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Renesas R1RP0416DGE-2PR#B0
- Part No.:
- R1RP0416DGE-2PR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DGE-2PR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,874
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Product details
Overview
R1RP0416DGE-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0 V ±10% supply with 12 ns maximum access time. It features TTL-compatible I/Os, center VCC/VSS pinout, and supports independent upper/lower byte write via UB#/LB# control-designed for cache and buffer memory in high-performance embedded systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RP0416DGE-2PR#B0 datasheet, R1RP0416DGE-2PR#B0 pinout, R1RP0416DGE-2PR#B0 application, or R1RP0416DGE-2PR#B0 equivalent, this page delivers verified specifications, SOJ-44 package details, byte-select SRAM operation context, retention behavior at low VCC, and validated alternative parts for system-level memory substitution.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with no clocks or refresh required. Its dual-byte write capability (UB#/LB#) enables selective 8-bit writes without read-modify-write cycles, and its equal access/cycle times simplify timing-critical controller interface design.
The device uses center VCC/VSS power distribution to minimize noise coupling across the 16-bit data bus. Standby current drops to 5 mA (max) in L-version mode under specific bias conditions, supporting low-power retention down to 2.0 V VCC with ≤500 µA draw.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - provides full 16-bit parallel data path for efficient CPU/DSP interfacing |
| Access time | 12 ns (max) - guarantees worst-case read latency for real-time buffer applications |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS logic domains without level translation |
| Operating current | 160 mA (max) - defines peak power budget during active read/write bursts |
| Standby current | 5 mA (max, L-version) - enables low-power hold mode during system sleep states |
| Data retention VCC | 2.0 V (min, L-version) - allows memory state preservation during brown-out or controlled power-down |
| Package | 400-mil 44-pin plastic SOJ (44P0K) - industry-standard surface-mount footprint with gull-wing leads |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (44P0K), gull-wing lead form, JEDEC standard outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing space |
| I/O1–I/O8 | Lower data I/O | 8-bit bidirectional data path enabled by LB# assertion |
| I/O9–I/O16 | Upper data I/O | 8-bit bidirectional data path enabled by UB# assertion |
| CS# | Chip select | Active-low enable controlling device activation and standby entry |
| OE# | Output enable | Active-low control for output buffer tri-state; independent of WE# |
| WE# | Write enable | Active-low signal initiating write cycle; must be synchronized with CS# and byte selects |
| UB#, LB# | Byte select | Independent active-low controls enabling upper or lower 8-bit write without affecting opposite byte |
| VCC, VSS | Power/Ground | Center-placed dual VCC/VSS pins reduce simultaneous switching noise on data bus |
| NC | No connection | Pin 23 is unconnected; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, refresh, or timing strobe required - eliminates controller overhead and timing jitter sensitivity |
| Byte-select write control | Independent UB#/LB# inputs allow 8-bit partial writes without read-modify-write, reducing bus traffic and latency |
| TTL-compatible I/O | All inputs and outputs meet TTL voltage thresholds - enables direct interfacing with 5 V microcontrollers and FPGAs |
| Low-voltage data retention | Retains valid data at VCC ≥ 2.0 V with ≤500 µA current - supports graceful power-fail handling in industrial systems |
| Center power pinout | VCC and VSS placed centrally (pins 10/11 and 33/34) - improves signal integrity across 16-bit data bus |
Applications
| Cache Memory | Buffer Memory |
|---|---|
Use Scenario: High-speed instruction/data cache between CPU core and main memory in industrial controllers. IC Role / Device Role / Timing Role: Static RAM providing zero-wait-state access to frequently used code blocks with deterministic 12 ns latency. Use Value: Eliminates pipeline stalls caused by DRAM latency, improving real-time determinism in motion control firmware. | Use Scenario: Temporary storage for sensor data aggregation in programmable logic controllers before Ethernet transmission. IC Role / Device Role / Timing Role: Dual-port-capable buffer holding 256 kwords of 16-bit analog measurement samples prior to packetization. Use Value: Enables burst capture at full ADC sampling rate without DMA contention, preserving timestamp accuracy. |
| Communications Interface | Legacy System Upgrade |
Use Scenario: Frame buffering in serial protocol gateways translating RS-485 Modbus to CAN FD. IC Role / Device Role / Timing Role: Asynchronous SRAM acting as FIFO between UART controller and CAN message scheduler. Use Value: Absorbs timing mismatches between variable-length Modbus RTU frames and fixed CAN FD payload windows. | Use Scenario: Drop-in replacement for obsolete 44-pin SOJ SRAMs in aging test equipment mainboards. IC Role / Device Role / Timing Role: Pin- and timing-compatible upgrade delivering same 256k×16 organization with improved 12 ns access. Use Value: Extends product lifecycle without PCB redesign, maintaining backward compatibility with existing 5 V logic interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZAXI | 3.3 V supply only; 45 ns access; 512-kword × 8-bit organization | Requires level-shifting for 5 V systems; narrower data bus necessitates two devices for 16-bit width | Select when migrating to 3.3 V domain and accepting longer access latency |
| IS61LV25616AL-12TQLI | 3.3 V supply; 12 ns access; identical 256-kword × 16-bit organization | Not pin-compatible with SOJ-44; uses 44-pin TSOP II (44P3W-H) with different pin mapping | Choose for same-speed 16-bit operation where board layout allows TSOP II footprint |
Compared with R1RP0416DGE-2PR#B0, CY62148EV30LL-45ZAXI trades voltage compatibility and bus width for lower power, while IS61LV25616AL-12TQLI matches speed and organization but requires PCB rework due to non-identical SOJ-to-TSOP II pinout.
