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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1RP0408DGE-2LR#B1

Name: R1RP0408DGE-2LR#B1
Brand: Renesas
SKU: R1RP0408DGE-2LR#B1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1RP0408DGE-2LR#B1

Manufacturer:: Renesas

Category:: Memory

Package:: 36-BSOJ (0.400", 10.16mm Width)

Datasheet:: R1RP0408DGE-2LR#B1.pdf

Description:: IC SRAM 4MBIT PARALLEL 36SOJ

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Product details

Overview

R1RP0408DGE-2LR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, featuring 12 ns max access time, single 5.0 V ±10% supply, and L-version low-power standby current of 1.0 mA (max). It serves as cache or buffer memory in embedded computing and real-time control systems requiring deterministic timing and wide data bus width.

For engineers reviewing the R1RP0408DGE-2LR#B1 datasheet, R1RP0408DGE-2LR#B1 pinout, R1RP0408DGE-2LR#B1 application, or R1RP0408DGE-2LR#B1 equivalent, key selection criteria include verified 12 ns read/write cycle time, TTL-compatible I/O levels, center V_CC/V_SS pinout, and L-version data retention down to 2.0 V with 0.5 mA max current.

Technical Context

The R1RP0408DGE-2LR#B1 implements a fully static 6-transistor SRAM cell architecture with no clock or refresh required. Its operation relies on three active-low control signals-CS#, OE#, and WE#-to manage read, write, and high-impedance output states without external timing strobes.

It supports equal access and cycle times (t_RC = t_WC = 12 ns), direct TTL compatibility on all I/Os, and dual standby modes: 40 mA (TTL) and 1.0 mA (CMOS L-version), with guaranteed data retention at V_CC ≥ 2.0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4 Mbit (512-kword × 8-bit) - provides byte-wide data path for 8-bit microcontrollers and peripheral buffers
Access time	12 ns (max) - enables synchronous interface with 83 MHz CPU buses without wait states
Supply voltage	5.0 V ±10% - compatible with legacy 5 V logic rails and industrial power domains
Standby current (L-version)	1.0 mA (max) - reduces system-level quiescent power in battery-backed or low-duty-cycle applications
Data retention voltage	2.0 V (min) - maintains stored contents during brown-out or controlled power-down sequences
Operating temperature	0 °C to +70 °C - qualified for commercial and industrial ambient environments
Output drive	V_OL ≤ 0.4 V @ 8 mA, V_OH ≥ 2.4 V @ −4 mA - ensures robust noise margin against TTL loads

Pinout & Package

Package: 400-mil 36-pin plastic SOJ (Small Outline J-lead) with center V_CC/V_SS pin arrangement.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address input	19-bit address bus supporting full 512-kword decoding; no internal multiplexing
I/O1–I/O8	Data input/output	Bidirectional 8-bit data bus with TTL-compatible levels and 8 mA sink capability
CS#	Chip select	Active-low enable controlling device activation; high-Z outputs when asserted high
OE#	Output enable	Active-low control for output drivers; does not affect write operations when CS# is low
WE#	Write enable	Active-low signal initiating write cycles; latches data on falling edge with CS#
V_CC	Power supply	Primary 5 V supply pin; multiple pins distributed for low-impedance decoupling
V_SS	Ground	Reference ground; multiple pins placed for return path integrity and noise reduction
NC	No connection	Unbonded pin; must remain unconnected per design and reliability requirements

Key Features

Feature	Design Value
Fully static operation	No clocks, no refresh cycles, no timing strobes - simplifies timing-critical system designs
L-version low-power retention	1.0 mA max standby current and 2.0 V min retention voltage - extends hold time in power-loss scenarios
TTL-compatible I/O	All inputs and outputs meet TTL voltage thresholds - eliminates level-shifting in mixed-logic systems
Equal access/cycle timing	t_RC = t_WC = 12 ns - enables predictable bus arbitration and deterministic memory bandwidth allocation
Center V_CC/V_SS pinout	Power/ground pins symmetrically placed across package - improves power distribution and reduces simultaneous switching noise

