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Renesas R1RP0416DGE-2LR#B1
- Part No.:
- R1RP0416DGE-2LR#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DGE-2LR#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,868
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Product details
Overview
R1RP0416DGE-2LR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating at 5.0V ±10%, with 12ns max access time, TTL-compatible I/O, and center VCC/VSS pinout. It serves as cache or buffer memory in high-performance embedded systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RP0416DGE-2LR#B1 datasheet, R1RP0416DGE-2LR#B1 pinout, R1RP0416DGE-2LR#B1 application, or R1RP0416DGE-2LR#B1 equivalent, key selection factors include L-version standby current (1.0mA max), data retention at 2V, byte-select capability, and SOJ-44 package compatibility with legacy board layouts.
Technical Context
The R1RP0416DGE-2LR#B1 implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its operation relies on asynchronous control via CS#, OE#, WE#, LB#, and UB# signals, enabling independent upper/lower byte access without external logic.
It supports TTL-level input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and delivers VOH ≥ 2.4V at −4mA and VOL ≤ 0.4V at 8mA. The L-version guarantees 1.0mA max CMOS standby current and 0.5mA max data retention current at VCC = 3V, with data retention functional down to VCC = 2.0V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4 Mbit (256 kwords × 16 bits); supports 16-bit parallel data path for efficient burst transfers |
| Access time | 12 ns (max); enables integration into 83 MHz synchronous bus systems with margin |
| Supply voltage | 5.0 V ±10%; compatible with standard TTL/CMOS logic rails without regulation overhead |
| Standby current | 1.0 mA (max, L-version); reduces power in idle states for battery-backed or low-duty-cycle systems |
| Data retention voltage | 2.0 V (min); maintains stored data during brown-out or controlled power-down sequences |
| Operating temperature | 0°C to +70°C; qualified for commercial and industrial ambient environments |
| Package | 400-mil 44-pin plastic SOJ; surface-mount compatible with standard reflow profiles and legacy socket footprints |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (Small Outline J-Lead), center VCC/VSS configuration, JEDEC MS-025 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no address multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus; electrically isolated per byte via LB#/UB# control |
| CS# | Chip select | Active-low enable; places device in standby when high, overriding all other controls |
| OE# | Output enable | Active-low gate for output drivers; allows read operations while WE# remains high |
| WE# | Write enable | Active-low write strobe; initiates write cycle when CS# and LB#/UB# are also asserted |
| LB# / UB# | Byte select | Independent active-low controls for lower (I/O1–I/O8) and upper (I/O9–I/O16) bytes |
| VCC | Power supply | Primary 5V supply; multiple pins distributed centrally to minimize IR drop and noise coupling |
| VSS | Ground | Reference ground; multiple pins placed adjacent to VCC for low-inductance return paths |
| NC | No connection | Unbonded pin; must remain unconnected to avoid unintended parasitic coupling |
Key Features
| Feature | Design Value |
|---|---|
| Single 5V supply operation | Eliminates need for dual-rail regulators or level shifters in mixed-voltage systems |
| L-version ultra-low standby current | 1.0 mA max enables >100-hour retention in battery-backed SRAM applications |
| Byte-select architecture | Reduces bus contention and simplifies glue logic by enabling partial-word writes without masking |
| TTL-compatible interface | Direct connection to legacy microprocessor buses (e.g., Intel 80x86, Motorola 68k) without buffers |
| Static operation | No clocks, timers, or refresh cycles required-simplifies timing design and eliminates hidden latency |
Applications
| Cache Memory | Buffer Memory |
|---|---|
|
Use Scenario: High-speed instruction/data cache between CPU and main memory in industrial controllers. IC Role / Device Role / Timing Role: Low-latency, deterministic-access storage holding recently used code or data blocks. Use Value: 12ns access time reduces average memory wait states, improving real-time determinism in PLC scan cycles. |
Use Scenario: Temporary data staging between UART peripherals and host processor in protocol gateways. IC Role / Device Role / Timing Role: Synchronous FIFO replacement with parallel 16-bit interface for burst packet handling. Use Value: Byte-select capability allows efficient handling of odd-length packets without software padding overhead. |
| Network Packet Buffer | Test Equipment Data Capture |
|
Use Scenario: Frame buffering in Ethernet MAC layer implementations for store-and-forward switching. IC Role / Device Role / Timing Role: Dual-port accessible memory for concurrent ingress/egress packet assembly. Use Value: Center VCC/VSS pinout improves signal integrity on dense PCBs, reducing bit errors in 100 Mbps+ traffic. |
Use Scenario: Real-time waveform capture buffer in digital oscilloscopes and logic analyzers. IC Role / Device Role / Timing Role: High-bandwidth, non-refreshing memory capturing sampled analog/digital data streams. Use Value: 16-bit width matches ADC/DAC bus widths, enabling single-cycle data ingestion at up to 83 MS/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 3.3V-only supply; 12ns access; 44-pin TSOP-II; no L-version low-power mode | Requires level-shifting in 5V systems; lacks 2V data retention capability | Select when migrating to 3.3V domain and board space favors TSOP-II over SOJ |
| AS6C4008-12ZIN | 5V supply; 12ns access; 44-pin SOJ; 5mA max standby (not L-version) | Higher standby current limits battery life in always-on retention use cases | Select when cost sensitivity outweighs ultra-low standby requirement and pinout compatibility is critical |
Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RP0416DGE-2LR#B1 uniquely combines 5V operation, SOJ-44 footprint, 12ns speed, and L-version 1.0mA standby-making it optimal for legacy 5V industrial designs requiring extended data retention without layout change.