Availability
R1RP0416DGE-2PR#B0 is available at Aetrix Electronics and suitable for industrial automation, test equipment, and legacy system maintenance requiring stable component supply and long-term obsolescence management.
Supply support for R1RP0416DGE-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial and automotive markets.
The R1RP0416D Series was designed as a high-speed, 5 V-compatible SRAM family targeting cache and buffer roles in legacy and cost-sensitive embedded systems where deterministic timing and wide data paths are critical.
FAQ
What is the maximum operating temperature range for R1RP0416DGE-2PR#B0?
The R1RP0416DGE-2PR#B0 is rated for operation from 0°C to +70°C ambient temperature, consistent with its "Standard" quality grade classification per Renesas documentation. This range supports use in office equipment, industrial robots, and communications infrastructure where environmental control is present. Operation outside this range may cause parametric shift or functional failure, and is not guaranteed by Renesas.
Does R1RP0416DGE-2PR#B0 support true 16-bit concurrent read/write operations?
No, R1RP0416DGE-2PR#B0 does not support true concurrent 16-bit read/write. It performs single-cycle reads or writes across all 16 bits when both UB# and LB# are asserted, but byte-select functionality (UB# or LB# alone) restricts activity to 8-bit subsets. The device lacks internal dual-port architecture; all accesses are serialized through a shared memory array.
Is R1RP0416DGE-2PR#B0 RoHS compliant?
Yes, R1RP0416DGE-2PR#B0 complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance statements. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits, and is suitable for use in environmentally regulated markets.
Can R1RP0416DGE-2PR#B0 operate reliably at 4.5 V supply?
Yes, R1RP0416DGE-2PR#B0 is specified to operate across 4.5 V to 5.5 V (5.0 V ±10%), so 4.5 V is within its guaranteed DC operating range. At this minimum VCC, access time remains ≤12 ns and all AC/DC parameters hold per the datasheet's recommended conditions, provided temperature stays within 0°C to +70°C.
What is the function of the NC pin on R1RP0416DGE-2PR#B0?
Pin 23 of R1RP0416DGE-2PR#B0 is designated NC (No Connection) and must remain unconnected in the circuit. Renesas specifies no internal bonding or circuitry at this location; routing traces to it or applying voltage may cause undefined behavior. Layout best practice is to leave the pad floating or tie it to ground only if required for mechanical stability, never to VCC.
R1RP0416DGE-2PR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RP0416DGE-2PR#B0 FAQ
1.How can I place an order for R1RP0416DGE-2PR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DGE-2PR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DGE-2PR#B0 reliable?
The price and inventory of R1RP0416DGE-2PR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DGE-2PR#B0 is usually 5 days.
3.What payment methods are accepted for R1RP0416DGE-2PR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DGE-2PR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DGE-2PR#B0?
R1RP0416DGE-2PR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DGE-2PR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DGE-2PR#B0?
For technical support, including R1RP0416DGE-2PR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DGE-2PR#B0 requirements.
6.How does Aetrix verify that R1RP0416DGE-2PR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DGE-2PR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DGE-2PR#B0 meets industry standards.
7.What is the process for return or replacement of R1RP0416DGE-2PR#B0?
All R1RP0416DGE-2PR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DGE-2PR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DGE-2PR#B0 part is unused and in its original packaging.
Return procedure for R1RP0416DGE-2PR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DGE-2PR#B0 Tags
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