Renesas R1QHA3618CBG-25IB0

Overview

R1QHA3618CBG-25IB0 from Renesas Electronics is a 36-Mbit DDR II+ synchronous SRAM with 2,097,152-word × 18-bit organization, 2.0-cycle read latency, HSTL I/O interface, and 165-ball FBGA (15 × 17 mm) package. It operates at up to 400 MHz (2.5 ns cycle time), supports burst-of-two transfers, and delivers precise timing via dual input clocks (K and /K) and echo output clocks (CQ and /CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the R1QHA3618CBG-25IB0 datasheet, R1QHA3618CBG-25IB0 pinout, R1QHA3618CBG-25IB0 application, or R1QHA3618CBG-25IB0 equivalent, this page provides verified specifications including DDR II+ burst timing, on-die termination (ODT) control, programmable output impedance via ZQ, QVLD valid-data indicator, and full JTAG 1149.1 test access - all critical for high-frequency memory subsystem design and signal integrity validation.

Technical Context

This device implements a synchronous double-data-rate architecture with K and /K as sole input clock pair (no C/C pins), latching all address/control on K's rising edge and data on both K and /K rising edges. Its internal DLL/PLL enables wide data-valid window and frequency scalability up to 400 MHz while maintaining tight skew between CQ, /CQ, and DQ outputs.

The R1QHA3618CBG-25IB0 uses common I/O bus architecture with HSTL-compliant drivers, supports ODT activation during input cycles only, and features QVLD synchronized to CQ edges to indicate valid output data windows - eliminating external strobe generation in high-speed interfaces like packet switches and FPGA-based accelerators.

Key Specifications

Pinout & Package

165-ball plastic FBGA package (15 mm × 17 mm × 1.4 mm), RoHS-compliant, with 0.8 mm ball pitch. Ball grid organized in 11 rows (A–K) and 15 columns (1–15), including dedicated power/ground banks for VDD, VDDQ, and VSS, plus HSTL I/Os with VREF reference.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with R1QLA3618CBG-25IB0, the R1QHA3618CBG-25IB0 adds QVLD and ODT for simplified high-speed design; versus CY7C2665KV18-400BZC, it offers single-ended clocking and identical FBGA footprint but lacks QDR's dual-port advantage - making it optimal for cost-constrained, single-port DDR II+ applications.

Availability

R1QHA3618CBG-25IB0 is available at Aetrix Electronics and suitable for packet switching buffers, network processor caches, and FPGA-based accelerator memory requiring stable component supply, industrial temperature operation (-40°C to +85°C), and long-term lifecycle support.

Supply support for R1QHA3618CBG-25IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The R1QHA3618CBG-25IB0 belongs to Renesas' DDR II+ SRAM product line, engineered specifically for high-throughput, low-latency data buffering in networking infrastructure where deterministic timing and signal integrity are critical.

FAQ

What is the maximum operating frequency of the R1QHA3618CBG-25IB0?

The R1QHA3618CBG-25IB0 supports a maximum clock frequency of 400 MHz, corresponding to a minimum cycle time of 2.5 ns. This enables an effective data transfer rate of 800 MT/s in burst-of-two DDR mode. Operation at this speed requires compliance with specified setup/hold times for K, /K, and all control signals, and proper board-level termination matching.

Does the R1QHA3618CBG-25IB0 support on-die termination (ODT)?

Yes, the R1QHA3618CBG-25IB0 supports ODT via the ODT pin. When asserted high, it enables high-range Thevenin termination (105–150 Ω); when low or floating, it selects low-range (52–105 Ω) or disables ODT. ODT activates automatically during input cycles only, minimizing power impact during output phases - a key feature confirmed in the R1QHA36**CB* datasheet revision 0.09a.

What is the function of the QVLD pin on the R1QHA3618CBG-25IB0?

The QVLD (Q Valid) pin on the R1QHA3618CBG-25IB0 indicates the duration of valid output data on the DQ bus. It asserts half a cycle before the first read data and deasserts half a cycle before the last, aligning precisely with CQ and /CQ edges. This eliminates the need for external strobes in high-speed receivers - a defining feature of the DDR II+ variant, explicitly documented for R1QHA36xx devices.

Is the R1QHA3618CBG-25IB0 compatible with JTAG boundary-scan testing?

Yes, the R1QHA3618CBG-25IB0 integrates full IEEE 1149.1 JTAG test access port with TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O levels. These pins support boundary-scan testing, device identification, and in-circuit debugging - confirmed in the Pin Descriptions section (Page 6) and Block Diagram (Page 8) of the official datasheet.

What package type and dimensions does the R1QHA3618CBG-25IB0 use?

The R1QHA3618CBG-25IB0 uses a 165-ball fine-pitch ball grid array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm with 0.8 mm ball pitch. This package is RoHS-compliant and matches the mechanical footprint defined in the Renesas R1QHA36**CB* datasheet (Page 1, Description section), ensuring drop-in compatibility with existing DDR II+ SRAM layouts.