Renesas R1RP0416DSB-0PI#D1

Overview

R1RP0416DSB-0PI#D1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, fabricated using CMOS 6-transistor memory cell technology. It delivers 10 ns max access time, operates on a single 5.0 V ±10% supply, and supports wide-temperature operation from −40°C to +85°C. It is used in cache and buffer memory subsystems requiring high bandwidth and byte-selectable I/O in industrial control and networking equipment.

For engineers reviewing the R1RP0416DSB-0PI#D1 datasheet, R1RP0416DSB-0PI#D1 pinout, R1RP0416DSB-0PI#D1 application, or R1RP0416DSB-0PI#D1 equivalent, key selection criteria include 10 ns access timing, TSOPII-44 package compatibility, TTL-level I/O interface, and low-power standby modes (5 mA CMOS / 40 mA TTL).

Technical Context

This SRAM implements fully static operation-no clocks or refresh cycles required-and features independent upper/lower byte enables (UB#/LB#) for efficient 8-bit data transfers within the 16-bit bus. Its center VCC/VSS pinout minimizes power distribution inductance and supports direct TTL compatibility on all inputs and outputs.

The device uses asynchronous control with three enable signals (CS#, OE#, WE#) and supports multiple read/write modes including full-word, upper-byte-only, and lower-byte-only operations. All timing parameters-including tRC = 10 ns, tAA = 10 ns, and tOE = 5 ns-are specified over the full −40°C to +85°C temperature range at VCC = 5.0 V ±10%.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic Thin Small Outline Package, Type II (TSOPII), JEDEC MO-118 compliant, with gull-wing leads and center VCC/VSS configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-10TIN, the R1RP0416DSB-0PI#D1 uniquely combines 5 V operation, 16-bit native bus width, and 10 ns timing in a single TSOPII-44 package-reducing component count and simplifying timing closure in industrial and automotive control systems.

Availability

R1RP0416DSB-0PI#D1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet buffering, and medical imaging frame storage requiring stable component supply across extended product lifecycles.

Supply support for R1RP0416DSB-0PI#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RP0416DI Series was designed specifically for high-reliability, wide-temperature SRAM applications in industrial automation and communications equipment where 5 V compatibility and deterministic 10 ns timing are mandatory.

FAQ

What is the maximum operating frequency supported by the R1RP0416DSB-0PI#D1?

The R1RP0416DSB-0PI#D1 does not use a clock; it is an asynchronous SRAM. Its 10 ns access time and 10 ns cycle time (tRC) allow reliable operation with CPU or bus controllers running up to 100 MHz without wait states. Timing margins must be verified against actual board trace delays and driver strength per the AC characteristics table in the R10DS0285EJ0100 datasheet.

Does the R1RP0416DSB-0PI#D1 support partial writes without affecting adjacent bytes?

Yes. The R1RP0416DSB-0PI#D1 supports independent upper- and lower-byte writes via UB# and LB# control signals. When only LB# is asserted low (with UB# high), only I/O1–I/O8 are written; when only UB# is low, only I/O9–I/O16 are updated. This prevents unintended modification of the opposite byte during partial writes.

What is the difference between ISB and ISB1 standby current specifications for the R1RP0416DSB-0PI#D1?

ISB (40 mA max) applies when CS# is high and other inputs are at valid TTL levels; ISB1 (5 mA max) applies under deeper standby conditions where CS# ≥ VCC − 0.2 V and all inputs are clamped near VSS or VCC. ISB1 represents true CMOS standby mode and requires precise input biasing-designers must ensure proper termination to achieve this value.

Can the R1RP0416DSB-0PI#D1 be used in place of the R1RP0416DGE-2PI in an existing design?

No. Although both are in the R1RP0416DI Series, the R1RP0416DSB-0PI#D1 uses a 400-mil 44-pin TSOPII package, while the R1RP0416DGE-2PI uses a 400-mil 44-pin SOJ package. Their pinouts differ-SOJ has J-bend leads and reversed pin 1 marking-and they are not mechanically or electrically interchangeable without PCB redesign.

Is the R1RP0416DSB-0PI#D1 RoHS compliant and lead-free?

Yes. The R1RP0416DSB-0PI#D1 is RoHS compliant and lead-free, as confirmed by Renesas' official product change notices and material declarations referenced in document PCN-2021-07-01. The "#D1" suffix denotes lead-free, halogen-free packaging meeting JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).