Renesas R1RP0416DSB-2LR#S1

Overview

R1RP0416DSB-2LR#S1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time, TTL-compatible I/O, and center V_CC/V_SS pinout-designed for cache and buffer memory in high-speed embedded systems.

For engineers reviewing the R1RP0416DSB-2LR#S1 datasheet, R1RP0416DSB-2LR#S1 pinout, R1RP0416DSB-2LR#S1 application, or R1RP0416DSB-2LR#S1 equivalent, key selection criteria include L-version low-power standby (1.0mA max), data retention at 2.0V min, byte-select capability (UB#/LB#), and 44-pin TSOPII package compatibility with space-constrained industrial controllers.

Technical Context

This SRAM implements a fully static 6-transistor cell architecture with no clock or timing strobe required, enabling deterministic read/write timing across all modes. Its dual-byte select (UB#/LB#) supports independent 8-bit accesses within the 16-bit bus, and chip-select–driven output enable (OE#) ensures precise control over bus contention during multi-device operation.

The L-version variant guarantees reduced standby current (1.0mA max at f = 0MHz) and data retention current (500µA max at V_CC = 3V), while maintaining full 12ns cycle timing compliance under 0°C to +70°C ambient conditions and 5.0V ±10% supply regulation.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (thin shrink small outline package, Type II), lead pitch 0.8 mm, body width 10.16 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RP0416DSB-2LR#S1 uniquely delivers 5V compatibility, L-version 1.0 mA standby, and guaranteed 2.0 V data retention-making it optimal for industrial systems needing robustness across voltage transients without architecture change.

Availability

R1RP0416DSB-2LR#S1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller cache expansion, and medical imaging frame buffering requiring stable component supply and long-term lifecycle assurance.

Supply support for R1RP0416DSB-2LR#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1RP0416D Series was developed to deliver high-density, low-latency parallel SRAM for cost-sensitive industrial and embedded systems where 5V compatibility, byte-select flexibility, and power-aware retention are critical design requirements.

FAQ

What is the maximum access time specification for R1RP0416DSB-2LR#S1?

The R1RP0416DSB-2LR#S1 has a maximum access time of 12 ns, measured as address access time (t_AA) and chip select access time (t_ACS) under standard operating conditions (0°C to +70°C, V_CC = 5.0 V ±10%). This value is guaranteed for the L-version and applies to both read and write cycles, enabling direct connection to 80 MHz system clocks without wait-state insertion.

Does R1RP0416DSB-2LR#S1 support independent 8-bit data access?

Yes, the R1RP0416DSB-2LR#S1 supports independent 8-bit access via dedicated UB# (upper byte) and LB# (lower byte) control inputs. When LB# is asserted low, I/O1–I/O8 become active; when UB# is low, I/O9–I/O16 are enabled. Both can be asserted simultaneously for full 16-bit operation, and either can be held high to place its respective byte lane in high-impedance state-eliminating need for external byte masking logic.

What is the standby current for R1RP0416DSB-2LR#S1 in L-version configuration?

The R1RP0416DSB-2LR#S1 L-version guarantees a maximum standby current of 1.0 mA under zero-frequency conditions (f = 0 MHz), with V_CC ≥ CS# ≥ V_CC − 0.2 V and input voltages clamped to 0 V or V_CC − 0.2 V. This is significantly lower than the 40 mA max for standard versions and enables extended battery-backed operation in low-duty-cycle systems.

Can R1RP0416DSB-2LR#S1 retain data at reduced supply voltage?

Yes, the R1RP0416DSB-2LR#S1 L-version guarantees data retention down to 2.0 V minimum V_CC, with a maximum retention current of 500 µA at V_CC = 3 V. Retention mode requires CS# held high or within V_CC − 0.2 V, and all inputs biased to valid logic levels-enabling safe power-down sequencing and brown-out recovery without data loss.

What package type is used for R1RP0416DSB-2LR#S1?

The R1RP0416DSB-2LR#S1 uses a 400-mil 44-pin plastic TSOPII (Thin Shrink Small Outline Package, Type II) with 0.8 mm lead pitch and 10.16 mm body width. This surface-mount package features center-placed V_CC and V_SS pins for improved power integrity and is compatible with standard reflow soldering profiles for industrial PCB assembly.