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Renesas R1RP0408DGE-2PR#B0
- Part No.:
- R1RP0408DGE-2PR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0408DGE-2PR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,301
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Product details
Overview
R1RP0408DGE-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating at 5.0 V ±10%, with 12 ns maximum access time, 130 mA max operating current, and packaged in a 400-mil 36-pin plastic SOJ. It serves as cache or buffer memory in high-speed embedded systems requiring wide data bus width and zero-clock static operation.
For engineers reviewing the R1RP0408DGE-2PR#B0 datasheet, R1RP0408DGE-2PR#B0 pinout, R1RP0408DGE-2PR#B0 application, or R1RP0408DGE-2PR#B0 equivalent, key selection criteria include TTL-compatible I/O timing, standby current (5 mA max for L-version), data retention at 2 V, center VCC/VSS pinout, and SOJ-36 mechanical compatibility with legacy SRAM sockets.
Technical Context
This device implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its control logic uses active-low chip select (CS#), output enable (OE#), and write enable (WE#) to manage read/write cycles and high-impedance I/O states.
The internal block includes a 1024-row × 32-column × 16-block × 8-bit array (4,194,304 bits total), column/row decoders, and an internal voltage generator. Timing supports equal access and cycle times, with tAA = tRC = 12 ns (max), tOE = 6 ns (max), and tWP = 8 ns (min).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512 kwords × 8 bits) - supports byte-wide data paths without external multiplexing |
| Access time | 12 ns (max) - enables integration into 83 MHz CPU bus interfaces with setup/hold margin |
| Supply voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5 V system designs |
| Operating current | 130 mA (max) - defines thermal budget for dense memory subsystems at full activity |
| Standby current | 5 mA (max, L-version) - enables low-power hold mode during processor sleep or idle states |
| Data retention voltage | 2.0 V (min, L-version) - allows battery-backed retention during main power loss without external regulators |
| Input capacitance | 6 pF (max) - limits capacitive loading on address/control buses, preserving signal integrity |
Pinout & Package
Packaged in a 400-mil 36-pin plastic SOJ (36P0K) with center VCC/VSS pin arrangement for reduced noise coupling and improved power distribution.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; A0 = LSB, A18 = MSB |
| I/O1–I/O8 | Data input/output | Bidirectional 8-bit data bus with TTL-compatible drive strength (VOL = 0.4 V @ 8 mA) |
| CS# | Chip select | Active-low global enable; must be low for any read/write; high-Z I/O when high |
| OE# | Output enable | Active-low read gate; controls output drivers independently of CS# for bus sharing |
| WE# | Write enable | Active-low write strobe; latches data on falling edge when CS# is asserted |
| VCC / VSS | Power / Ground | Center-placed dual VCC (pins 9 & 28) and dual VSS (pins 10 & 27) reduce IR drop and ground bounce |
| NC | No connection | Pins 19 and 36 are unconnected; must remain floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-rail power design, simplifying PCB layout and BOM for industrial control systems |
| Equal access and cycle times | Enables deterministic bus timing without separate read/write cycle calculations in synchronous controllers |
| TTL-compatible I/O | Direct interface with 74LS/74HC logic families without level-shifting components |
| Low standby current (L-version) | Supports battery-backed data retention in portable instrumentation with <5 mA quiescent draw |
| Center VCC/VSS pinout | Reduces simultaneous switching noise (SSN) and improves signal integrity on high-density memory modules |
Applications
| Industrial PLC Memory Buffer | Legacy Network Router Cache |
|---|---|
Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers requiring deterministic memory access. IC Role / Device Role / Timing Role: High-speed static RAM serving as instruction/data cache between microcontroller and fieldbus interface ASIC. Use Value: 12 ns access time ensures sub-microsecond response to sensor interrupts; 512-kword depth accommodates multi-task firmware overlays. | Use Scenario: Packet buffering in early-generation Ethernet switches and routing engines with parallel bus architectures. IC Role / Device Role / Timing Role: Shared-memory packet buffer enabling concurrent ingress/egress DMA transfers via 8-bit data path. Use Value: TTL-compatible I/O and 130 mA operating current match legacy ASIC timing budgets; SOJ-36 footprint allows drop-in replacement in field-upgraded units. |
| Medical Imaging Data FIFO | Avionics Display Frame Buffer |
Use Scenario: Temporary storage of digitized X-ray or ultrasound scan lines before compression and transmission. IC Role / Device Role / Timing Role: Burst-mode write buffer accepting parallel ADC output, then sequential read for JPEG encoder interface. Use Value: Fully static operation eliminates refresh overhead; 2 V data retention supports safe shutdown during power fault events. | Use Scenario: Non-volatile frame buffer for cockpit display units in certified avionics platforms using discrete graphics controllers. IC Role / Device Role / Timing Role: Dual-port accessible memory (via CS#/OE# arbitration) holding rendered GUI layers for real-time overlay rendering. Use Value: Center VCC/VSS layout minimizes EMI in safety-critical RF environments; 40 mA TTL standby current meets DO-254 power constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV5128AL-12TLI | 3.3 V supply, 12 ns access, 44-pin TSOP-II vs. 36-pin SOJ; lower operating current (80 mA) | Targets newer 3.3 V systems; incompatible pinout and voltage domain requires redesign | Select only if migrating to 3.3 V infrastructure and board re-spin is acceptable |
| AS6C4008-12ZIN | 5 V supply, 12 ns access, 32-pin SOJ; 4 Mbit density but 1024-kword × 4-bit organization | Narrower 4-bit bus requires two devices for byte-wide interface; same SOJ footprint but different pin mapping | Use only when 4-bit data path is acceptable or dual-device parallel configuration is feasible |
Compared with R1RP0408DGE-2PR#B0, IS61LV5128AL-12TLI offers lower power but mandates voltage and package change, while AS6C4008-12ZIN retains 5 V operation but splits the 8-bit interface across two packages-neither provides pin-compatible replacement without hardware modification.
