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Renesas R1RP0416DSB-2PR#D1
- Part No.:
- R1RP0416DSB-2PR#D1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DSB-2PR#D1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:135
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Product details
Overview
R1RP0416DSB-2PR#D1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time and TTL-compatible I/O. It features center VCC/VSS pinout, byte-selectable read/write, and is designed for cache and buffer memory in high-performance computing and embedded systems.
For engineers reviewing the R1RP0416DSB-2PR#D1 datasheet, R1RP0416DSB-2PR#D1 pinout, R1RP0416DSB-2PR#D1 application, or R1RP0416DSB-2PR#D1 equivalent, key selection criteria include 12ns cycle timing, 44-pin TSOPII package compatibility, low-power standby modes (5mA CMOS), and byte-level write control via UB#/LB# signals.
Technical Context
This SRAM uses a 6-transistor memory cell architecture and high-speed circuit design to achieve deterministic 12ns access and cycle times without clocks or strobes. Its fully static operation enables seamless integration into synchronous and asynchronous bus interfaces.
The device supports independent upper- and lower-byte write enable via UB# and LB#, with simultaneous high-impedance control during chip deselect or output disable. All inputs and outputs meet TTL voltage thresholds, ensuring direct interfacing with legacy logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4 Mbit (256 kwords × 16 bits) - provides wide-data-path storage for burst-mode CPU caches and video frame buffers |
| Access time | 12 ns (max) - guarantees deterministic read latency under worst-case industrial temperature (0°C to +70°C) |
| Supply voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails without regulation overhead |
| Operating current | 160 mA (max) - defines peak power draw during active read/write cycles at 12ns timing |
| CMOS standby current | 5 mA (max) - enables low-power hold mode while preserving data integrity during system sleep |
| Data retention voltage | 2.0 V (min) - allows memory state preservation during brown-out or controlled power-down sequences |
| Package | 400-mil 44-pin plastic TSOPII - surface-mount footprint optimized for high-density PCB layouts with thermal relief |
Pinout & Package
Package: 400-mil 44-pin plastic Thin Small Outline Package, Type II (TSOPII), center VCC/VSS configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no external address latching required |
| I/O1–I/O16 | Data input/output | Bidirectional 16-bit data bus; high-impedance tri-state during CS# high or OE# high |
| CS# | Chip select | Active-low enable controlling device participation in bus transactions; drives standby current when high |
| OE# | Output enable | Active-low signal gating output drivers; allows shared bus operation without byte-select dependency |
| WE# | Write enable | Active-low control initiating write cycles; must be synchronized with CS# and byte-select signals |
| UB# / LB# | Upper/lower byte select | Independent active-low controls enabling 8-bit granularity writes to I/O9–I/O16 or I/O1–I/O8 |
| VCC | Power supply | Primary 5V supply pin; center-positioned for balanced power distribution across die |
| VSS | Ground | Reference ground pin; center-positioned adjacent to VCC for minimized supply loop inductance |
| NC | No connection | Unbonded pin; must remain unconnected per design - no internal function or test access |
Key Features
| Feature | Design Value |
|---|---|
| Single 5V supply operation | Eliminates dual-rail power design complexity and reduces BOM count in legacy 5V systems |
| Byte-selectable write capability | Enables efficient partial-word updates without read-modify-write cycles, reducing bus traffic and latency |
| TTL-compatible I/O levels | Direct interface with 74LS/74HC logic and microcontrollers without level-shifting components |
| Equal access and cycle times | Simplifies timing budget allocation in synchronous bus designs - no separate setup/hold margining needed |
| Center VCC/VSS pinout | Improves power delivery symmetry and reduces ground bounce in high-speed parallel bus environments |
Applications
| High-Speed Cache Memory | Real-Time Data Buffering |
|---|---|
|
Use Scenario: L2 cache for 16-bit microprocessors in industrial PLCs requiring deterministic 12ns latency. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory buffer between CPU core and slower main memory or peripherals. Use Value: Enables zero-wait-state execution for critical control loops by delivering 16-bit words within 12ns of address assertion. |
Use Scenario: Frame buffer in medical imaging subsystems capturing 16-bit grayscale sensor data at 60+ fps. IC Role / Device Role / Timing Role: Dual-port-capable temporary storage for pixel streams before compression or display processing. Use Value: Supports concurrent write (from sensor interface) and read (to display controller) via independent byte enables and tristate control. |
| Legacy Bus Interface Adapter | Embedded Network Protocol Stack Buffer |
|
Use Scenario: Memory expansion for ISA-bus-based test equipment using 16-bit data transfers. IC Role / Device Role / Timing Role: Drop-in replacement for older SRAMs on 5V backplanes with strict 12ns timing compliance. Use Value: Matches TTL timing margins and pinout conventions, avoiding redesign of address/data bus termination networks. |
Use Scenario: Packet buffering in CAN-to-Ethernet gateway modules handling segmented protocol payloads. IC Role / Device Role / Timing Role: Temporary storage for fragmented Ethernet frames prior to reassembly and forwarding. Use Value: Byte-select functionality allows efficient handling of variable-length packets without full-word overwrites or alignment padding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4-Mbit (256k×16), 45ns access, 3.3V supply, 54-pin TSOP | Slower timing, lower voltage, larger package - unsuitable for 12ns 5V bus timing closure | Select only if system operates at ≤22 MHz and uses 3.3V logic; requires PCB layout change |
| IS61LV25616AL-10TLI | 4-Mbit (256k×16), 10ns access, 3.3V supply, 44-pin TSOP-II | Faster access but incompatible 3.3V I/O - mandates level shifters for 5V host interfaces | Choose for new 3.3V designs needing tighter timing; not drop-in for existing 5V R1RP0416DSB-2PR#D1 systems |
Compared with CY62167EV30LL-45ZSXI and IS61LV25616AL-10TLI, the R1RP0416DSB-2PR#D1 uniquely satisfies 12ns 5V TTL timing in a 44-pin TSOPII footprint - making it the only option for legacy 5V systems requiring minimal layout change and guaranteed industrial temperature operation.
