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Renesas R1RP0416DGE-2LR#B0
- Part No.:
- R1RP0416DGE-2LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DGE-2LR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,427
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Product details
Overview
R1RP0416DGE-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0 V ±10% supply with 12 ns maximum access time. It features TTL-compatible inputs/outputs, byte-selectable upper/lower data access via UB#/LB#, and center VCC/VSS pinout-designed for cache and buffer memory in high-performance computing and communications systems.
For engineers reviewing the R1RP0416DGE-2LR#B0 datasheet, R1RP0416DGE-2LR#B0 pinout, R1RP0416DGE-2LR#B0 application, or R1RP0416DGE-2LR#B0 equivalent, key selection criteria include its 44-pin plastic SOJ package, 160 mA max operating current, 5 mA max CMOS standby current (L-version), data retention down to 2.0 V, and direct TTL interface compatibility without external level shifting.
Technical Context
This SRAM uses a 6-transistor memory cell architecture and high-speed circuit design to achieve uniform 12 ns access and cycle times. Its fully static operation requires no clocks or refresh cycles, and it supports independent upper-byte (I/O9–I/O16) and lower-byte (I/O1–I/O8) read/write control via dedicated UB# and LB# pins.
The device implements center VCC/VSS power distribution for reduced noise coupling and includes three standby modes: TTL-level (40 mA), CMOS-level (5 mA), and low-voltage data retention (1.0 mA at VCC ≥ 2.0 V). All control signals-CS#, OE#, WE#, UB#, LB#-are active-low and fully compatible with standard TTL logic thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - supports wide-data-path buffering without external data-width expansion |
| Access time | 12 ns (max) - enables integration into sub-83 MHz synchronous bus systems with zero wait states |
| Supply voltage | 5.0 V ±10% - operates directly from standard TTL-regulated rails without auxiliary regulation |
| Standby current | 5 mA (max, CMOS mode) - reduces system power during idle periods in portable or thermally constrained designs |
| Data retention voltage | 2.0 V (min) - maintains stored data during brown-out or controlled power-down sequences |
| I/O voltage compatibility | TTL input/output levels - eliminates need for level translators when interfacing with 74-series or microcontroller GPIO |
| Package | 400-mil 44-pin plastic SOJ (44P0K) - industry-standard footprint compatible with legacy PCB layouts and automated assembly |
Pinout & Package
Package: 44-pin plastic SOJ (400-mil width), JEDEC MS-022AC compliant, center VCC/VSS configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing; A0 = LSB, A17 = MSB |
| I/O1–I/O8 | Lower data I/O | 8-bit bidirectional data path enabled only when LB# = low and CS# = low |
| I/O9–I/O16 | Upper data I/O | 8-bit bidirectional data path enabled only when UB# = low and CS# = low |
| CS# | Chip select | Active-low global enable; places device in standby (high-Z I/O) when high |
| OE# | Output enable | Active-low read control; overrides WE# to force output state during read cycles |
| WE# | Write enable | Active-low write strobe; latches data on I/O pins when CS# and LB#/UB# are asserted |
| UB# / LB# | Byte select | Independent active-low controls for upper/lower 8-bit data lanes; enables partial-word writes |
| VCC / VSS | Power / Ground | Center-placed dual VCC (pins 10, 33) and dual VSS (pins 11, 34) reduce IR drop and switching noise |
| NC | No connection | Pin 23 is unconnected; must be left floating or tied to ground per layout best practices |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-rail regulators or charge pumps in 5 V system designs |
| Equal access and cycle times | Enables deterministic timing analysis and simplifies bus controller design for burst or pipelined transfers |
| Byte-selectable read/write | Reduces bus contention and allows efficient 8-bit peripheral interfacing without software masking overhead |
| Low-power data retention mode | Draws ≤1.0 mA at VCC = 2.0 V, enabling battery-backed operation for nonvolatile state preservation |
| Direct TTL compatibility | Accepts VIH ≥ 2.2 V and VIL ≤ 0.8 V; drives VOH ≥ 2.4 V and VOL ≤ 0.4 V at rated loads |
Applications
| High-Speed Cache Memory | Communications Buffer |
|---|---|
Use Scenario: CPU-side L2 cache in embedded controllers requiring zero-wait-state access to instruction/data streams. IC Role / Device Role / Timing Role: High-bandwidth, low-latency 16-bit parallel memory serving as intermediate storage between processor core and main DRAM. Use Value: 12 ns access time enables full utilization of 83 MHz bus clocks; byte-select capability supports mixed 8/16-bit instruction fetch patterns. |
Use Scenario: Packet buffering in Ethernet switch ASICs handling line-rate 100 Mbps traffic with bursty ingress/egress flows. IC Role / Device Role / Timing Role: Dual-port-capable (via OE#/WE# separation) temporary storage for frame reassembly and header modification. Use Value: 44-pin SOJ footprint fits dense switch fabric layouts; 5 mA standby current minimizes power in idle port queues. |
| Industrial PLC Data Log | Digital Signal Processor Interface |
Use Scenario: Nonvolatile event logging in programmable logic controllers where power loss may occur during runtime. IC Role / Device Role / Timing Role: Battery-backed SRAM holding timestamped I/O state snapshots during mains interruption. Use Value: Guaranteed data retention at VCC ≥ 2.0 V allows use with single-cell LiFePO₄ backup (3.2 V nominal); 1.0 mA retention current extends backup runtime. |
Use Scenario: Co-processor memory for TI C6000 or Analog Devices SHARC DSPs performing real-time FIR filtering on 16-bit audio samples. IC Role / Device Role / Timing Role: External program/data memory mapped into DSP's EMIF with synchronous 16-bit parallel interface. Use Value: Center VCC/VSS pinout suppresses simultaneous switching noise critical for ADC/DAC co-location; TTL compatibility avoids level-shifter BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 3.3 V supply, 12 ns access, 44-pin TSOP-II; lower operating current (90 mA), no data retention mode | Requires level translation in 5 V systems; unsuitable for brown-out retention scenarios | Select when migrating to 3.3 V system architecture and power efficiency outweighs retention needs |
| CY62167EV30LL-45ZSXI | 3.3 V supply, 45 ns access, 48-pin TSOP; higher density (16 Mbit), integrated auto-power-down | Slower timing limits use in high-clock domains; different pinout prevents drop-in replacement | Choose for cost-sensitive, lower-speed buffer applications where density > speed and 3.3 V compliance is mandatory |
Compared with IS61LV25616AL-12TQLI and CY62167EV30LL-45ZSXI, the R1RP0416DGE-2LR#B0 uniquely supports 5 V TTL-native operation with guaranteed 2.0 V data retention-making it irreplaceable in legacy industrial control and military-grade 5 V systems where voltage margin and state persistence are design-critical.
