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Renesas R1RP0416DGE-2PR#B1
- Part No.:
- R1RP0416DGE-2PR#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DGE-2PR#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,189
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Product details
Overview
R1RP0416DGE-2PR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time, TTL-compatible I/O, and center VCC/VSS pinout-designed for cache and buffer memory in high-performance computing and industrial control systems.
For engineers reviewing the R1RP0416DGE-2PR#B1 datasheet, R1RP0416DGE-2PR#B1 pinout, R1RP0416DGE-2PR#B1 application, or R1RP0416DGE-2PR#B1 equivalent, key selection criteria include 12ns read/write cycle timing, byte-selectable 16-bit I/O architecture, low-power standby modes (5mA CMOS), and SOJ-44 package compatibility with legacy memory bus designs.
Technical Context
This SRAM implements a fully static 6-transistor cell architecture with no clocks or refresh required. Its operation relies on asynchronous control via CS#, OE#, WE#, UB#, and LB# to enable independent upper/lower byte access and high-impedance tri-state outputs during deselect or disable states.
The device supports simultaneous address and control setup with zero address setup time (tAS = 0 ns) and zero write recovery time (tWR = 0 ns), enabling tight timing margins in burst-mode or pipeline memory interfaces. Data retention is guaranteed down to 2.0V VCC for L- and S-versions, though R1RP0416DGE-2PR#B1 is the Normal version with 40mA TTL standby current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - provides wide-data-path buffering without external data-width expansion logic |
| Access time | 12 ns (max) - defines minimum read cycle interval for synchronous bus interfacing at up to ~83 MHz effective rate |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5V TTL/CMOS system rails without level-shifting circuitry |
| Operating current | 160 mA (max) - determines thermal design margin and power rail capacity for sustained random-access workloads |
| Standby current | 40 mA (TTL mode, max) - sets baseline power draw during idle periods in non-low-power systems |
| I/O interface | TTL-compatible inputs/outputs - ensures direct connection to 5V microcontrollers, FPGAs, and ASICs without interface buffers |
| Data retention voltage | 2.0 V (min) - enables low-voltage hold mode during controlled power-down sequences |
Pinout & Package
Packaged in 400-mil 44-pin plastic SOJ (Small Outline J-Lead) with center VCC/VSS pin arrangement for balanced power distribution and reduced noise coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no internal multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus with true tri-state control per byte via UB#/LB# |
| CS# | Chip select | Active-low global enable; places device in standby when high, overriding all other controls |
| OE# | Output enable | Active-low read gate; controls output drivers independently of CS# for shared-bus contention management |
| WE# | Write enable | Active-low write strobe; latches data on I/O pins when CS# and LB#/UB# are also asserted |
| UB#, LB# | Upper/lower byte select | Independent 8-bit write masking; allows partial-word writes without read-modify-write cycles |
| VCC | Power supply | Center-located 5V supply pin; multiple VCC pins (per datasheet) reduce IR drop across package |
| VSS | Ground | Center-located ground pin; multiple VSS pins improve noise immunity and signal return path integrity |
| NC | No connection | Unbonded pin; must remain unconnected to avoid unintended parasitic coupling or mechanical stress |
Key Features
| Feature | Design Value |
|---|---|
| Single 5V supply operation | Eliminates need for dual-rail regulators or charge pumps in 5V system designs |
| Zero address setup/recovery times | Enables direct connection to microprocessor buses with no wait-state insertion or glue logic |
| Byte-selectable write capability | Reduces bus traffic and processor overhead by allowing 8-bit updates within 16-bit word space |
| Direct TTL compatibility | Permits interoperability with legacy 5V logic families without level translators or pull-up resistors |
| Center VCC/VSS pinout | Improves power delivery symmetry and reduces simultaneous switching noise in high-speed parallel interfaces |
Applications
| Cache Memory | Buffer Memory |
|---|---|
|
Use Scenario: High-speed instruction/data cache between CPU and main memory in industrial PLCs and test equipment. IC Role / Device Role / Timing Role: Asynchronous static storage holding recently accessed instructions or operands, accessed on every CPU cycle with sub-12ns latency. Use Value: Enables deterministic execution timing and eliminates cache-miss penalties typical of DRAM-based caches. |
Use Scenario: Real-time data buffering in serial-to-parallel conversion for industrial fieldbus gateways (e.g., Modbus RTU to Ethernet). IC Role / Device Role / Timing Role: Dual-port-like temporary storage staging incoming packet payloads before protocol processing or retransmission. Use Value: Absorbs bursty traffic without flow-control signaling, maintaining line-rate throughput under variable host CPU load. |
| Video Frame Buffer | Embedded Controller Memory |
|
Use Scenario: Intermediate frame storage in digital signage controllers rendering 1080p graphics with double-buffering. IC Role / Device Role / Timing Role: Dedicated 16-bit-wide memory bank providing pixel data to display controller during active scan lines. Use Value: Supports seamless page-flipping and avoids tearing artifacts by decoupling rendering and display timing domains. |
Use Scenario: Program/data memory extension for 16-bit microcontrollers in automotive body control modules. IC Role / Device Role / Timing Role: Off-chip XDATA space expansion for firmware overlays and dynamic configuration tables. Use Value: Increases available memory footprint without requiring MCU replacement or architectural redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 3V core supply, 45ns access, 512k × 16-bit density, TSOP-II package | Lower speed and different voltage domain; requires level-shifting for 5V bus integration | Select only if migrating to 3.3V system architecture and accepting longer access latency |
| IS61LV25616AL-12MLI | 3.3V supply, 12ns access, 256k × 16-bit, SOJ-44 package, 32mA CMOS standby | Same density and speed grade but incompatible 3.3V I/O levels; not TTL-compatible | Choose when upgrading to lower-power 3.3V design and adding translation logic is acceptable |
Compared with CY62167EV30LL-45ZSXIT and IS61LV25616AL-12MLI, R1RP0416DGE-2PR#B1 uniquely delivers 5V TTL compatibility, 12ns timing, and SOJ-44 footprint in a single part-making it the only drop-in solution for legacy 5V memory bus upgrades without layout or voltage rail changes.