Availability
R1RP0416DSB-2PR#D1 is available at Aetrix Electronics and suitable for high-speed cache memory, real-time data buffering, and legacy bus interface adapter applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for R1RP0416DSB-2PR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was developed specifically for high-density, high-speed parallel memory applications in 5V industrial systems - emphasizing timing determinism, TTL compatibility, and robust data retention under brown-out conditions.
FAQ
What is the maximum operating temperature range for R1RP0416DSB-2PR#D1?
The R1RP0416DSB-2PR#D1 is rated for industrial operation from 0°C to +70°C ambient temperature. This range is validated per the Absolute Maximum Ratings table and confirmed in all DC and AC characterization conditions in the R10DS0284EJ0100 datasheet. Operation outside this range may compromise timing compliance or data retention reliability.
Does R1RP0416DSB-2PR#D1 support true static operation without clocks or refresh cycles?
Yes, the R1RP0416DSB-2PR#D1 is a fully static RAM - it requires no clocks, timing strobes, or periodic refresh. Data remains valid indefinitely as long as VCC is maintained above 2.0V and CS# is held high in standby mode. This eliminates timing controller overhead in simple microprocessor or FPGA-based systems.
What is the significance of the "2PR" suffix in R1RP0416DSB-2PR#D1?
The "2PR" suffix denotes the 12ns access time version (2 = 12ns), Normal power version (P), and plastic TSOPII package (R). This matches the ordering code structure defined in the Datasheet's Ordering Information table, distinguishing it from L-version (low-power) or S-version (ultra-low-power) variants.
Can R1RP0416DSB-2PR#D1 operate reliably at 4.5V supply voltage?
Yes - the R1RP0416DSB-2PR#D1 is specified for 4.5V to 5.5V operation per Recommended DC Operating Conditions. At 4.5V, all AC parameters including 12ns access time and 12ns cycle time remain guaranteed, and DC characteristics such as output drive strength (VOL ≤ 0.4V at 8mA) are maintained.
How does the center VCC/VSS pinout affect PCB layout for R1RP0416DSB-2PR#D1?
The center VCC/VSS pinout in the 44-pin TSOPII package reduces power/ground loop inductance and improves noise immunity on high-speed parallel buses. Layout best practices require symmetric decoupling capacitors (0.1µF ceramic) placed adjacent to each VCC–VSS pair, with short, low-inductance traces to minimize simultaneous switching noise during 16-bit transitions.
R1RP0416DSB-2PR#D1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RP0416DSB-2PR#D1 FAQ
1.How can I place an order for R1RP0416DSB-2PR#D1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DSB-2PR#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DSB-2PR#D1 reliable?
The price and inventory of R1RP0416DSB-2PR#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DSB-2PR#D1 is usually 5 days.
3.What payment methods are accepted for R1RP0416DSB-2PR#D1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DSB-2PR#D1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DSB-2PR#D1?
R1RP0416DSB-2PR#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DSB-2PR#D1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DSB-2PR#D1?
For technical support, including R1RP0416DSB-2PR#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DSB-2PR#D1 requirements.
6.How does Aetrix verify that R1RP0416DSB-2PR#D1 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DSB-2PR#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DSB-2PR#D1 meets industry standards.
7.What is the process for return or replacement of R1RP0416DSB-2PR#D1?
All R1RP0416DSB-2PR#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DSB-2PR#D1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DSB-2PR#D1 part is unused and in its original packaging.
Return procedure for R1RP0416DSB-2PR#D1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DSB-2PR#D1 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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