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Renesas R1RP0416DSB-2PR#S1
- Part No.:
- R1RP0416DSB-2PR#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RP0416DSB-2PR#S1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,870
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Product details
Overview
R1RP0416DSB-2PR#S1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time and 400-mil 44-pin plastic TSOPII package. It delivers TTL-compatible I/O, equal access/cycle times, and supports byte-selectable read/write operations for cache and buffer memory in embedded computing systems.
For engineers reviewing the R1RP0416DSB-2PR#S1 datasheet, R1RP0416DSB-2PR#S1 pinout, R1RP0416DSB-2PR#S1 application, or R1RP0416DSB-2PR#S1 equivalent, this page provides verified specifications, pin-level circuit roles, real-world use scenarios, and validated alternative parts for system-level memory design and BOM optimization.
Technical Context
This SRAM uses a 6-transistor memory cell architecture and high-speed CMOS circuit design to achieve deterministic 12ns access without clocks or timing strobes. Its center VCC/VSS pinout enables balanced power distribution, and dual-byte select (UB#/LB#) allows independent 8-bit data path control within the 16-bit bus.
The device supports three standby modes: TTL-level (40mA), CMOS-level (5mA), and low-power L/S versions (1.0mA/0.5mA). Data retention is guaranteed down to 2.0V with ≤500µA current draw in S-version, enabling low-voltage hold functionality during system sleep states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256-kword × 16-bit) - supports 32KB of wide-data buffer storage |
| Access time | 12 ns (max) - enables direct interface with 80 MHz bus systems |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5V TTL logic domains |
| Operating current | 160 mA (max) - defines thermal budget for dense memory arrays |
| Standby current | 5 mA (CMOS mode) - reduces idle power in always-on subsystems |
| Data retention voltage | 2.0 V (min) - maintains memory state during brown-out or controlled power-down |
| I/O compatibility | TTL input/output levels - eliminates level-shifting requirements on 5V buses |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (Thin Small Outline Package, Type II), surface-mount, lead-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding |
| I/O1–I/O16 | Data input/output | 16-bit bidirectional data bus with byte-select isolation |
| CS# | Chip select | Active-low enable controlling device activation and output-Z state |
| OE# | Output enable | Active-low control for read data gating; overrides CS# for output timing |
| WE# | Write enable | Active-low signal initiating write cycle; coordinates with LB#/UB# for byte writes |
| UB#, LB# | Upper/lower byte select | Independent 8-bit write masking; enables partial-word updates without read-modify-write |
| VCC, VSS | Power supply / Ground | Center-placed pins minimize IR drop and improve noise immunity across 44-pin layout |
| NC | No connection | Unbonded pin; must remain unconnected per Renesas design rules |
Key Features
| Feature | Design Value |
|---|---|
| Static operation | No clock or refresh required - simplifies timing-critical control logic and reduces FPGA resource usage |
| Byte-selectable I/O | Independent UB#/LB# control enables 8-bit sub-word writes - avoids bus contention and improves burst efficiency |
| Multiple standby modes | 5mA CMOS standby and 0.5mA S-version retention - supports hierarchical power management in portable systems |
| Direct TTL compatibility | All inputs and outputs meet TTL voltage thresholds - eliminates external level shifters in mixed-logic designs |
| Equal access/cycle timing | tRC = tAA = 12ns - enables predictable pipeline scheduling and eliminates wait-state insertion |
Applications
| High-Speed Cache Memory | Real-Time Data Buffering |
|---|---|
Use Scenario: CPU-side L2 cache in industrial motion controllers requiring deterministic 12ns latency. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as write-through cache between ARM Cortex-R core and FPGA-based servo interface. Use Value: Eliminates DRAM refresh overhead and guarantees worst-case 12ns access for jitter-sensitive position-loop calculations. | Use Scenario: Streaming sensor fusion buffer in automotive ADAS domain controller aggregating radar, camera, and IMU data. IC Role / Device Role / Timing Role: 16-bit parallel FIFO buffer synchronizing heterogeneous sensor data rates before DSP preprocessing. Use Value: Byte-select capability allows partial updates from 8-bit SPI sensors while preserving 16-bit alignment for vectorized processing. |
| Embedded Network Packet Buffer | Industrial PLC I/O Mapping Memory |
Use Scenario: Layer-2 switch ASIC packet buffering where line-rate forwarding demands zero-wait-state memory access. IC Role / Device Role / Timing Role: Dual-ported SRAM replacement used as ingress/egress descriptor table with concurrent read/write via separate byte lanes. Use Value: 12ns cycle time matches 83 MHz Ethernet MAC timing; UB#/LB# enables parallel header/payload writes. | Use Scenario: Deterministic I/O image memory in safety-rated PLC backplane modules handling 256 discrete digital inputs/outputs. IC Role / Device Role / Timing Role: Non-refreshing memory storing real-time I/O status mirrored by microcontroller and FPGA safety monitor. Use Value: 2.0V data retention ensures state persistence during 100ms power-fail hold-up using supercapacitor backup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TLI | 12ns access, 3.3V supply only; no 5V tolerance | Requires level-shifting in 5V systems; lower standby current (1µA) | Select when migrating to 3.3V-only designs with tighter power budgets |
| AS6C4008-12ZIN | 12ns access, 5V supply, but 28-pin SOJ package (vs. 44-pin TSOPII) | Smaller footprint but incompatible pinout; lacks byte-select control signals | Choose for space-constrained boards where byte masking is unnecessary |
Compared with IS61LV25616AL-12TLI and AS6C4008-12ZIN, the R1RP0416DSB-2PR#S1 uniquely supports 5V TTL compatibility, center VCC/VSS pinout for noise reduction, and hardware byte-select-making it optimal for legacy industrial systems requiring drop-in 5V SRAM upgrades without redesign.
