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Renesas R1RP0408DGE-2PR#B1
- Part No.:
- R1RP0408DGE-2PR#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0408DGE-2PR#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,584
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Product details
Overview
R1RP0408DGE-2PR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, featuring 12 ns max access time, single 5.0 V ±10% supply, and TTL-compatible I/O. It serves as cache or buffer memory in real-time embedded systems requiring deterministic timing and wide data bus width.
For engineers reviewing the R1RP0408DGE-2PR#B1 datasheet, R1RP0408DGE-2PR#B1 pinout, R1RP0408DGE-2PR#B1 application, or R1RP0408DGE-2PR#B1 equivalent, key selection criteria include access/cycle time matching, SOJ-36 package compatibility, standby current budget (40 mA max), and direct TTL interface support without level shifting.
Technical Context
This SRAM uses a 6-transistor memory cell architecture and fully static design-no clocks, strobes, or refresh required. Its operation relies on three active-low control signals (CS#, OE#, WE#) to manage read/write cycles with equal tRC and tWC of 12 ns, enabling predictable timing in synchronous bus environments.
The device implements center-VCC/VSS pinout for reduced noise coupling and supports two standby modes: TTL-level ISB (≤40 mA) and CMOS-level ISB1 (≤5 mA), with data retention down to 2.0 V (L-version only). Pin functions are strictly address/data/control mapped-no multiplexing or mode pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (512 kwords × 8 bits) - supports byte-wide data paths without external demultiplexing |
| Access time | 12 ns max - enables ≤83.3 MHz bus operation with zero wait states in compatible controllers |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS logic families without regulation overhead |
| Operating current | 130 mA max - defines peak power draw during active read/write bursts |
| Standby current | 40 mA max (TTL), 5 mA max (CMOS) - determines quiescent power in low-activity system states |
| I/O compatibility | Direct TTL - eliminates need for level translators when interfacing with 5 V microcontrollers or FPGAs |
| Pin count & type | 36-pin plastic SOJ - surface-mount package with gull-wing leads for automated assembly |
Pinout & Package
Package: 400-mil 36-pin plastic SOJ (Small Outline J-Lead), center-power/ground configuration (VCC and VSS at pins 19 and 20).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; no address multiplexing |
| I/O1–I/O8 | Data input/output | Bi-directional 8-bit data bus with TTL-compatible drive strength (VOH ≥2.4 V @ −4 mA, VOL ≤0.4 V @ 8 mA) |
| CS# | Chip select | Active-low enable controlling device participation in bus cycles; asserts internal timing upon low transition |
| OE# | Output enable | Active-low signal gating output drivers; allows read data to appear only when CS# and OE# are both low |
| WE# | Write enable | Active-low signal initiating write operations; latches data on I/O pins when CS# and WE# are simultaneously low |
| VCC | Power supply | Primary 5 V supply; all VCC pins must be tied to same potential per datasheet DC condition |
| VSS | Ground | Reference ground; all VSS pins must be tied to same potential |
| NC | No connection | Unbonded pin; must remain unconnected and unpopulated on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, timing strobe, or refresh circuitry required-simplifies controller interface and reduces system timing complexity |
| Equal access and cycle times | tAA = tRC = 12 ns max-enables deterministic bus arbitration and eliminates variable latency in burst transfers |
| Center VCC/VSS pinout | VCC (pin 19) and VSS (pin 20) placed centrally-minimizes simultaneous switching noise across the data bus |
| TTL-compatible I/O | All inputs accept 0.8 V/2.0 V thresholds; outputs drive standard TTL loads-eliminates level-shifting components |
| Two standby current modes | ISB (40 mA) for fast wake-up; ISB1 (5 mA) for ultra-low-power hold-supports dual-mode power management strategies |
Applications
| Industrial PLC Data Buffer | Automotive Engine Control Unit Cache |
|---|---|
Use Scenario: High-speed temporary storage for sensor fusion results and actuator command queues in programmable logic controllers. IC Role / Device Role / Timing Role: Byte-wide SRAM acting as deterministic latency buffer between ARM Cortex-M7 core and fieldbus interface ASIC. Use Value: 12 ns access ensures sub-100 ns response to interrupt-driven I/O events without DMA stalls. | Use Scenario: Real-time instruction and lookup table storage for fuel injection timing calculations in engine control modules. IC Role / Device Role / Timing Role: Non-refreshed cache holding calibrated maps and PID coefficients accessed by 32-bit RISC processor. Use Value: Fully static operation guarantees data integrity during voltage transients common in 12 V automotive electrical systems. |
| Medical Imaging Frame Buffer | Test Equipment Pattern Memory |
Use Scenario: Intermediate frame storage in portable ultrasound devices where image data streams from ADC at 40 MSPS. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used in ping-pong configuration for seamless capture/display buffering. Use Value: 8-bit parallel I/O and 12 ns timing align with FPGA-based pixel pipeline clock domains without glue logic. | Use Scenario: Storage of digital stimulus/response patterns in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access memory referenced by high-speed pattern generator state machine. Use Value: Equal tRC/tWC simplifies sequencer design and enables repeatable 83.3 MHz pattern update rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-12PIN | Same density (4 Mbit), 12 ns access, but 32-pin SOP package; higher ISB (60 mA) | Lacks center VCC/VSS layout; less noise-immune in dense layouts | Preferred for cost-sensitive designs where SOJ reflow is unavailable |
| IS61LV5128-12KLI | 5 V tolerant but designed for 3.3 V operation; lower ICC (80 mA), 32-pin TSOP | Requires level translation for pure 5 V systems; not drop-in compatible | Selected when migrating toward lower power and mixed-voltage architectures |
Compared with AS6C4008-12PIN and IS61LV5128-12KLI, the R1RP0408DGE-2PR#B1 offers superior noise immunity via center VCC/VSS, guaranteed 5 V-only operation without translation, and tighter ISB1 standby spec-making it optimal for legacy 5 V industrial control and automotive ECU designs demanding deterministic timing.
