Renesas R1RP0416DSB-2PR#B0

Overview

R1RP0416DSB-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0 V ±10% supply, with 12 ns maximum access time and TTL-compatible I/O. It serves as cache or buffer memory in embedded computing systems requiring wide data bus width and deterministic timing.

For engineers reviewing the R1RP0416DSB-2PR#B0 datasheet, R1RP0416DSB-2PR#B0 pinout, R1RP0416DSB-2PR#B0 application, or R1RP0416DSB-2PR#B0 equivalent, key selection criteria include byte-selectable 16-bit I/O architecture, 44-pin TSOPII package compatibility, low standby current (5 mA max), and guaranteed 12 ns read/write cycle performance under industrial temperature range (0°C to +70°C).

Technical Context

The R1RP0416DSB-2PR#B0 implements a fully static 6-transistor memory cell array with independent upper-byte (UB#) and lower-byte (LB#) write control, enabling partial-word writes without external logic. Its center VCC/VSS pinout minimizes power distribution inductance across the 44-pin TSOPII footprint.

It supports three concurrent enable schemes-chip select (CS#), output enable (OE#), and byte enables (UB#/LB#)-with overlapping timing windows validated for both WE#-controlled and CS#-controlled write cycles. All inputs and outputs meet TTL voltage thresholds, eliminating level-shifting requirements in legacy 5 V system designs.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (44P3W-H), surface-mount, gull-wing lead form with 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with R1RP0416DSB-2PR#B0, the IS61LV25616AL-12TQLI offers identical speed but mandates 3.3 V infrastructure changes, while the AS6C4008-12ZIN retains 5 V operation but demands mechanical and routing adaptation due to SOJ packaging and non-matching pin assignment.

Availability

R1RP0416DSB-2PR#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy embedded controller caching, communications protocol stack buffering, and test equipment pattern memory applications requiring stable component supply over extended production lifecycles.

Supply support for R1RP0416DSB-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial and embedded markets.

The R1RP0416D Series was designed specifically for high-speed, wide-bus memory applications in 5 V systems where deterministic timing, byte-selectable writes, and industrial temperature operation are mandatory-targeting cache, buffer, and real-time data acquisition roles.

FAQ

What is the maximum operating frequency supported by the R1RP0416DSB-2PR#B0?

The R1RP0416DSB-2PR#B0 guarantees a 12 ns maximum access time and equal 12 ns cycle time, supporting reliable operation up to 83.3 MHz in read/write-critical paths. This specification is validated across the full industrial temperature range (0°C to +70°C) and 5.0 V ±10% supply, with timing margins defined in the AC Characteristics table of the official Renesas datasheet Rev. 1.00.

Does the R1RP0416DSB-2PR#B0 support partial-word writes without external logic?

Yes, the R1RP0416DSB-2PR#B0 supports true partial-word writes via dedicated UB# (upper byte) and LB# (lower byte) control pins. When CS# and WE# are asserted, asserting only LB# enables writing to I/O1–I/O8, while asserting only UB# enables writing to I/O9–I/O16-no external gating or bus transceivers are required, as confirmed in the Operation Table and Pin Description sections of the R1RP0416D Series datasheet.

What is the pin-compatible replacement option for the R1RP0416DSB-2PR#B0 in 44-pin TSOPII packaging?

There is no documented pin-compatible replacement for the R1RP0416DSB-2PR#B0 in identical 44-pin TSOPII packaging with matching pinout and 5 V operation. The IS61LV25616AL-12TQLI shares the same footprint but requires 3.3 V supply and exhibits different DC/AC behavior; the AS6C4008-12ZIN uses 5 V but is offered only in 44-pin SOJ with incompatible pin mapping. Therefore, R1RP0416DSB-2PR#B0 remains unique in its combination of 5 V, 12 ns, TSOPII, and byte-select architecture.

Can the R1RP0416DSB-2PR#B0 retain data during brown-out conditions?

Yes, the R1RP0416DSB-2PR#B0 supports data retention down to 2.0 V VCC (per Low VCC Data Retention Characteristics section), with maximum retention current of 500 µA at 3 V. This enables reliable hold-mode operation during controlled power-down or transient brown-outs, provided CS# remains asserted (≥ VCC − 0.2 V) and input voltages stay within specified undershoot/overshoot limits (≤6 ns pulse width).

Is the R1RP0416DSB-2PR#B0 compliant with RoHS and lead-free assembly requirements?

While the original 2004 datasheet does not explicitly declare RoHS status, Renesas Electronics confirms RoHS compliance for the R1RP0416D Series in subsequent product change notices and material declarations. The R1RP0416DSB-2PR#B0 is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU, supporting standard Pb-free reflow profiles (JEDEC J-STD-020) without requiring special handling or exemptions.