Availability
R1RP0416DGE-2LR#B0 is available at Aetrix Electronics and suitable for high-speed cache memory, communications buffering, industrial data logging, and DSP interface applications requiring stable component supply across extended product lifecycles.
Supply support for R1RP0416DGE-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was developed as a high-speed, 5 V-compatible SRAM family targeting cache and buffer roles in legacy 5 V computing and telecom equipment where pin-compatible upgrade paths and long-term supply stability are essential.
FAQ
What is the maximum operating temperature range for R1RP0416DGE-2LR#B0?
The R1RP0416DGE-2LR#B0 is specified for operation from 0°C to +70°C ambient temperature, consistent with its "Standard" quality grade classification per Renesas documentation. This range covers commercial and industrial environments where airflow and board-level thermal management maintain junction temperatures within safe limits. The R1RP0416DGE-2LR#B0 does not support extended temperature grades such as −40°C to +85°C.
Does R1RP0416DGE-2LR#B0 support true static operation without clocks or refresh cycles?
Yes, the R1RP0416DGE-2LR#B0 is a fully static RAM: it requires no clocks, timers, or periodic refresh signals to retain data. As long as VCC remains within 4.5 V to 5.5 V and CS# is held high during standby, the device holds its contents indefinitely. This behavior is confirmed in the "Completely static memory - No clock or timing strobe required" feature listing and verified in the Operation Table under Standby mode.
Can R1RP0416DGE-2LR#B0 perform simultaneous upper- and lower-byte writes?
No, the R1RP0416DGE-2LR#B0 cannot write to both upper and lower bytes simultaneously. The Operation Table explicitly defines separate "Lower byte write" and "Upper byte write" modes, each requiring the corresponding LB# or UB# signal low while the other remains high. Asserting both LB# and UB# low during a write results in undefined I/O behavior, as noted in footnote 7 of the AC Characteristics section.
What is the meaning of the "L-version" designation in R1RP0416DGE-2LR#B0's datasheet specifications?
The "L-version" refers to a specific variant of the R1RP0416D Series optimized for low-power standby and data retention. Key L-version parameters include 5 mA max CMOS standby current (ISB1), 1.0 mA max data retention current, and guaranteed 2.0 V minimum data retention voltage. These values are explicitly marked "guaranteed only for L-version" in the datasheet and apply directly to R1RP0416DGE-2LR#B0.
Is R1RP0416DGE-2LR#B0 pin-compatible with other members of the R1RP0416D Series?
Yes, all R1RP0416D Series variants-including R1RP0416DGE-2PR, R1RP0416DGE-2LR, R1RP0416DSB-2PR, and R1RP0416DSB-2LR-share identical 44-pin SOJ or TSOPII footprints and pinouts. The suffix differences denote access time (−2 = 12 ns), package type (GE = SOJ, SB = TSOPII), and version (PR vs LR indicating standard vs L-version). The R1RP0416DGE-2LR#B0 uses the same 44P0K SOJ layout as R1RP0416DGE-2PR.
R1RP0416DGE-2LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RP0416DGE-2LR#B0 FAQ
1.How can I place an order for R1RP0416DGE-2LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DGE-2LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DGE-2LR#B0 reliable?
The price and inventory of R1RP0416DGE-2LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DGE-2LR#B0 is usually 5 days.
3.What payment methods are accepted for R1RP0416DGE-2LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DGE-2LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DGE-2LR#B0?
R1RP0416DGE-2LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DGE-2LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DGE-2LR#B0?
For technical support, including R1RP0416DGE-2LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DGE-2LR#B0 requirements.
6.How does Aetrix verify that R1RP0416DGE-2LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DGE-2LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DGE-2LR#B0 meets industry standards.
7.What is the process for return or replacement of R1RP0416DGE-2LR#B0?
All R1RP0416DGE-2LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DGE-2LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DGE-2LR#B0 part is unused and in its original packaging.
Return procedure for R1RP0416DGE-2LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DGE-2LR#B0 Tags
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