Applications

Industrial PLC Data Buffer	Legacy Embedded Controller Cache
Use Scenario: Storing transient I/O scan data between programmable logic controller scan cycles under real-time constraints. IC Role / Device Role / Timing Role: High-speed, non-refreshing buffer memory interfacing directly with 8-bit microcontroller data bus and address latch. Use Value: 12 ns access ensures zero-wait-state operation with 83 MHz bus clocks, reducing scan cycle jitter and improving deterministic response.	Use Scenario: Acting as instruction/data cache for aging 8-bit MCUs in medical diagnostic equipment where firmware updates are infrequent. IC Role / Device Role / Timing Role: Byte-wide SRAM providing low-latency fetch path for ROM-resident code and runtime variables. Use Value: L-version 1.0 mA standby current minimizes power draw during idle periods without compromising boot-time initialization speed.
Automotive Body Control Module	Test Equipment Pattern Memory
Use Scenario: Holding configuration parameters and sensor calibration tables in body control units operating across automotive temperature range. IC Role / Device Role / Timing Role: Nonvolatile-retention-capable SRAM storing critical settings during ignition-off periods. Use Value: Guaranteed data retention at 2.0 V allows safe storage during battery voltage sag below 5 V, eliminating need for backup capacitors.	Use Scenario: Storing digital stimulus/response patterns in automated test equipment requiring precise, repeatable timing. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clock edges with sub-ns setup/hold margins. Use Value: Equal 12 ns read/write cycle time enables tight loop execution without pipeline stalls or external wait generation.

Industrial PLC Data Buffer

Legacy Embedded Controller Cache

Use Scenario: Storing transient I/O scan data between programmable logic controller scan cycles under real-time constraints.

IC Role / Device Role / Timing Role: High-speed, non-refreshing buffer memory interfacing directly with 8-bit microcontroller data bus and address latch.

Use Value: 12 ns access ensures zero-wait-state operation with 83 MHz bus clocks, reducing scan cycle jitter and improving deterministic response.

Use Scenario: Acting as instruction/data cache for aging 8-bit MCUs in medical diagnostic equipment where firmware updates are infrequent.

IC Role / Device Role / Timing Role: Byte-wide SRAM providing low-latency fetch path for ROM-resident code and runtime variables.

Use Value: L-version 1.0 mA standby current minimizes power draw during idle periods without compromising boot-time initialization speed.

Automotive Body Control Module

Test Equipment Pattern Memory

Use Scenario: Holding configuration parameters and sensor calibration tables in body control units operating across automotive temperature range.

IC Role / Device Role / Timing Role: Nonvolatile-retention-capable SRAM storing critical settings during ignition-off periods.

Use Value: Guaranteed data retention at 2.0 V allows safe storage during battery voltage sag below 5 V, eliminating need for backup capacitors.

Use Scenario: Storing digital stimulus/response patterns in automated test equipment requiring precise, repeatable timing.

IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clock edges with sub-ns setup/hold margins.

Use Value: Equal 12 ns read/write cycle time enables tight loop execution without pipeline stalls or external wait generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV5128AL-12KLI	5 V supply, 12 ns access, 512K × 8-bit, 44-pin TSOP-II - higher pin count, different package footprint	Used in newer PCB layouts with surface-mount density constraints; lacks L-version retention specs	Select when board space permits TSOP-II and retention voltage is not required below 3.0 V
AS6C4008-12ZIN	5 V supply, 12 ns access, 512K × 8-bit, 36-pin SOJ - same pinout but no L-version; ISB = 40 mA only	Suitable for cost-sensitive industrial controls where extended low-V_CC retention is unnecessary	Choose when identical SOJ footprint is needed but data retention below 4.5 V is not required

Compared with IS61LV5128AL-12KLI and AS6C4008-12ZIN, the R1RP0408DGE-2LR#B1 uniquely delivers 1.0 mA standby current and 2.0 V data retention in the 36-pin SOJ form factor-critical for brown-out resilience in legacy-replacement designs.

Availability

R1RP0408DGE-2LR#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy embedded controller caching, and automotive body control module memory applications requiring stable component supply and long-term lifecycle support.

Supply support for R1RP0408DGE-2LR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RP0408D Series was designed specifically for high-speed, low-latency memory applications in resource-constrained embedded systems where deterministic timing, 5 V compatibility, and reliable data retention under voltage stress are essential.

