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Renesas R1RP0408DGE-2LR#B0
- Part No.:
- R1RP0408DGE-2LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0408DGE-2LR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,388
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Product details
Overview
R1RP0408DGE-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating from a single 5.0 V ±10% supply, with 12 ns maximum access time and 130 mA max operating current. It serves as cache or buffer memory in embedded systems requiring wide-bit-width, low-latency volatile storage.
For engineers reviewing the R1RP0408DGE-2LR#B0 datasheet, R1RP0408DGE-2LR#B0 pinout, R1RP0408DGE-2LR#B0 application, or R1RP0408DGE-2LR#B0 equivalent, key selection criteria include TTL-compatible I/O, center VCC/VSS pinout, SOJ-36 package, data retention at 2 V, and standby current of 5 mA (L-version).
Technical Context
This SRAM uses a 6-transistor memory cell architecture and high-speed circuit design to achieve deterministic static operation-no clocks or refresh required. Its control logic supports independent chip select (CS#), output enable (OE#), and write enable (WE#) with fully static timing, enabling direct interface to legacy microprocessor buses.
The device implements equal access and cycle times (12 ns), supports both CS#- and WE#-controlled write cycles, and features dual standby modes: TTL-level (40 mA) and CMOS-level (5 mA) with guaranteed data retention down to 2.0 V on VCC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512 kwords × 8 bits) - provides byte-wide data path for 8-bit microcontrollers and peripheral buffers |
| Access time | 12 ns (max) - enables compatibility with 80 MHz bus timing without wait states |
| Supply voltage | 5.0 V ±10% - matches standard TTL/CMOS logic rails; no external regulation needed |
| Operating current | 130 mA (max) - defines power budget for active memory subsystems in industrial controllers |
| Standby current | 5 mA (max, L-version) - supports low-power hold mode during processor sleep or idle cycles |
| Data retention voltage | 2.0 V (min, L-version) - allows memory state preservation during brown-out or controlled power-down sequences |
| Input/output compatibility | TTL-compatible - ensures direct connection to 5 V microprocessor address/data/control buses without level shifters |
Pinout & Package
Packaged in a 400-mil 36-pin plastic SOJ (36P0K), the R1RP0408DGE-2LR#B0 uses center VCC/VSS pinout for improved noise immunity and thermal distribution across the die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; LSB-to-MSB mapping per JEDEC SOJ layout |
| I/O1–I/O8 | Data input/output | Bi-directional 8-bit data bus with TTL-compatible drive strength (VOL ≤ 0.4 V @ 8 mA, VOH ≥ 2.4 V @ −4 mA) |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address or control transitions |
| OE# | Output enable | Active-low signal gating output drivers; high-Z when deasserted, allowing bus sharing |
| WE# | Write enable | Active-low control determining read vs. write cycle; sampled with CS# to define write overlap window |
| VCC / VSS | Power / Ground | Center-placed dual VCC (pins 9, 28) and dual VSS (pins 10, 27) reduce IR drop and ground bounce |
| NC | No connection | Pins 19 and 36 are unconnected; must remain floating per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-rail regulators or charge pumps in legacy 5 V system designs |
| Equal access and cycle times | Removes timing margin uncertainty between successive reads/writes-simplifies bus controller design |
| CMOS standby current (5 mA) | Enables energy-efficient suspend modes in portable or battery-backed instrumentation |
| 2 V data retention threshold | Permits graceful degradation handling during undervoltage events without data loss |
| Center VCC/VSS pinout | Reduces simultaneous switching noise and improves signal integrity on dense PCB layouts |
Applications
| Industrial PLC Memory Buffer | Legacy Microcontroller Cache |
|---|---|
Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers where deterministic latency is critical. IC Role / Device Role / Timing Role: High-speed buffer between CPU and field I/O modules, absorbing burst data transfers with sub-12 ns response. Use Value: Eliminates wait states on 8/16-bit bus interfaces, sustaining >8 MB/s sustained throughput under continuous polling. | Use Scenario: Instruction/data caching for Z80, 8086, or 68000-based embedded controllers in test equipment and avionics support units. IC Role / Device Role / Timing Role: Volatile code/data store interfacing directly to microprocessor address/data/control buses via CS#/OE#/WE#. Use Value: Enables zero-wait-state operation at 80 MHz bus clock, improving effective instruction throughput by 22% over slower SRAM alternatives. |
| Communications Protocol Stack Buffer | Medical Imaging Data Pipeline |
Use Scenario: Frame buffering in UART-to-Ethernet bridge modules handling Modbus TCP and serial protocol translation. IC Role / Device Role / Timing Role: Dual-port accessible buffer staging packets between asynchronous serial and synchronous MAC layers. Use Value: Supports concurrent read/write operations with 12 ns access, preventing packet loss at 115.2 kbps serial + 10 Mbps Ethernet aggregate rates. | Use Scenario: Real-time pixel data buffering in ultrasound front-end processors prior to FPGA-based beamforming. IC Role / Device Role / Timing Role: Low-latency scratchpad memory holding digitized ADC samples during time-critical processing windows. Use Value: Guarantees sub-15 ns data availability for pipeline stages, meeting 20 MHz sampling clock timing closure requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV5128AL-12MLI | 3.3 V supply only; 12 ns access; SOJ-36; 5 mA standby; no 2 V retention spec | Requires level-shifting in 5 V systems; unsuitable for brown-out retention use cases | Select only if migrating to 3.3 V architecture and retaining SOJ footprint |
| CY62157EV30LL-12ZSXI | 5 V supply; 12 ns access; TSOP-II-44; 25 mA standby; 2 V retention not specified | Different package (TSOP-II) requires PCB redesign; higher standby current impacts battery life | Choose when board space constraints favor TSOP and retention voltage is not required |
Compared with IS61LV5128AL-12MLI and CY62157EV30LL-12ZSXI, the R1RP0408DGE-2LR#B0 uniquely delivers 5 V operation, SOJ-36 compatibility, and guaranteed 2 V data retention-making it the sole option for legacy 5 V systems needing robust low-voltage hold functionality without layout change.
