R1QEA7236ABG-20IB0 requires a defined power-up sequence: VSS → VDD → VDDQ & VREF → VIN. After VDDQ and VREF stabilize, at least 20 µs of stable K and /K clocks must be applied (with /DOFF high) before normal operation. During this period, all outputs remain in high-Z. This ensures DLL/PLL lock and internal state machine readiness before accepting commands.

R1QEA7236ABG-20IB0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1QEA7236ABG-20IB0 FAQ

1.How can I place an order for R1QEA7236ABG-20IB0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1QEA7236ABG-20IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1QEA7236ABG-20IB0 reliable?

The price and inventory of R1QEA7236ABG-20IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QEA7236ABG-20IB0 is usually 5 days.

3.What payment methods are accepted for R1QEA7236ABG-20IB0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1QEA7236ABG-20IB0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1QEA7236ABG-20IB0?

R1QEA7236ABG-20IB0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1QEA7236ABG-20IB0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1QEA7236ABG-20IB0?

For technical support, including R1QEA7236ABG-20IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QEA7236ABG-20IB0 requirements.

6.How does Aetrix verify that R1QEA7236ABG-20IB0 is sourced from the original manufacturer or authorized distributors?

All R1QEA7236ABG-20IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QEA7236ABG-20IB0 meets industry standards.

7.What is the process for return or replacement of R1QEA7236ABG-20IB0?

All R1QEA7236ABG-20IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QEA7236ABG-20IB0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1QEA7236ABG-20IB0 part is unused and in its original packaging.

Return procedure for R1QEA7236ABG-20IB0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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