Availability
R1RP0416DSB-2PR#S1 is available at Aetrix Electronics and suitable for high-speed cache memory, real-time data buffering, and industrial PLC I/O mapping requiring stable component supply and long-term lifecycle support.
Supply support for R1RP0416DSB-2PR#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The R1RP0416D Series was designed specifically for high-density, low-latency parallel memory applications in industrial control, networking infrastructure, and embedded computing where 5V compatibility and deterministic timing are mandatory.
FAQ
What is the maximum operating temperature range for the R1RP0416DSB-2PR#S1?
The R1RP0416DSB-2PR#S1 is rated for operation from 0°C to +70°C ambient temperature, as specified in its Absolute Maximum Ratings table. This commercial-grade temperature range aligns with standard industrial board-level environments where airflow and heatsinking are controlled. The device's 160mA max operating current and 5mA CMOS standby current are characterized across this full range, ensuring timing and leakage parameters remain within datasheet limits without derating.
Does the R1RP0416DSB-2PR#S1 support true 16-bit simultaneous read/write operations?
No, the R1RP0416DSB-2PR#S1 does not perform simultaneous 16-bit read and write. It operates in strict read-or-write mode per cycle, controlled by WE#. However, it supports true 16-bit parallel data transfer during each valid cycle - either all 16 bits read out or all 16 bits written in - and allows byte-granular writes via UB#/LB# without requiring read-modify-write sequences.
Can the R1RP0416DSB-2PR#S1 be used with a 3.3V microcontroller interface?
The R1RP0416DSB-2PR#S1 requires a 5.0V ±10% supply and is TTL-compatible, meaning its inputs accept 3.3V logic-high signals (VIH min = 2.2V), but its outputs drive 5V levels (VOH min = 2.4V at −4mA). Direct connection to a 3.3V-only microcontroller risks overvoltage damage to inputs unless level translation or series resistors are used. For native 3.3V interfacing, consider Renesas' 3.3V SRAM families instead.
What is the significance of "center VCC and VSS type pin out" for the R1RP0416DSB-2PR#S1?
The center VCC and VSS pinout places power and ground pins symmetrically near the middle of the 44-pin TSOPII package. This layout minimizes power delivery loop inductance, reduces simultaneous switching noise, and improves signal integrity on adjacent I/O lines - especially critical for 12ns timing margins. It also simplifies PCB decoupling capacitor placement directly beneath the package center, enhancing high-frequency transient response.
How does the R1RP0416DSB-2PR#S1 handle data retention during power loss?
The R1RP0416DSB-2PR#S1 maintains stored data down to 2.0V VCC with ≤200µA current draw (S-version), as confirmed in the Low VCC Data Retention Characteristics table. When CS# remains asserted and address/data lines are held stable, the device enters retention mode automatically - no additional control signals required. Recovery to full operation takes ≤5ms after VCC rises above 4.5V, enabling seamless resume in battery-backed or supercapacitor-assisted systems.
R1RP0416DSB-2PR#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RP0416DSB-2PR#S1 FAQ
1.How can I place an order for R1RP0416DSB-2PR#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RP0416DSB-2PR#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RP0416DSB-2PR#S1 reliable?
The price and inventory of R1RP0416DSB-2PR#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RP0416DSB-2PR#S1 is usually 5 days.
3.What payment methods are accepted for R1RP0416DSB-2PR#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RP0416DSB-2PR#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RP0416DSB-2PR#S1?
R1RP0416DSB-2PR#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RP0416DSB-2PR#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RP0416DSB-2PR#S1?
For technical support, including R1RP0416DSB-2PR#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RP0416DSB-2PR#S1 requirements.
6.How does Aetrix verify that R1RP0416DSB-2PR#S1 is sourced from the original manufacturer or authorized distributors?
All R1RP0416DSB-2PR#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RP0416DSB-2PR#S1 meets industry standards.
7.What is the process for return or replacement of R1RP0416DSB-2PR#S1?
All R1RP0416DSB-2PR#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RP0416DSB-2PR#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RP0416DSB-2PR#S1 part is unused and in its original packaging.
Return procedure for R1RP0416DSB-2PR#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RP0416DSB-2PR#S1 Tags
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AT24C02C-XHM-T
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