Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas R1QGA3636CBG-25IB0

Part No.:
R1QGA3636CBG-25IB0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1QGA3636CBG-25IB0.pdf
Description:
STANDARD SRAM, 1MX36, 0.55NS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,098

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

R1QGA3636CBG-25IB0 from Renesas Electronics is a 36-Mbit QDR™ II+ SRAM with 1,048,576-word × 36-bit organization, synchronous quad data rate operation, 4-word burst, read latency of 2.0 cycles, and HSTL I/O interface. It operates at up to 400 MHz (2.5 ns cycle time), supports separate read/write data ports, and is used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the R1QGA3636CBG-25IB0 datasheet, R1QGA3636CBG-25IB0 pinout, R1QGA3636CBG-25IB0 application, or R1QGA3636CBG-25IB0 equivalent, key selection criteria include burst timing alignment with K/K̅ clocks, QVLD-synchronized data capture, programmable output impedance via ZQ, ODT support for signal integrity, and industrial temperature range (−40°C to +85°C) compliance.

Technical Context

This device implements a true dual-port synchronous architecture with independent read and write data paths, using K and K̅ as input clocks for address/control/data registration on rising edges. It integrates a burst counter and DLL circuitry to maintain wide output data valid windows across frequency scaling.

The R1QGA3636CBG-25IB0 uses HSTL Class I inputs and outputs, features JTAG 1149.1 test access, and supports clock-stop mode with microsecond restart. Its ODT capability is enabled via the ODT pin and tracks ZQ resistor value, offering Thevenin-equivalent termination between 52 Ω and 150 Ω depending on ODT control state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density36 Mbit (1,048,576 × 36-bit), enabling compact high-throughput buffer designs without depth expansion.
Max Clock Frequency400 MHz - delivers 3.2 GB/s peak bandwidth (36-bit × 400 MHz × 2 transitions/cycle).
Read Latency2.0 clock cycles - enables deterministic timing for pipeline-aligned read responses in switch fabric controllers.
I/O VoltageVDDQ = 1.4 V to 1.8 V - compatible with 1.5 V HSTL systems and supports low-power operation.
Burst Length4-word burst - reduces address bus frequency by 75% versus single-word access, easing routing and timing closure.
Operating Temperature−40°C to +85°C - qualified for industrial-grade embedded networking and telecom infrastructure.
Package165-pin FBGA (15 mm × 17 mm × 1.4 mm) - standard footprint for high-density PCB layouts with thermal pad grounding.

Pinout & Package

Package: 165-ball plastic FBGA (15 × 17 mm, 1.4 mm height), RoHS-compliant, Pb-free tray packaging. Ball pitch: 0.8 mm.

Pin/Terminal Circuit Role Design Meaning
K, /KInput clock pairRegisters all address, control, and write data on rising edges; defines synchronous timing boundary for all operations.
/R, /WRead/Write command inputsActive-low synchronous commands sampled on K rising edge; /R initiates burst read, /W initiates burst write.
SA[19:0]Synchronous address inputs20-bit address bus registered on K rising edge; internal logic expands to 22 bits for 4-word burst addressing.
D[35:0]Write data inputs36-bit parallel data path; each byte controlled by dedicated /BWx for selective write masking during burst.
Q[35:0]Read data outputs36-bit parallel output synchronized to CQ/CQ̅ or K/K̅; QVLD indicates valid window aligned to echo clocks.
QVLDValid data indicatorOutput pulse active half-cycle before first read data and deasserted half-cycle before last - enables precise latch timing in receivers.
ZQImpedance calibration referenceConnects to precision resistor (RQ) to set output driver and ODT impedance; RQ = 5 × target Z₀ (±15% tolerance).
ODTOn-die termination controlConfigures ODT range: low (52–105 Ω) or high (105–150 Ω) Thevenin termination, tracking ZQ value.
VDD, VDDQ, VSS, VREFPower and reference suppliesVDD = 1.7–1.9 V core supply; VDDQ = 1.4–1.8 V I/O supply; VREF = VDDQ/2 ±100 mV for HSTL input threshold setting.
TCK, TMS, TDI, TDOJTAG 1149.1 interfaceSupports boundary scan testing and debug; TCK must be tied to VSS if unused.