Availability
R1RP0416DGE-2PR#B1 is available at Aetrix Electronics and suitable for cache memory, buffer memory, video frame buffering, and embedded controller memory applications requiring stable component supply across industrial, test & measurement, and digital signage product lifecycles.
Supply support for R1RP0416DGE-2PR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was designed specifically for high-speed, wide-bit-width parallel memory applications in 5V systems where deterministic latency and TTL interoperability are critical-targeting cache, buffer, and frame storage roles in real-time embedded platforms.
FAQ
What is the maximum operating temperature range for R1RP0416DGE-2PR#B1?
R1RP0416DGE-2PR#B1 is rated for operation from 0°C to +70°C ambient temperature, per its Recommended Operating Conditions. This commercial-grade temperature range aligns with standard industrial control and computing environments where airflow and board-level thermal management are present. The device's absolute maximum storage temperature extends to −55°C to +125°C, supporting reflow soldering and long-term shelf storage.
Does R1RP0416DGE-2PR#B1 support independent upper and lower byte writes?
Yes, R1RP0416DGE-2PR#B1 supports independent byte writes using UB# (upper byte, I/O9–I/O16) and LB# (lower byte, I/O1–I/O8). When only one byte select is asserted low with CS# and WE# active, only that 8-bit segment is written; the complementary byte remains unchanged. This eliminates read-modify-write overhead in partial-word update scenarios common in protocol stack and register-mapped peripheral buffering.
What is the pinout configuration of R1RP0416DGE-2PR#B1 and why does it matter?
R1RP0416DGE-2PR#B1 uses a center VCC/VSS pinout in its 44-pin SOJ package, with power and ground pins symmetrically placed near the middle of each long edge. This layout minimizes power delivery impedance and reduces simultaneous switching output (SSO) noise-critical for maintaining signal integrity on 16-bit parallel buses running at 12ns timing. It also ensures backward compatibility with existing SOJ-44 memory footprints designed for similar Renesas SRAMs.
Can R1RP0416DGE-2PR#B1 operate with a 3.3V supply?
No, R1RP0416DGE-2PR#B1 is specified exclusively for 5.0V ±10% operation (4.5V to 5.5V). Its internal circuitry, including the 6-transistor SRAM cell and input threshold levels (VIH ≥ 2.2V, VIL ≤ 0.8V), is optimized for 5V TTL logic families. Applying 3.3V will result in undefined behavior, failed reads/writes, and potential data corruption. For 3.3V systems, consider functionally similar but voltage-specified alternatives like IS61LV25616AL-12MLI.
What is the standby current specification for R1RP0416DGE-2PR#B1?
R1RP0416DGE-2PR#B1 specifies a maximum TTL standby current of 40mA when CS# is high and all other inputs are at valid VIH/VIL levels. This reflects its Normal version designation-distinct from the L-version (5mA max) and S-version (1.0mA max). The 40mA value represents worst-case leakage under full 5V bias and must be accounted for in total system standby power budgeting for always-on industrial controllers.
R1RP0416DGE-2PR#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RP0416DGE-2PR#B1 FAQ
1.How can I place an order for R1RP0416DGE-2PR#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DGE-2PR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DGE-2PR#B1 reliable?
The price and inventory of R1RP0416DGE-2PR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DGE-2PR#B1 is usually 5 days.
3.What payment methods are accepted for R1RP0416DGE-2PR#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DGE-2PR#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DGE-2PR#B1?
R1RP0416DGE-2PR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DGE-2PR#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DGE-2PR#B1?
For technical support, including R1RP0416DGE-2PR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DGE-2PR#B1 requirements.
6.How does Aetrix verify that R1RP0416DGE-2PR#B1 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DGE-2PR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DGE-2PR#B1 meets industry standards.
7.What is the process for return or replacement of R1RP0416DGE-2PR#B1?
All R1RP0416DGE-2PR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DGE-2PR#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DGE-2PR#B1 part is unused and in its original packaging.
Return procedure for R1RP0416DGE-2PR#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DGE-2PR#B1 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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