Renesas R1QHA3636CBG-25IB0

Overview

R1QHA3636CBG-25IB0 from Renesas Electronics is a 36-Mbit DDR II+ SRAM with 1,048,576-word × 36-bit organization, 2-word burst, 2.0-cycle read latency, HSTL I/O, and 1.8 V core / 1.5 V I/O supply. It features dual echo clocks (CQ and /CQ), QVLD data-valid indicator, and on-die termination (ODT) for high-speed memory subsystems in network packet buffers and baseband processors.

For engineers reviewing the R1QHA3636CBG-25IB0 datasheet, R1QHA3636CBG-25IB0 pinout, R1QHA3636CBG-25IB0 application, or R1QHA3636CBG-25IB0 equivalent, key selection criteria include its 250 MHz max frequency (4 ns cycle time), -25 speed bin, industrial temperature range (-40°C to +85°C), 165-ball FBGA (15 × 17 mm), and ODT-enabled common I/O architecture supporting precise DDR timing at clock rising edges only.

Technical Context

This device implements a synchronous double-data-rate static RAM architecture with pipelined burst operation, using K and /K as sole input clocks (no C/C pins per II+ specification). Its DLL/PLL circuitry locks to K for wide output data valid window and supports future frequency scaling up to 250 MHz.

The R1QHA3636CBG-25IB0 uses a common data I/O bus with programmable output impedance via ZQ pin and supports ODT control via dedicated ODT input. It delivers valid output data aligned to CQ and /CQ edges, with QVLD asserting half-cycle before first read data and deasserting half-cycle before last read data.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT 72T36115L10PFI and Cypress CY7C2663KV18-250BZI, the R1QHA3636CBG-25IB0 delivers full 36-bit width, integrated ODT, and QVLD in a single package-reducing BOM count and PCB area while enabling tighter timing margins in 250 MHz systems.

Availability

R1QHA3636CBG-25IB0 is available at Aetrix Electronics and suitable for network packet buffers, baseband processor caches, and telecom line card memory requiring stable component supply, industrial temperature operation, and high-speed DDR II+ interface compliance.

Supply support for R1QHA3636CBG-25IB0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1QHA3636CBG-25IB0 belongs to Renesas' QDR II+/DDR II+ SRAM product line, engineered for high-bandwidth, low-latency memory subsystems in networking, wireless infrastructure, and real-time control applications where deterministic timing and signal integrity are critical.

FAQ

What is the maximum operating frequency of the R1QHA3636CBG-25IB0?

The R1QHA3636CBG-25IB0 is rated for a maximum frequency of 250 MHz, corresponding to a 4.0 ns minimum clock cycle time. This speed bin (-25) is validated across the full industrial temperature range (-40°C to +85°C) with VDD = 1.8 V ±0.1 V and VDDQ = 1.5 V. Operation above this frequency violates AC timing specifications and may result in data corruption.

Does the R1QHA3636CBG-25IB0 support on-die termination (ODT)?

Yes, the R1QHA3636CBG-25IB0 supports ODT via the dedicated ODT input pin. When asserted high, it selects high-range termination (105–150 Ω Thevenin); when low, it selects low-range (52–105 Ω). ODT is automatically enabled during write cycles and disabled during read cycles on this common I/O device, eliminating external termination resistors.

What is the function of the QVLD pin on the R1QHA3636CBG-25IB0?

The QVLD (Q Valid) pin on the R1QHA3636CBG-25IB0 is an output that indicates valid data on the DQ bus. It asserts half a clock cycle before the first read data appears and deasserts half a cycle before the last read data - edge-aligned with CQ and /CQ. This eliminates the need for external strobe generation in high-speed receivers.

What package type and dimensions does the R1QHA3636CBG-25IB0 use?

The R1QHA3636CBG-25IB0 uses a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm with 0.8 mm ball pitch. The "G" suffix in the part number confirms the 15 × 17 mm footprint, and the "I" in "-25IB0" denotes industrial temperature grade (-40°C to +85°C).

How is output impedance calibrated on the R1QHA3636CBG-25IB0?

Output impedance is calibrated via the ZQ pin, which must be connected to ground through a precision resistor (RQ). The DQ and CQ driver impedance is set to 0.2 × RQ; for nominal 50 Ω trace matching, RQ = 250 Ω (±20% tolerance). Total ZQ net capacitance must remain below 7.5 pF to maintain calibration accuracy across PVT corners.