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Renesas R1RW0404DGE-2LR#B0
- Part No.:
- R1RW0404DGE-2LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1RW0404DGE-2LR#B0.pdf
- Description:
- 4M HIGH SPEED SRAM (1M X 4-BIT)
- Quantity:
- Payment:
- Shipping:
Inventory:1,430
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Product details
Overview
R1RW0404DGE-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, designed for cache and buffer memory in embedded systems requiring fast, wide-bit-width data access. It operates from a single 5.0 V ±10% supply, delivers 12 ns maximum access time, supports TTL-compatible I/O, and features byte-selectable upper/lower write control via UB#/LB# pins.
For engineers reviewing the R1RW0404DGE-2LR#B0 datasheet, R1RW0404DGE-2LR#B0 pinout, R1RW0404DGE-2LR#B0 application, or R1RW0404DGE-2LR#B0 equivalent, this device serves as a drop-in replacement for legacy 44-pin SOJ SRAMs in industrial control, test equipment, and communications infrastructure where deterministic timing and low standby current (5 mA max in L-version) are critical.
Technical Context
This SRAM uses a CMOS 6-transistor memory cell architecture and high-speed circuit design to achieve uniform 12 ns access and cycle times without clocks or strobes. Its center VCC/VSS pinout and fully static operation eliminate refresh overhead and simplify timing-critical designs.
The device implements independent upper-byte (I/O9–I/O16) and lower-byte (I/O1–I/O8) control via UB# and LB# inputs, enabling partial writes without bus contention. All inputs and outputs are directly TTL-compatible, supporting seamless integration with legacy microprocessor buses operating at 5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - provides full 16-bit parallel data path for efficient CPU/cache interfacing |
| Access time | 12 ns (max) - enables direct connection to 80 MHz bus cycles without wait states |
| Supply voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no auxiliary supplies required |
| Standby current | 5 mA (max, L-version) - supports low-power hold mode during system sleep without data loss |
| Data retention voltage | 2.0 V (min, L-version) - maintains stored data down to brown-out conditions while minimizing leakage |
| Operating temperature | 0°C to +70°C - qualified for commercial/industrial ambient environments per Renesas Standard grade |
| Package | 400-mil 44-pin plastic SOJ (44P0K) - surface-mount compatible with standard reflow profiles and legacy board layouts |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (44P0K), center VCC/VSS configuration, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing; no multiplexing required |
| I/O1–I/O8 | Lower data I/O | 8-bit bidirectional data path active when LB# = low; high-impedance otherwise |
| I/O9–I/O16 | Upper data I/O | 8-bit bidirectional data path active when UB# = low; high-impedance otherwise |
| CS# | Chip select | Active-low enable controlling all internal operations; must be stable before address setup |
| OE# | Output enable | Active-low control for output drivers only; does not affect write or standby states |
| WE# | Write enable | Active-low signal initiating write cycles; combined with CS#, LB#, and UB# to define byte-write boundaries |
| VCC / VSS | Power / Ground | Center-placed dual VCC and dual VSS pins reduce power distribution inductance and improve noise immunity |
| NC | No connection | Pin 23 is unconnected; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates need for dual-voltage regulators or level shifters in 5 V system designs |
| Byte-selectable write control | UB#/LB# pins allow independent 8-bit writes without masking logic or external latches |
| TTL-compatible I/O | Direct interface with 5 V microcontrollers, FPGAs, and ASICs without translation circuitry |
| Low data retention current | 0.5 mA (max, L-version) at 2 V VCC enables extended battery-backed operation |
| Equal access and cycle times | 12 ns tRC and tAA simplifies timing budgeting and removes read/write asymmetry penalties |
Applications
| Industrial PLC Memory Buffer | Test Equipment Data Capture |
|---|---|
|
Use Scenario: Real-time data logging in programmable logic controllers during high-speed I/O scanning cycles. IC Role / Device Role / Timing Role: High-bandwidth buffer between fieldbus interface and CPU, absorbing bursty sensor data with zero wait-state reads/writes. Use Value: 12 ns access ensures sub-100 ns round-trip latency for 16-bit register updates, maintaining deterministic scan timing under full load. |
Use Scenario: Capturing high-speed analog-to-digital samples in automated test equipment with parallel bus interfaces. IC Role / Device Role / Timing Role: First-stage FIFO buffer accepting digitized waveforms at up to 80 MB/s sustained throughput. Use Value: Byte-select capability allows selective overwrite of invalid sample blocks without disturbing adjacent valid data in the same word. |
| Communications Protocol Stack Cache | Legacy Embedded System Upgrade |
|
Use Scenario: Storing packet headers and temporary session state in network interface cards implementing TCP/IP offload. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for protocol engine microcode, accessed concurrently by multiple hardware accelerators. Use Value: Center VCC/VSS pinout minimizes ground bounce during simultaneous multi-byte reads, preserving signal integrity on shared data buses. |
Use Scenario: Replacing obsolete SRAMs in aging medical imaging subsystems where PCB redesign is prohibited. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for existing 44-pin SOJ SRAMs with identical footprint and timing behavior. Use Value: Guaranteed 12 ns max access time and TTL I/O compatibility ensure functional equivalence without firmware or timing adjustments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 3.3 V supply only; 12 ns access; 44-pin TSOP-II package (not SOJ) | Requires level-shifting in 5 V systems; different thermal profile and solder reflow requirements | Select only if migrating to 3.3 V architecture and redesigning PCB layout for TSOP-II footprint |
| CY62167EV30LL-45ZSXI | 3.3 V supply; 45 ns access; 48-pin TSOP-I; higher standby current (25 mA) | Slower timing precludes use in 80 MHz bus systems; larger package increases board area | Consider only for cost-sensitive, non-timing-critical upgrades where 5 V compatibility is not required |
Compared with R1RW0404DGE-2LR#B0, the IS61LV25616AL-12TQLI offers identical speed but mandates 3.3 V infrastructure changes, while the CY62167EV30LL-45ZSXI trades performance for cost and voltage flexibility-neither matches the R1RW0404DGE-2LR#B0's combination of 5 V operation, 12 ns timing, and SOJ pinout in a single package.
