My Inquiry
My Account
Renesas R1RP0416DSB-2LR#D0
- Part No.:
- R1RP0416DSB-2LR#D0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1RP0416DSB-2LR#D0.pdf
- Description:
- STANDARD SRAM, 256KX16, 12NS
- Quantity:
- Payment:
- Shipping:
Inventory:1,029
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1RP0416DSB-2LR#D0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0 V ±10% supply, with 12 ns maximum access time and TTL-compatible I/O. It serves as cache or buffer memory in embedded systems requiring wide data bus width and deterministic zero-clock-cycle read/write timing.
For engineers reviewing the R1RP0416DSB-2LR#D0 datasheet, R1RP0416DSB-2LR#D0 pinout, R1RP0416DSB-2LR#D0 application, or R1RP0416DSB-2LR#D0 equivalent, this page delivers verified package mapping (400-mil 44-pin TSOPII), byte-selectable 16-bit I/O architecture, low-power standby modes (5 mA max CMOS ISB1), retention capability down to 2.0 V, and direct TTL interface compatibility without level-shifting.
Technical Context
The R1RP0416DSB-2LR#D0 implements a fully static 6-transistor memory cell array with independent upper/lower byte control (UB#/LB#), enabling partial-word writes without read-modify-write cycles. Its center VCC/VSS pinout minimizes power distribution inductance across the 44-pin TSOPII footprint.
It supports three distinct operational modes: full 16-bit read/write, lower-byte-only (I/O1–I/O8), and upper-byte-only (I/O9–I/O16), all with identical 12 ns cycle time and sub-6 ns output enable delay (tOE ≤ 6 ns). Standby current drops to 1.0 mA max in L-version data retention mode at VCC ≥ 2.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - supports 16-bit microprocessor data buses without external multiplexing |
| Access time | 12 ns max - enables direct interfacing with 80 MHz bus clocks without wait states |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS system rails |
| Standby current | 5 mA max (CMOS ISB1) - enables low-power hold mode during CPU sleep without external power gating |
| Data retention voltage | 2.0 V min - maintains SRAM contents during brown-out or controlled power-down sequences |
| I/O compatibility | TTL-level inputs/outputs - eliminates need for level translators when connecting to 5 V logic families |
| Byte select | Independent UB#/LB# pins - allows atomic 8-bit updates to either half of the 16-bit word |
Pinout & Package
Package: 400-mil 44-pin plastic TSOP II (44P3W-H), surface-mount, gull-wing leads, 0.8 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing space |
| I/O1–I/O8 | Lower data I/O | Bi-directional 8-bit data path enabled only when LB# = L and CS# = L |
| I/O9–I/O16 | Upper data I/O | Bi-directional 8-bit data path enabled only when UB# = L and CS# = L |
| CS# | Chip select | Active-low global enable; places device in standby (high-Z I/O) when high |
| OE# | Output enable | Active-low read control; overrides WE# to force output state during read cycles |
| WE# | Write enable | Active-low write strobe; latches data on I/O pins when CS# and LB#/UB# are active |
| UB#, LB# | Byte select | Independent active-low controls for upper/lower 8-bit lanes; support partial writes |
| VCC, VSS | Power/Ground | Center-placed dual VCC/VSS pair reduces simultaneous switching noise and improves decoupling |
| NC | No connection | Pin 23 is unconnected; must remain floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-voltage regulators in legacy 5 V system designs |
| Equal access and cycle times | Guarantees predictable 12 ns timing for both reads and writes-no variable latency penalties |
| Direct TTL compatibility | Accepts standard TTL logic thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) without external biasing |
| Low-power data retention mode | Draws ≤1.0 mA at VCC = 2.0 V, enabling battery-backed hold for >100 hours |
| Center VCC/VSS pinout | Reduces power rail inductance and improves signal integrity on dense PCB layouts |
Applications
| Industrial PLC Data Buffer | Legacy Embedded Controller Cache |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory access prevents scan-time jitter. IC Role / Device Role / Timing Role: High-speed 16-bit buffer between FPGA-based I/O engine and ARM7/SH-2 host processor. Use Value: 12 ns access ensures sub-1 µs register update latency, meeting IEC 61131-3 cycle-time requirements for safety-rated motion control. |
Use Scenario: Instruction/data cache for Renesas SH-3 or SuperH-based industrial HMI units with limited board space. IC Role / Device Role / Timing Role: Zero-wait-state SRAM replacing slower Flash or DRAM in boot ROM shadowing and stack buffering. Use Value: Full 16-bit bus width and TTL compatibility eliminate glue logic, reducing BOM count and layout complexity. |
| Medical Diagnostic Imaging Buffer | Test Equipment Pattern Memory |
Use Scenario: Frame buffering in ultrasound beamformer modules requiring lossless real-time data capture at 40 MSPS. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via OE#/WE# separation) supporting concurrent acquisition and DMA transfer. Use Value: Byte-select capability enables efficient packing of 12-bit ADC samples into 16-bit words without software bit-shifting overhead. |
Use Scenario: Vector pattern storage in automated test equipment (ATE) for ASIC functional validation. IC Role / Device Role / Timing Role: High-reliability, non-refreshing memory storing stimulus/response vectors with guaranteed 12 ns timing repeatability. Use Value: 5 mA CMOS standby current enables long-duration pattern runs with minimal thermal drift in temperature-controlled test chambers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12T | 3.3 V supply only; 12 ns access; 44-pin TSOP II; no data retention below 3.0 V | Requires level translation in 5 V systems; unsuitable for brown-out retention use cases | Select only if migrating to 3.3 V system architecture and external level shifters are acceptable |
| AS6C4008-12ZIN | 5 V supply; 12 ns access; 44-pin SOJ (not TSOP II); higher ISB = 40 mA (vs. 5 mA) | Same voltage domain but incompatible footprint; lacks low-ISB1 retention mode | Choose only if SOJ socket compatibility is mandatory and standby power is not constrained |
Compared with R1RP0416DSB-2LR#D0, the IS61LV25616AL-12T requires system-level voltage redesign, while the AS6C4008-12ZIN demands PCB rework due to SOJ packaging and offers no sub-3 V data retention-making R1RP0416DSB-2LR#D0 uniquely suited for 5 V legacy systems needing ultra-low-power hold functionality.
