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Renesas R1RP0416DSB-2LR#B0
- Part No.:
- R1RP0416DSB-2LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DSB-2LR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,315
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Product details
Overview
R1RP0416DSB-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, designed for cache and buffer memory in high-performance systems. It operates from a single 5.0 V ±10% supply, delivers 12 ns max access time, supports byte-selectable read/write operations via UB#/LB#, and uses CMOS technology with TTL-compatible I/Os.
For engineers reviewing the R1RP0416DSB-2LR#B0 datasheet, R1RP0416DSB-2LR#B0 pinout, R1RP0416DSB-2LR#B0 application, or R1RP0416DSB-2LR#B0 equivalent, key selection criteria include 44-pin TSOPII package compatibility, 16-bit parallel data interface, low-power standby modes (5 mA max), and strict 0°C to +70°C industrial temperature operation.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with no clocks or refresh required. Its dual-byte control (UB#/LB#) enables independent 8-bit access to upper and lower data bytes without external logic, while center VCC/VSS pinout optimizes power distribution and signal integrity on dense PCB layouts.
The device supports three distinct operating modes-read, write, and standby-with separate current specifications for each: 160 mA max active ICC, 40 mA max TTL standby ISB, and 5 mA max CMOS standby ISB1 (L-version). Data retention is guaranteed down to 2.0 V VCC with ≤500 µA current draw.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - provides wide-data-path buffering for microprocessor buses and DSP interfaces |
| Access time | 12 ns max - enables direct interfacing with 80 MHz system clocks without wait states |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS logic families without level shifting |
| Operating temperature | 0°C to +70°C - qualified for commercial and industrial embedded applications |
| Standby current | 5 mA max (ISB1, L-version) - reduces power in idle states for battery-backed or energy-sensitive systems |
| Data retention voltage | 2.0 V min - maintains stored data during brown-out or controlled power-down sequences |
| Package | 400-mil 44-pin plastic TSOPII (44P3W-H) - surface-mount footprint with 0.8 mm pitch, JEDEC-compliant for automated assembly |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (44P3W-H), lead-free per RoHS, center VCC/VSS configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; A0 = LSB, A17 = MSB |
| I/O1–I/O8 | Lower data I/O | Bi-directional 8-bit data path enabled only when LB# = low and CS# = low |
| I/O9–I/O16 | Upper data I/O | Bi-directional 8-bit data path enabled only when UB# = low and CS# = low |
| CS# | Chip select | Active-low enable controlling all internal operations; high = standby mode |
| OE# | Output enable | Active-low control for output drivers; used with CS# and LB#/UB# to gate read data |
| WE# | Write enable | Active-low signal initiating write cycles; must be low with CS# and selected byte enable |
| UB# / LB# | Byte select | Independent active-low controls for upper/lower 8-bit data lanes; allow partial-word writes |
| VCC / VSS | Power / Ground | Center-placed dual VCC and dual VSS pins minimize IR drop and improve noise immunity |
| NC | No connection | Pin 23 is unconnected; must remain floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-voltage regulators or level translators in 5 V system designs |
| Equal access and cycle times | 12 ns tRC = tAA simplifies timing budgeting and eliminates pipeline stalls in burst transfers |
| TTL-compatible I/Os | Direct interface with 74LS/74HC logic and microcontroller GPIOs without external buffers |
| Byte-selectable read/write | UB#/LB# pins enable 8-bit sub-word access, reducing bus contention and power per transaction |
| Low data retention current | ≤500 µA at 2.0 V VCC allows extended hold time in backup power scenarios |
Applications
| Cache Memory | Buffer Memory |
|---|---|
Use Scenario: High-speed instruction/data cache between CPU and main memory in industrial controllers. IC Role / Device Role / Timing Role: SRAM acting as zero-wait-state cache with 12 ns access enabling full-speed CPU execution. Use Value: Eliminates memory wait states, increasing effective MIPS by up to 35% in real-time control loops. | Use Scenario: FIFO buffer for video frame capture in machine vision systems. IC Role / Device Role / Timing Role: 16-bit parallel buffer storing uncompressed pixel data from image sensors before DMA transfer. Use Value: 256-kword depth supports full VGA (640×480) frame buffering at 8-bit grayscale resolution. |
| Network Packet Buffer | Industrial PLC Data Table |
Use Scenario: Temporary storage of Ethernet packets in switch fabric ASIC support circuitry. IC Role / Device Role / Timing Role: Dual-port accessible SRAM holding ingress/egress packet headers and payload fragments. Use Value: Byte-select capability allows header-only reads and payload-only writes, optimizing bandwidth utilization. | Use Scenario: Retentive data table storage in programmable logic controllers handling I/O mapping and alarm history. IC Role / Device Role / Timing Role: Non-refreshing memory preserving critical process variables during brief AC line interruptions. Use Value: 2.0 V data retention threshold ensures >100 ms hold time with standard 3.3 V backup capacitor networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZAXI | 3 V core supply, 45 ns access, 512-kword × 16-bit, TSOP II package | Lower power but slower; requires level-shifting for 5 V systems | Select when migrating to 3.3 V systems and latency tolerance >45 ns |
| AS6C4008-55PCN | 5 V supply, 55 ns access, 256-kword × 16-bit, SOJ package | Same organization but significantly slower; SOJ vs TSOPII footprint mismatch | Consider only for cost-sensitive, non-critical timing applications where board rework is acceptable |
Compared with R1RP0416DSB-2LR#B0, CY62167EV30LL-45ZAXI offers lower voltage operation but sacrifices 3.7× speed, while AS6C4008-55PCN retains 5 V compatibility but doubles access latency and requires PCB redesign due to SOJ-to-TSOPII package incompatibility.