Availability
R1RW0404DGE-2LR#B0 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, test equipment data capture, and communications protocol stack caches requiring stable component supply across long-lifecycle production programs.
Supply support for R1RW0404DGE-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series-including R1RW0404DGE-2LR#B0-is designed specifically for high-speed, wide-bit-width buffer and cache applications in commercial and industrial systems where reliability, timing determinism, and 5 V compatibility are essential.
FAQ
What is the maximum operating frequency supported by the R1RW0404DGE-2LR#B0?
The R1RW0404DGE-2LR#B0 does not operate on a clock signal-it is a fully static RAM. Its 12 ns maximum access time supports bus frequencies up to approximately 80 MHz in systems where address and control setup/hold times are met. The R1RW0404DGE-2LR#B0 achieves this without internal clocks or refresh cycles, making it suitable for asynchronous microprocessor interfaces.
Does the R1RW0404DGE-2LR#B0 support partial-word writes?
Yes, the R1RW0404DGE-2LR#B0 supports true partial-word writes using its dedicated UB# (upper byte) and LB# (lower byte) control inputs. When only LB# is asserted low with WE# and CS# active, only I/O1–I/O8 are written; asserting only UB# writes I/O9–I/O16. This eliminates the need for external byte-mask logic in 16-bit systems.
What is the data retention capability of the R1RW0404DGE-2LR#B0 at reduced supply voltage?
The R1RW0404DGE-2LR#B0 (L-version) guarantees data retention down to 2.0 V VCC with a maximum current draw of 500 µA. This low-voltage hold mode allows the R1RW0404DGE-2LR#B0 to preserve memory contents during brown-out events or battery backup scenarios without external supervision circuitry.
Is the R1RW0404DGE-2LR#B0 pin-compatible with other members of the R1RP0416D Series?
Yes, the R1RW0404DGE-2LR#B0 shares identical 44-pin SOJ pinout, signal definitions, and DC/AC electrical characteristics with all R1RP0416D Series variants including R1RP0416DGE-2PR and R1RP0416DSB-2LR. Differences are limited to access time grading (all -2x suffix = 12 ns) and package type-SOJ vs. TSOPII-so R1RW0404DGE-2LR#B0 can replace any -2LR/-2PR SOJ variant without layout change.
What are the thermal and reliability qualifications for the R1RW0404DGE-2LR#B0?
The R1RW0404DGE-2LR#B0 is rated for 0°C to +70°C operating temperature and classified as Renesas "Standard" quality grade-qualified for computers, office equipment, communications gear, test instruments, and industrial robots. It meets JEDEC JESD22-A108 reliability standards for storage life and is RoHS-compliant per Renesas documentation.
R1RW0404DGE-2LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1RW0404DGE-2LR#B0 FAQ
1.How can I place an order for R1RW0404DGE-2LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0404DGE-2LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0404DGE-2LR#B0 reliable?
The price and inventory of R1RW0404DGE-2LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0404DGE-2LR#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0404DGE-2LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0404DGE-2LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0404DGE-2LR#B0?
R1RW0404DGE-2LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0404DGE-2LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0404DGE-2LR#B0?
For technical support, including R1RW0404DGE-2LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0404DGE-2LR#B0 requirements.
6.How does Aetrix verify that R1RW0404DGE-2LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0404DGE-2LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0404DGE-2LR#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0404DGE-2LR#B0?
All R1RW0404DGE-2LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0404DGE-2LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0404DGE-2LR#B0 part is unused and in its original packaging.
Return procedure for R1RW0404DGE-2LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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