Availability
R1RP0408DGE-2PR#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive engine control unit cache, and medical imaging frame buffering requiring stable component supply over extended production lifecycles.
Supply support for R1RP0408DGE-2PR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0408D Series was developed specifically for high-reliability, high-speed embedded systems requiring deterministic 5 V SRAM performance-targeting cache, buffer, and real-time data logging applications in harsh environments.
FAQ
What is the maximum operating temperature range for R1RP0408DGE-2PR#B1?
The R1RP0408DGE-2PR#B1 is rated for operation from 0°C to +70°C per its Absolute Maximum Ratings and Recommended Operating Conditions. This commercial-grade temperature range is validated for use in industrial control panels, test equipment, and non-under-hood automotive modules where ambient heat is managed externally. The device does not support extended or automotive-grade temperature ranges beyond this specification.
Does R1RP0408DGE-2PR#B1 require an external clock signal?
No, the R1RP0408DGE-2PR#B1 is a fully static RAM and requires no external clock or timing strobe. All operations are controlled solely by the timing relationships among CS#, OE#, and WE# signals. This eliminates clock distribution complexity and jitter sensitivity, making R1RP0408DGE-2PR#B1 ideal for deterministic real-time systems where timing predictability is critical.
What is the pinout configuration of R1RP0408DGE-2PR#B1 and why does it matter?
R1RP0408DGE-2PR#B1 uses a center-VCC/VSS pinout (VCC at pin 19, VSS at pin 20) in its 36-pin SOJ package. This symmetric power/ground placement minimizes simultaneous switching noise across the 8-bit data bus and improves signal integrity in high-speed parallel interfaces. It also simplifies PCB decoupling layout compared to corner-fed packages.
Can R1RP0408DGE-2PR#B1 operate at 3.3 V?
No, R1RP0408DGE-2PR#B1 is specified exclusively for 5.0 V ±10% operation (4.5 V to 5.5 V). Its DC characteristics-including VIH/VIL thresholds, VOH/VOL levels, and ICC-are guaranteed only within this range. Operation below 4.5 V may result in undefined behavior, increased access time, or data retention failure. For 3.3 V systems, consider alternative SRAM families such as IS61LV5128.
What are the data retention capabilities of R1RP0408DGE-2PR#B1?
R1RP0408DGE-2PR#B1 supports data retention at VCC as low as 2.0 V, but this specification applies only to the L-version (e.g., R1RP0408DGE-2LR), not the standard R1RP0408DGE-2PR#B1. The standard version does not guarantee data retention below nominal 5 V operation. Retention current is not characterized for the -2PR variant, and users requiring low-VCC hold must select the L-version explicitly.
R1RP0408DGE-2PR#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RP0408DGE-2PR#B1 FAQ
1.How can I place an order for R1RP0408DGE-2PR#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0408DGE-2PR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0408DGE-2PR#B1 reliable?
The price and inventory of R1RP0408DGE-2PR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0408DGE-2PR#B1 is usually 5 days.
3.What payment methods are accepted for R1RP0408DGE-2PR#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0408DGE-2PR#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0408DGE-2PR#B1?
R1RP0408DGE-2PR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0408DGE-2PR#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0408DGE-2PR#B1?
For technical support, including R1RP0408DGE-2PR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0408DGE-2PR#B1 requirements.
6.How does Aetrix verify that R1RP0408DGE-2PR#B1 is sourced from the original manufacturer or authorized distributors?
All R1RP0408DGE-2PR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0408DGE-2PR#B1 meets industry standards.
7.What is the process for return or replacement of R1RP0408DGE-2PR#B1?
All R1RP0408DGE-2PR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0408DGE-2PR#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0408DGE-2PR#B1 part is unused and in its original packaging.
Return procedure for R1RP0408DGE-2PR#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0408DGE-2PR#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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