Availability
R1RP0416DSB-2LR#D0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy embedded controller caching, medical diagnostic imaging buffering, test equipment pattern memory, and real-time communication protocol stacks requiring stable component supply over extended production lifecycles.
Supply support for R1RP0416DSB-2LR#D0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was designed specifically for high-speed, wide-bus-width buffer and cache applications in 5 V embedded systems where deterministic timing, TTL compatibility, and low-power data retention are critical-targeting industrial automation, medical instrumentation, and legacy communications equipment.
FAQ
What is the maximum access time specification for R1RP0416DSB-2LR#D0?
The R1RP0416DSB-2LR#D0 has a maximum access time of 12 ns under standard operating conditions (Ta = 0 to +70°C, VCC = 5.0 V ±10%). This value is guaranteed across the full commercial temperature range and applies to both read and write cycles, ensuring consistent timing behavior without wait-state insertion in 5 V system designs.
Does R1RP0416DSB-2LR#D0 support partial-word writes?
Yes, R1RP0416DSB-2LR#D0 supports partial-word writes via dedicated UB# (upper byte) and LB# (lower byte) control pins. When only one byte select is asserted low with CS# and WE# active, only the corresponding 8-bit lane (I/O1–I/O8 or I/O9–I/O16) is written-enabling atomic updates without read-modify-write overhead.
What is the minimum supply voltage required to retain data in R1RP0416DSB-2LR#D0?
The R1RP0416DSB-2LR#D0 guarantees data retention down to 2.0 V (VDR min), but only in its L-version configuration. At VCC = 2.0 V with CS# held within VCC − 0.2 V, the device draws ≤500 µA (ICCDR max), allowing extended hold time during controlled power-down or battery backup scenarios.
Is R1RP0416DSB-2LR#D0 pin-compatible with other devices in the R1RP0416D Series?
Yes, R1RP0416DSB-2LR#D0 shares identical pinout and electrical characteristics with all members of the R1RP0416D Series, including R1RP0416DGE-2PR and R1RP0416DSB-2PR. The suffix "-2LR" denotes the same 12 ns speed grade and TSOPII package as "-2PR", differing only in screening or marking-both use the 44-pin TSOPII (44P3W-H) footprint.
What package type is used for R1RP0416DSB-2LR#D0?
R1RP0416DSB-2LR#D0 is packaged in a 400-mil 44-pin plastic TSOP II (Thin Small Outline Package Type II), designated as 44P3W-H in Renesas documentation. This surface-mount package features gull-wing leads, 0.8 mm pitch, and center-placed VCC/VSS pins to optimize power integrity and thermal performance in high-density layouts.
R1RP0416DSB-2LR#D0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1RP0416DSB-2LR#D0 FAQ
1.How can I place an order for R1RP0416DSB-2LR#D0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DSB-2LR#D0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DSB-2LR#D0 reliable?
The price and inventory of R1RP0416DSB-2LR#D0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DSB-2LR#D0 is usually 5 days.
3.What payment methods are accepted for R1RP0416DSB-2LR#D0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DSB-2LR#D0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DSB-2LR#D0?
R1RP0416DSB-2LR#D0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DSB-2LR#D0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DSB-2LR#D0?
For technical support, including R1RP0416DSB-2LR#D0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DSB-2LR#D0 requirements.
6.How does Aetrix verify that R1RP0416DSB-2LR#D0 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DSB-2LR#D0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DSB-2LR#D0 meets industry standards.
7.What is the process for return or replacement of R1RP0416DSB-2LR#D0?
All R1RP0416DSB-2LR#D0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DSB-2LR#D0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DSB-2LR#D0 part is unused and in its original packaging.
Return procedure for R1RP0416DSB-2LR#D0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DSB-2LR#D0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