Availability
R1RP0408DGE-2LR#B0 is available at Aetrix Electronics and suitable for industrial PLCs, legacy microcontroller-based test equipment, and medical imaging subsystems requiring stable component supply across extended production lifecycles.
Supply support for R1RP0408DGE-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0408D Series was designed specifically for high-speed, pin-compatible replacement of aging 5 V SRAMs in industrial control and communications equipment requiring long-term supply stability and proven reliability.
FAQ
What is the maximum operating temperature range for the R1RP0408DGE-2LR#B0?
The R1RP0408DGE-2LR#B0 is rated for operation from 0 °C to +70 °C, per its Recommended Operating Conditions table. This commercial-grade temperature range aligns with Renesas' "Standard" quality classification, making it suitable for office equipment, industrial robots, and communications gear-not automotive or safety-critical systems.
Does the R1RP0408DGE-2LR#B0 support true static operation without clocks or refresh cycles?
Yes, the R1RP0408DGE-2LR#B0 is a fully static RAM: it requires no clocks, no refresh signals, and maintains data indefinitely as long as VCC remains within specification and CS# is held high during standby. Its internal 6-transistor cell design guarantees deterministic behavior under all valid DC and AC conditions defined in the datasheet.
What does the "L-version" designation mean for R1RP0408DGE-2LR#B0, and which parameters depend on it?
The "L-version" in R1RP0408DGE-2LR#B0 refers to Renesas' low-power variant, confirmed by datasheet notes specifying 5 mA standby current, 1.0 mA max CMOS standby, 0.5 mA max data retention current, and 2.0 V min data retention voltage-all guaranteed only for L-version devices like this one.
Can the R1RP0408DGE-2LR#B0 be used with a 3.3 V microprocessor bus?
No-the R1RP0408DGE-2LR#B0 is strictly a 5 V device: its VIH minimum is 2.2 V, but VCC must be 4.5–5.5 V, and outputs are TTL-compatible (VOH ≥ 2.4 V @ −4 mA). Interfacing directly to 3.3 V logic risks overvoltage damage and violates Absolute Maximum Ratings; level translation is mandatory.
Is the R1RP0408DGE-2LR#B0 RoHS compliant?
Yes-Renesas confirms RoHS compliance for the R1RP0408DGE-2LR#B0 per EU Directive 2011/65/EU, as stated in environmental documentation referenced on renesas.com. The part uses lead-free terminations and complies with all restricted substance limits, including Cd, Pb, Hg, Cr⁶⁺, PBB, and PBDE.
R1RP0408DGE-2LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RP0408DGE-2LR#B0 FAQ
1.How can I place an order for R1RP0408DGE-2LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0408DGE-2LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0408DGE-2LR#B0 reliable?
The price and inventory of R1RP0408DGE-2LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0408DGE-2LR#B0 is usually 5 days.
3.What payment methods are accepted for R1RP0408DGE-2LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0408DGE-2LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0408DGE-2LR#B0?
R1RP0408DGE-2LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0408DGE-2LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0408DGE-2LR#B0?
For technical support, including R1RP0408DGE-2LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0408DGE-2LR#B0 requirements.
6.How does Aetrix verify that R1RP0408DGE-2LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RP0408DGE-2LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0408DGE-2LR#B0 meets industry standards.
7.What is the process for return or replacement of R1RP0408DGE-2LR#B0?
All R1RP0408DGE-2LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0408DGE-2LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0408DGE-2LR#B0 part is unused and in its original packaging.
Return procedure for R1RP0408DGE-2LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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