FAQ

What is the maximum access time specification for R1RP0408DGE-2LR#B1?

The R1RP0408DGE-2LR#B1 has a maximum access time of 12 ns, measured as address access time (t_AA) and chip select access time (t_ACS). This value is guaranteed over the full operating temperature range (0 °C to +70 °C) and supply voltage (4.5 V to 5.5 V), enabling zero-wait-state operation with 83 MHz bus interfaces. The R1RP0408DGE-2LR#B1 achieves this using high-speed CMOS circuit design and a 6-transistor memory cell.

Does R1RP0408DGE-2LR#B1 support data retention during low-voltage conditions?

Yes, the R1RP0408DGE-2LR#B1 supports guaranteed data retention at V_CC as low as 2.0 V, with a maximum retention current of 0.5 mA. This L-version feature is validated per the datasheet's Low V_CC Data Retention Characteristics table and applies only to the -2LR variant. The R1RP0408DGE-2LR#B1 maintains stored data during brown-out events without external backup power, unlike standard versions.

What is the pin configuration of R1RP0408DGE-2LR#B1 and how does it differ from standard SOJ layouts?

The R1RP0408DGE-2LR#B1 uses a 36-pin plastic SOJ package with center V_CC/V_SS pinout-power and ground pins are symmetrically distributed near the package center rather than at opposite ends. This layout reduces power delivery impedance and improves noise immunity. The R1RP0408DGE-2LR#B1 pinout includes 19 address lines (A0–A18), 8 bidirectional data lines (I/O1–I/O8), and three control signals (CS#, OE#, WE#), plus NC pins.

Is R1RP0408DGE-2LR#B1 compatible with TTL-level logic interfaces?

Yes, the R1RP0408DGE-2LR#B1 is fully TTL-compatible: all inputs accept VIH ≥ 2.0 V and VIL ≤ 0.8 V, and outputs drive VOH ≥ 2.4 V at −4 mA and VOL ≤ 0.4 V at 8 mA. This allows direct connection to legacy 5 V TTL microcontrollers and FPGAs without level shifters. The R1RP0408DGE-2LR#B1 maintains this compatibility across its full operating temperature and voltage range.

What are the standby current specifications for R1RP0408DGE-2LR#B1?

The R1RP0408DGE-2LR#B1 offers two standby current modes: TTL standby current (ISB) is 40 mA max, while CMOS standby current (ISB1) is 1.0 mA max-exclusive to the L-version. ISB1 requires specific bias conditions: V_CC ≥ CS# ≥ V_CC − 0.2 V and VIN held near V_SS or V_CC. This ultra-low 1.0 mA mode makes the R1RP0408DGE-2LR#B1 suitable for power-sensitive applications where memory remains powered but inactive for extended periods.

R1RP0408DGE-2LR#B1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 36-BSOJ (0.400", 10.16mm Width)

Packaging:: Tube

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 12ns

Access Time:: 12 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 36-SOJ

R1RP0408DGE-2LR#B1 FAQ

1.How can I place an order for R1RP0408DGE-2LR#B1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1RP0408DGE-2LR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1RP0408DGE-2LR#B1 reliable?

The price and inventory of R1RP0408DGE-2LR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0408DGE-2LR#B1 is usually 5 days.

3.What payment methods are accepted for R1RP0408DGE-2LR#B1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0408DGE-2LR#B1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1RP0408DGE-2LR#B1?

R1RP0408DGE-2LR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1RP0408DGE-2LR#B1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1RP0408DGE-2LR#B1?

For technical support, including R1RP0408DGE-2LR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0408DGE-2LR#B1 requirements.

6.How does Aetrix verify that R1RP0408DGE-2LR#B1 is sourced from the original manufacturer or authorized distributors?

All R1RP0408DGE-2LR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0408DGE-2LR#B1 meets industry standards.

7.What is the process for return or replacement of R1RP0408DGE-2LR#B1?

All R1RP0408DGE-2LR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0408DGE-2LR#B1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1RP0408DGE-2LR#B1 part is unused and in its original packaging.

Return procedure for R1RP0408DGE-2LR#B1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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