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Renesas R1RP0416DSB-2LR#D1
- Part No.:
- R1RP0416DSB-2LR#D1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DSB-2LR#D1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,674
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Product details
Overview
R1RP0416DSB-2LR#D1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time, TTL-compatible I/O, and center VCC/VSS pinout. It serves as cache or buffer memory in high-performance embedded systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RP0416DSB-2LR#D1 datasheet, R1RP0416DSB-2LR#D1 pinout, R1RP0416DSB-2LR#D1 application, or R1RP0416DSB-2LR#D1 equivalent, key selection criteria include standby current (5mA max), byte-select capability (UB#/LB#), data retention at 2V, and TSOPII-44 package compatibility for space-constrained PCB layouts.
Technical Context
The R1RP0416DSB-2LR#D1 implements a fully static 6-transistor memory cell architecture with no clocks or refresh required. Its operation relies on asynchronous control signals - CS#, OE#, WE#, UB#, and LB# - enabling independent upper- and lower-byte read/write cycles without bus turnaround delay.
It supports three low-power states: active (160mA max ICC), TTL standby (40mA max ISB), and CMOS standby (5mA max ISB1), with guaranteed data retention down to 2.0V VCC in L-version configuration. All DC and AC parameters are specified over 0°C to +70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4 Mbit (256 kwords × 16 bits) - provides full 16-bit parallel data path for microprocessor or DSP interface |
| Access time | 12 ns (max) - enables direct interfacing with 80 MHz bus systems without wait states |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5V TTL logic families without level translation |
| Standby current | 5 mA (max, CMOS mode) - reduces system power during idle periods in battery-backed or portable applications |
| Data retention voltage | 2.0 V (min) - maintains stored data during brown-out or controlled power-down sequences |
| Operating temperature | 0°C to +70°C - qualified for commercial-grade industrial control and communications equipment |
| Package | 400-mil 44-pin plastic TSOPII - surface-mount footprint with 0.8 mm lead pitch, optimized for automated assembly |
Pinout & Package
The R1RP0416DSB-2LR#D1 is housed in a 44-pin plastic Thin Small Outline Package, Type II (TSOPII), 400-mil body width, with gull-wing leads and center VCC/VSS pin arrangement for reduced noise coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256k-word addressing; no address multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus; electrically isolated during high-Z states per control signal combination |
| CS# | Chip select | Active-low enable controlling device participation in bus cycles; must be stable before address setup |
| OE# | Output enable | Active-low gate for output drivers; allows read data to appear only when asserted with CS# and valid address |
| WE# | Write enable | Active-low write strobe; initiates write cycle when combined with CS# and byte-select signals |
| UB# / LB# | Upper/lower byte select | Independent 8-bit write masking; enables partial writes without external byte-enable logic |
| VCC / VSS | Power / ground | Center-placed dual VCC and dual VSS pins minimize IR drop and improve noise immunity across the array |
| NC | No connection | Unbonded pins; must remain unconnected and unstubbed on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no timing strobes required - simplifies controller design and eliminates dynamic power spikes |
| Byte-selectable I/O | UB# and LB# allow independent 8-bit read/write operations - reduces bus contention and supports mixed-width peripheral interfacing |
| TTL-compatible signaling | All inputs accept TTL voltage thresholds; outputs drive standard TTL loads - eliminates need for level-shifting buffers |
| Low-voltage data retention | Retains valid data at VCC ≥ 2.0 V in L-version - supports graceful shutdown and nonvolatile backup modes |
| Center VCC/VSS pinout | Dual VCC and dual VSS placed centrally reduce power distribution inductance - improves signal integrity for high-speed access |
Applications
| High-Speed Cache Memory | Real-Time Buffer in Industrial PLCs |
|---|---|
Use Scenario: CPU-side L2 cache in 8051 or SH-2 based controllers where deterministic latency is critical. IC Role / Device Role / Timing Role: High-bandwidth, low-latency 16-bit SRAM acting as transparent memory extension between processor and slower main memory. Use Value: 12ns access time eliminates wait states, enabling sustained 80 MHz bus throughput without performance penalty. | Use Scenario: Input/output data buffering in programmable logic controllers handling analog/digital I/O scanning at 10 kHz. IC Role / Device Role / Timing Role: Dual-port accessible buffer storing sensor acquisition snapshots and actuator command queues with atomic byte updates. Use Value: Independent UB#/LB# control allows concurrent update of status and control words without bus arbitration overhead. |
| Communications Protocol Stack Buffer | Embedded Graphics Frame Buffer |
Use Scenario: Packet reassembly buffer in Ethernet MAC layer firmware running on Renesas RX65N microcontrollers. IC Role / Device Role / Timing Role: Dedicated 4Mbit SRAM holding fragmented TCP/IP frames prior to checksum validation and forwarding. Use Value: 5mA CMOS standby current extends hold time during packet gaps while maintaining full 16-bit burst-read capability. | Use Scenario: Monochrome GUI frame buffer in medical display subsystems requiring flicker-free 60 Hz refresh. IC Role / Device Role / Timing Role: Pixel storage memory mapped directly to display controller's 16-bit parallel interface with no DMA overhead. Use Value: Center VCC/VSS layout minimizes switching noise on video data lines, preserving grayscale fidelity in EMI-sensitive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZSXI | 4 Mbit (256k × 16), 45 ns access, 3.3V supply, SOJ-44 package | Slower speed and different voltage domain require level shifters and timing margin adjustment | Select when 3.3V system integration and extended temperature range (−40°C to +85°C) are prioritized over speed |
| IS61LV25616AL-10TLI | 4 Mbit (256k × 16), 10 ns access, 3.3V supply, TSOP-II-44 package | Faster access but incompatible 3.3V I/O thresholds necessitate bus interface redesign | Select only if existing board supports 3.3V logic and timing budget permits tighter 10 ns cycle constraints |
Compared with CY62148EV30LL-45ZSXI and IS61LV25616AL-10TLI, the R1RP0416DSB-2LR#D1 uniquely delivers 12ns performance at 5V with byte-select capability and 2V data retention - making it optimal for legacy 5V industrial systems needing reliable low-power hold functionality without voltage translation.