Availability
R1RP0408DGE-2PR#B0 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy network router caches, medical imaging data FIFOs, avionics display frame buffers, and test equipment buffer memory requiring stable component supply over extended product lifecycles.
Supply support for R1RP0408DGE-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial and automotive markets.
The R1RP0408D Series was designed as a high-speed, TTL-compatible SRAM family targeting legacy 5 V embedded systems where pin compatibility, static operation, and robust SOJ packaging are critical for long-lifecycle industrial and communications equipment.
FAQ
What is the maximum operating temperature range for the R1RP0408DGE-2PR#B0?
The R1RP0408DGE-2PR#B0 is rated for operation from 0°C to +70°C, as specified in its Absolute Maximum Ratings table. This commercial-grade temperature range aligns with Renesas' "Standard" quality classification, making it suitable for office equipment, communications gear, and industrial automation systems-not for automotive, aerospace, or life-support applications without explicit qualification.
Does the R1RP0408DGE-2PR#B0 support data retention during power loss?
Yes, the R1RP0408DGE-2PR#B0 (L-version) guarantees data retention down to 2.0 V VCC with ≤500 µA current draw, provided CS# remains within VCC − 0.2 V and input voltages stay within defined thresholds. This feature enables battery-backed hold modes in instrumentation and telecom systems where volatile memory state must persist during brownout conditions.
Is the R1RP0408DGE-2PR#B0 pin-compatible with other members of the R1RP0408D Series?
Yes, all R1RP0408D Series variants-including R1RP0408DGE-0PR (10 ns), R1RP0408DGE-2PR#B0 (12 ns), and R1RP0408DGE-2LR-share identical 36-pin SOJ packaging, pinout, and DC/AC timing structure. Only access time and corresponding AC parameter limits differ; no PCB changes are needed when substituting within the same speed grade.
What is the significance of the "center VCC and VSS type pin out" in the R1RP0408DGE-2PR#B0 datasheet?
The center VCC and VSS pinout places power and ground pins symmetrically near the middle of the 36-pin SOJ package (pins 9, 10, 27, 28), reducing power delivery impedance and minimizing ground bounce during high-speed I/O transitions. This layout enhances signal integrity in noise-sensitive applications like medical imaging and avionics displays where EMI compliance is critical.
Can the R1RP0408DGE-2PR#B0 be used in new designs, or is it obsolete?
The R1RP0408DGE-2PR#B0 remains actively supported by Renesas Electronics for legacy system maintenance and long-lifecycle industrial deployments. While not recommended for greenfield 3.3 V or low-power designs, Aetrix Electronics maintains stable inventory and supply chain continuity for this part, including traceable sourcing and lifecycle coordination for production programs requiring 10+ year component availability.
R1RP0408DGE-2PR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RP0408DGE-2PR#B0 FAQ
1.How can I place an order for R1RP0408DGE-2PR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0408DGE-2PR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0408DGE-2PR#B0 reliable?
The price and inventory of R1RP0408DGE-2PR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0408DGE-2PR#B0 is usually 5 days.
3.What payment methods are accepted for R1RP0408DGE-2PR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0408DGE-2PR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0408DGE-2PR#B0?
R1RP0408DGE-2PR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0408DGE-2PR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0408DGE-2PR#B0?
For technical support, including R1RP0408DGE-2PR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0408DGE-2PR#B0 requirements.
6.How does Aetrix verify that R1RP0408DGE-2PR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RP0408DGE-2PR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0408DGE-2PR#B0 meets industry standards.
7.What is the process for return or replacement of R1RP0408DGE-2PR#B0?
All R1RP0408DGE-2PR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0408DGE-2PR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0408DGE-2PR#B0 part is unused and in its original packaging.
Return procedure for R1RP0408DGE-2PR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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