Renesas R1RW0408DGE-2LR#B0

Overview

R1RW0408DGE-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating at 3.3 V ± 0.3 V with 12 ns max access time and packaged in 400-mil 36-pin SOJ. It delivers TTL-compatible I/O, fully static operation (no clock required), and low standby current (0.8 mA max for L-version), making it suitable for cache and buffer memory in embedded computing and industrial control systems.

For engineers reviewing the R1RW0408DGE-2LR#B0 datasheet, R1RW0408DGE-2LR#B0 pinout, R1RW0408DGE-2LR#B0 application, or R1RW0408DGE-2LR#B0 equivalent, key selection criteria include 12 ns read/write cycle timing, dual standby current modes (TTL/CMOS), data retention down to 2.0 V, center VCC/VSS pinout, and compatibility with high-density surface-mount system designs requiring reliable 8-bit parallel SRAM.

Technical Context

This SRAM uses a 6-transistor CMOS memory cell architecture and high-speed circuit design to achieve 12 ns access while maintaining full static operation-no clocks, no refresh, and equal access/cycle times. Its control logic supports three-state outputs via independent CS#, OE#, and WE# signals, enabling direct interface with TTL-level microcontrollers and bus controllers.

The device implements a 1024-row × 32-column × 16-block × 8-bit memory array (4,194,304 bits total) with center VCC/VSS pin arrangement for reduced noise coupling. It guarantees data retention at VCC ≥ 2.0 V with ≤ 400 µA current draw under bias, specifically validated for the L-version denoted by the "-2LR" suffix.

Key Specifications

Pinout & Package

Package: 400-mil 36-pin plastic SOJ (36P0K), surface-mount, gull-wing leads, center power/ground pin arrangement (VCC and VSS pins at positions 9, 10, 28, 29).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with R1RW0408DGE-2LR#B0, the Infineon part trades speed for voltage flexibility and the ISSI part offers identical timing but demands PCB layout changes and lacks guaranteed 2.0 V data retention-making R1RW0408DGE-2LR#B0 uniquely suited for space-constrained, low-voltage-hold applications.

Availability

R1RW0408DGE-2LR#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, networking packet buffering, and test equipment pattern memory requiring stable component supply and long-term obsolescence management.

Supply support for R1RW0408DGE-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The R1RW0408D Series was designed as a high-speed, low-power parallel SRAM family targeting cache and buffer roles in resource-constrained embedded systems where deterministic timing and board-space efficiency are critical.

FAQ

What is the guaranteed data retention voltage for R1RW0408DGE-2LR#B0?

The R1RW0408DGE-2LR#B0 is an L-version device with guaranteed data retention down to 2.0 V (VDR min), verified under bias conditions where VCC ≥ CS# ≥ VCC − 0.2 V and input voltages are clamped to safe levels. This specification is explicitly confirmed in the Low VCC Data Retention Characteristics table on page 12 of the official Renesas datasheet REJ03C0111-0200 Rev. 2.00.

Does R1RW0408DGE-2LR#B0 require a clock signal to operate?

No, R1RW0408DGE-2LR#B0 is a fully static RAM and requires no clock signal. Its operation is controlled solely by address inputs (A0–A18), control signals (CS#, OE#, WE#), and power (VCC/VSS). The "completely static memory" feature means all timing is asynchronous and governed only by setup/hold and access specifications-not periodic timing events.

What does the "-2LR" suffix indicate in R1RW0408DGE-2LR#B0?

The "-2LR" suffix identifies the R1RW0408DGE-2LR#B0 as the 12 ns access time variant (2) in L-version (L) configuration with SOJ packaging (R), where "L" denotes enhanced low-power characteristics including 0.8 mA max CMOS standby current and 2.0 V minimum data retention voltage. The "#B0" denotes tape-and-reel packaging per Renesas standard ordering code conventions.

Is R1RW0408DGE-2LR#B0 pin-compatible with other devices in the R1RW0408D Series?

Yes, all R1RW0408D Series variants-including R1RW0408DGE-0PR (10 ns), R1RW0408DGE-2PR (12 ns), and R1RW0408DGE-2LR#B0-share identical 36-pin SOJ pinouts, address/data/control signal assignments, and power/ground pin locations. The only functional differences are access time and standby current behavior tied to the L-version designation.

What is the maximum operating current for R1RW0408DGE-2LR#B0 during active read/write cycles?

The R1RW0408DGE-2LR#B0 has a maximum operating supply current (ICC) of 100 mA under 12 ns cycle conditions at VCC = 3.3 V ± 0.3 V and Ta = 0 to +70°C, as specified in the DC Characteristics table on page 6 of the Renesas datasheet. This value applies to both read and write operations with all I/O lines loaded.