Availability
R1RP0416DSB-2LR#D1 is available at Aetrix Electronics and suitable for high-speed cache memory, real-time industrial I/O buffering, and communications protocol stack applications requiring stable component supply and long-term manufacturability.
Supply support for R1RP0416DSB-2LR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The R1RP0416D Series was designed specifically for high-density, high-speed parallel memory applications in 5V embedded systems where deterministic timing, byte-select flexibility, and robust low-voltage data retention are essential.
FAQ
What is the maximum access time specification for R1RP0416DSB-2LR#D1?
The R1RP0416DSB-2LR#D1 has a maximum access time of 12 ns under standard operating conditions (VCC = 5.0 V ±10%, Ta = 0°C to +70°C). This value is measured from address stabilization to valid data output and is guaranteed across the full commercial temperature range. The "2" in the part number denotes the 12 ns speed grade, and the "LR" suffix identifies the L-version with enhanced low-power standby characteristics.
Does R1RP0416DSB-2LR#D1 support independent 8-bit read and write operations?
Yes, the R1RP0416DSB-2LR#D1 supports independent upper- and lower-byte operations via dedicated UB# (upper byte select) and LB# (lower byte select) control inputs. When LB# is asserted low and UB# is high, only I/O1–I/O8 are active; conversely, asserting UB# low and LB# high activates I/O9–I/O16. This enables true byte-masked writes without external logic, reducing bus contention in mixed-width systems.
What is the minimum supply voltage at which R1RP0416DSB-2LR#D1 retains stored data?
The R1RP0416DSB-2LR#D1 guarantees data retention down to 2.0 V VCC, as specified in the L-version low-VCC retention characteristics. This applies when CS# is held high (chip deselected) and input voltages meet defined thresholds (0 V ≤ VIN ≤ 0.2 V or VCC − 0.2 V ≤ VIN ≤ VCC). Retention current is limited to 500 µA maximum at 3 V, confirming robustness during brown-out conditions.
Which package type does R1RP0416DSB-2LR#D1 use, and what are its mechanical features?
The R1RP0416DSB-2LR#D1 uses a 400-mil 44-pin plastic Thin Small Outline Package, Type II (TSOPII), with gull-wing leads and 0.8 mm lead pitch. Its center VCC/VSS pin arrangement places two VCC and two VSS pins symmetrically near the package center to minimize power distribution inductance and improve noise immunity - a key advantage over edge-fed SOJ packages in high-speed designs.
How does the standby current of R1RP0416DSB-2LR#D1 compare between TTL and CMOS modes?
In TTL standby mode (ISB), the R1RP0416DSB-2LR#D1 draws up to 40 mA; in CMOS standby mode (ISB1), it draws only 5 mA maximum. The L-version designation confirms qualification for the lower ISB1 spec. This 8× reduction enables significant power savings during idle periods in always-on industrial equipment, especially when combined with controlled CS# assertion and proper input voltage clamping per datasheet conditions.
R1RP0416DSB-2LR#D1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RP0416DSB-2LR#D1 FAQ
1.How can I place an order for R1RP0416DSB-2LR#D1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DSB-2LR#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DSB-2LR#D1 reliable?
The price and inventory of R1RP0416DSB-2LR#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DSB-2LR#D1 is usually 5 days.
3.What payment methods are accepted for R1RP0416DSB-2LR#D1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DSB-2LR#D1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DSB-2LR#D1?
R1RP0416DSB-2LR#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DSB-2LR#D1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DSB-2LR#D1?
For technical support, including R1RP0416DSB-2LR#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DSB-2LR#D1 requirements.
6.How does Aetrix verify that R1RP0416DSB-2LR#D1 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DSB-2LR#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DSB-2LR#D1 meets industry standards.
7.What is the process for return or replacement of R1RP0416DSB-2LR#D1?
All R1RP0416DSB-2LR#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DSB-2LR#D1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DSB-2LR#D1 part is unused and in its original packaging.
Return procedure for R1RP0416DSB-2LR#D1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DSB-2LR#D1 Tags
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