Availability
R1RP0416DSB-2LR#B0 is available at Aetrix Electronics and suitable for cache memory, buffer memory, network packet buffering, and industrial PLC data table applications requiring stable component supply across multi-year production cycles.
Supply support for R1RP0416DSB-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.
The R1RP0416D Series was developed for high-speed, wide-bit-width memory applications in industrial computing and communications infrastructure, emphasizing reliability under continuous operation at 5 V.
FAQ
What is the maximum operating frequency supported by the R1RP0416DSB-2LR#B0?
The R1RP0416DSB-2LR#B0 does not operate on a clock signal-it is a fully static RAM with no internal timing generator. Its 12 ns access time supports system bus frequencies up to approximately 83 MHz (1/12 ns) in zero-wait-state configurations. Timing margins must account for PCB trace delays, driver strength, and load capacitance as specified in the AC characteristics table of the R1RP0416DSB-2LR#B0 datasheet.
Does the R1RP0416DSB-2LR#B0 support true dual-port operation?
No, the R1RP0416DSB-2LR#B0 is a single-port SRAM with one shared address and data bus. It supports simultaneous read and write only through external multiplexing or time-division-there is no dedicated second port or internal arbitration logic. The R1RP0416DSB-2LR#B0 uses standard CS#/OE#/WE# control signals and does not implement dual-clock or independent read/write ports.
What is the meaning of the "L-version" designation in R1RP0416DSB-2LR#B0's standby current specification?
The "L-version" in R1RP0416DSB-2LR#B0 refers to a specific process variant optimized for low standby current: ISB1 ≤ 5 mA and data retention current ≤ 500 µA at VCC = 2.0 V. This version is explicitly validated for low-power hold modes and is distinct from standard versions with higher ISB (≤40 mA). The R1RP0416DSB-2LR#B0 part number confirms L-version qualification per the ordering information table.
Can the R1RP0416DSB-2LR#B0 be used with a 3.3 V microcontroller interface?
No, the R1RP0416DSB-2LR#B0 requires a 5.0 V ±10% supply and has TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), but its outputs swing to 5 V levels. Direct connection to 3.3 V-only I/Os risks overvoltage damage. Level translation-such as TI SN74AVC4T245 or discrete resistor dividers-is mandatory. The R1RP0416DSB-2LR#B0 itself does not support mixed-voltage operation.
Is the NC pin (pin 23) on the R1RP0416DSB-2LR#B0 required to be grounded?
No, pin 23 of the R1RP0416DSB-2LR#B0 is designated NC (No Connection) and must remain electrically unconnected-neither grounded nor tied to VCC. Per the official pin description table, NC pins have no internal bonding or function. Routing a trace to this pin or connecting it may cause unintended coupling or violate the R1RP0416DSB-2LR#B0's validated signal integrity model.
R1RP0416DSB-2LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RP0416DSB-2LR#B0 FAQ
1.How can I place an order for R1RP0416DSB-2LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DSB-2LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DSB-2LR#B0 reliable?
The price and inventory of R1RP0416DSB-2LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DSB-2LR#B0 is usually 5 days.
3.What payment methods are accepted for R1RP0416DSB-2LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DSB-2LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DSB-2LR#B0?
R1RP0416DSB-2LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DSB-2LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DSB-2LR#B0?
For technical support, including R1RP0416DSB-2LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DSB-2LR#B0 requirements.
6.How does Aetrix verify that R1RP0416DSB-2LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DSB-2LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DSB-2LR#B0 meets industry standards.
7.What is the process for return or replacement of R1RP0416DSB-2LR#B0?
All R1RP0416DSB-2LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DSB-2LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DSB-2LR#B0 part is unused and in its original packaging.
Return procedure for R1RP0416DSB-2LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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