Key Features

Feature Design Value
Separate read/write data portsEnables concurrent read and write transactions without bus arbitration, critical for full-duplex packet buffering in switches.
QVLD timing indicatorProvides deterministic, clock-aligned strobe for capturing 4-word bursts - eliminates setup/hold uncertainty in high-speed receivers.
Programmable output impedanceZQ-based calibration ensures matched drive strength to PCB trace impedance (e.g., 50 Ω differential), reducing reflections and jitter.
On-die termination (ODT)Dynamic termination on D[35:0] inputs eliminates external resistors and improves signal integrity at 400 MHz DDR rates.
Industrial temperature rangeGuaranteed operation from −40°C to +85°C ambient - validated for base station RF modules and carrier-grade routers.
4-word burst architectureReduces address transition rate by 75%, lowering EMI and simplifying timing closure on dense backplane interfaces.

Applications

Networking Packet Buffer FPGA Co-Processor Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet flows in network processors and traffic managers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for ingress/egress queues with simultaneous read/write access.

Use Value: 3.2 GB/s sustained bandwidth and 2.0-cycle read latency enable zero-drop forwarding at wire speed.

Use Scenario: Off-chip memory extension for Xilinx UltraScale+ or Intel Stratix 10 FPGAs performing real-time signal processing.

IC Role / Device Role / Timing Role: Synchronous burst-access memory mapped to AXI4-Stream or Avalon-MM interfaces via hard IP controller.

Use Value: Separate I/O ports and QVLD simplify timing closure in FPGA-to-SRAM handshaking, reducing design iteration cycles.

Telecom Baseband Processing High-Performance Test Equipment

Use Scenario: Real-time channel estimation and precoding buffer in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for FFT/IFFT result staging and coefficient lookup tables.

Use Value: DLL-synchronized CQ/CQ̅ outputs and clock-stop capability support precise phase-aligned sampling in multi-channel ADC/DAC systems.

Use Scenario: Pattern memory in high-speed digital pattern generators and BERT instruments operating above 3 Gbps.

IC Role / Device Role / Timing Role: Programmable stimulus/response storage with sub-nanosecond timing repeatability across 36-bit parallel vectors.

Use Value: HSTL I/O, ODT, and ZQ calibration ensure clean signal edges and minimal inter-symbol interference at 400 MHz DDR rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2663KV18-400BZXCSame 36-Mbit density, 400 MHz, 2.0-cycle latency, but uses 165-ball FBGA with different pinout (non-pin-compatible); no ODT support.Lacks on-die termination - requires external series termination and careful layout for signal integrity at 400 MHz.Select when legacy Cypress ecosystem compatibility is required and board-level termination is acceptable.
AS7C362000B-200BINLower speed (200 MHz), asynchronous interface, no burst or QVLD; 36-bit × 1M organization, SOJ package.Not suitable for high-speed synchronous systems - lacks clocking architecture, DLL, and burst control logic.Consider only for cost-sensitive, non-real-time applications where bandwidth < 1.6 GB/s is sufficient.

Compared with CY7C2663KV18-400BZXC and AS7C362000B-200BIN, the R1QGA3636CBG-25IB0 uniquely combines 400 MHz QDR II+ performance with integrated ODT, QVLD timing aid, and industrial temperature rating - delivering superior signal integrity and design margin in demanding telecom and test equipment applications.

Availability

R1QGA3636CBG-25IB0 is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor memory, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for R1QGA3636CBG-25IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1QGA3636CBG-25IB0 belongs to Renesas' QDR™ II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory interfacing in networking, telecom, and high-performance computing systems.

FAQ

What is the maximum operating frequency and corresponding cycle time for R1QGA3636CBG-25IB0?