Availability
R1RP0416DGE-2LR#B1 is available at Aetrix Electronics and suitable for cache memory, buffer memory, network packet buffering, and test equipment data capture requiring stable component supply across long-lifecycle industrial programs.
Supply support for R1RP0416DGE-2LR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was designed specifically for high-speed, wide-bus parallel memory applications in legacy and upgrade-path industrial systems where reliability, pinout stability, and 5V compatibility are mandatory.
FAQ
What is the maximum operating current for R1RP0416DGE-2LR#B1 during active read cycles?
The R1RP0416DGE-2LR#B1 draws a maximum operating current of 160 mA during 12ns-cycle read operations at VCC = 5.0V ±10%. This value is measured under worst-case conditions with CS# = VIL, all outputs loaded, and all inputs driven to VIH/VIL levels. The L-version's optimized circuitry achieves this while maintaining 1.0mA standby current.
Does R1RP0416DGE-2LR#B1 support independent byte writes without affecting the opposite byte?
Yes, the R1RP0416DGE-2LR#B1 supports true independent byte writes using LB# and UB# control signals. When LB# is low and UB# is high, only I/O1–I/O8 are written; when UB# is low and LB# is high, only I/O9–I/O16 are written. The unselected byte remains undisturbed, preserving data integrity without software masking.
What is the minimum VCC required to retain data in R1RP0416DGE-2LR#B1?
The R1RP0416DGE-2LR#B1 guarantees data retention down to VCC = 2.0 V, as specified in the L-version characteristics. This applies when CS# is held within VCC − 0.2V to VCC and input voltages are clamped to either 0–0.2V or VCC − 0.2V to VCC. Retention current remains ≤500 µA at VCC = 3V.
Is R1RP0416DGE-2LR#B1 pin-compatible with other members of the R1RP0416D Series?
Yes, all R1RP0416D Series variants-including R1RP0416DGE-2PR, R1RP0416DGE-2SR, and R1RP0416DSB-2LR-share identical 44-pin SOJ or TSOPII pinouts and signal definitions. The R1RP0416DGE-2LR#B1 uses the same SOJ-44 footprint and pin mapping as the -2PR and -2SR versions, differing only in standby current and retention specs.
What does the "L-version" designation mean for R1RP0416DGE-2LR#B1?
The "L-version" in R1RP0416DGE-2LR#B1 denotes Renesas' low-power variant, characterized by 1.0mA max CMOS standby current and 0.5mA max data retention current. These values are guaranteed only for this version and are not shared with the Normal or S-version parts. The L-version also supports full data retention at VCC = 2.0V.
R1RP0416DGE-2LR#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RP0416DGE-2LR#B1 FAQ
1.How can I place an order for R1RP0416DGE-2LR#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DGE-2LR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DGE-2LR#B1 reliable?
The price and inventory of R1RP0416DGE-2LR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DGE-2LR#B1 is usually 5 days.
3.What payment methods are accepted for R1RP0416DGE-2LR#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DGE-2LR#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DGE-2LR#B1?
R1RP0416DGE-2LR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DGE-2LR#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DGE-2LR#B1?
For technical support, including R1RP0416DGE-2LR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DGE-2LR#B1 requirements.
6.How does Aetrix verify that R1RP0416DGE-2LR#B1 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DGE-2LR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DGE-2LR#B1 meets industry standards.
7.What is the process for return or replacement of R1RP0416DGE-2LR#B1?
All R1RP0416DGE-2LR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DGE-2LR#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DGE-2LR#B1 part is unused and in its original packaging.
Return procedure for R1RP0416DGE-2LR#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DGE-2LR#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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