The R1QGA3636CBG-25IB0 is rated for a maximum operating frequency of 400 MHz, corresponding to a minimum cycle time of 2.5 ns. This specification is guaranteed under industrial temperature conditions (−40°C to +85°C) and with VDD = 1.7–1.9 V and VDDQ = 1.4–1.8 V. The device achieves this performance using its dual-edge clocking architecture and integrated DLL.

Does R1QGA3636CBG-25IB0 support on-die termination (ODT), and how is it configured?

Yes, R1QGA3636CBG-25IB0 supports ODT via the dedicated ODT pin and ZQ calibration resistor. When ODT is enabled, termination values track the ZQ resistor (RQ), providing Thevenin-equivalent resistance ranges of 52–105 Ω (low range) or 105–150 Ω (high range). Configuration is controlled by the logic level on the ODT pin per the datasheet's ODT range table.

What is the function of the QVLD pin on R1QGA3636CBG-25IB0, and how is it timed?

The QVLD pin on R1QGA3636CBG-25IB0 is a valid data indicator that signals when read output data (Q[35:0]) is stable and ready for capture. It is edge-aligned with CQ and CQ̅, asserted half a cycle before the first data word and deasserted half a cycle before the last - providing precise timing margins for high-speed receivers without requiring additional strobes.

What package type and dimensions does R1QGA3636CBG-25IB0 use?

R1QGA3636CBG-25IB0 uses a 165-ball plastic FBGA package measuring 15 mm × 17 mm × 1.4 mm with 0.8 mm ball pitch. The package marking "BG" confirms this variant, and it is Pb-free and supplied in tray format per the ordering code suffix "B".

How does the burst length and read latency of R1QGA3636CBG-25IB0 affect system timing design?

R1QGA3636CBG-25IB0 uses a fixed 4-word burst length and 2.0-cycle read latency. This means a read command issued on clock edge N produces valid data starting at edge N+2, with four consecutive words delivered over two clock cycles. System timing must allocate setup/hold margins around K/K̅ edges and align receiver sampling to QVLD/CQ edges to capture all four words reliably.

R1QGA3636CBG-25IB0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1QGA3636CBG-25IB0 FAQ

1.How can I place an order for R1QGA3636CBG-25IB0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1QGA3636CBG-25IB0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1QGA3636CBG-25IB0 reliable?

The price and inventory of R1QGA3636CBG-25IB0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1QGA3636CBG-25IB0 is usually 5 days.

3.What payment methods are accepted for R1QGA3636CBG-25IB0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1QGA3636CBG-25IB0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1QGA3636CBG-25IB0?

R1QGA3636CBG-25IB0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1QGA3636CBG-25IB0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1QGA3636CBG-25IB0?

For technical support, including R1QGA3636CBG-25IB0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1QGA3636CBG-25IB0 requirements.

6.How does Aetrix verify that R1QGA3636CBG-25IB0 is sourced from the original manufacturer or authorized distributors?

All R1QGA3636CBG-25IB0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1QGA3636CBG-25IB0 meets industry standards.

7.What is the process for return or replacement of R1QGA3636CBG-25IB0?

All R1QGA3636CBG-25IB0 units undergo pre-shipment inspection (PSI). If there is an issue with R1QGA3636CBG-25IB0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1QGA3636CBG-25IB0 part is unused and in its original packaging.

Return procedure for R1QGA3636CBG-25IB0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1QGA3636CBG-25IB0 Tags

  • R1QGA3636CBG-25IB0
  • R1QGA3636CBG-25IB0 PDF
  • R1QGA3636CBG-25IB0 Datasheet
  • R1QGA3636CBG-25IB0 Specifications
  • R1QGA3636CBG-25IB0 Images
  • Renesas
  • Renesas R1QGA3636CBG-25IB0
  • Buy R1QGA3636CBG-25IB0
  • R1QGA3636CBG-25IB0 Price
  • R1QGA3636CBG-25IB0 Distributor
  • R1QGA3636CBG-25IB0 Supplier
  • R1QGA3636CBG-25IB0 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER